公开(公告)号：US20190385837A1

公开(公告)日：2019-12-19

申请号：US16439377

申请日：2019-06-12

Applicant: Brewer Science, Inc.

Inventor： Andrea M. Chacko ,  Vandana Krishnamurthy ,  Yichen Liang ,  Hao Lee ,  Stephen Grannemann ,  Douglas J. Guerrero

IPC: H01L21/027 ,  H01L21/02 ,  G03F1/24 ,  G03F7/20

Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US20240222122A1

公开(公告)日：2024-07-04

申请号：US18607956

申请日：2024-03-18

Applicant: Brewer Science, Inc.

Inventor： Andrea M. Chacko ,  Vandana Krishnamurthy ,  Yichen Liang ,  Hao Lee ,  Stephen Grannemann ,  Douglas J. Guerrero

IPC: H01L21/027 ,  G03F1/24 ,  G03F7/00 ,  H01L21/02

CPC classification number: H01L21/0274 ,  G03F1/24 ,  G03F7/70033 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02422

Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US11361967B2

公开(公告)日：2022-06-14

申请号：US16999223

申请日：2020-08-21

Applicant: Brewer Science, Inc.

Inventor： Yichen Liang ,  Andrea M. Chacko ,  Yubao Wang ,  Douglas J. Guerrero

IPC: H01L21/033 ,  H01L21/027

Abstract: New lithographic compositions for use as EUV silicon hardmask layers are provided. The present invention provides methods of fabricating microelectronic structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing a silicon hardmask layer immediately below the photoresist layer. The silicon hardmask layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon hardmask layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US20210057219A1

公开(公告)日：2021-02-25

申请号：US16999223

申请日：2020-08-21

Applicant: Brewer Science, Inc.

Inventor： Yichen Liang ,  Andrea M. Chacko ,  Yubao Wang ,  Douglas J. Guerrero

IPC: H01L21/033 ,  H01L21/027

Abstract: New lithographic compositions for use as EUV silicon hardmask layers are provided. The present invention provides methods of fabricating microelectronic structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing a silicon hardmask layer immediately below the photoresist layer. The silicon hardmask layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon hardmask layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US11972948B2

公开(公告)日：2024-04-30

申请号：US16439377

申请日：2019-06-12

Applicant: Brewer Science, Inc.

Inventor： Andrea M. Chacko ,  Vandana Krishnamurthy ,  Yichen Liang ,  Hao Lee ,  Stephen Grannemann ,  Douglas J. Guerrero

IPC: G03F7/00 ,  G03F1/24 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/0274 ,  G03F1/24 ,  G03F7/70033 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02422

Abstract: New lithographic compositions for use as EUV adhesion layers are provided. The present invention provides methods of fabricating microelectronics structures using those compositions as well as structures formed by those methods. The method involves utilizing an adhesion layer immediately below the photoresist layer. The adhesion layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate, such as an alpha-carbon, spin-on carbon, spin-on silicon hardmask, metal hardmask, or deposited silicon layer. The preferred adhesion layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

公开(公告)号：US09249013B2

公开(公告)日：2016-02-02

申请号：US13862720

申请日：2013-04-15

Applicant: Brewer Science Inc.

Inventor： Yubao Wang ,  Mary Ann Hockey ,  Douglas J. Guerrero ,  Vandana Krishnamurthy ,  Robert C. Cox

IPC: G03F7/26 ,  B81C1/00 ,  B81B1/00 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311

CPC classification number: B81C1/0038 ,  B81B1/00 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/26 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  Y10T428/24612 ,  Y10T428/24802

Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.

Abstract translation: 提供了用于定向自组装图案化技术的组合物，其避免在该过程中需要单独的抗反射涂层和刷中性层。 还提供了用于定向自组装的方法，其中诸如定向自组装嵌段共聚物的自组装材料可以直接施加到硅硬掩模中性层，然后自组装形成所需图案。 本文还公开了定向自组装图案结构。

公开(公告)号：US20130273330A1

公开(公告)日：2013-10-17

申请号：US13862720

申请日：2013-04-15

Applicant: BREWER SCIENCE INC.

Inventor： Yubao Wang ,  Mary Ann Hockey ,  Douglas J. Guerrero ,  Vandana Krishnamurthy ,  Robert C. Cox

IPC: B81C1/00 ,  B81B1/00

CPC classification number: B81C1/0038 ,  B81B1/00 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/26 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  Y10T428/24612 ,  Y10T428/24802

Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.

Abstract translation: 提供了用于定向自组装图案化技术的组合物，其避免在该过程中需要单独的抗反射涂层和刷中性层。 还提供了用于定向自组装的方法，其中诸如定向自组装嵌段共聚物的自组装材料可以直接施加到硅硬掩模中性层，然后自组装形成所需图案。 本文还公开了定向自组装图案结构。