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    Method and apparatus for performing high pressure physical vapor deposition
    1.
    发明授权
    Method and apparatus for performing high pressure physical vapor deposition 有权
    用于进行高压物理气相沉积的方法和装置

    公开(公告)号：US06461483B1

    公开(公告)日：2002-10-08

    申请号：US09523333

    申请日：2000-03-10

    申请人： Praburam Gopalraja ,  Bradley O. Stimson ,  John C. Forster ,  Wei Wang

    发明人： Praburam Gopalraja ,  Bradley O. Stimson ,  John C. Forster ,  Wei Wang

    IPC分类号： C23C1432

    CPC分类号： H01J37/321 ,  C23C14/046 ,  C23C14/358 ,  H01J37/32706 ,  H01J37/32733 ,  H01J37/34 ,  H01J37/3405

    摘要： A method and apparatus that operates at a high pressure of at least one torr for improving sidewall coverage within trenches and vias in a substrate. The apparatus comprises a chamber enclosing a target and a pedestal, a process gas that provides a process gas in the chamber, a pump for maintaining the high pressure of at least about one torr in the chamber and a power source coupled to the target. Additionally, the distance between the target and the substrate is set to ensure that collisions between the sputtered particles and the plasma occur in the trenches and vias on the substrate. The method comprises the steps of providing a process gas into the chamber such that the gas pressure is at least about one torr, generating a plasma from the process gas, and sputtering material from the target.

    摘要翻译： 一种在至少一个托的高压下操作以改善衬底中的沟槽和通孔内的侧壁覆盖的方法和装置。 该装置包括一个包围一个目标和一个基座的腔室，一个在腔室中提供一个处理气体的处理气体，一个保持室内至少约一托的高压的泵和一个耦合到目标的电源。 此外，靶和衬底之间的距离设定为确保溅射的粒子和等离子体之间的碰撞发生在衬底上的沟槽和通孔中。 该方法包括以下步骤：将工艺气体提供到室中，使得气体压力为至少约一乇，从工艺气体产生等离子体，以及从靶材溅射材料。

    Method and apparatus for forming a barrier layer on a substrate
    6.
    发明授权
    Method and apparatus for forming a barrier layer on a substrate 有权
    在基板上形成阻挡层的方法和装置

    公开(公告)号：US06887786B2

    公开(公告)日：2005-05-03

    申请号：US10409406

    申请日：2003-04-07

    申请人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John C. Forster ,  Jick M. Yu

    发明人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John C. Forster ,  Jick M. Yu

    IPC分类号： C23C14/04 ,  C23C14/06 ,  C23C14/18 ,  C23C14/58 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/185 ,  C23C14/5873 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76865

    摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.

    摘要翻译： 提供了第一种方法，用于通过在（1）形成在基底上的金属特征的基底上溅射沉积氮化钽层而在衬底上形成阻挡层; （2）形成在所述金属特征上的电介质层; 和（3）形成在电介质层中的通孔以暴露金属特征。 通孔具有侧壁和底部，宽度为约0.18微米或更小。 氮化钽层沉积在通孔的侧壁和底部以及电介质层的场区上; 并且在场区域具有至少约200埃的厚度。 第一种方法还包括在相同的室中在衬底上溅射沉积钽层。 该钽层的厚度在场区域上小于约100埃。 提供其他方面。

    Method and apparatus for forming a uniform layer on a workpiece during sputtering
    7.
    发明授权
    Method and apparatus for forming a uniform layer on a workpiece during sputtering 失效
    溅射期间在工件上形成均匀层的方法和装置

    公开(公告)号：US06409890B1

    公开(公告)日：2002-06-25

    申请号：US09362917

    申请日：1999-07-27

    申请人： Howard E. Grunes ,  Zheng Xu ,  Praburam Gopalraja ,  John C. Forster ,  Ralf Hofmann ,  Anantha Subramani

    发明人： Howard E. Grunes ,  Zheng Xu ,  Praburam Gopalraja ,  John C. Forster ,  Ralf Hofmann ,  Anantha Subramani

    IPC分类号： C23C1435

    CPC分类号： H01J37/321 ,  C23C14/044 ,  C23C14/358 ,  H01J37/3447

    摘要： Embodiments include devices and methods for sputtering material onto a workpiece in a chamber which includes a plasma generation area and a target. A coil is positioned to inductively couple energy into the plasma generation area to generate a plasma. A body is positioned between the workpiece and the target to prevent an amount of target material from being sputtered onto the workpiece. The body prevents an amount of target material from being sputtered onto the workpiece. The body may act as a dark space shield and inhibit plasma formation between the body and the target. The body may also act as a physical shield to block sputtered material from accumulating on the workpiece.

    摘要翻译： 实施例包括用于在包括等离子体产生区域和靶子的室中将材料溅射到工件上的装置和方法。 线圈被定位成将能量感应地耦合到等离子体产生区域中以产生等离子体。 主体位于工件和目标之间，以防止一定量的目标材料溅射到工件上。 该主体防止一定量的目标材料溅射到工件上。 身体可以作为暗空间屏蔽，并且抑制身体和目标之间的血浆形成。 主体还可以作为物理屏蔽来阻止溅射的材料积聚在工件上。