Apparatus and method for repairing a semiconductor memory
    9.
    发明授权
    Apparatus and method for repairing a semiconductor memory 有权
    用于修复半导体存储器的装置和方法

    公开(公告)号:US07492652B2

    公开(公告)日:2009-02-17

    申请号:US11876477

    申请日:2007-10-22

    IPC分类号: G11C7/00

    摘要: An apparatus and method for repairing a semiconductor memory device includes a first memory cell array, a first redundant cell array and a repair circuit configured to nonvolatilely store a first address designating at least one defective memory cell in the first memory cell array. A first volatile cache stores a first cached address corresponding to the first address designating the at least one defective memory cell. The repair circuit distributes the first address designating the at least one defective memory cell of the first memory cell array to the first volatile cache. Match circuitry substitutes at least one redundant memory cell from the first redundant cell array for the at least one defective memory cell in the first memory cell array when a first memory access corresponds to the first cached address.

    摘要翻译: 用于修复半导体存储器件的装置和方法包括:第一存储单元阵列,第一冗余单元阵列和修复电路,被配置为在第一存储单元阵列中非易失性地存储指定至少一个有缺陷的存储单元的第一地址。 第一易失性高速缓存存储对应于指定所述至少一个有缺陷的存储器单元的第一地址的第一高速缓存地址。 修复电路将指定第一存储单元阵列的至少一个缺陷存储单元的第一地址分配给第一易失性高速缓存。 当第一存储器访问对应于第一缓存地址时,匹配电路将来自第一冗余单元阵列的至少一个冗余存储单元替换为第一存储单元阵列中的至少一个有缺陷的存储单元。