公开(公告)号：US06185081B2

公开(公告)日：2001-02-06

申请号：US09345552

申请日：1999-06-30

申请人： Bogdan M. Simion ,  Yingjian Chen ,  Mark S. Miller

发明人： Bogdan M. Simion ,  Yingjian Chen ,  Mark S. Miller

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996

摘要： Bias layers for a magnetoresistive (MR) sensor have an in-plane easy axis of magnetization for providing a longitudinal bias to MR layers. The bias layers include cobalt (Co), and are formed on various underlayers having crystalline structures that encourage an in-plane alignment of the C-axis of that Co. Preferred underlayers include nickel aluminum (NiAl) and magnesium oxide (MgO), and an interlayer containing chromium (Cr) may be interposed between a bias layer and an underlayer.

摘要翻译： 用于磁阻（MR）传感器的偏置层具有面内容易的磁化轴，以向MR层提供纵向偏置。 偏置层包括钴（Co），并且形成在具有促进该Co的C轴的面内对准的结晶结构的各种底层上。优选的底层包括镍铝（NiAl）和氧化镁（MgO），以及 可以在偏置层和底层之间插入含有铬（Cr）的中间层。

公开(公告)号：US08146236B1

公开(公告)日：2012-04-03

申请号：US12057692

申请日：2008-03-28

申请人： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

发明人： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method and system for providing a perpendicular magnetic recording (PMR) transducer from pole layer(s) are disclosed. First and second planarization stop layers are provided on the pole layer(s). A mask is provided on the second planarization stop layer. A first portion of the mask resides on a portion of the pole layer(s) used to form the PMR pole. The PMR pole is defined after the mask is provided. An intermediate layer surrounding at least the PMR pole is provided. A first planarization is performed on at least the intermediate layer. A portion of the second planarization stop layer is removed during the first planarization. A remaining portion of the second planarization stop layer is removed. A second planarization is performed. A portion of the first planarization stop layer remains after the second planarization. A write gap and shield are provided on the PMR pole and write gap, respectively.

摘要翻译： 公开了一种用于从极层提供垂直磁记录（PMR）换能器的方法和系统。 第一和第二平坦化停止层设置在极层上。 在第二平坦化停止层上设置掩模。 掩模的第一部分位于用于形成PMR极的极层的一部分上。 在提供面罩之后定义PMR极。 提供至少围绕PMR极的中间层。 至少在中间层上执行第一平面化。 在第一平坦化期间，去除第二平坦化停止层的一部分。 去除第二平坦化停止层的剩余部分。 执行第二平面化。 在第二平面化之后，第一平坦化停止层的一部分保留。 分别在PMR极和写间隙上提供写间隙和屏蔽。

公开(公告)号：US20110151279A1

公开(公告)日：2011-06-23

申请号：US12641251

申请日：2009-12-17

申请人： Donald G. Allen ,  Amanda Baer ,  Yingjian Chen ,  Andrew Chiu ,  Liubo Hong ,  Wen-Chien D. Hsiao ,  Edward H.P. Lee ,  Fenglin Liu ,  Aron Pentek ,  Katalin Pentek ,  Kyusik Shin ,  Yi Zheng ,  Qiping Zhong ,  Honglin Zhu

发明人： Donald G. Allen ,  Amanda Baer ,  Yingjian Chen ,  Andrew Chiu ,  Liubo Hong ,  Wen-Chien D. Hsiao ,  Edward H.P. Lee ,  Fenglin Liu ,  Aron Pentek ,  Katalin Pentek ,  Kyusik Shin ,  Yi Zheng ,  Qiping Zhong ,  Honglin Zhu

IPC分类号： G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/314 ,  G11B5/3143 ,  G11B5/3146 ,  G11B5/315 ,  Y10T428/11 ,  Y10T428/1171

摘要： A magnetic write head having a tapered trailing edge and having a magnetic layer formed over a trailing edge of the write pole at a location recessed from the ABS, the magnetic layer being separated from the trailing edge of the write pole by a thin non-magnetic layer. The thin non-magnetic layer is preferably sufficiently thin that the magnetic layer can function as a portion of the write pole in a region removed from the ABS. A trailing magnetic shield is formed over the write pole and is separated from the write pole by a non-magnetic trailing gap layer. A non-magnetic spacer layer can be formed over the magnetic layer to provide additional separation between the magnetic layer and the trailing magnetic shield.

摘要翻译： 一种具有锥形后缘并具有磁性层的磁性写头，该磁性层形成在从ABS的凹陷处的写入极的后缘上，该磁性层通过薄的非磁性的方式与写入极的后缘分离 层。 薄的非磁性层优选地足够薄，使得磁性层可以在从ABS去除的区域中用作写入极的一部分。 尾磁屏蔽形成在写极上，并且通过非磁性拖尾间隙层与写极分离。 可以在磁性层之上形成非磁性间隔层，以在磁性层和尾部磁屏蔽之间提供额外的间隔。

公开(公告)号：US20110134567A1

公开(公告)日：2011-06-09

申请号：US12634456

申请日：2009-12-09

申请人： Yingjian Chen ,  Liubo Hong ,  Yimin Hsu ,  Edward Hin Pong Lee ,  Katalin Pentek

发明人： Yingjian Chen ,  Liubo Hong ,  Yimin Hsu ,  Edward Hin Pong Lee ,  Katalin Pentek

IPC分类号： G11B5/10

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315

摘要： A magnetic write head having a write pole with a tapered trailing edge. The write head has a non-magnetic step layer and a non-magnetic bump formed on the front edge of the magnetic step layer. A non-magnetic trailing gap layer is formed over the tapered trailing edge of the write pole and over the non-magnetic bump and over the non-magnetic step layer. A magnetic trailing shield is formed over at least a portion of the non-magnetic gap layer.

摘要翻译： 一种具有具有锥形后缘的写极的磁写头。 写头具有形成在磁性阶梯层的前边缘上的非磁性阶梯层和非磁性凸块。 非磁性拖尾间隙层形成在写磁极的锥形后缘和非磁性凸块之上以及非磁性阶梯层之上。 在非磁隙层的至少一部分上形成有磁性后屏蔽。

公开(公告)号：US07419891B1

公开(公告)日：2008-09-02

申请号：US11352652

申请日：2006-02-13

申请人： Benjamin Chen ,  Hongping Yuan ,  Danning Yang ,  Wei Zhang ,  Hugh C. Hiner ,  Lei Wang ,  Yingjian Chen ,  Brant Nease

发明人： Benjamin Chen ,  Hongping Yuan ,  Danning Yang ,  Wei Zhang ,  Hugh C. Hiner ,  Lei Wang ,  Yingjian Chen ,  Brant Nease

IPC分类号： H01L21/20

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909

摘要： The method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic element stack that includes a plurality of layers and depositing a stop layer on the magnetic element stack. The method and system also include providing a dielectric antireflective coating (DARC) layer on the stop layer, forming a single layer mask for defining the magnetic element on a portion of the DARC layer, and removing a remaining portion of the DARC layer not covered by the single layer mask. The portion of the DARC layer covers a portion of the stop layer. The method further includes removing a remaining portion of the stop layer and defining the magnetic element using at least the portion of stop layer as a mask.

摘要翻译： 公开了用于提供磁性元件的方法和系统。 该方法和系统包括提供包括多个层的磁性元件堆叠并在磁性元件堆叠上沉积停止层。 该方法和系统还包括在停止层上提供介电抗反射涂层（DARC）层，形成用于在DARC层的一部分上限定磁性元件的单层掩模，以及去除DARC层未覆盖的DARC层的剩余部分 单层面膜。 DARC层的一部分覆盖停止层的一部分。 该方法还包括使用停止层的至少一部分作为掩模去除停止层的剩余部分并限定磁性元件。

公开(公告)号：US07342752B1

公开(公告)日：2008-03-11

申请号：US10769239

申请日：2004-01-31

申请人： Wei Zhang ,  Yingjian Chen ,  Satoru Araki ,  Mohamad T Krounbi

发明人： Wei Zhang ,  Yingjian Chen ,  Satoru Araki ,  Mohamad T Krounbi

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive read head includes a magnetoresistive sensor and a bias structure adjacent to the magnetoresistive sensor. The bias structure provides a magnetostatic bias field for the magnetoresistive sensor. The bias structure includes an underlayer, a bias layer over the underlayer, and at least one dusting layer directly below at least one of the underlayer or the bias layer.

摘要翻译： 磁阻读取头包括磁阻传感器和与磁阻传感器相邻的偏置结构。 偏置结构为磁阻传感器提供静磁偏置场。 偏置结构包括底层，底层上的偏置层，以及直接位于底层或偏置层中的至少一个的至少一个除尘层。

公开(公告)号：US07289303B1

公开(公告)日：2007-10-30

申请号：US09828635

申请日：2001-04-05

申请人： Kyusik Sin ,  Ningjia Zhu ,  Yingjian Chen

发明人： Kyusik Sin ,  Ningjia Zhu ,  Yingjian Chen

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/3272 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

摘要： Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed magnetic moment adjoining the exchange coupling layer. The exchange coupling layer and ferromagnetic layer form a synthetic antiferromagnetic structure with part of the free layer, providing bias that reduces magnetic instabilities at edges of the free layer. Such synthetic antiferromagnetic structures can provide a stronger bias than conventional antiferromagnetic layers, as well as a more exactly defined track width than conventional hard magnetic bias layers. The synthetic antiferromagnetic structures can also provide protection for the free layer during processing, in contrast with the trimming of conventional antiferromagnetic layers that exposes if not removes part of the free layer.

摘要翻译： 公开了具有减小诸如巴克豪森噪声等边缘效应的机构的磁阻（MR）传感器。 传感器包括钉扎层和具有邻接自由层的交换耦合层的自由层，以及具有与交换耦合层邻接的固定磁矩的铁磁层。 交换耦合层和铁磁层形成具有部分自由层的合成反铁磁结构，提供降低自由层边缘的磁性不稳定性的偏压。 这种合成反铁磁结构可以提供比常规反铁磁层更强的偏压，以及比常规硬磁偏置层更精确地定义的轨道宽度。 合成反铁磁性结构也可以在加工过程中为自由层提供保护，与如果不除去部分自由层的常规反铁磁层的修整相反。

公开(公告)号：US07286329B1

公开(公告)日：2007-10-23

申请号：US10788656

申请日：2004-02-27

申请人： Yingjian Chen ,  Wei Zhang ,  Mohamad T. Krounbi ,  Satoru Araki ,  Jinqiu Zhang

发明人： Yingjian Chen ,  Wei Zhang ,  Mohamad T. Krounbi ,  Satoru Araki ,  Jinqiu Zhang

IPC分类号： G11B5/39

CPC分类号： G01R31/318357 ,  G11B5/3932

摘要： A magnetic sensor is disclosed having a shallow contiguous junction. Such a sensor is can greatly increase yield for mass-produced heads, especially for large wafers. The magnetic bias layers can be aligned with a free layer of the sensor, improving performance. Milling may be terminated prior to penetration of an antiferromagnetic layer, so that for example the antiferromagnetic layer may extend significantly beyond the free and pinned layers of the sensor.

摘要翻译： 公开了一种具有浅连续结的磁传感器。 这种传感器可以大大提高批量生产头部的产量，特别是对于大型晶片。 磁偏置层可以与传感器的自由层对准，从而提高性能。 铣削可以在穿透反铁磁层之前终止，使得例如反铁磁层可以显着地延伸超过传感器的自由和固定层。

公开(公告)号：US07007372B1

公开(公告)日：2006-03-07

申请号：US10656311

申请日：2003-09-05

申请人： Yingjian Chen ,  Hua-Ching Tong ,  Lei Wang ,  Xizeng Shi

发明人： Yingjian Chen ,  Hua-Ching Tong ,  Lei Wang ,  Xizeng Shi

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3146 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3153 ,  G11B5/3967 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49071 ,  Y10T29/49073

摘要： An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsat material (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.

摘要翻译： 公开了用于磁数据记录系统的感应写入元件。 写元件通过改善通过元件的磁通量提供增加的数据速率和数据密度能力。 写元件包括由第一和第二磁极构成的磁轭。 第一极包括由高磁矩（高B sat sat）材料构成的基座，其优选为具有CoZrCr层压层的FeRhN纳米晶体膜。 第二极包括一高层高层材料的薄层（也优选具有CoZrCr叠层的FeRhN纳米晶膜），其余部分由能够电镀的磁性材料构成，例如Ni -Fe合金。 导电线圈通过第一和第二极之间的磁轭，当电流流过线圈时，引起磁轭中的磁通量。 轭中的磁通在写入间隙产生边缘场，由此可以将信号传递到通过的磁介质上。

公开(公告)号：US06873494B2

公开(公告)日：2005-03-29

申请号：US10134799

申请日：2002-04-29

申请人： Yingjian Chen ,  Xiaozhong Dang

发明人： Yingjian Chen ,  Xiaozhong Dang

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/40

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3133 ,  G11B5/3153 ,  G11B5/3163 ,  G11B5/40 ,  G11B2005/3996

摘要： An inductive write head structure incorporating a high moment film in conjunction with at least one pole (e.g., the bottom pole) for use with magnetic storage media and a process for producing the same in which a lift-off photoresist mask is used prior to the deposition of the high moment sputtered film. Following the lift-off process, the high moment film remains on the bottom pole (“P1”) pedestal (in the case of a PDZT type write head) or on the P1 itself (in the case of a Stitched Pole write head). The edge of the lift-off sputtered film is then covered by cured photoresist insulation which is placed at a distance away from the air bearing surface (“ABS”). The coverage of insulation at the edge of the sputtered film is desirable in order to avoid forming a topographic step which may have undesired consequences in the subsequent top pole formation processes.

摘要翻译： 结合至少一个极（例如，底极）与磁存储介质一起使用的高力矩膜的感应写头结构及其制造方法，其中在剥离光刻胶掩模之前使用剥离光致抗蚀剂掩模 沉积高速溅射膜。 在剥离过程之后，高力矩胶片保留在底极（“P1”）底座上（在PDZT型写入头的情况下）或P1本身（在缝合杆写入头的情况下）。 然后，剥离溅射膜的边缘被固定的光致抗蚀剂绝缘体覆盖，该固化的光致抗蚀剂绝缘体被放置在远离空气支承表面（“ABS”）的一定距离处。 在溅射膜的边缘处的绝缘层的覆盖是期望的，以避免形成在随后的顶极形成过程中可能具有不期望的后果的地形步骤。