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公开(公告)号：US10961383B2
公开(公告)日：2021-03-30
申请号：US16133051
申请日：2018-09-17
Applicant: Brewer Science, Inc.
Inventor： Kui Xu , Richard Elsworth Daugherty, Jr. , Daniel Patrick Sweat , Mary Ann Hockey , Eric Calderas , Megan Bennett
Abstract: Novel block copolymers (“BCPs”) having non-random distributions of comonomers within at least one of the blocks and methods of using those BCPs in directed self-assembly (“DSA”) processes are provided. The non-random (e.g., gradient-creating) distributions can be customized in order to concentrate the desired comonomer properties in predetermined areas of the BCP. These BCPs can achieve perpendicular orientation with simple annealing and offer superior long-range ordering and lower defectivity when compared to prior art BCPs. These BCPs can be incorporated into compositions that simultaneously offer the benefits of high-χ and rapid thermal-annealing kinetics while maintaining similar or improved guide process windows when compared to prior art BCPs.
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公开(公告)号：US10421878B2
公开(公告)日：2019-09-24
申请号：US14599103
申请日：2015-01-16
Applicant: Brewer Science Inc.
Inventor： Kui Xu , Mary Ann Hockey , Eric Calderas
IPC: C09D153/00 , C08F293/00 , G03F7/00
Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer (BCP) is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks and is selected to have a high interaction parameter (χ). The BCPs are able to form perpendicular lamellae by simple thermal annealing on a neutralized substrate, without a top coat. The BCPs are also capable of micro-phase separating into lines and spaces measuring at 10 nm or smaller, with sub-20-nm L0 capability.
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公开(公告)号：US20190233636A1
公开(公告)日：2019-08-01
申请号：US16133051
申请日：2018-09-17
Applicant: Brewer Science, Inc.
Inventor： Kui Xu , Richard Elsworth Daugherty, JR. , Daniel Patrick Sweat , Mary Ann Hockey , Eric Calderas , Megan Bennett
Abstract: Novel block copolymers (“BCPs”) having non-random distributions of comonomers within at least one of the blocks and methods of using those BCPs in directed self-assembly (“DSA”) processes are provided. The non-random (e.g., gradient-creating) distributions can be customized in order to concentrate the desired comonomer properties in predetermined areas of the BCP. These BCPs can achieve perpendicular orientation with simple annealing and offer superior long-range ordering and lower defectivity when compared to prior art BCPs. These BCPs can be incorporated into compositions that simultaneously offer the benefits of high-χ and rapid thermal-annealing kinetics while maintaining similar or improved guide process windows when compared to prior art BCPs.
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Patent Agency Ranking
公开(公告)号：US20150197594A1
公开(公告)日：2015-07-16
申请号：US14599103
申请日：2015-01-16
Applicant: Brewer Science Inc.
Inventor： Kui Xu , Mary Ann Hockey , Eric Calderas
IPC: C08F299/04 , C09D153/00
Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer (BCP) is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks and is selected to have a high interaction parameter (χ). The BCPs are able to form perpendicular lamellae by simple thermal annealing on a neutralized substrate, without a top coat. The BCPs are also capable of micro-phase separating into lines and spaces measuring at 10 nm or smaller, with sub-20-nm L0 capability.
Abstract translation: 提供了用于定向自组装（DSA）图案化技术的组合。 还提供了用于定向自组装的方法，其中将包含嵌段共聚物（BCP）的DSA组合物施加到基材上，然后自组装形成所需图案。 嵌段共聚物包括至少两个嵌段并且被选择为具有高相互作用参数（χ）。 BCP能够通过在中和的基材上进行简单的热退火而形成垂直薄片，而不需要顶涂层。 BCP还能够将微相分离成10nm或更小的线和空间，具有低于20nm的L0能力。
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公开(公告)号：US09249013B2
公开(公告)日：2016-02-02
申请号：US13862720
申请日：2013-04-15
Applicant: Brewer Science Inc.
Inventor： Yubao Wang , Mary Ann Hockey , Douglas J. Guerrero , Vandana Krishnamurthy , Robert C. Cox
IPC: G03F7/26 , B81C1/00 , B81B1/00 , H01L21/02 , H01L21/033 , H01L21/311
CPC classification number: B81C1/0038 , B81B1/00 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , G03F7/26 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/0337 , H01L21/31144 , Y10T428/24612 , Y10T428/24802
Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.
Abstract translation: 提供了用于定向自组装图案化技术的组合物，其避免在该过程中需要单独的抗反射涂层和刷中性层。 还提供了用于定向自组装的方法，其中诸如定向自组装嵌段共聚物的自组装材料可以直接施加到硅硬掩模中性层，然后自组装形成所需图案。 本文还公开了定向自组装图案结构。
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6.发明授权Highly etch-resistant polymer block for use in block copolymers for directed self-assembly 有权用于嵌段共聚物的高抗蚀性聚合物嵌段用于定向自组装公开(公告)号：US09123541B2
公开(公告)日：2015-09-01
申请号：US14242551
申请日：2014-04-01
Applicant: Brewer Science Inc.
Inventor： Kui Xu , Mary Ann Hockey , Douglas Guerrero
IPC: H01L21/302 , H01L21/308 , H01L21/033 , H01L21/311 , C08L33/12
CPC classification number: H01L21/0331 , B81C1/00031 , B81C2201/0149 , C08F212/08 , C08F212/32 , C08F293/005 , C08F2438/03 , C08L33/12 , C09D125/08 , C09D125/14 , C09D125/16 , C09D153/00 , G03F7/0002 , H01L21/0337 , H01L21/31133 , H01L21/31138
Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.
Abstract translation: 提供了用于定向自组装（DSA）图案化技术的组合。 还提供了用于定向自组装的方法，其中将包含嵌段共聚物的DSA组合物施加到基材上，然后自组装形成所需图案。 嵌段共聚物包括至少两个不同蚀刻速率的嵌段，使得在蚀刻期间选择性地除去一个嵌段（例如聚甲基丙烯酸甲酯）。 因为较慢的蚀刻块（例如，聚苯乙烯）用添加剂进行修饰以进一步降低该块的蚀刻速率，所以较慢的蚀刻块保留在后面以将图案完全转移到下面的层。
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7.发明申请HIGHLY ETCH-RESISTANT POLYMER BLOCK FOR USE IN BLOCK COPOLYMERS FOR DIRECTED SELF-ASSEMBLY 有权用于方向自组装的嵌入式共聚物中的高耐蚀性聚合物嵌段公开(公告)号：US20140299969A1
公开(公告)日：2014-10-09
申请号：US14242551
申请日：2014-04-01
Applicant: Brewer Science Inc.
Inventor： Kui Xu , Mary Ann Hockey , Douglas Guerrero
IPC: H01L21/308
CPC classification number: H01L21/0331 , B81C1/00031 , B81C2201/0149 , C08F212/08 , C08F212/32 , C08F293/005 , C08F2438/03 , C08L33/12 , C09D125/08 , C09D125/14 , C09D125/16 , C09D153/00 , G03F7/0002 , H01L21/0337 , H01L21/31133 , H01L21/31138
Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.
Abstract translation: 提供了用于定向自组装（DSA）图案化技术的组合。 还提供了用于定向自组装的方法，其中将包含嵌段共聚物的DSA组合物施加到基材上，然后自组装形成所需图案。 嵌段共聚物包括至少两个不同蚀刻速率的嵌段，使得在蚀刻期间选择性地除去一个嵌段（例如聚甲基丙烯酸甲酯）。 因为较慢的蚀刻块（例如，聚苯乙烯）用添加剂进行修饰以进一步降低该块的蚀刻速率，所以较慢的蚀刻块保留在后面以将图案完全转移到下面的层。
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公开(公告)号：US20130273330A1
公开(公告)日：2013-10-17
申请号：US13862720
申请日：2013-04-15
Applicant: BREWER SCIENCE INC.
Inventor： Yubao Wang , Mary Ann Hockey , Douglas J. Guerrero , Vandana Krishnamurthy , Robert C. Cox
CPC classification number: B81C1/0038 , B81B1/00 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , G03F7/26 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/0337 , H01L21/31144 , Y10T428/24612 , Y10T428/24802
Abstract: Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein.
Abstract translation: 提供了用于定向自组装图案化技术的组合物，其避免在该过程中需要单独的抗反射涂层和刷中性层。 还提供了用于定向自组装的方法，其中诸如定向自组装嵌段共聚物的自组装材料可以直接施加到硅硬掩模中性层，然后自组装形成所需图案。 本文还公开了定向自组装图案结构。
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