Lamp with internal fuse system
    1.
    发明授权
    Lamp with internal fuse system 有权
    带内部保险丝系统的灯

    公开(公告)号:US08217574B2

    公开(公告)日:2012-07-10

    申请号:US12753532

    申请日:2010-04-02

    IPC分类号: H01K1/66 H01K1/62

    CPC分类号: H01K1/66

    摘要: Embodiments of a lamp having an internal fuse system are provided herein. In some embodiments, a lamp may include a transparent housing; a filament disposed in the housing, the filament having a main body disposed between a first end and a second end of the filament; a first conductor coupled to the filament at the first end of the filament; a first interceptor bar disposed in the housing and beneath the main body of the filament, wherein the first interceptor bar is coupled to the second end of the filament; a second conductor disposed proximate the first end of the filament and conductively coupled to the second end of the filament via the first interceptor bar, wherein the first interceptor bar is positioned such that an electrical short forms between the first and second conductors when the main body of the filament contacts the first interceptor bar.

    摘要翻译: 本文提供具有内部熔丝系统的灯的实施例。 在一些实施例中,灯可以包括透明外壳; 布置在所述壳体中的细丝,所述细丝具有设置在所述细丝的第一端和第二端之间的主体; 在灯丝的第一端处耦合到灯丝的第一导体; 设置在所述壳体中并在所述灯丝主体下方的第一拦截棒,其中所述第一拦截杆连接到所述灯丝的第二端; 第二导体,其设置在灯丝的第一端附近并且经由第一拦截棒与导电丝的第二端导电连接,其中第一拦截棒被定位成使得当主体 的灯丝接触第一拦截棒。

    Methods and apparatus for the deposition of materials on a substrate
    3.
    发明授权
    Methods and apparatus for the deposition of materials on a substrate 有权
    用于在基材上沉积材料的方法和装置

    公开(公告)号:US09499905B2

    公开(公告)日:2016-11-22

    申请号:US13547487

    申请日:2012-07-12

    IPC分类号: C23C16/455

    摘要: Methods and apparatus for deposition of materials on substrates are provided herein. In some embodiments, an apparatus may include a process chamber having a substrate support; a heating system to provide heat energy to the substrate support; a gas inlet port disposed to a first side of the substrate support to provide at least one of a first process gas or a second process gas across a processing surface of the substrate; a first gas distribution conduit disposed above the substrate support and having one or more first outlets disposed along the length of the first gas distribution conduit to provide a third process gas to the processing surface of the substrate, wherein the one or more first outlets are substantially linearly arranged; and an exhaust manifold disposed to a second side of the substrate support opposite the gas inlet port to exhaust the process gases from the process chamber.

    摘要翻译: 本文提供了在基板上沉积材料的方法和装置。 在一些实施例中,装置可以包括具有基板支撑件的处理室; 用于向衬底支撑件提供热能的加热系统; 气体入口,设置在所述衬底支撑件的第一侧上,以提供穿过所述衬底的处理表面的第一工艺气体或第二工艺气体中的至少一种; 第一气体分配导管,设置在所述衬底支撑件上方,并且具有沿着所述第一气体分配导管的长度设置的一个或多个第一出口,以向所述衬底的所述处理表面提供第三工艺气体,其中所述一个或多个第一出口基本上 线性排列; 以及设置在与气体入口相对的衬底支撑件的第二侧上以排出来自处理室的处理气体的排气歧管。

    Small footprint modular processing system
    4.
    发明申请
    Small footprint modular processing system 审中-公开
    小尺寸模块化处理系统

    公开(公告)号:US20080019806A1

    公开(公告)日:2008-01-24

    申请号:US11491577

    申请日:2006-07-24

    IPC分类号: H01L21/677

    CPC分类号: H01L21/67196

    摘要: A method and apparatus for a modular processing system is described. The apparatus includes a transfer chamber as the foundation for the system and includes sidewalls adapted to receive at least three 200 mm and/or 300 mm process chambers. The transfer chamber includes a robot capable of withstanding high temperatures and is configured to transfer 200 mm and 300 mm substrates. The modularity of the transfer chamber is highly transportable and provides a research and development platform at a low cost of ownership and may be modularly built into a production system as additional chambers and peripheral hardware is added.

    摘要翻译: 描述了用于模块化处理系统的方法和装置。 该装置包括作为系统的基础的传送室,并且包括适于容纳至少三个200mm和/或300mm处理室的侧壁。 传送室包括能承受高温的机器人,并被配置成传送200mm和300mm的基片。 传送室的模块化高度可移植,并以低成本提供研发平台,并且可以将模块化内置在生产系统中,因为添加了附加的室和外围硬件。

    Methods for atomic layer deposition of hafnium-containing high-K dielectric materials
    5.
    发明授权
    Methods for atomic layer deposition of hafnium-containing high-K dielectric materials 失效
    含铪高K介电材料的原子层沉积方法

    公开(公告)号:US08282992B2

    公开(公告)日:2012-10-09

    申请号:US11925681

    申请日:2007-10-26

    IPC分类号: C23C16/00

    摘要: Embodiments of the invention provide methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral, or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

    摘要翻译: 本发明的实施例提供了在诸如原子层沉积(ALD)的气相沉积工艺期间在衬底上沉积材料的方法。 在一个实施例中,腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。 腔室还包括至少一个管道,其连接到膨胀通道内的气体入口并且定位成提供在圆形方向(例如涡流,螺旋,螺旋或其衍生物)上的气体流过膨胀通道。 膨胀通道可以直接形成在室盖内,或者形成在其内附着的漏斗衬套中。 腔室可以包含保持环,上加工衬套,下工艺衬垫或滑阀衬套。 衬里通常具有抛光表面光洁度并且包含绝热材料,例如熔融石英或陶瓷。 在替代实施例中,沉积系统包含连接到ALD室的催化水蒸汽发生器。

    Apparatuses for atomic layer deposition
    7.
    发明授权
    Apparatuses for atomic layer deposition 有权
    用于原子层沉积的装置

    公开(公告)号:US08343279B2

    公开(公告)日:2013-01-01

    申请号:US11127753

    申请日:2005-05-12

    IPC分类号: C23C16/00

    摘要: Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

    摘要翻译: 本发明的实施例提供了在诸如原子层沉积(ALD)的气相沉积工艺期间在衬底上沉积材料的设备和方法。 在一个实施例中,腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。 腔室还包括至少一个管道,其连接到膨胀通道内的气体入口并且定位成提供在圆形方向(例如涡流,螺旋,螺旋或其衍生物)上的气流通过膨胀通道。 膨胀通道可以直接形成在室盖内,或者形成在其内附着的漏斗衬套中。 腔室可以包含保持环,上加工衬套,下工艺衬垫或滑阀衬套。 衬里通常具有抛光表面光洁度并且包含绝热材料,例如熔融石英或陶瓷。 在替代实施例中,沉积系统包含连接到ALD室的催化水蒸汽发生器。

    TEMPERATURE CONTROLLED MULTI-GAS DISTRIBUTION ASSEMBLY
    8.
    发明申请
    TEMPERATURE CONTROLLED MULTI-GAS DISTRIBUTION ASSEMBLY 审中-公开
    温度控制多气体分配总成

    公开(公告)号:US20080099147A1

    公开(公告)日:2008-05-01

    申请号:US11553340

    申请日:2006-10-26

    IPC分类号: C23F1/00 C23C16/00

    摘要: An apparatus and method for a gas distribution plate is provided. The gas distribution plate has a first manifold which includes a plurality of concentric channels for providing at least two distinct gases to a processing zone above a substrate. A portion of the plurality of channels perform a thermal control function and are separated from the remaining channels, which provide separated gas flow channels within the gas distribution plate. The gas flow channels are in fluid communication with a second manifold which includes a plurality of concentric rings. Apertures formed in the rings are in fluid communication with the gas flow channels and the processing zone. The gases are provided to the processing zone above the substrate, and do not mix within the gas distribution plate.

    摘要翻译: 提供了一种用于气体分配板的装置和方法。 气体分配板具有第一歧管,其包括多个同心通道,用于向衬底上方的处理区域提供至少两种不同的气体。 多个通道的一部分执行热控制功能,并且与剩余的通道分离,其在气体分配板内提供分离的气体流动通道。 气体流动通道与包括多个同心环的第二歧管流体连通。 形成在环中的孔与气体流动通道和处理区流体连通。 气体被提供到衬底上方的处理区域,并且不在气体分布板内混合。