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1.发明授权Use of variable impedance having rotating core to control coil sputter distribution 失效使用具有旋转芯的可变阻抗来控制线圈溅射分布公开(公告)号：US06254738B1
公开(公告)日：2001-07-03
申请号：US09052868
申请日：1998-03-31
IPC分类号： C23C1434
CPC分类号： H01J37/321 , H01F29/10 , H01J37/32183 , H01J37/34 , H03H7/38
摘要： Variable reactances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied by rotating inductor cores during the deposition process so that the RF coil and substrate heating, and the film deposition, are more uniform due to “time-averaging” of the RF voltage distributions along the RF coil.
摘要翻译： 用于在衬底上沉积溅射靶材料的等离子体沉积系统中用于RF线圈的阻抗匹配盒中的可变电抗可以通过在沉积工艺期间旋转电感器芯来改变，使得RF线圈和衬底加热， 并且膜沉积由于沿RF线圈的RF电压分布的“时间平均”而更均匀。
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公开(公告)号：US06824658B2
公开(公告)日：2004-11-30
申请号：US10211472
申请日：2002-08-01
IPC分类号： C23C1434
CPC分类号： H01J37/321 , C23C14/0057 , C23C14/358 , H01J37/3405
摘要： A partial turn coil disposed in a semiconductor fabrication chamber for generating a plasma and sputter depositing coil material onto a substrate can exhibit reduced RF voltages.
摘要翻译： 设置在半导体制造室中用于产生等离子体并且将线圈材料溅射沉积到衬底上的偏转线圈可以表现出降低的RF电压。
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公开(公告)号：US06673724B2
公开(公告)日：2004-01-06
申请号：US10037018
申请日：2001-11-07
IPC分类号： H01L2131
CPC分类号： C23C14/345 , C23C14/046 , H01J37/32082 , H01J37/32431 , H01J37/3405 , H01L21/2855 , H01L21/76877
摘要： The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. In one embodiment, one or both of the signals to the substrate and the target are modulated. Preferably, the modulated signal to the substrate includes a negative voltage portion and a zero voltage portion.
摘要翻译： 本发明提供一种使用溅射电离材料在基板上实现一种或多种材料的适形步骤覆盖的方法和装置。 目标物提供由等离子体溅射的材料源，然后由感应线圈电离，从而产生电子和离子。 在一个实施例中，对衬底和靶的信号中的一个或两个进行调制。 优选地，到衬底的调制信号包括负电压部分和零电压部分。
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4.发明授权公开(公告)号：US06461483B1
公开(公告)日：2002-10-08
申请号：US09523333
申请日：2000-03-10
IPC分类号： C23C1432
CPC分类号： H01J37/321 , C23C14/046 , C23C14/358 , H01J37/32706 , H01J37/32733 , H01J37/34 , H01J37/3405
摘要： A method and apparatus that operates at a high pressure of at least one torr for improving sidewall coverage within trenches and vias in a substrate. The apparatus comprises a chamber enclosing a target and a pedestal, a process gas that provides a process gas in the chamber, a pump for maintaining the high pressure of at least about one torr in the chamber and a power source coupled to the target. Additionally, the distance between the target and the substrate is set to ensure that collisions between the sputtered particles and the plasma occur in the trenches and vias on the substrate. The method comprises the steps of providing a process gas into the chamber such that the gas pressure is at least about one torr, generating a plasma from the process gas, and sputtering material from the target.
摘要翻译： 一种在至少一个托的高压下操作以改善衬底中的沟槽和通孔内的侧壁覆盖的方法和装置。 该装置包括一个包围一个目标和一个基座的腔室，一个在腔室中提供一个处理气体的处理气体，一个保持室内至少约一托的高压的泵和一个耦合到目标的电源。 此外，靶和衬底之间的距离设定为确保溅射的粒子和等离子体之间的碰撞发生在衬底上的沟槽和通孔中。 该方法包括以下步骤：将工艺气体提供到室中，使得气体压力为至少约一乇，从工艺气体产生等离子体，以及从靶材溅射材料。
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公开(公告)号：US06235169B1
公开(公告)日：2001-05-22
申请号：US08908342
申请日：1997-08-07
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/35 , C23C14/358 , H01J37/321 , H01J37/32174 , H01J37/34
摘要： In a plasma generating apparatus, RF energy applied to a coil positioned to sputter material onto a workpiece, is modulated to control the biasing of the coil. As a consequence, control of coil sputtering may be improved such that the uniformity of deposition may also be improved.
摘要翻译： 在等离子体发生装置中，被施加到定位成将材料溅射到工件上的线圈的RF能量被调制以控制线圈的偏置。 因此，可以提高线圈溅射的控制，从而也可以提高沉积的均匀性。
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6.发明授权Process kit for improved power coupling through a workpiece in a semiconductor wafer processing system 有权用于通过半导体晶片处理系统中的工件改善功率耦合的工艺套件公开(公告)号：US07163607B2
公开(公告)日：2007-01-16
申请号：US10804254
申请日：2004-03-19
申请人： Bradley O. Stimson , Mitsuhiro Kaburaki , John C. Forster , Eric Delaurentis , Praburam Gopalraja , Patricia Rodriguez , Anantha Subramani
发明人： Bradley O. Stimson , Mitsuhiro Kaburaki , John C. Forster , Eric Delaurentis , Praburam Gopalraja , Patricia Rodriguez , Anantha Subramani
CPC分类号： H01J37/32431
摘要： Apparatus for supporting a substrate such as a semiconductor wafer in a process chamber to improve power coupling through the substrate. The apparatus contains a pedestal assembly and a pedestal cover positioned over the top surface of and circumscribing the pedestal assembly for electrically isolating the pedestal assembly. The pedestal cover reduces conductive film growth in the wafer process region. As such, RF wafer biasing power from the pedestal assembly remains coupled through the substrate during processing.
摘要翻译： 用于在处理室中支撑诸如半导体晶片的衬底以改善通过衬底的功率耦合的装置。 该装置包括一个基座组件和一个位于盖子顶部表面上并围绕基座组件的基座盖，用于电绝缘基座组件。 基座盖减少晶片工艺区域中的导电膜生长。 因此，来自基座组件的RF晶片偏置功率在处理期间保持通过衬底耦合。
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7.发明授权Apparatus for providing RF return current path control in a semiconductor wafer processing system 有权用于在半导体晶片处理系统中提供RF返回电流路径控制的装置公开(公告)号：US06221221B1
公开(公告)日：2001-04-24
申请号：US09192872
申请日：1998-11-16
IPC分类号： C23C1434
CPC分类号： H01J37/32577
摘要： Apparatus providing a low impedance RF return current path between a shield member and a pedestal in a semiconductor wafer processing chamber. The return path reduces RF voltage drop between the shield member and the pedestal during processing. The return path comprises a conductive strap connected to the pedestal and a conductive bar attached to the strap. A toroidal spring makes multiple parallel electrical connections between the conductive bar and the shield member. A support assembly, attached to a collar on the chamber wall, supports the conductive bar.
摘要翻译： 一种在半导体晶片处理室中提供屏蔽构件和基座之间的低阻抗RF返回电流路径的装置。 返回路径在处理期间降低了屏蔽构件和基座之间的RF电压降。 返回路径包括连接到基座的导电带和附接到带的导电条。 环形弹簧在导电棒和屏蔽构件之间形成多个平行的电连接。 附接到室壁上的套环的支撑组件支撑导电棒。
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8.发明授权Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system 有权用于通过半导体晶片处理系统中的工件改善功率耦合的装置公开(公告)号：US06723214B2
公开(公告)日：2004-04-20
申请号：US10039907
申请日：2002-01-02
申请人： Bradley O. Stimson , Mitsuhiro Kaburaki , John C. Forster , Eric Delaurentis , Praburam Gopalraja , Patricia Rodriguez , Anantha Subramani
发明人： Bradley O. Stimson , Mitsuhiro Kaburaki , John C. Forster , Eric Delaurentis , Praburam Gopalraja , Patricia Rodriguez , Anantha Subramani
IPC分类号： C23C1400
CPC分类号： H01J37/32431
摘要： Apparatus for supporting a substrate such as a semiconductor wafer in a process chamber to improve power coupling through the substrate. The apparatus contains a pedestal assembly and a pedestal cover positioned over the top surface of and circumscribing the pedestal assembly for electrically isolating the pedestal assembly. The pedestal cover reduces conductive film growth in the wafer process region. As such, RF wafer biasing power from the pedestal assembly remains coupled through the substrate during processing.
摘要翻译： 用于在处理室中支撑诸如半导体晶片的衬底的装置，以改善通过衬底的功率耦合。 该装置包括一个基座组件和一个位于盖子顶部表面上并围绕基座组件的基座盖，用于电绝缘基座组件。 基座盖减少晶片工艺区域中的导电膜生长。 因此，来自基座组件的RF晶片偏置功率在处理期间保持通过衬底耦合。
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公开(公告)号：US06344419B1
公开(公告)日：2002-02-05
申请号：US09454355
申请日：1999-12-03
IPC分类号： H01L2130
CPC分类号： C23C14/345 , C23C14/046 , H01J37/32082 , H01J37/32431 , H01J37/3405 , H01L21/2855 , H01L21/76877
摘要： The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. In one embodiment, one or both of the signals to the substrate and the target are modulated. Preferably, the modulated signal to the substrate includes a negative voltage portion and a zero voltage portion.
摘要翻译： 本发明提供一种使用溅射电离材料在基板上实现一种或多种材料的适形步骤覆盖的方法和装置。 目标物提供由等离子体溅射的材料源，然后由感应线圈电离，从而产生电子和离子。 在一个实施例中，对衬底和靶的信号中的一个或两个进行调制。 优选地，到衬底的调制信号包括负电压部分和零电压部分。
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公开(公告)号：US09062372B2
公开(公告)日：2015-06-23
申请号：US11933086
申请日：2007-10-31
申请人： Praburam Gopalraja , Jianming Fu , Xianmin Tang , John C. Forster , Umesh Kelkar
发明人： Praburam Gopalraja , Jianming Fu , Xianmin Tang , John C. Forster , Umesh Kelkar
CPC分类号： C23C14/345 , C23C14/35 , H01J37/32706 , H01J37/3408 , H01J37/3455
摘要： A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.
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