公开(公告)号：US20130330871A1

公开(公告)日：2013-12-12

申请号：US13494687

申请日：2012-06-12

申请人： Bonna Newman ,  Venkatesan Murali ,  Zhiyong Li ,  Liang Chen

发明人： Bonna Newman ,  Venkatesan Murali ,  Zhiyong Li ,  Liang Chen

IPC分类号： H01L31/18

CPC分类号： H01L31/02363 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/0747 ,  H01L31/1892 ,  Y02E10/50

摘要： A method for modifying the texture of a semiconductor material is provided. The method includes performing a first texture step comprising reactive ion etching to a first surface of semiconductor material. After the first texture step, the first surface of the semiconductor material has a random texture comprising a plurality of peaks and a plurality of valleys, and wherein at least fifty percent of the first surface has a peak-to-valley height of less than one micron and an average peak-to-peak distance of less than one micron. Additional texture steps comprising wet etch or RIE etching may be optionally applied.

摘要翻译： 提供了一种修改半导体材料纹理的方法。 该方法包括执行包括对半导体材料的第一表面的反应离子蚀刻的第一纹理步骤。 在第一纹理步骤之后，半导体材料的第一表面具有包括多个峰和多个谷的随机纹理，并且其中至少百分之五十的第一表面具有小于一个的峰谷高度 平均峰 - 峰距离小于1微米。 可以任选地应用包括湿蚀刻或RIE蚀刻的附加纹理步骤。

公开(公告)号：US08518724B2

公开(公告)日：2013-08-27

申请号：US13450414

申请日：2012-04-18

申请人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

发明人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

IPC分类号： H01L21/00 ,  H01L31/00

CPC分类号： H01L31/1892 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/50

摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved.Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与预先形成的支撑元件形成对比，该预制形成的支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，该晶片随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。

公开(公告)号：US20120220068A1

公开(公告)日：2012-08-30

申请号：US13450414

申请日：2012-04-18

申请人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

发明人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

IPC分类号： H01L31/0376 ,  H01L31/18

CPC分类号： H01L31/1892 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/50

摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved.Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与预先形成的支撑元件形成对比，该预制形成的支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，该晶片随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。

公开(公告)号：US08173452B1

公开(公告)日：2012-05-08

申请号：US12980424

申请日：2010-12-29

申请人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

发明人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

IPC分类号： H01L21/00

CPC分类号： H01L31/1892 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/50

摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal. A device may be formed which comprises the lamina, such as a photovoltaic cell.

摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与刚性或半刚性的预成形支撑元件形成对比，该刚性或半刚性的预成型支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，其中层板随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上; 这种粘合剂可能不能容忍完成装置所需的加工温度和条件。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。 可以形成包括层的器件，例如光伏电池。

公开(公告)号：US08101451B1

公开(公告)日：2012-01-24

申请号：US12980427

申请日：2010-12-29

申请人： Venkatesan Murali ,  Christopher J Petti ,  Theodore Smick ,  Mohamed M Hilali ,  Kathy J Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

发明人： Venkatesan Murali ,  Christopher J Petti ,  Theodore Smick ,  Mohamed M Hilali ,  Kathy J Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

IPC分类号： H01L21/00 ,  H01L31/00

CPC分类号： H01L21/187 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/1824 ,  H01L31/1892 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548

摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal. A device may be formed which comprises the lamina, such as a photovoltaic cell.

摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与刚性或半刚性的预成形支撑元件形成对比，该刚性或半刚性的预成型支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，其中层板随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上; 这种粘合剂可能不能容忍完成装置所需的加工温度和条件。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。 可以形成包括层的器件，例如光伏电池。

公开(公告)号：US08257995B2

公开(公告)日：2012-09-04

申请号：US12636704

申请日：2009-12-11

申请人： Mohamed M Hilali ,  Venkatesan Murali ,  Gopal Prabhu ,  Zhiyong Li

发明人： Mohamed M Hilali ,  Venkatesan Murali ,  Gopal Prabhu ,  Zhiyong Li

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC分类号： H01L21/324 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/1864 ,  H01L31/1872 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A cleave plane is defined in a semiconductor donor body by implanting ions into the wafer. A lamina is cleaved from the donor body, and a photovoltaic cell is formed which comprises the lamina. The implant may cause some damage to the crystal structure of the lamina. This damage can be repaired by annealing the lamina using microwave energy. If the lamina is bonded to a receiver element, the receiver element may be either transparent to microwaves, or may reflect microwaves, while the semiconductor material absorbs the microwaves. In this way the lamina can be annealed at high temperature while the receiver element remains cooler.

摘要翻译： 通过将离子注入到晶片中来限定半导体施主体中的解理平面。 从供体体上切下薄片，形成包含薄片的光伏电池。 植入物可能会对晶片的晶体结构造成一定的损害。 这种损伤可以通过使用微波能量退火层来修复。 如果薄片结合到接收器元件，接收器元件可以对微波是透明的，或者可以反射微波，同时半导体材料吸收微波。 以这种方式，层板可以在高温下退火，同时接收器元件保持冷却。

公开(公告)号：US08886481B1

公开(公告)日：2014-11-11

申请号：US12835184

申请日：2010-07-13

申请人： Arifur Rahman ,  Michael J. Hart ,  Venkatesan Murali

发明人： Arifur Rahman ,  Michael J. Hart ,  Venkatesan Murali

IPC分类号： G06F19/00

CPC分类号： H01L22/20 ,  H01L22/14 ,  H01L2224/16225 ,  H01L2924/15311

摘要： A method of reducing variation in multi-die integrated circuits can include, for each of a plurality of dies, determining at least one performance metric and selecting at least two dies for inclusion within a multi-die integrated circuit according to the at least one performance metric. Systems and devices for executing the steps of the method are also described.

摘要翻译： 减少多管芯集成电路中的变化的方法可以包括对于多个管芯中的每一个，确定至少一个性能度量并且根据至少一个性能选择至少两个管芯以包括在多管芯集成电路内 度量。 还描述了用于执行该方法的步骤的系统和设备。

公开(公告)号：US20140030836A1

公开(公告)日：2014-01-30

申请号：US13558843

申请日：2012-07-26

申请人： Venkatesan Murali ,  Steve Babayan ,  Christopher J. Petti

发明人： Venkatesan Murali ,  Steve Babayan ,  Christopher J. Petti

IPC分类号： H01L33/02 ,  H01L21/762

CPC分类号： H01L33/0079 ,  H01L21/76254 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L33/007

摘要： A method of fabricating an electronic device includes providing a silicon carbide or diamond-like carbon donor body and implanting ions into a first surface of the donor body to define a cleave plane. After implanting, an epitaxial layer is formed on the first surface, and a temporary carrier is coupled to the epitaxial layer. A lamina is cleaved from the donor body at the cleave plane, and the temporary carrier is removed from the lamina. In some embodiments a light emitting diode or a high electron mobility transistor is fabricated from the lamina and epitaxial layer.

摘要翻译： 一种制造电子器件的方法包括提供碳化硅或类金刚石碳供体，并将离子注入施主体的第一表面以限定解理面。 在注入之后，在第一表面上形成外延层，并且临时载体耦合到外延层。 在切割平面处从供体体中切割薄层，并将临时载体从薄片上移除。 在一些实施例中，从层板和外延层制造发光二极管或高电子迁移率晶体管。

公开(公告)号：US06331446B1

公开(公告)日：2001-12-18

申请号：US09261648

申请日：1999-03-03

申请人： Duane Cook ,  Venkatesan Murali ,  Suresh Ramalingam ,  Nagesh Vodrahalli

发明人： Duane Cook ,  Venkatesan Murali ,  Suresh Ramalingam ,  Nagesh Vodrahalli

IPC分类号： H01L2144

CPC分类号： H01L24/31 ,  H01L21/563 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83951 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/0401

摘要： A partial gel step in the underfilling of an integrated circuit that is mounted to a substrate. The process involves dispensing a first underfill material and then heating the underfill material to a partial gel state. The partial gel step may reduce void formation and improve adhesion performance during moisture loading.

摘要翻译： 在安装到基板上的集成电路的底部填充中的部分凝胶步骤。 该方法包括分配第一底部填充材料，然后将底部填充材料加热至部分凝胶状态。 部分凝胶步骤可以减少空隙形成并改善湿气加载期间的粘附性能。

公开(公告)号：US06219910B1

公开(公告)日：2001-04-24

申请号：US09263118

申请日：1999-03-05

申请人： Venkatesan Murali

发明人： Venkatesan Murali

IPC分类号： H05K334

CPC分类号： H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  Y10T29/49144 ,  Y10T29/53178 ,  H01L2224/05599

摘要： A method for cutting an integrated circuit die from a wafer. The method may include the step of forming a solder bump on an integrated circuit wafer. The solder bump is then oxidized. The oxidization process may form an outer oxidized layer on the solder bump. An integrated circuit die is cut from the wafer after the oxidization step. The cutting process may include spraying a fluid onto the wafer. The oxidized solder may form a protective layer which reduces the amount of particles and lead hydroxide formed during the cutting process. The integrated circuit die may be mounted to a package substrate by reflowing the solder bump onto a pad of the substrate. The outer oxidized layer may be removed with a flux that is used to reflow the solder bump onto the substrate.

摘要翻译： 一种用于从晶片切割集成电路管芯的方法。 该方法可以包括在集成电路晶片上形成焊料凸块的步骤。 焊料凸点然后被氧化。 氧化过程可以在焊料凸块上形成外部氧化层。 在氧化步骤之后从晶片切割集成电路管芯。 切割过程可以包括将流体喷涂到晶片上。 氧化的焊料可以形成保护层，其减少在切割过程中形成的颗粒和氢氧化铅的量。 集成电路管芯可以通过将焊料凸块回流到衬底的焊盘上而被安装到封装衬底。 外部氧化层可以用用于将焊料凸块回流到衬底上的焊剂去除。