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公开(公告)号：US20220291255A1
公开(公告)日：2022-09-15
申请号：US17829922
申请日：2022-06-01
申请人： Carl Zeiss SMT GmbH
IPC分类号： G01Q60/38 , H01J37/317 , H01J37/305 , G01Q70/08
摘要： The present invention relates to methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope. In particular, the invention relates to a method for hardening a measuring tip for a scanning probe microscope, comprising the step of: Processing the measuring tip with a beam of an energy beam source, the energy beam source being part of a scanning electron microscope.
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公开(公告)号：US20220107340A1
公开(公告)日：2022-04-07
申请号：US17551613
申请日：2021-12-15
申请人： Carl Zeiss SMT GmbH
发明人： Kinga Kornilov , Christof Baur , Markus Bauer
摘要： The present invention relates to a method for examining a measuring tip of a scanning probe microscope, wherein the method includes the following steps: (a) generating at least one test structure before a sample is analyzed, or after said sample has been analyzed, by the measuring tip; and (b) examining the measuring tip with the aid of the at least one generated test structure.
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公开(公告)号：US11353478B2
公开(公告)日：2022-06-07
申请号：US16423687
申请日：2019-05-28
申请人： Carl Zeiss SMT GmbH
IPC分类号： G01Q60/38 , G01Q70/08 , H01J37/305 , H01J37/317
摘要： The present invention relates to methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope. In particular, the invention relates to a method for hardening a measuring tip for a scanning probe microscope, comprising the step of: Processing the measuring tip with a beam of an energy beam source, the energy beam source being part of a scanning electron microscope.
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4.发明申请公开(公告)号：US20190317395A1
公开(公告)日：2019-10-17
申请号：US16452632
申请日：2019-06-26
申请人： Carl Zeiss SMT GmbH
发明人： Jens Oster , Kinga Kornilov , Tristan Bret , Horst Schneider , Thorsten Hofmann
IPC分类号： G03F1/72 , C23C14/28 , C23C14/04 , C23C16/16 , C23C16/18 , C23C14/30 , C23C16/48 , H01J37/30 , C23C16/56 , C23C16/40 , C23C16/04 , C23C14/22 , C23C14/08 , C23C14/10 , C23C14/54 , C23C14/58 , G03F1/26 , G03F1/74
摘要： The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.
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5.发明授权公开(公告)号：US10732501B2
公开(公告)日：2020-08-04
申请号：US16452632
申请日：2019-06-26
申请人： Carl Zeiss SMT GmbH
发明人： Jens Oster , Kinga Kornilov , Tristan Bret , Horst Schneider , Thorsten Hofmann
IPC分类号： G03F1/72 , G03F1/74 , H01J37/30 , H01J37/317 , C23C14/04 , C23C14/08 , C23C14/10 , C23C14/22 , C23C14/54 , C23C14/58 , C23C14/28 , C23C14/30 , C23C16/16 , C23C16/18 , C23C16/04 , C23C16/40 , C23C16/56 , C23C16/48 , G03F1/26
摘要： The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.
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6.发明授权公开(公告)号：US10372032B2
公开(公告)日：2019-08-06
申请号：US15441678
申请日：2017-02-24
申请人： Carl Zeiss SMT GmbH
发明人： Jens Oster , Kinga Kornilov , Tristan Bret , Horst Schneider , Thorsten Hofmann
IPC分类号： G03F1/72 , G03F1/74 , G03F1/26 , H01J37/30 , C23C14/04 , C23C14/08 , C23C14/10 , C23C14/54 , C23C14/28 , C23C14/30 , C23C16/04 , C23C16/16 , C23C16/18 , C23C16/40 , C23C16/48 , C23C14/22 , C23C14/58 , C23C16/56
摘要： The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.
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公开(公告)号：US11237187B2
公开(公告)日：2022-02-01
申请号：US16736360
申请日：2020-01-07
申请人： Carl Zeiss SMT GmbH
发明人： Kinga Kornilov , Christof Baur , Markus Bauer
摘要： The present invention relates to a method for examining a measuring tip of a scanning probe microscope, wherein the method includes the following steps: (a) generating at least one test structure before a sample is analyzed, or after said sample has been analyzed, by the measuring tip; and (b) examining the measuring tip with the aid of the at least one generated test structure.
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8.发明申请公开(公告)号：US20190317126A1
公开(公告)日：2019-10-17
申请号：US16423687
申请日：2019-05-28
申请人： Carl Zeiss SMT GmbH
IPC分类号： G01Q60/38 , G01Q70/08 , H01J37/305 , H01J37/317
摘要： The present invention relates to methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope. In particular, the invention relates to a method for hardening a measuring tip for a scanning probe microscope, comprising the step of: Processing the measuring tip with a beam of an energy beam source, the energy beam source being part of a scanning electron microscope.
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9.发明申请公开(公告)号：US20170248842A1
公开(公告)日：2017-08-31
申请号：US15441678
申请日：2017-02-24
申请人： Carl Zeiss SMT GmbH
发明人： Jens Oster , Kinga Kornilov , Tristan Bret , Horst Schneider , Thorsten Hofmann
CPC分类号： G03F1/72 , C23C14/048 , C23C14/083 , C23C14/085 , C23C14/10 , C23C14/221 , C23C14/28 , C23C14/30 , C23C14/548 , C23C14/5873 , C23C16/047 , C23C16/16 , C23C16/18 , C23C16/402 , C23C16/405 , C23C16/483 , C23C16/486 , C23C16/56 , G03F1/26 , G03F1/74 , H01J37/30
摘要： The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.
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