公开(公告)号：US06537845B1

公开(公告)日：2003-03-25

申请号：US09942536

申请日：2001-08-30

申请人： Brian E. McCandless ,  William N. Shafarman

发明人： Brian E. McCandless ,  William N. Shafarman

IPC分类号： H01L2100

CPC分类号： H01L31/1836 ,  C23C6/00 ,  C23C18/1204 ,  C23C18/1225 ,  C23C18/1291 ,  C23C26/02 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02551 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/073 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

摘要： A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.

摘要翻译： 用于在基底上形成IIB-VIA族化合物的超薄半导体膜的化学表面沉积工艺。 该方法消除了在浴中均匀反应形成的微粒，大大提高了IIB族的利用率，并导致薄膜太阳能电池形成致密的粘附膜。 该方法包括将含有IIB族和VIA族VIA离子物质的预混合液体涂料组合物施加到预热的基底上。 来自基材的热量导致液体涂料组合物的IIB族和VIA族离子物质之间的非均相反应，从而在基材表面上形成固体反应产物膜。

公开(公告)号：US06676994B2

公开(公告)日：2004-01-13

申请号：US09819277

申请日：2001-03-28

申请人： Robert W. Birkmire ,  Erten Eser ,  Gregory M. Hanket ,  Brian E. McCandless

发明人： Robert W. Birkmire ,  Erten Eser ,  Gregory M. Hanket ,  Brian E. McCandless

IPC分类号： C23C1600

CPC分类号： C23C14/228 ,  C23C14/0629 ,  C23C14/0694

摘要： Thin films are produced by a method wherein a material is heated in a furnace placed inside a vacuum system. An inert gas is flown over/through the heated material. The vapors of the material are entrained in the carrier gas which is then directed onto a substrate heated to a temperature below that of the furnace temperature and placed in close proximity to the exit of the furnace.

摘要翻译： 通过一种方法制造薄膜，其中将材料在放置在真空系统内的炉中加热。 惰性气体流过/通过加热的材料。 材料的蒸气被夹带在载气中，然后将其引导到加热到低于炉温的温度的基底上，并放置在靠近炉的出口处。

公开(公告)号：US4909863A

公开(公告)日：1990-03-20

申请号：US218758

申请日：1988-07-13

申请人： Robert W. Birkmire ,  Brian E. McCandless

发明人： Robert W. Birkmire ,  Brian E. McCandless

IPC分类号： H01L21/465 ,  H01L25/04 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0336

CPC分类号： H01L31/0749 ,  H01L21/465 ,  H01L31/022466 ,  H01L31/0322 ,  H01L31/043 ,  Y02E10/541 ,  Y10S148/051 ,  Y10S438/964

摘要： Semiconductor films and photovoltaic devices prepared therefrom are provided wherein the semiconductor films have a specular surface with a texture less than about 0.25 micron greater than the average planar film surface and wherein the semiconductor films are surface modified by exposing the surface to an aqueous solution of bromine containing an acid or salt and continuing such exposure for a time sufficient to etch the surface.

摘要翻译： 提供了由其制备的半导体膜和光伏器件，其中半导体膜具有比平均平面膜表面小约0.25微米的纹理的镜面，并且其中半导体膜通过将表面暴露于溴水溶液 含有酸或盐并持续这样的暴露足以蚀刻表面的时间。

公开(公告)号：US06251701B1

公开(公告)日：2001-06-26

申请号：US09516686

申请日：2000-03-01

申请人： Brian E. McCandless

发明人： Brian E. McCandless

IPC分类号： H01L2100

CPC分类号： H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

摘要： An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

摘要翻译： 提供了用于生产太阳能电池的全干法，其包括首先对II-VI半导体进行热退火; 提高退火层的导电性和晶粒尺寸; 修饰表面并在增强层上沉积碲层; 然后将铜沉积到碲层上，以便在该层上产生铜碲化合物。

公开(公告)号：US4709466A

公开(公告)日：1987-12-01

申请号：US723054

申请日：1985-04-15

申请人： Brian E. McCandless ,  Robert W. Birkmire

发明人： Brian E. McCandless ,  Robert W. Birkmire

IPC分类号： H01L31/073 ,  H01L31/18

CPC分类号： H01L31/073 ,  H01L31/1828 ,  H01L31/186 ,  Y02E10/543 ,  Y02P70/521

摘要： Thin film photovoltaic solar cells are made by forming the cell structure from a number of layers including the contact layers and semiconductor layers. At least one of the semiconductor layers is a tellurium containing II-VI compound. After the structure is formed, it is heated to temperatures above 300.degree. C. and then rapidly cooled at rates greater than 10.degree. C./s. Cells comprising CdS and CdTe have increased fill factor when the fabrication process includes heating and rapid cooling.

摘要翻译： 通过从包括接触层和半导体层的多个层形成电池结构来制造薄膜光伏太阳能电池。 至少一个半导体层是含Ⅵ-VI化合物的碲。 在结构形成之后，将其加热到高于300℃的温度，然后以大于10℃/ s的速率快速冷却。 当制造工艺包括加热和快速冷却时，包含CdS和CdTe的电池具有增加的填充因子。