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    Parallel contact patterning using nanochannel glass (NCG)
    3.
    发明授权
    Parallel contact patterning using nanochannel glass (NCG) 失效
    使用纳米通道玻璃（NCG）的平行接触图案化

    公开(公告)号：US06599616B1

    公开(公告)日：2003-07-29

    申请号：US09154243

    申请日：1998-09-16

    申请人： Ronald J. Tonucci ,  Douglas H. Pearson

    发明人： Ronald J. Tonucci ,  Douglas H. Pearson

    IPC分类号： B32B2714

    CPC分类号： H01L21/4846 ,  H01L21/4867 ,  Y10T428/24802 ,  Y10T428/2902 ,  Y10T428/31678

    摘要： The present invention is a method for modifying a substrate in a predetermined pattern, comprising the steps of: (a) applying a material to the face of an etched nanochannel glass (NCG), where this face has a pattern of channels corresponding to the predetermined pattern, and (b) contacting the substrate with the etched NCG face having applied material, under conditions for transferring the material to the substrate.

    摘要翻译： 本发明是一种用于以预定图案修改基板的方法，包括以下步骤：（a）将材料施加到蚀刻的纳米通道玻璃（NCG）的表面上，其中该表面具有对应于预定的 图案，和（b）在将材料转移到基底的条件下，使基底与具有涂覆材料的蚀刻NCG面接触。

    Fabrication methods and structured materials for photonic devices
    4.
    发明授权
    Fabrication methods and structured materials for photonic devices 失效
    光子器件的制作方法和结构材料

    公开(公告)号：US6064511A

    公开(公告)日：2000-05-16

    申请号：US052848

    申请日：1998-03-31

    申请人： Charles M. Fortmann ,  John H. Coleman ,  Serge Luryi ,  Ronald J. Tonucci

    发明人： Charles M. Fortmann ,  John H. Coleman ,  Serge Luryi ,  Ronald J. Tonucci

    IPC分类号： C30B25/02 ,  G02B6/122 ,  G02F1/017 ,  G02B1/12

    CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B29/60 ,  G02B6/1225

    摘要： Structured materials for photonic devices, at wavelengths of X-ray, ultraviolet, visible, infrared and microwave radiation, can be made using layer growth techniques. Such a structure can be made layer by layer, by homogeneous deposition followed by localized modification for refractive index differentiation. Alternatively, the structure can be made by simultaneous growth of regions whose refractive index differs. The structures can be used as selective bandpass filters, and in photovoltaic solar cells, for example.

    摘要翻译： 在X射线，紫外线，可见光，红外和微波辐射的波长处的光子器件的结构材料可以使用层生长技术制成。 这种结构可以逐层地进行，通过均匀沉积，然后进行折射率分化的局部修饰。 或者，可以通过折射率不同的区域的同时生长来制造该结构。 该结构可以用作选择性带通滤波器，例如在光伏太阳能电池中。

    High voltage, high temperature wire
    6.
    发明授权
    High voltage, high temperature wire 失效
    高电压，高温电线

    公开(公告)号：US07002072B2

    公开(公告)日：2006-02-21

    申请号：US10868446

    申请日：2004-06-14

    申请人： Ronald J. Tonucci ,  Gary Roan

    发明人： Ronald J. Tonucci ,  Gary Roan

    IPC分类号： H01B7/34

    CPC分类号： H01B3/105 ,  H01B13/065

    摘要： An insulated conducting wire (ICW) having an inorganic cladding and a microwire positioned within the cladding. The outer diameter of the microwire is less then the inner diameter of the cladding, and the insulated conducting wire is substantially free of bonding between the microwire and the cladding. A process of making a wire, having the steps of: drawing an inorganic tube through a heating zone such that the inner diameter of the tube is reduced; inserting a microwire into the tube whereby the tube becomes a cladding; and adjusting the draw process parameters such that the inner diameter of the cladding is larger than the outer diameter of the microwire, and the microwire and the cladding are not in contact with each other under thermal conditions that would cause bonding between the microwire and the cladding.

    摘要翻译： 一种绝缘导线（ICW），其具有无机包层和位于包层内的微线。 微丝的外径小于包层的内径，绝缘导线基本上没有微线与包层之间的结合。 一种制造线材的方法，具有以下步骤：通过加热区域拉伸无机管，使得管的内径减小; 将微丝插入管中，由此管变成包层; 并且调整拉伸工艺参数，使得包层的内径大于微丝的外径，并且在引起微丝和包层之间的结合的热条件下，微丝和包层彼此不接触 。

    Nanopost arrays and process for making same
    8.
    发明授权
    Nanopost arrays and process for making same 失效
    Nanopost阵列及其制作工艺

    公开(公告)号：US06185961B1

    公开(公告)日：2001-02-13

    申请号：US09237927

    申请日：1999-01-27

    申请人： Ronald J. Tonucci ,  Paul P. Nguyen

    发明人： Ronald J. Tonucci ,  Paul P. Nguyen

    IPC分类号： C03C1700

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  C03C17/10 ,  C03C2217/261 ,  C03C2218/11 ,  C03C2218/32 ,  H01F1/009 ,  H01F41/30 ,  H01F41/34

    摘要： A nanopost glass array contains up to 1012/cm2 of magnetizable nanoposts having diameter of 10-1000 nm that are straight and parallel to each other and are typically of a uniform diameter relative to each other and along the post length. The array is made using a reference electrode and a nanochannel glass template structure connected to each other electrically through an electrical source and both disposed in a plating solution. A magnetizable material is electroplated from the plating solution into the channels of the template structure.

    摘要翻译： 纳米玻璃阵列包含直径为10-1000nm的高达1012 / cm2的可磁化纳米柱，它们是直的并且彼此平行，并且通常具有相对于彼此和沿柱长度均匀的直径。 该阵列使用参考电极和纳米通道玻璃模板结构制成，该结构通过电源彼此电连接并且都设置在电镀液中。 将可磁化材料从电镀溶液电镀到模板结构的通道中。

    Parallel contact patterning using nanochannel glass
    9.
    发明授权
    Parallel contact patterning using nanochannel glass 失效
    使用纳米通道玻璃的平行接触图案化

    公开(公告)号：US5855716A

    公开(公告)日：1999-01-05

    申请号：US725211

    申请日：1996-09-24

    申请人： Ronald J. Tonucci ,  Douglas H. Pearson

    发明人： Ronald J. Tonucci ,  Douglas H. Pearson

    IPC分类号： H01L21/48 ,  B44C1/165 ,  B32B31/00 ,  C08J7/04 ,  C23C14/00

    CPC分类号： H01L21/4846 ,  H01L21/4867 ,  Y10T428/24802 ,  Y10T428/2902 ,  Y10T428/31678

    摘要： The present invention is a method for modifying a substrate in a predetermined pattern, comprising the steps of: (a) applying a material to the face of an etched nanochannel glass (NCG), where this face has a pattern of channels corresponding to the predetermined pattern, and (b) contacting the substrate with the etched NCG face having applied material, under conditions for transferring the material to the substrate.

    摘要翻译： 本发明是一种用于以预定图案修改基板的方法，包括以下步骤：（a）将材料施加到蚀刻的纳米通道玻璃（NCG）的表面上，其中该表面具有对应于预定的 图案，和（b）在将材料转移到基底的条件下，使基底与具有涂覆材料的蚀刻NCG面接触。

    Method of making a semiconductor device using a nanochannel glass matrix
    10.
    发明授权
    Method of making a semiconductor device using a nanochannel glass matrix 失效
    使用纳米通道玻璃基体制造半导体器件的方法

    公开(公告)号：US5306661A

    公开(公告)日：1994-04-26

    申请号：US53752

    申请日：1993-04-29

    申请人： Ronald J. Tonucci ,  Brian L. Justus

    发明人： Ronald J. Tonucci ,  Brian L. Justus

    IPC分类号： C03C14/00 ,  H01L27/00 ,  H01L29/15 ,  H01L21/20

    CPC分类号： C03C14/00 ,  B82Y10/00 ,  H01L27/00 ,  H01L29/15 ,  B01J2219/0052 ,  C03C2214/30 ,  Y10S148/05 ,  Y10S438/962

    摘要： The present invention provides a method of forming a semiconductor device mprising the steps of:forming a glass block of an acid inert glass having acid etchable glass rods extending therethrough, the acid etchable glass rods having an average diameter of less than 1 micron;partially etching one end of the acid etchable rods surface of the glass block to form cavities in the glass block on one surface thereof having an average diameter of less than 1 micron;depositing material(s) in the cavities to form a semiconductor device.The present invention also provides a method for forming a semiconductor device in which the acid etchable glass rods are completely etched and the deposition material(s) is deposited to fill the nanochannels formed by the etching.The present invention also provides semiconductor devices made by these methods.

    摘要翻译： 本发明提供一种形成半导体器件的方法，包括以下步骤：形成具有延伸穿过其中的酸蚀玻璃棒的酸性惰性玻璃的玻璃块，所述酸蚀刻玻璃棒的平均直径小于1微米; 部分蚀刻玻璃块的酸蚀刻棒表面的一端，以在玻璃块的一个表面上形成平均直径小于1微米的空腔; 在空腔中沉积材料以形成半导体器件。 本发明还提供了一种用于形成半导体器件的方法，其中可酸腐蚀的玻璃棒被完全蚀刻并且沉积材料被沉积以填充由蚀刻形成的纳米通道。 本发明还提供了通过这些方法制造的半导体器件。