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公开(公告)号：US20160181449A1
公开(公告)日：2016-06-23
申请号：US14945666
申请日：2015-11-19
发明人： Charles T. Black , Matthew Sfeir
IPC分类号： H01L31/0236 , H01L31/18
摘要： This disclosure provides embodiments of photovoltaic devices. The devices include a light-absorbing anode comprised of an electrically conductive material having a plasmonic structure, a diffusion barrier, and a cathode. The light-absorbing anode and the cathode are separated by the diffusion barrier.
摘要翻译： 本公开提供了光伏器件的实施例。 这些装置包括由具有等离子体结构的导电材料，扩散阻挡层和阴极构成的吸光阳极。 吸光阳极和阴极被扩散阻挡层隔开。
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2.发明申请Nanoconfinement Platform for Nanostructure Quantification via Grazing-Transmission X-ray Scattering 有权纳米结构的纳米结构定量平台通过放牧透射X射线散射公开(公告)号：US20150330920A1
公开(公告)日：2015-11-19
申请号：US14713081
申请日：2015-05-15
发明人： Charles T. Black , Kevin G. Yager
IPC分类号： G01N23/20 , G01N23/201
CPC分类号： G01N23/20025 , G01N23/201 , G01N2223/054 , G01N2223/309
摘要： A nano-confinement platform that may allow improved quantification of the structural order of nanometer-scale systems. Sample-holder ‘chips’ are designed for the GTSAXS experimental geometry. The platform involves fabricated nanostructured sample holders on and in one or more corners of a substrate support where the sample material of interest is positioned at the corner of the substrate support. In an embodiment, the substrate material making up the substrate support beneath the sample-holding area is removed. A scattering x-ray sample platform includes a substrate support arranged in a parallelepiped form, having a substantially flat base and a substantially flat top surface, the top surface being substantially parallel with the base, the parallelepiped having a plurality of corners. At least one corner of the substrate support has a sample holding area formed in the top surface of the substrate support and within a predetermined distance from the corner. The sample holding area includes a regular array of nano-wells formed in the top surface of the substrate support.
摘要翻译： 纳米限制平台可以改进纳米尺度系统的结构顺序的量化。 样品架“芯片”是为GTSAXS实验几何设计的。 该平台涉及在衬底支撑件的一个或多个角部上和之上的制造的纳米结构样品架，其中感兴趣的样品材料位于衬底支架的拐角处。 在一个实施例中，去除在样品保持区域下方构成基底支撑物的基底材料。 散射X射线样品平台包括布置成平行六面体形式的基底支撑件，具有基本上平坦的基部和基本平坦的顶表面，该顶表面基本上平行于基部，该平行六面体具有多个拐角。 衬底支撑件的至少一个角部具有形成在衬底支撑件的顶表面中并且距离拐角预定距离内的样品保持区域。 样品保持区域包括在衬底支撑体的顶表面中形成的纳米孔的规则阵列。
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公开(公告)号：US20150175761A1
公开(公告)日：2015-06-25
申请号：US14576479
申请日：2014-12-19
发明人： Chang-Yong Nam , Jovan Kamcev , Charles T. Black , Robert Grubbs
IPC分类号： C08J7/12
CPC分类号： C08J7/123 , C08J2353/00 , G03F7/0002
摘要： Technologies are described for methods for producing a pattern of a material on a substrate. The methods may comprise receiving a patterned block copolymer on a substrate. The patterned block copolymer may include a first polymer block domain and a second polymer block domain. The method may comprise exposing the patterned block copolymer to a light effective to oxidize the first polymer block domain in the patterned block copolymer. The method may comprise applying a precursor to the block copolymer. The precursor may infuse into the oxidized first polymer block domain and generate the material. The method may comprise applying a removal agent to the block copolymer. The removal agent may be effective to remove the first polymer block domain and the second polymer block domain from the substrate, and may not be effective to remove the material in the oxidized first polymer block domain.
摘要翻译： 技术描述了用于在衬底上生产材料图案的方法。 所述方法可以包括在基材上接收图案化的嵌段共聚物。 图案化的嵌段共聚物可以包括第一聚合物嵌段结构域和第二聚合物嵌段结构域。 该方法可以包括将图案化的嵌段共聚物暴露于有效氧化图案化嵌段共聚物中第一聚合物嵌段结构域的光。 该方法可以包括将前体施加到嵌段共聚物上。 前体可以注入氧化的第一聚合物嵌段结构域并产生材料。 该方法可以包括将去除剂施加到嵌段共聚物上。 除去剂可能有效地从底物中除去第一聚合物嵌段结构域和第二聚合物嵌段结构域，并且可能不有效地除去氧化的第一聚合物嵌段结构域中的材料。
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公开(公告)号：US20220402754A1
公开(公告)日：2022-12-22
申请号：US17858855
申请日：2022-07-06
发明人： Charles T. Black , Atikur Rahman , Matthew Eisaman , Ahsan Ashraf
IPC分类号： B81C1/00 , B82Y30/00 , H01L31/0236 , G02B1/118 , G03F7/00 , G03F7/40 , H01L21/027 , H01L21/033 , H01L21/3065 , H01L21/308
摘要： Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
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公开(公告)号：US20160139302A1
公开(公告)日：2016-05-19
申请号：US14897481
申请日：2014-06-13
发明人： Charles T. Black , Atikur Rahman , Matthew Eisaman , Ahsan Ashraf
CPC分类号： H01L21/3086 , B81C2201/0149 , G02B1/118 , G03F7/0002 , G03F7/405 , H01J2237/334 , H01L21/0271 , H01L21/0273 , H01L21/0337 , H01L21/3065
摘要： Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
摘要翻译： 描述了用于蚀刻衬底中的纳米结构的方法和系统的技术。 所述方法可以包括在衬底上沉积图案化的嵌段共聚物。 图案化的嵌段共聚物可包括第一和第二聚合物嵌段结构域。 该方法可以包括将前体施加到图案化的嵌段共聚物上以产生渗透的嵌段共聚物。 该前体可以渗入第一聚合物嵌段结构域并在第一聚合物嵌段结构域中产生一种材料。 所述方法可以包括将去除剂施加到渗透的嵌段共聚物以产生图案化材料。 去除剂可以有效地从基底去除第一和第二聚合物嵌段结构域。 该方法可以包括蚀刻衬底。 衬底上的图案化材料可以掩盖衬底以图案蚀刻。 蚀刻可以在衬底中产生纳米结构的条件下进行。
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公开(公告)号：US12122668B2
公开(公告)日：2024-10-22
申请号：US17858855
申请日：2022-07-06
发明人： Charles T. Black , Atikur Rahman , Matthew Eisaman , Ahsan Ashraf
IPC分类号： B81C1/00 , B82Y30/00 , B82Y40/00 , G02B1/118 , G03F7/00 , G03F7/40 , H01L21/027 , H01L21/033 , H01L21/3065 , H01L21/308 , H01L31/0236
CPC分类号： B81C1/00031 , B81C1/00111 , B82Y30/00 , G02B1/118 , G03F7/0002 , G03F7/405 , H01L21/0271 , H01L21/0273 , H01L21/0337 , H01L21/3065 , H01L21/3086 , H01L31/02363 , B81C2201/0132 , B81C2201/0149 , B82Y40/00 , H01J2237/334 , Y02E10/50
摘要： Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.
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公开(公告)号：US09221957B2
公开(公告)日：2015-12-29
申请号：US14576479
申请日：2014-12-19
发明人： Chang-Yong Nam , Jovan Kamcev , Charles T. Black , Robert Grubbs
CPC分类号： C08J7/123 , C08J2353/00 , G03F7/0002
摘要： Technologies are described for methods for producing a pattern of a material on a substrate. The methods may comprise receiving a patterned block copolymer on a substrate. The patterned block copolymer may include a first polymer block domain and a second polymer block domain. The method may comprise exposing the patterned block copolymer to a light effective to oxidize the first polymer block domain in the patterned block copolymer. The method may comprise applying a precursor to the block copolymer. The precursor may infuse into the oxidized first polymer block domain and generate the material. The method may comprise applying a removal agent to the block copolymer. The removal agent may be effective to remove the first polymer block domain and the second polymer block domain from the substrate, and may not be effective to remove the material in the oxidized first polymer block domain.
摘要翻译： 技术描述了用于在衬底上生产材料图案的方法。 所述方法可以包括在基材上接收图案化的嵌段共聚物。 图案化的嵌段共聚物可以包括第一聚合物嵌段结构域和第二聚合物嵌段结构域。 该方法可以包括将图案化的嵌段共聚物暴露于有效氧化图案化嵌段共聚物中第一聚合物嵌段结构域的光。 该方法可以包括将前体施加到嵌段共聚物上。 前体可以注入氧化的第一聚合物嵌段结构域并产生材料。 该方法可以包括将去除剂施加到嵌段共聚物上。 除去剂可能有效地从底物中除去第一聚合物嵌段结构域和第二聚合物嵌段结构域，并且可能不有效地除去氧化的第一聚合物嵌段结构域中的材料。
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8.发明申请Chemically Passivated Zinc Oxide Photoelectrode for Photoelectrochemical Water Splitting 审中-公开化学钝化氧化锌光电池用于光电化学水分离公开(公告)号：US20150122639A1
公开(公告)日：2015-05-07
申请号：US14529208
申请日：2014-10-31
发明人： Mingzhao Liu , Chang-Yong Nam , Charles T. Black
CPC分类号： C25B1/003 , C25B1/04 , C25B11/0478 , Y02E60/366 , Y02E70/10 , Y02P20/135
摘要： A chemically passivated photoelectrode, having a conductive substrate, a layer of conductive oxide, preferably zinc oxide (ZnO), over the conductive substrate, and an ultrathin layer of a chemically inert semiconductor material coating the conductive oxide layer, is disclosed. The ultrathin layer of chemically inert semiconductor material, which may be less than 5 nm thick, increases the efficiency of water splitting through passivation of surface charge traps and chemical stability in harsh environments, as opposed to being photoactive. A method of manufacture and a solar cell having the photoelectrode are also disclosed.
摘要翻译： 公开了一种化学钝化的光电极，其具有导电衬底，导电衬底上的导电氧化物层，优选氧化锌（ZnO）层，以及涂覆导电氧化物层的化学惰性半导体材料的超薄层。 化学惰性半导体材料的超薄层可以小于5nm厚，通过钝化表面电荷陷阱并在恶劣环境中的化学稳定性提高了水分解的效率，而不是光活性。 还公开了一种制造方法和具有光电极的太阳能电池。
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公开(公告)号：US20140096483A1
公开(公告)日：2014-04-10
申请号：US14045890
申请日：2013-10-04
IPC分类号： B65D6/00
CPC分类号： B65D7/12 , H01L21/67 , H01L21/67196
摘要： A transfer chamber is disclosed having a first plate with a first surface configured to receive a sample and a second surface containing a groove. The second surface of the first plate surrounds the first surface of the first plate. A second plate has a first surface and a second surface containing a groove. A sealing component is disposed in the groove of the first plate or the second plate. A pivotable link couples the first plate and the second plate. The pivotable link is configured to hold the first plate, the second plate, and the sealing component together to substantially create an air-tight seal between the first surface of the first plate and the second surface of the second plate. The pivotable link is configured to open the seal in response to a pressure differential across the transfer chamber.
摘要翻译： 公开了一种传送室，其具有第一板，第一板具有构造成容纳样品的第一表面和包含槽的第二表面。 第一板的第二表面围绕第一板的第一表面。 第二板具有第一表面和包含凹槽的第二表面。 密封部件设置在第一板或第二板的槽中。 可枢转连杆将第一板和第二板连接。 可枢转连杆构造成将第一板，第二板和密封部件保持在一起，以在第一板的第一表面和第二板的第二表面之间基本上形成气密密封。 可枢转连杆构造成响应于传送室上的压力差而打开密封件。
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公开(公告)号：US20160137799A1
公开(公告)日：2016-05-19
申请号：US14897441
申请日：2014-06-13
CPC分类号： H01L21/3086 , B81C1/00111 , B81C2201/0149 , G02B1/118 , G02B1/18 , G03F7/0002 , G03F7/405 , H01J2237/334 , H01L21/0271 , H01L21/0273 , H01L21/0337 , H01L21/3065
摘要： Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material. The methods may comprise applying a removal agent effective to remove the polymer block domains to the infiltrated block copolymer to generate a pattern of the material. The methods may comprise etching the substrate. The pattern of the material may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate. The methods may comprise removing the pattern of the material and coating the nanostructures and the surface of the substrate with a hydrophobic coating.
摘要翻译： 描述了用于蚀刻衬底中的纳米结构的方法和系统的技术。 所述方法可以包括在衬底上沉积图案化的嵌段共聚物。 该方法可以包括将前体施加到图案化的嵌段共聚物上以产生渗透的嵌段共聚物。 前体可能渗入第一聚合物嵌段结构域并产生一种材料。 所述方法可以包括将有效去除聚合物嵌段结构域的去除剂施加到渗透的嵌段共聚物以产生该材料的图案。 该方法可以包括蚀刻衬底。 材料的图案可以掩盖衬底以图案化蚀刻。 蚀刻可以在衬底中产生纳米结构的条件下进行。 该方法可以包括去除材料的图案并用疏水涂层涂覆纳米结构和基底的表面。
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