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22 条记录 (耗时 0.027 秒)

    Apparatus for depositing a thin film on a substrate
    1.
    发明申请
    Apparatus for depositing a thin film on a substrate 审中-公开
    用于在基板上沉积薄膜的装置

    公开(公告)号：US20060016396A1

    公开(公告)日：2006-01-26

    申请号：US11179136

    申请日：2005-07-12

    申请人： Bong-Jin Kuh ,  Horii Hideki ,  Soon-Oh Park ,  Jang-Eun Lee ,  Yong-Ho Ha

    发明人： Bong-Jin Kuh ,  Horii Hideki ,  Soon-Oh Park ,  Jang-Eun Lee ,  Yong-Ho Ha

    IPC分类号： C23C16/00

    CPC分类号： C23C14/165 ,  C23C14/046 ,  C23C14/35 ,  C23C14/50

    摘要： An apparatus for depositing a thin film on a substrate includes a housing, a substrate support portion, a securing member, a heater, a target member and a plasma generator. The housing defines a process chamber. The substrate support portion is disposed in the process chamber to support the substrate. The securing member is adapted to non-electrically secure the substrate to the substrate support portion during performance of a process. The heater is provided to maintain the substrate supported by the substrate support portion at a process temperature. The target member faces the substrate support portion and includes materials to be deposited on the substrate. The plasma generator is adapted to excite a process gas supplied into the process chamber into a plasma state.

    摘要翻译： 用于在衬底上沉积薄膜的装置包括壳体，衬底支撑部分，固定构件，加热器，目标构件和等离子体发生器。 壳体限定了处理室。 衬底支撑部分设置在处理室中以支撑衬底。 固定构件适于在执行过程期间将基板非电气地固定到基板支撑部分。 提供加热器以将基板支撑部分支撑的基板保持在处理温度。 目标构件面向衬底支撑部分并且包括待沉积在衬底上的材料。 等离子体发生器适于将供应到处理室中的工艺气体激发成等离子体状态。

    Phase-change memory devices with a self-heater structure
    8.
    发明授权
    Phase-change memory devices with a self-heater structure 有权
    具有自加热器结构的相变存储器件

    公开(公告)号：US06894305B2

    公开(公告)日：2005-05-17

    申请号：US10780073

    申请日：2004-02-17

    申请人： Ji-hye Yi ,  Horii Hideki ,  Yong-ho Ha

    发明人： Ji-hye Yi ,  Horii Hideki ,  Yong-ho Ha

    IPC分类号： H01L27/10 ,  H01L45/00 ,  H01L47/00

    CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1226 ,  H01L45/126 ,  H01L45/144

    摘要： Phase change memory devices include a phase-change memory layer on a semiconductor substrate. The phase-change memory layer has a major axis that is substantially parallel to a major axis of the semiconductor substrate and has a first surface and a second surface opposite the first surface that are substantially parallel to the major axis of the phase-change memory layer. A first electrode is provided on the semiconductor substrate that is electrically connected to the first surface of the phase-change memory layer in a first contact region of the phase-change memory layer. A second electrode is provided on the semiconductor substrate that is electrically connected to the phase-change memory layer in a second contact region of the phase-change memory layer. The second contact region is space apart from the first contact region.

    摘要翻译： 相变存储器件包括半导体衬底上的相变存储层。 相变存储层具有基本上平行于半导体衬底的长轴的长轴，并且具有与第一表面相对的第一表面和与基本上平行于相变存储层的长轴的第二表面 。 第一电极设置在半导体衬底上，在相变存储层的第一接触区域中电连接到相变存储层的第一表面。 第二电极设置在半导体基板上，在相变存储层的第二接触区域中电连接到相变存储层。 第二接触区域是与第一接触区域分开的空间。

    Methods of forming phase change storage cells for memory devices
    9.
    发明授权
    Methods of forming phase change storage cells for memory devices 有权
    形成存储器件的相变存储单元的方法

    公开(公告)号：US07387938B2

    公开(公告)日：2008-06-17

    申请号：US11401031

    申请日：2006-04-10

    申请人： Horii Hideki

    发明人： Horii Hideki

    IPC分类号： H01L21/20

    CPC分类号： H01L45/06 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1675

    摘要： Storage cells for a phase change memory device and phase change memory devices are provided that include a first phase change material pattern and a first high-resist phase change material pattern on the first phase change material pattern. The first high-resist phase change material pattern has a higher resistance than the first phase change material pattern. Methods of fabricating such storage cells and/or memory devices are also provided.

    摘要翻译： 提供了用于相变存储器件和相变存储器件的存储单元，其包括第一相变材料图案上的第一相变材料图案和第一高抗蚀剂相变材料图案。 第一高抗蚀剂相变材料图案具有比第一相变材料图案更高的电阻。 还提供了制造这种存储单元和/或存储器件的方法。

    Phase changeable memory devices having reduced cell areas
    10.
    发明授权
    Phase changeable memory devices having reduced cell areas 有权
    具有减小的单元面积的相变存储器件

    公开(公告)号：US06849892B2

    公开(公告)日：2005-02-01

    申请号：US10617958

    申请日：2003-07-11

    申请人： Horii Hideki

    发明人： Horii Hideki

    IPC分类号： H01L27/10 ,  G11C16/02 ,  H01L27/115 ,  H01L27/24 ,  H01L29/76

    CPC分类号： G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

    摘要： Phase changeable memory devices include an integrated circuit substrate and first and second storage active regions on the integrated circuit substrate. The first and second storage active regions have a first width and a second width, respectively. A transistor active region on the integrated circuit substrate is between the first and second active regions, the first and seconds widths being less than a width of the transistor active region.

    摘要翻译： 相变存储器件包括集成电路衬底和集成电路衬底上的第一和第二存储有源区。 第一和第二存储有源区域分别具有第一宽度和第二宽度。 集成电路衬底上的晶体管有源区在第一和第二有源区之间，第一和第二宽度小于晶体管有源区的宽度。