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1.发明申请LIGHT-EMITTING-DIODE CHIP COMPRISING A SEQUENCE OF GAN-BASED EPITAXIAL LAYERS WHICH EMIT RADIATION AND A METHOD FOR PRODUCING THE SAME 有权发射二极管芯片，其包含发射辐射的基于GAN的外延层的序列及其生产方法公开(公告)号：US20070221936A1
公开(公告)日：2007-09-27
申请号：US11755284
申请日：2007-05-30
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L24/73 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01067 , H01L2924/12041 , H01L2924/00014 , H01L2924/00012
摘要： A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a -doped layer (5). The p-doped layer (5) is provided, on its main surface (9)facing away from the active region (19), with a reflective contact metallization (6)comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
摘要翻译： 发光二极管芯片（1）包括GaN基辐射发射外延层序列（3），有源区（19），n掺杂层（4）和掺杂层（5）。 p型掺杂层（5）在其主表面（9）上面向远离有源区（19）的反射接触金属化（6）提供，反射接触金属化（6）包括一个放射性接触层（15）和一个反射层（16） ）。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。
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2.发明申请公开(公告)号：US20060011925A1
公开(公告)日：2006-01-19
申请号：US11065769
申请日：2005-02-25
申请人： Stefan Bader , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Manfred Mundbrod-Vangerow , Dominik Eisert
发明人： Stefan Bader , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Manfred Mundbrod-Vangerow , Dominik Eisert
IPC分类号： H01L29/22
CPC分类号： H01L33/405 , H01L27/153 , H01L33/0079 , H01L33/02 , H01L33/22 , H01L33/32 , H01L33/44 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.
摘要翻译： 本发明描述了一种基于GaN的辐射发射半导体元件，其半导体主体由不同GaN半导体层（1）的堆叠构成。 半导体本体具有第一主表面（3）和第二主表面（4），所产生的辐射通过第一主表面（3）发射，反射器（6）在第二主表面（4）上产生 ）。 本发明还描述了根据本发明的半导体部件的制造方法。 首先将中间层（9）施加到基板（8），然后施加构成部件的半导体主体的多个GaN层（1）。 然后分离基板（8）和中间层（9），并且在半导体本体的主表面上产生反射器（6）。
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3.发明申请公开(公告)号：US20050282373A1
公开(公告)日：2005-12-22
申请号：US11067349
申请日：2005-02-25
申请人： Stefan Bader , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Manfred Mundbrod-Vangerow , Dominik Eisert
发明人： Stefan Bader , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer , Manfred Mundbrod-Vangerow , Dominik Eisert
CPC分类号： H01L33/405 , H01L27/153 , H01L33/0079 , H01L33/02 , H01L33/22 , H01L33/32 , H01L33/44 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.
摘要翻译： 本发明描述了一种基于GaN的辐射发射半导体元件，其半导体主体由不同GaN半导体层（1）的堆叠构成。 半导体本体具有第一主表面（3）和第二主表面（4），所产生的辐射通过第一主表面（3）发射，反射器（6）在第二主表面（4）上产生 ）。 本发明还描述了根据本发明的半导体部件的制造方法。 首先将中间层（9）施加到基板（8），然后施加构成部件的半导体主体的多个GaN层（1）。 然后分离基板（8）和中间层（9），并且在半导体本体的主表面上产生反射器（6）。
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公开(公告)号：US20070012944A1
公开(公告)日：2007-01-18
申请号：US11508504
申请日：2006-08-23
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/40 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/181 , H01L2224/48091 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence is provided on substantially the full area of its p-side with a reflective, bondable p-contact layer. The substrate is provided on its main surface facing away from the epitaxial layer sequence with a contact metallization that covers only a portion of said main surface, and the decoupling of light from the chip takes place via a bare region of the main surface of the substrate and via the chip sides. A further LED chip has epitaxial layers only. The p-type epitaxial layer is provided on substantially the full area of the main surface facing away from the n-conductive epitaxial layer with a reflective, bondable p-contact layer, and the n-conductive epitaxial layer is provided on its main surface facing away from the p-conductive epitaxial layer with an n-contact layer that covers only a portion of said main surface. The decoupling of light from the chip takes place via the bare region of the main surface of the n-conductive epitaxial layer and via the chip sides.
摘要翻译： 一种LED芯片，包括导电和无辐射基板，其中外延层序列在其p侧的基本上整个区域上设置有反射的，可粘合的p接触层。 衬底在其主表面上设置为背离外延层序列，接触金属化仅覆盖所述主表面的一部分，并且来自芯片的光的解耦通过衬底的主表面的裸露区域进行 并通过芯片侧面。 另外的LED芯片仅具有外延层。 p型外延层在主表面的大致整个区域上设置有背向n导电外延层的反射式可结合p接触层，并且n导电外延层设置在其主表面上 远离p导电外延层，其中n接触层仅覆盖所述主表面的一部分。 来自芯片的光的解耦通过n导电外延层的主表面的裸露区域和芯片侧进行。
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公开(公告)号：US20060289854A1
公开(公告)日：2006-12-28
申请号：US11463633
申请日：2006-08-10
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。
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公开(公告)号：US20050116216A1
公开(公告)日：2005-06-02
申请号：US11014677
申请日：2004-12-16
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。
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7.发明申请Method for fabricating a radiation-emitting semiconductor chip based on Ill-V nitride semiconductor 有权用于制造基于III-V族氮化物半导体的辐射发射半导体芯片的方法公开(公告)号：US20050104083A1
公开(公告)日：2005-05-19
申请号：US11017615
申请日：2004-12-20
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01S5/34333
摘要： A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III-V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.
摘要翻译： 一种制造具有基于III-V族氮化物半导体材料的薄膜元件的辐射发射半导体芯片的方法包括以下步骤：在外延衬底上沉积薄膜元件层序列。 将薄膜元件接合到载体上，并且将外延基板从薄膜元件移除。 外延衬底具有由PolySiC或PolyGaN制成的衬底主体或由SiC，GaN或蓝宝石构成的衬底主体，其通过结合层连接到生长层上，并且通过外延沉积薄膜元件的层序列 。
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公开(公告)号：US07106090B2
公开(公告)日：2006-09-12
申请号：US11014677
申请日：2004-12-16
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。
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公开(公告)号：US07556974B2
公开(公告)日：2009-07-07
申请号：US11463633
申请日：2006-08-10
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimar
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimar
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于具有第一电子的氮化物半导体材料的第一组合物的器件阱层（6a） 提供具有与第一电子能量相比更高的电子能量的氮化物半导体材料的第二组合物的能量和势垒层（6b），然后通过辐射活性量子阱层（在生长方向上） 6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。
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公开(公告)号：US07425237B2
公开(公告)日：2008-09-16
申请号：US10696882
申请日：2003-10-30
IPC分类号： C30B23/00
CPC分类号： C30B25/02 , C30B25/10 , C30B29/403 , H01L21/02378 , H01L21/0254 , H01L21/02658 , H01L21/324
摘要： The deposition of material (3) on a growth area (4) may be highly temperature-sensitive. In order to reduce temperature inhomogeneities on the growth area (4) of a substrate wafer (1), a thermal radiation absorption layer (2) is applied on a rear side (5) of the substrate wafer (1) lying opposite to the growth area (4). The thermal radiation absorption layer (2) exhibits good radiation absorption in the spectral range of a heating source. Since the deposition of semiconductor materials, in particular AllnGaN, may lead to (depending on the deposition temperature) different emission wavelengths of the deposited material, the use of a thermal radiation absorption layer (2) may produce a narrower emission wavelength distribution of the deposited material (3).
摘要翻译： 材料（3）在生长区域（4）上的沉积可能是高度温度敏感的。 为了降低衬底晶片（1）的生长区域（4）上的温度不均匀性，将热辐射吸收层（2）施加在与生长相对的衬底晶片（1）的后侧（5）上 区域（4）。 热辐射吸收层（2）在加热源的光谱范围内表现出良好的辐射吸收。 由于半导体材料（特别是AllnGaN）的沉积可能导致（取决于沉积温度）沉积材料的不同发射波长，所以使用热辐射吸收层（2）可以产生较小的沉积的发射波长分布 材料（3）。
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