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公开(公告)号：US12122668B2
公开(公告)日：2024-10-22
申请号：US17858855
申请日：2022-07-06
发明人： Charles T. Black , Atikur Rahman , Matthew Eisaman , Ahsan Ashraf
IPC分类号： B81C1/00 , B82Y30/00 , B82Y40/00 , G02B1/118 , G03F7/00 , G03F7/40 , H01L21/027 , H01L21/033 , H01L21/3065 , H01L21/308 , H01L31/0236
CPC分类号： B81C1/00031 , B81C1/00111 , B82Y30/00 , G02B1/118 , G03F7/0002 , G03F7/405 , H01L21/0271 , H01L21/0273 , H01L21/0337 , H01L21/3065 , H01L21/3086 , H01L31/02363 , B81C2201/0132 , B81C2201/0149 , B82Y40/00 , H01J2237/334 , Y02E10/50
摘要： Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
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公开(公告)号：US20160137799A1
公开(公告)日：2016-05-19
申请号：US14897441
申请日：2014-06-13
CPC分类号： H01L21/3086 , B81C1/00111 , B81C2201/0149 , G02B1/118 , G02B1/18 , G03F7/0002 , G03F7/405 , H01J2237/334 , H01L21/0271 , H01L21/0273 , H01L21/0337 , H01L21/3065
摘要： Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.
摘要翻译： 描述了用于蚀刻衬底中的纳米结构的方法和系统的技术。 所述方法可以包括在衬底上沉积图案化的嵌段共聚物。 该方法可以包括将前体施加到图案化的嵌段共聚物上以产生渗透的嵌段共聚物。 前体可能渗入第一聚合物嵌段结构域并产生一种材料。 所述方法可以包括将有效去除聚合物嵌段结构域的去除剂施加到渗透的嵌段共聚物以产生该材料的图案。 该方法可以包括蚀刻衬底。 材料的图案可以掩盖衬底以图案化蚀刻。 蚀刻可以在衬底中产生纳米结构的条件下进行。 该方法可以包括去除材料的图案并用疏水涂层涂覆纳米结构和基底的表面。
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公开(公告)号：US20220402754A1
公开(公告)日：2022-12-22
申请号：US17858855
申请日：2022-07-06
发明人： Charles T. Black , Atikur Rahman , Matthew Eisaman , Ahsan Ashraf
IPC分类号： B81C1/00 , B82Y30/00 , H01L31/0236 , G02B1/118 , G03F7/00 , G03F7/40 , H01L21/027 , H01L21/033 , H01L21/3065 , H01L21/308
摘要： Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
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公开(公告)号：US20160139302A1
公开(公告)日：2016-05-19
申请号：US14897481
申请日：2014-06-13
发明人： Charles T. Black , Atikur Rahman , Matthew Eisaman , Ahsan Ashraf
CPC分类号： H01L21/3086 , B81C2201/0149 , G02B1/118 , G03F7/0002 , G03F7/405 , H01J2237/334 , H01L21/0271 , H01L21/0273 , H01L21/0337 , H01L21/3065
摘要： Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
摘要翻译： 描述了用于蚀刻衬底中的纳米结构的方法和系统的技术。 所述方法可以包括在衬底上沉积图案化的嵌段共聚物。 图案化的嵌段共聚物可包括第一和第二聚合物嵌段结构域。 该方法可以包括将前体施加到图案化的嵌段共聚物上以产生渗透的嵌段共聚物。 该前体可以渗入第一聚合物嵌段结构域并在第一聚合物嵌段结构域中产生一种材料。 所述方法可以包括将去除剂施加到渗透的嵌段共聚物以产生图案化材料。 去除剂可以有效地从基底去除第一和第二聚合物嵌段结构域。 该方法可以包括蚀刻衬底。 衬底上的图案化材料可以掩盖衬底以图案蚀刻。 蚀刻可以在衬底中产生纳米结构的条件下进行。
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公开(公告)号：US10882739B2
公开(公告)日：2021-01-05
申请号：US16123083
申请日：2018-09-06
发明人： Charles T. Black , Atikur Rahman , Matthew Eisaman , Ahsan Ashraf
IPC分类号： B81C1/00 , B82Y30/00 , H01L31/0236 , G02B1/118 , G03F7/00 , G03F7/40 , H01L21/027 , H01L21/033 , H01L21/3065 , H01L21/308 , B82Y40/00
摘要： Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
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公开(公告)号：US10290507B2
公开(公告)日：2019-05-14
申请号：US14897481
申请日：2014-06-13
发明人： Charles T. Black , Atikur Rahman , Matthew Eisaman , Ahsan Ashraf
IPC分类号： H01L21/308 , G02B1/118 , G03F7/40 , H01L21/033 , G03F7/00 , H01L21/027 , H01L21/3065
摘要： Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
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公开(公告)号：US20190109011A1
公开(公告)日：2019-04-11
申请号：US16210156
申请日：2018-12-05
IPC分类号： H01L21/308 , H01L21/3065 , H01L21/027 , G03F7/40 , G02B1/118 , G03F7/00 , G02B1/18 , B81C1/00 , H01L21/033
摘要： Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.
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公开(公告)号：US10189704B2
公开(公告)日：2019-01-29
申请号：US14897441
申请日：2014-06-13
IPC分类号： B81C1/00 , H01L21/027 , G03F7/40 , G03F7/00 , G02B1/118 , H01L21/033 , H01L21/3065 , H01L21/308 , G02B1/18
摘要： Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.
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