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    FORMATION OF ANTIREFLECTIVE SURFACES
    3.
    发明申请
    FORMATION OF ANTIREFLECTIVE SURFACES 有权

    公开(公告)号：US20220402754A1

    公开(公告)日：2022-12-22

    申请号：US17858855

    申请日：2022-07-06

    Applicant: Brookhaven Science Associates LLC

    Inventor： Charles T. Black ,  Atikur Rahman ,  Matthew Eisaman ,  Ahsan Ashraf

    IPC: B81C1/00 ,  B82Y30/00 ,  H01L31/0236 ,  G02B1/118 ,  G03F7/00 ,  G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/308

    Abstract: Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.

    Formation of Antireflective Surfaces
    4.
    发明申请
    Formation of Antireflective Surfaces 审中-公开
    形成抗反射表面

    公开(公告)号：US20160139302A1

    公开(公告)日：2016-05-19

    申请号：US14897481

    申请日：2014-06-13

    Applicant: BROOKHAVEN SCIENCE ASSOCIATES LLC

    Inventor： Charles T. Black ,  Atikur Rahman ,  Matthew Eisaman ,  Ahsan Ashraf

    IPC: G02B1/118 ,  H01J37/32

    CPC classification number: H01L21/3086 ,  B81C2201/0149 ,  G02B1/118 ,  G03F7/0002 ,  G03F7/405 ,  H01J2237/334 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3065

    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.

    Abstract translation: 描述了用于蚀刻衬底中的纳米结构的方法和系统的技术。 所述方法可以包括在衬底上沉积图案化的嵌段共聚物。 图案化的嵌段共聚物可包括第一和第二聚合物嵌段结构域。 该方法可以包括将前体施加到图案化的嵌段共聚物上以产生渗透的嵌段共聚物。 该前体可以渗入第一聚合物嵌段结构域并在第一聚合物嵌段结构域中产生一种材料。 所述方法可以包括将去除剂施加到渗透的嵌段共聚物以产生图案化材料。 去除剂可以有效地从基底去除第一和第二聚合物嵌段结构域。 该方法可以包括蚀刻衬底。 衬底上的图案化材料可以掩盖衬底以图案蚀刻。 蚀刻可以在衬底中产生纳米结构的条件下进行。

    Formation of antireflective surfaces
    7.
    发明授权
    Formation of antireflective surfaces 有权

    公开(公告)号：US10882739B2

    公开(公告)日：2021-01-05

    申请号：US16123083

    申请日：2018-09-06

    Applicant: Brookhaven Science Associates LLC

    Inventor： Charles T. Black ,  Atikur Rahman ,  Matthew Eisaman ,  Ahsan Ashraf

    IPC: B81C1/00 ,  B82Y30/00 ,  H01L31/0236 ,  G02B1/118 ,  G03F7/00 ,  G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/308 ,  B82Y40/00

    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.

    Formation of antireflective surfaces
    8.
    发明授权
    Formation of antireflective surfaces 有权

    公开(公告)号：US10290507B2

    公开(公告)日：2019-05-14

    申请号：US14897481

    申请日：2014-06-13

    Applicant: Brookhaven Science Associates, LLC

    Inventor： Charles T. Black ,  Atikur Rahman ,  Matthew Eisaman ,  Ahsan Ashraf

    IPC: H01L21/308 ,  G02B1/118 ,  G03F7/40 ,  H01L21/033 ,  G03F7/00 ,  H01L21/027 ,  H01L21/3065

    Abstract: Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.

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