-
公开(公告)号:US20140270620A1
公开(公告)日:2014-09-18
申请号:US13828455
申请日:2013-03-14
Applicant: CISCO TECHNOLOGY, INC.
Inventor: Sean P. Anderson , Mark A. Webster
IPC: G02B6/27
CPC classification number: G02B6/27 , G02B6/126 , G02B6/2706 , G02B6/2766 , G02B6/2773
Abstract: An optical waveguide structure includes a rotator having a dual-layer core. A first layer of the dual-layer core may include a tapering portion. A second layer of the dual-layer core may include a rib portion disposed on the tapering portion. The combination of the rib portion and the tapering portion may receive a pair of optical signals, one being polarized in a TE mode and the other being polarized in a TM mode, and convert them to a pair of TE mode optical signals.
Abstract translation: 光波导结构包括具有双层芯的旋转器。 双层芯的第一层可以包括锥形部分。 双层芯的第二层可以包括设置在锥形部分上的肋部分。 肋部分和锥形部分的组合可以接收一对光信号,一个在TE模式下极化,另一个在TM模式下极化,并将它们转换成一对TE模式光信号。
-
公开(公告)号:US11675127B2
公开(公告)日:2023-06-13
申请号:US17305931
申请日:2021-07-16
Applicant: Cisco Technology, Inc.
Inventor: Sean P. Anderson , Vipulkumar Patel
IPC: G02B6/12 , G02B6/122 , H01L31/0232 , H01L31/105
CPC classification number: G02B6/12002 , G02B6/12004 , G02B6/1228 , H01L31/02327 , H01L31/105 , G02B2006/12123
Abstract: Embodiments herein describe optical interposers that utilize waveguides to detect light. For example, in one embodiment, an apparatus is provided that includes an optical detector having a first layer. The first layer includes at least one of polysilicon or amorphous silicon. The first layer forms a diode that includes a p-doped region and an n-doped region. The apparatus further includes a waveguide optically coupled to the diode and disposed on a different layer than the first layer.
-
公开(公告)号:US11183603B2
公开(公告)日:2021-11-23
申请号:US16550054
申请日:2019-08-23
Applicant: Cisco Technology, Inc.
Inventor: Igal I. Bayn , Sean P. Anderson
IPC: H01L31/0232 , H01L31/028 , H01L31/0352 , H01L31/02 , G01S7/4913 , H01L31/024 , H01L31/0224 , H01L31/103 , G02B6/42 , G02B6/12
Abstract: Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.
-
公开(公告)号:US10734785B2
公开(公告)日:2020-08-04
申请号:US15910684
申请日:2018-03-02
Applicant: Cisco Technology, Inc.
Inventor: Dominic F. Siriani , Sean P. Anderson , Vipulkumar Patel
IPC: H01S5/026 , H01S5/02 , H01S5/042 , H01S5/343 , H01S5/022 , H01L21/02 , H01S5/34 , H01S5/125 , H01S5/22 , H01S5/10
Abstract: An apparatus, comprising: a silicon substrate; and a quantum dot laser comprising: a base layer of a III-V semiconductor material, bonded with the silicon substrate; and at least one layer grown epitaxially from the base layer, wherein the at least one layer comprises a quantum dot layer. The apparatus further comprises a photonic element, fabricated on the silicon substrate and including a waveguide optically aligned with the quantum dot layer.
-
公开(公告)号:US10446699B2
公开(公告)日:2019-10-15
申请号:US15663556
申请日:2017-07-28
Applicant: Cisco Technology, Inc.
Inventor: Igal I. Bayn , Sean P. Anderson
IPC: H01L31/0232 , H01L31/028 , H01L31/0352 , H01L31/02 , G01S7/491 , G02B6/42 , H01L31/0224 , H01L31/024 , H01L31/103
Abstract: Embodiments herein describe photonic systems that include a germanium photodetector thermally coupled to a resistive element. Current flowing through the resistive element increases the temperature of the resistive element. Heat from the resistive element increases the temperature of the thermally coupled photodetector. Increasing the temperature of the photodetector increases the responsivity of the photodetector. The bias voltage of the photodetector can be increased to increase the bandwidth of the photodetector. In various embodiments, the photodetector includes at least one waveguide to receive light into the photodetector. Other embodiments include multiple resistive elements thermally coupled to the photodetector.
-
6.
公开(公告)号:US20190273364A1
公开(公告)日:2019-09-05
申请号:US15910345
申请日:2018-03-02
Applicant: Cisco Technology, Inc.
Inventor: Dominic F. Siriani , Sean P. Anderson , Vipulkumar Patel
Abstract: A wafer comprising: a silicon substrate; a base layer of a predetermined thickness of a III-V semiconductor material bonded with the silicon substrate; and at least one layer grown on the base layer to form a plurality of quantum dot lasers.
-
公开(公告)号:US09978890B1
公开(公告)日:2018-05-22
申请号:US15440209
申请日:2017-02-23
Applicant: Cisco Technology, Inc.
Inventor: Igal I. Bayn , Vipulkumar Patel , Sean P. Anderson , Prakash Gothoskar
IPC: H01L31/00 , H01L31/0232 , H01L31/105 , H01L31/0352 , G02B6/125 , G02B6/12
CPC classification number: G02B6/12 , G02B6/125 , G02B2006/12061 , H01L31/02327 , H01L31/028 , H01L31/105
Abstract: Embodiments herein describe a photonic device that includes a germanium photodetector coupled to multiple silicon waveguides. In one embodiment, the silicon waveguides optically couple to a layer of germanium material. In one embodiment, if the germanium material forms a polygon, then a respective silicon waveguide optically couple to each of the corners of the polygon. Each of the plurality of input silicon waveguides may be arranged to transmit light in a direction under the germanium that is offset relative to both sides of the germanium forming the respective corner. In another example, the germanium material may be a circle or ellipse in which case the silicon waveguides terminate at or close to a non-straight, curved surface of the germanium material. As described below, optically coupling the silicon waveguides at a non-straight surface can reduce the distance charge carriers have to travel in the optical detector which can improve bandwidth.
-
公开(公告)号:US20160170241A1
公开(公告)日:2016-06-16
申请号:US14569016
申请日:2014-12-12
Applicant: Cisco Technology, Inc.
Inventor: Donald Benjamin ADAMS , Sean P. Anderson , Mark Andrew Webster , Matthew Traverso
IPC: G02F1/025
CPC classification number: G02F1/025
Abstract: Embodiments presented in this disclosure generally relate to an electro-optic device that includes one or more modulator portions and a terminator portion. Each modulator portion is disposed along a propagation path of an optical signal and includes a respective first doped region and one or more coupled first electrical contacts. Each modulator portion operates to modulate an optical signal propagating through the first doped region using first electrical signals applied to the electrical contacts. The terminator portion is disposed along the propagation path and proximate to at least one modulator portions, and operates to mitigate effects of droop on the propagating optical signal.
Abstract translation: 在本公开中呈现的实施例通常涉及包括一个或多个调制器部分和终止器部分的电光装置。 每个调制器部分沿着光信号的传播路径设置,并且包括相应的第一掺杂区域和一个或多个耦合的第一电触头。 每个调制器部分操作以使用施加到电触点的第一电信号来调制通过第一掺杂区域传播的光信号。 终端器部分沿着传播路径设置并且靠近至少一个调制器部分,并且用于减轻下垂对传播光信号的影响。
-
公开(公告)号:US10686527B2
公开(公告)日:2020-06-16
申请号:US16700722
申请日:2019-12-02
Applicant: Cisco Technology, Inc.
Inventor: Sean P. Anderson , Mark A. Webster
Abstract: Improvements in extinguishing optical signals in silicon photonics may be achieved by supplying a test signal of a known characteristics to a Photonic Element (PE) to extinguish the test signal via a first phase shifter and intensity modulator on a first arm of the PE and a second phase shifter and intensity modulator on a second arm of the PE; sweeping through a plurality of voltages at the first intensity modulator to identify a first voltage that is associated with an extinction ratio at an output of the PE that satisfies an induced loss threshold and a second voltage that is associated with an induced loss in the test signal at the output of the PE that satisfies an extinction ratio threshold; and setting the PE to provide an operational voltage to the first intensity modulator based on the first voltage and the second voltage.
-
公开(公告)号:US10461495B2
公开(公告)日:2019-10-29
申请号:US15910852
申请日:2018-03-02
Applicant: Cisco Technology, Inc.
Inventor: Dominic F. Siriani , Sean P. Anderson , Vipulkumar Patel
Abstract: A method of creating a laser, comprising: bonding a III-V semiconductor material with a silicon substrate; removing excess III-V semiconductor material bonded with the substrate to leave a III-V semiconductor material base layer of a predetermined thickness bonded with the substrate; and after removing the excess III-V semiconductor material, epitaxially growing at least one layer on the III-V semiconductor material base layer, the at least one layer comprising a quantum dot layer.
-
-
-
-
-
-
-
-
-