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    THIN-FILM PHOTOVOLTAIC DEVICE WITH OPTICAL FIELD CONFINEMENT AND METHOD FOR MAKING SAME
    1.
    发明申请
    THIN-FILM PHOTOVOLTAIC DEVICE WITH OPTICAL FIELD CONFINEMENT AND METHOD FOR MAKING SAME 审中-公开
    具有光场约束的薄膜光伏器件及其制造方法

    公开(公告)号：US20150122324A1

    公开(公告)日：2015-05-07

    申请号：US14399800

    申请日：2013-05-17

    申请人： Brookhaven Science Associates, LLC

    发明人： Matthew Eisaman ,  Yutong Pang ,  Nanditha Dissanayake

    IPC分类号： H01L51/44 ,  H01L51/00

    CPC分类号： H01L51/44 ,  H01L51/0037 ,  H01L51/0057 ,  H01L51/0068 ,  H01L51/4273 ,  H01L51/442 ,  H01L51/444 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

    摘要： A photovoltaic device is provided that includes a first electrode layer and a second electrode layer; and a waveguiding structure disposed between the first electrode layer and the second electrode layer which includes an active layer adapted to convert photons transmitted to the active layer to electrons and holes. The waveguiding structure further includes a first layer adjacent the first electrode layer that includes a hole-conducting material having a first index of refraction, and a second layer including an electron-conducting material having a second index of refraction, wherein the active layer is disposed therebetween. The active layer has an index of refraction that is less than each of the first index of refraction and the second index of refraction and a thickness. The waveguiding structure is characterized by guided modes adapted for optically confining the photons within the active layer.

    摘要翻译： 提供一种光电器件，其包括第一电极层和第二电极层; 以及布置在第一电极层和第二电极层之间的波导结构，其包括适于将透射到有源层的光子转换成电子和空穴的有源层。 所述波导结构还包括邻近所述第一电极层的第一层，所述第一层包括具有第一折射率的导电材料和包括具有第二折射率的电子传导材料的第二层，其中所述有源层设置 之间。 活性层的折射率小于第一折射率和第二折射率以及厚度的折射率。 波导结构的特征在于适于将光子限制在活性层内的引导模式。

    FORMATION OF ANTIREFLECTIVE SURFACES
    5.
    发明申请
    FORMATION OF ANTIREFLECTIVE SURFACES 有权

    公开(公告)号：US20220402754A1

    公开(公告)日：2022-12-22

    申请号：US17858855

    申请日：2022-07-06

    申请人： Brookhaven Science Associates LLC

    发明人： Charles T. Black ,  Atikur Rahman ,  Matthew Eisaman ,  Ahsan Ashraf

    IPC分类号： B81C1/00 ,  B82Y30/00 ,  H01L31/0236 ,  G02B1/118 ,  G03F7/00 ,  G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/308

    摘要： Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.

    Formation of Antireflective Surfaces
    6.
    发明申请
    Formation of Antireflective Surfaces 审中-公开
    形成抗反射表面

    公开(公告)号：US20160139302A1

    公开(公告)日：2016-05-19

    申请号：US14897481

    申请日：2014-06-13

    申请人： BROOKHAVEN SCIENCE ASSOCIATES LLC

    发明人： Charles T. Black ,  Atikur Rahman ,  Matthew Eisaman ,  Ahsan Ashraf

    IPC分类号： G02B1/118 ,  H01J37/32

    CPC分类号： H01L21/3086 ,  B81C2201/0149 ,  G02B1/118 ,  G03F7/0002 ,  G03F7/405 ,  H01J2237/334 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3065

    摘要： Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.

    摘要翻译： 描述了用于蚀刻衬底中的纳米结构的方法和系统的技术。 所述方法可以包括在衬底上沉积图案化的嵌段共聚物。 图案化的嵌段共聚物可包括第一和第二聚合物嵌段结构域。 该方法可以包括将前体施加到图案化的嵌段共聚物上以产生渗透的嵌段共聚物。 该前体可以渗入第一聚合物嵌段结构域并在第一聚合物嵌段结构域中产生一种材料。 所述方法可以包括将去除剂施加到渗透的嵌段共聚物以产生图案化材料。 去除剂可以有效地从基底去除第一和第二聚合物嵌段结构域。 该方法可以包括蚀刻衬底。 衬底上的图案化材料可以掩盖衬底以图案蚀刻。 蚀刻可以在衬底中产生纳米结构的条件下进行。

    Formation of antireflective surfaces
    7.
    发明授权
    Formation of antireflective surfaces 有权

    公开(公告)号：US10882739B2

    公开(公告)日：2021-01-05

    申请号：US16123083

    申请日：2018-09-06

    申请人： Brookhaven Science Associates LLC

    发明人： Charles T. Black ,  Atikur Rahman ,  Matthew Eisaman ,  Ahsan Ashraf

    IPC分类号： B81C1/00 ,  B82Y30/00 ,  H01L31/0236 ,  G02B1/118 ,  G03F7/00 ,  G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/308 ,  B82Y40/00

    摘要： Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.

    Formation of antireflective surfaces
    8.
    发明授权
    Formation of antireflective surfaces 有权

    公开(公告)号：US10290507B2

    公开(公告)日：2019-05-14

    申请号：US14897481

    申请日：2014-06-13

    申请人： Brookhaven Science Associates, LLC

    发明人： Charles T. Black ,  Atikur Rahman ,  Matthew Eisaman ,  Ahsan Ashraf

    IPC分类号： H01L21/308 ,  G02B1/118 ,  G03F7/40 ,  H01L21/033 ,  G03F7/00 ,  H01L21/027 ,  H01L21/3065

    摘要： Technologies are described for methods and systems effective for etching nanostructures in a substrate. The methods may comprise depositing a patterned block copolymer on the substrate. The patterned block copolymer may include first and second polymer block domains. The methods may comprise applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer. The precursor may infiltrate into the first polymer block domain and generate a material in the first polymer block domain. The methods may comprise applying a removal agent to the infiltrated block copolymer to generate a patterned material. The removal agent may be effective to remove the first and second polymer block domains from the substrate. The methods may comprise etching the substrate. The patterned material on the substrate may mask the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.