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公开(公告)号：US10319806B2
公开(公告)日：2019-06-11
申请号：US15220869
申请日：2016-07-27
申请人： COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , STMICROELECTRONICS (CROLLES 2) SAS
IPC分类号： H01L27/108 , H01L49/02
摘要： The electrode for a structure of Metal-Insulator-Metal type is formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer.The electrically conducting oxide is advantageously a noble metal oxide, and preferentially ruthenium oxide.The electrode is arranged on a substrate. The gold layer of the electrode is separated from the substrate by an adhesion layer made from titanium dioxide.The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type.
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公开(公告)号：US09460923B2
公开(公告)日：2016-10-04
申请号：US14220406
申请日：2014-03-20
申请人： STMicroelectronics (Crolles 2) SAS , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
IPC分类号： H01L21/02 , H01L29/10 , H01L21/8238 , H01L21/84
CPC分类号： H01L21/02694 , H01L21/02002 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/823807 , H01L21/84 , H01L29/1054
摘要： The present disclosure concerns a method involving: forming a strained silicon germanium layer by epitaxial growth over a silicon layer disposed on a substrate; implanting atoms to amorphize the silicon layer and a lower portion of the silicon germanium layer, without amorphizing a surface portion of the silicon germanium layer; and annealing, to at least partially relax the silicon germanium layer and to re-crystallize the lower portion of the silicon germanium layer and the silicon layer, so that the silicon layer becomes a strained silicon layer.
摘要翻译： 本公开涉及一种方法，涉及：通过在布置在衬底上的硅层上外延生长来形成应变硅锗层; 注入原子以使硅层和硅锗层的下部非晶化，而不使硅锗层的表面部分非晶化; 并进行退火，以至少部分地使硅锗层松弛并使硅锗层和硅层的下部重新结晶，使得硅层变成应变硅层。
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公开(公告)号：US09356094B2
公开(公告)日：2016-05-31
申请号：US13907547
申请日：2013-05-31
发明人： Aomar Halimaoui , Daniel Bensahel
IPC分类号： H01L21/20 , H01L29/02 , H01L29/06 , H01L21/762 , H01L21/764 , H01L21/02
CPC分类号： H01L29/0649 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/76262 , H01L21/764
摘要： A method for making a silicon layer extending on an insulation layer, including the steps of forming a silicon-germanium layer on at least a portion of a silicon wafer; transforming portions of the silicon-germanium layer into porous silicon pads; growing a monocrystalline silicon layer on the silicon-germanium layer and on the porous silicon pads; removing the silicon-germanium layer; oxidizing the porous silicon pads; and depositing an insulation material on the silicon layer.
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公开(公告)号：US20140284769A1
公开(公告)日：2014-09-25
申请号：US14220406
申请日：2014-03-20
申请人： Commissariat à I'Énergie Atomique et aux Énergies Alternatives , STMicroelectronics (Crolles 2) SAS
IPC分类号： H01L21/02
CPC分类号： H01L21/02694 , H01L21/02002 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/823807 , H01L21/84 , H01L29/1054
摘要： The present disclosure concerns a method involving: forming a strained silicon germanium layer by epitaxial growth over a silicon layer disposed on a substrate; implanting atoms to amorphize the silicon layer and a lower portion of the silicon germanium layer, without amorphizing a surface portion of the silicon germanium layer; and annealing, to at least partially relax the silicon germanium layer and to re-crystallize the lower portion of the silicon germanium layer and the silicon layer, so that the silicon layer becomes a strained silicon layer.
摘要翻译： 本公开涉及一种方法，涉及：通过在布置在衬底上的硅层上外延生长来形成应变硅锗层; 注入原子以使硅层和硅锗层的下部非晶化，而不使硅锗层的表面部分非晶化; 并进行退火，以至少部分地使硅锗层松弛并使硅锗层和硅层的下部重新结晶，使得硅层变成应变硅层。
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公开(公告)号：US20180254414A1
公开(公告)日：2018-09-06
申请号：US15878036
申请日：2018-01-23
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , STMICROELECTRONICS (CROLLES 2) SAS
CPC分类号： H01L45/10 , G11C13/0007 , G11C13/0011 , G11C13/0069 , G11C2013/0078 , G11C2213/32 , G11C2213/52 , G11C2213/56 , H01L21/02258 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/1273 , H01L45/146 , H01L45/16 , H01L45/1641
摘要： The present invention relates to a memory device comprising a first electrode (27), a second electrode (28) and an active portion that can change conductive state, positioned between a first face of the first electrode (27) and a first face of the second electrode (28).The first electrode (27) comprises an upper portion forming the first face of the first electrode (27). At least one out of the upper portion and the active portion that can change conductive state comprises a porous layer (15).
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公开(公告)号：US09704709B2
公开(公告)日：2017-07-11
申请号：US15260767
申请日：2016-09-09
申请人： Commissariat a L'Energie Atomique et aux Energies Alternatives , STMicroelectronics (Crolles 2) SAS
IPC分类号： H01L21/02 , H01L21/265 , H01L21/266 , H01L29/10 , H01L21/8234 , H01L21/84 , H01L29/165 , H01L29/66
CPC分类号： H01L21/02694 , H01L21/0245 , H01L21/02532 , H01L21/02592 , H01L21/02667 , H01L21/26586 , H01L21/266 , H01L21/823412 , H01L21/84 , H01L29/1054 , H01L29/165 , H01L29/66568 , H01L29/66742 , H01L29/66772 , H01L29/7847 , H01L29/78654 , H01L29/78681 , H01L29/78687
摘要： A Method for producing a layer of strained semiconductor material, the method comprising steps for: a) formation on a substrate of a stack comprising a first semiconductor layer based on a first semiconductor material coated with a second semiconductor layer based on a second semiconductor material having a different lattice parameter to that of the first semiconductor material, b) producing on the second semiconductor layer a mask having a symmetry, c) rendering amorphous the first semiconductor layer along with zones of the second semiconductor layer without rendering amorphous one or a plurality of regions of the second semiconductor layer protected by the mask and arranged respectively opposite the masking block(s), d) performing recrystallization of the regions rendered amorphous and the first semiconductor layer resulting in this first semiconductor layer being strained (FIG. 1A).
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7.发明授权公开(公告)号：US09525067B2
公开(公告)日：2016-12-20
申请号：US14533770
申请日：2014-11-05
CPC分类号： H01L29/7849 , H01L21/187 , H01L21/3063 , H01L29/06 , H01L29/32 , H01L29/78
摘要： An electronic circuit on a strained semiconductor substrate, includes: electronic components on a first surface of a semiconductor substrate; and at least portions of a layer of a porous semiconductor material on the side of a second surface of the semiconductor substrate, opposite to the first surface, to bend the semiconductor substrate.
摘要翻译： 应变半导体衬底上的电子电路包括：半导体衬底的第一表面上的电子部件; 以及半导体衬底的与第一表面相对的一侧上的多孔半导体材料层的至少一部分，以使半导体衬底弯曲。
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公开(公告)号：US10651376B2
公开(公告)日：2020-05-12
申请号：US15878036
申请日：2018-01-23
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , STMICROELECTRONICS (CROLLES 2) SAS
摘要： The present invention relates to a memory device comprising a first electrode (27), a second electrode (28) and an active portion that can change conductive state, positioned between a first face of the first electrode (27) and a first face of the second electrode (28).The first electrode (27) comprises an upper portion forming the first face of the first electrode (27). At least one out of the upper portion and the active portion that can change conductive state comprises a porous layer (15).
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公开(公告)号：US20170076944A1
公开(公告)日：2017-03-16
申请号：US15260767
申请日：2016-09-09
申请人： Commissariat a L'Energie Atomique et aux Energies Alternatives , STMicroelectronics (Crolles 2) SAS
IPC分类号： H01L21/02 , H01L21/266 , H01L29/66 , H01L21/8234 , H01L21/84 , H01L29/165 , H01L21/265 , H01L29/10
CPC分类号： H01L21/02694 , H01L21/0245 , H01L21/02532 , H01L21/02592 , H01L21/02667 , H01L21/26586 , H01L21/266 , H01L21/823412 , H01L21/84 , H01L29/1054 , H01L29/165 , H01L29/66568 , H01L29/66742 , H01L29/66772 , H01L29/7847 , H01L29/78654 , H01L29/78681 , H01L29/78687
摘要： A Method for producing a layer of strained semiconductor material, the method comprising steps for: a) formation on a substrate of a stack comprising a first semiconductor layer based on a first semiconductor material coated with a second semiconductor layer based on a second semiconductor material having a different lattice parameter to that of the first semiconductor material, b) producing on the second semiconductor layer a mask having a symmetry, c) rendering amorphous the first semiconductor layer along with zones of the second semiconductor layer without rendering amorphous one or a plurality of regions of the second semiconductor layer protected by the mask and arranged respectively opposite the masking block(s) d) performing recrystallisation of the regions rendered amorphous and the first semiconductor layer resulting in this first semiconductor layer being strained (FIG. 1A).
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10.发明申请METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR SUBSTRATE 审中-公开在应变半导体衬底上形成集成电路的方法公开(公告)号：US20150054141A1
公开(公告)日：2015-02-26
申请号：US14533770
申请日：2014-11-05
IPC分类号： H01L29/78
CPC分类号： H01L29/7849 , H01L21/187 , H01L21/3063 , H01L29/06 , H01L29/32 , H01L29/78
摘要： An electronic circuit on a strained semiconductor substrate, includes: electronic components on a first surface of a semiconductor substrate; and at least portions of a layer of a porous semiconductor material on the side of a second surface of the semiconductor substrate, opposite to the first surface, to bend the semiconductor substrate.
摘要翻译： 应变半导体衬底上的电子电路包括：半导体衬底的第一表面上的电子部件; 以及半导体衬底的与第一表面相对的一侧上的多孔半导体材料层的至少一部分，以使半导体衬底弯曲。
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