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公开(公告)号：US09166150B2
公开(公告)日：2015-10-20
申请号：US13725235
申请日：2012-12-21
CPC分类号： H01L43/02 , G11C11/155 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Spin transfer torque memory (STTM) devices incorporating a field plate for application of an electric field to reduce a critical current required for transfer torque induced magnetization switching. Embodiments utilize not only current-induced magnetic filed or spin transfer torque, but also electric field induced manipulation of magnetic dipole orientation to set states in a magnetic device element (e.g., to write to a memory element). An electric field generated by a voltage differential between an MTJ electrode and the field plate applies an electric field to a free magnetic layer of a magnetic tunneling junction (MTJ) to modulate one or more magnetic properties over at least a portion of the free magnetic layer.
摘要翻译： 具有用于施加电场的场板的旋转转矩存储器（STTM）装置，以减少传递转矩感应磁化切换所需的临界电流。 实施例不仅利用电流感应磁场或自旋转移转矩，还利用电场诱导的磁偶极取向的操纵来设置磁性器件元件中的状态（例如，写入存储元件）。 由MTJ电极和场板之间的电压差产生的电场向磁性隧道结（MTJ）的自由磁性层施加电场，以在至少一部分自由磁性层上调制一个或多个磁性能 。
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2.发明申请METHOD FOR REDUCING SIZE AND CENTER POSITIONING OF MAGNETIC MEMORY ELEMENT CONTACTS 审中-公开减少磁记忆元件接触尺寸和中心定位的方法公开(公告)号：US20140167191A1
公开(公告)日：2014-06-19
申请号：US13996530
申请日：2011-12-20
申请人： Brian S. Doyle , Yong Ju Lee , Charles C. Kuo , David L. Kencke , Kaan Oguz , Roksana Golizadeh Mojarad , Uday Shah
发明人： Brian S. Doyle , Yong Ju Lee , Charles C. Kuo , David L. Kencke , Kaan Oguz , Roksana Golizadeh Mojarad , Uday Shah
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/12
摘要： A method of centering a contact on a layer of a magnetic memory device. In one embodiment, a spacers is formed in an opening surrounding the upper layer and the contact is formed within the spacer. The spacer is formed from an anisotropically etched conformal layer deposited on an upper surface and into the opening.
摘要翻译： 一种使磁存储器件的层上的触点居中的方法。 在一个实施例中，在围绕上层的开口中形成间隔物，并且在间隔物内形成接触。 间隔物由沉积在上表面和开口中的各向异性蚀刻的保形层形成。
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3.发明申请MEMORY WITH ELEMENTS HAVING TWO STACKED MAGNETIC TUNNELING JUNCTION (MTJ) DEVICES 审中-公开具有两个堆叠磁性隧道结（MTJ）装置的元件的记忆公开(公告)号：US20140204661A1
公开(公告)日：2014-07-24
申请号：US13995631
申请日：2011-12-22
申请人： Brian S. Doyle , Arijit Raychowdhury , Yong Ju Lee , Charles C. Kuo , Kaan Oguz , David L. Kencke , Robert S. Chau , Roksana Golizadeh Mojarad
发明人： Brian S. Doyle , Arijit Raychowdhury , Yong Ju Lee , Charles C. Kuo , Kaan Oguz , David L. Kencke , Robert S. Chau , Roksana Golizadeh Mojarad
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C2213/71 , G11C2213/78 , H01L27/228 , H01L43/08
摘要： A magnetic memory having memory elements each with two magnetic tunneling junction (MTJ) devices is disclosed. The devices in each element are differentially programmed with complementary data. The devices for each element are stacked one above the other so that the element requires no more substrate area than a single MTJ device.
摘要翻译： 公开了具有各自具有两个磁隧道结（MTJ）装置的存储元件的磁存储器。 每个元件中的器件都用补充数据进行差分编程。 每个元件的器件彼此层叠，使得元件不需要比单个MTJ器件更多的衬底面积。
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4.发明申请SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH HALF-METAL AND METHOD TO WRITE AND READ THE DEVICE 有权具有高金属的转子扭矩存储器（STTM）装置和写入和读取装置的方法公开(公告)号：US20130336045A1
公开(公告)日：2013-12-19
申请号：US13996500
申请日：2011-12-19
申请人： Charles C. Kuo , Roksana Golizadeh Mojarad , Brian S. Doyle , David L. Kencke , Kaan Oguz , Robert S. Chau
发明人： Charles C. Kuo , Roksana Golizadeh Mojarad , Brian S. Doyle , David L. Kencke , Kaan Oguz , Robert S. Chau
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Spin transfer torque memory (STTM) devices with half-metals and methods to write and read the devices are described. For example, a magnetic tunneling junction includes a free magnetic layer, a fixed magnetic layer, and a dielectric layer disposed between the free magnetic layer and the fixed magnetic layer. One or both of the free magnetic layer and the fixed magnetic layer includes a half-metal material at an interface with the dielectric layer.
摘要翻译： 描述了具有半金属的自旋转移转矩存储器（STTM）器件以及写入和读取器件的方法。 例如，磁性隧道结包括自由磁性层，固定磁性层和设置在自由磁性层和固定磁性层之间的电介质层。 自由磁性层和固定磁性层中的一个或两个包括与电介质层界面的半金属材料。
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5.发明申请Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers 审中-公开具有耦合自由磁性层的垂直自旋转移转矩存储器（STTM）装置公开(公告)号：US20150091110A1
公开(公告)日：2015-04-02
申请号：US14039668
申请日：2013-09-27
申请人： Charles C. Kuo , Kaan Oguz , Mark L. Doczy , Brian S. Doyle , Satyarth Suri , Robert S. Chau , David L. Kencke , Roksana Golizadeh Mojarad , Anurag Chaudhry
发明人： Charles C. Kuo , Kaan Oguz , Mark L. Doczy , Brian S. Doyle , Satyarth Suri , Robert S. Chau , David L. Kencke , Roksana Golizadeh Mojarad , Anurag Chaudhry
CPC分类号： H01L43/10 , G11C11/161 , G11C29/028 , G11C29/56008 , G11C29/56012 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and damping are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A first free magnetic layer is disposed above the dielectric layer. A second free magnetic layer is magnetically coupled with the first free magnetic layer.
摘要翻译： 描述了具有增强的稳定性和阻尼的垂直自旋转移转矩存储器（STTM）装置。 例如，用于磁隧道结的材料层堆叠包括固定磁性层。 电介质层设置在固定磁性层的上方。 第一自由磁性层设置在电介质层的上方。 第二自由磁性层与第一自由磁性层磁耦合。
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6.发明授权公开(公告)号：US09728238B2
公开(公告)日：2017-08-08
申请号：US13996500
申请日：2011-12-19
申请人： Charles C. Kuo , Roksana Golizadeh Mojarad , Brian S. Doyle , David L. Kencke , Kaan Oguz , Robert S. Chau
发明人： Charles C. Kuo , Roksana Golizadeh Mojarad , Brian S. Doyle , David L. Kencke , Kaan Oguz , Robert S. Chau
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Spin transfer torque memory (STTM) devices with half-metals and methods to write and read the devices are described. For example, a magnetic tunneling junction includes a free magnetic layer, a fixed magnetic layer, and a dielectric layer disposed between the free magnetic layer and the fixed magnetic layer. One or both of the free magnetic layer and the fixed magnetic layer includes a half-metal material at an interface with the dielectric layer.
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7.发明申请公开(公告)号：US20140349415A1
公开(公告)日：2014-11-27
申请号：US14454682
申请日：2014-08-07
申请人： Kaan Oguz , Mark L. Doczy , Brian Doyle , Uday Shah , David L. Kencke , Roksana Golizadeh Mojarad , Robert S. Chau
发明人： Kaan Oguz , Mark L. Doczy , Brian Doyle , Uday Shah , David L. Kencke , Roksana Golizadeh Mojarad , Robert S. Chau
IPC分类号： H01L43/12
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/18 , H01F10/1933 , H01F10/3254 , H01F10/3286 , H01F41/325 , H01L27/226 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.
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8.发明授权Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer 有权具有磁各向异性增强层和结晶阻挡层的垂直MTJ叠层公开(公告)号：US08980650B2
公开(公告)日：2015-03-17
申请号：US14454682
申请日：2014-08-07
申请人： Kaan Oguz , Mark L. Doczy , Brian Doyle , Uday Shah , David L. Kencke , Roksana Golizadeh Mojarad , Robert S. Chau
发明人： Kaan Oguz , Mark L. Doczy , Brian Doyle , Uday Shah , David L. Kencke , Roksana Golizadeh Mojarad , Robert S. Chau
IPC分类号： H01L21/00 , H01L43/12 , H01L43/08 , H01L29/82 , H01L27/22 , H01L43/10 , H01F10/32 , H01F10/193 , G11C11/16
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/18 , H01F10/1933 , H01F10/3254 , H01F10/3286 , H01F41/325 , H01L27/226 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.
摘要翻译： 适用于自旋转移转矩存储器（STTM）器件的磁隧道结（MTJ）包括垂直磁性层和通过结晶阻挡层与自由磁性层分离的一个或多个各向异性增强层。 在实施方案中，各向异性增强层改善了自由磁性层的垂直取向，而结晶势垒改善了隧道磁阻（TMR）比，同时自由磁层的晶体结构与隧穿层的结构更好地对准。
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9.发明授权Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer 有权具有磁各向异性增强层和结晶阻挡层的垂直MTJ叠层公开(公告)号：US08836056B2
公开(公告)日：2014-09-16
申请号：US13627968
申请日：2012-09-26
申请人： Kaan Oguz , Mark L. Doczy , Brian Doyle , Uday Shah , David L. Kencke , Roksana Golizadeh Mojarad , Robert S. Chau
发明人： Kaan Oguz , Mark L. Doczy , Brian Doyle , Uday Shah , David L. Kencke , Roksana Golizadeh Mojarad , Robert S. Chau
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/18 , H01F10/1933 , H01F10/3254 , H01F10/3286 , H01F41/325 , H01L27/226 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.
摘要翻译： 适用于自旋转移转矩存储器（STTM）器件的磁隧道结（MTJ）包括垂直磁性层和通过结晶阻挡层与自由磁性层分离的一个或多个各向异性增强层。 在实施方案中，各向异性增强层改善了自由磁性层的垂直取向，而结晶势垒改善了隧道磁阻（TMR）比，同时自由磁层的晶体结构与隧穿层的结构更好地对准。
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10.发明授权Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same 有权具有偏移单元的垂直自旋转移转矩存储器（STTM）器件及其形成方法公开(公告)号：US09105839B2
公开(公告)日：2015-08-11
申请号：US14333180
申请日：2014-07-16
申请人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
发明人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L27/228 , H01L29/66007 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.
摘要翻译： 描述具有偏移单元的垂直自旋转移转矩存储器（STTM）器件和制造具有偏置单元的垂直STTM器件的方法。 例如，自旋转矩传递存储器（STTM）阵列包括设置在衬底上方并且仅具有第一STTM器件的第一负载线。 STTM阵列还包括设置在基板上方的第二负载线，与第一负载线相邻，并且仅具有第二STTM器件，与第一STTM器件非共面的第二STTM器件。
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