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    METHOD FOR PROTECTING A GATE STRUCTURE DURING CONTACT FORMATION
    6.
    发明申请
    METHOD FOR PROTECTING A GATE STRUCTURE DURING CONTACT FORMATION 有权
    在接触形成期间保护门结构的方法

    公开(公告)号：US20120228679A1

    公开(公告)日：2012-09-13

    申请号：US13475245

    申请日：2012-05-18

    申请人： Hong-Dyi Chang ,  Pei-Chao Su ,  Kong-Beng Thei ,  Hun-Jan Tao ,  Harry Hak-Lay Chuang

    发明人： Hong-Dyi Chang ,  Pei-Chao Su ,  Kong-Beng Thei ,  Hun-Jan Tao ,  Harry Hak-Lay Chuang

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/78 ,  H01L21/28247 ,  H01L21/823828 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Various methods for protecting a gate structure during contact formation are disclosed. An exemplary method includes: forming a gate structure over a substrate, wherein the gate structure includes a gate and the gate structure interposes a source region and a drain region disposed in the substrate; patterning a first etch stop layer such that the first etch stop layer is disposed on the source region and the drain region; patterning a second etch stop layer such that the second etch stop layer is disposed on the gate structure; and forming a source contact, a drain contact, and a gate contact, wherein the source contact and the drain contact extend through the first etch stop layer and the gate contact extends through the second etch stop layer, wherein the forming the source contact, the drain contact, and the gate contact includes simultaneously removing the first etch stop layer and the second etch stop layer to expose the gate, source region, and drain region.

    摘要翻译： 公开了在接触形成期间保护栅极结构的各种方法。 一种示例性方法包括：在衬底上形成栅极结构，其中栅极结构包括栅极，栅极结构插入设置在衬底中的源极区域和漏极区域; 图案化第一蚀刻停止层，使得第一蚀刻停止层设置在源极区域和漏极区域上; 图案化第二蚀刻停止层，使得第二蚀刻停止层设置在栅极结构上; 以及形成源极接触，漏极接触和栅极接触，其中所述源极接触和所述漏极接触延伸穿过所述第一蚀刻停止层，并且所述栅极接触延伸穿过所述第二蚀刻停止层，其中形成所述源极接触， 漏极接触，并且栅极接触包括同时移除第一蚀刻停止层和第二蚀刻停止层以暴露栅极，源极区域和漏极区域。

    Gate stack for high-K/metal gate last process
    8.
    发明授权
    Gate stack for high-K/metal gate last process 有权
    用于高K /金属门最后工艺的栅极堆叠

    公开(公告)号：US08476126B2

    公开(公告)日：2013-07-02

    申请号：US12702012

    申请日：2010-02-08

    申请人： Harry Hak-Lay Chuang ,  Kong-Beng Thei ,  Chiung-Han Yeh

    发明人： Harry Hak-Lay Chuang ,  Kong-Beng Thei ,  Chiung-Han Yeh

    IPC分类号： H01L21/338 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/283

    CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7833 ,  H01L29/7834

    摘要： A method for fabricating an integrated circuit device is disclosed. An exemplary method includes providing a substrate; forming a high-k dielectric layer over the substrate; forming a first capping layer over the high-k dielectric layer; forming a second capping layer over the first capping layer; forming a dummy gate layer over the second capping layer; performing a patterning process to form a gate stack including the high-k dielectric layer, first and second capping layers, and dummy gate layer; removing the dummy gate layer from the gate stack, thereby forming an opening that exposes the second capping layer; and filling the opening with a first metal layer over the exposed second capping layer and a second metal layer over the first metal layer, wherein the first metal layer is different from the second metal layer and has a work function suitable to the semiconductor device.

    摘要翻译： 公开了一种用于制造集成电路器件的方法。 一种示例性方法包括提供基底; 在衬底上形成高k电介质层; 在所述高k电介质层上形成第一覆盖层; 在所述第一覆盖层上形成第二覆盖层; 在所述第二封盖层上形成虚拟栅极层; 执行图案化处理以形成包括高k电介质层，第一和第二封盖层以及虚拟栅极层的栅极堆叠; 从所述栅极堆叠中去除所述伪栅极层，从而形成暴露所述第二封盖层的开口; 以及在所述暴露的第二覆盖层上方的第一金属层和所述第一金属层上的第二金属层填充所述开口，其中所述第一金属层与所述第二金属层不同，并且具有适合于所述半导体器件的功函数。

    METHOD FOR PROTECTING A GATE STRUCTURE DURING CONTACT FORMATION
    9.
    发明申请
    METHOD FOR PROTECTING A GATE STRUCTURE DURING CONTACT FORMATION 有权
    在接触形成期间保护门结构的方法

    公开(公告)号：US20100270627A1

    公开(公告)日：2010-10-28

    申请号：US12428011

    申请日：2009-04-22

    申请人： Hong-Dyi Chang ,  Pei-Chao Su ,  Kong-Beng Thei ,  Hun-Jan Tao ,  Harry Hak-Lay Chuang

    发明人： Hong-Dyi Chang ,  Pei-Chao Su ,  Kong-Beng Thei ,  Hun-Jan Tao ,  Harry Hak-Lay Chuang

    IPC分类号： H01L29/78 ,  H01L21/28

    CPC分类号： H01L29/78 ,  H01L21/28247 ,  H01L21/823828 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for fabricating a semiconductor device is disclosed. The method includes providing a substrate; forming at least one gate structure over the substrate; forming a plurality of doped regions in the substrate; forming an etch stop layer over the substrate; removing a first portion of the etch stop layer, wherein a second portion of the etch stop layer remains over the plurality of doped regions; forming a hard mask layer over the substrate; removing a first portion of the hard mask layer, wherein a second portion of the hard mask layer remains over the at least one gate structure; and forming a first contact through the second portion of the hard mask layer to the at least one gate structure, and a second contact through the second portion of the etch stop layer to the plurality of doped regions.

    摘要翻译： 公开了一种制造半导体器件的方法。 该方法包括提供基板; 在所述衬底上形成至少一个栅极结构; 在所述衬底中形成多个掺杂区域; 在衬底上形成蚀刻停止层; 去除所述蚀刻停止层的第一部分，其中所述蚀刻停止层的第二部分保留在所述多个掺杂区域上; 在衬底上形成硬掩模层; 去除所述硬掩模层的第一部分，其中所述硬掩模层的第二部分保留在所述至少一个栅极结构上; 以及通过所述硬掩模层的所述第二部分形成到所述至少一个栅极结构的第一接触，以及通过所述蚀刻停止层的所述第二部分到所述多个掺杂区域的第二接触。

    Method for protecting a gate structure during contact formation
    10.
    发明授权
    Method for protecting a gate structure during contact formation 有权
    在接触形成期间保护栅极结构的方法

    公开(公告)号：US08497169B2

    公开(公告)日：2013-07-30

    申请号：US13475245

    申请日：2012-05-18

    申请人： Hong-Dyi Chang ,  Pei-Chao Su ,  Kong-Beng Thei ,  Hun-Jan Tao ,  Harry Hak-Lay Chuang

    发明人： Hong-Dyi Chang ,  Pei-Chao Su ,  Kong-Beng Thei ,  Hun-Jan Tao ,  Harry Hak-Lay Chuang

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/78 ,  H01L21/28247 ,  H01L21/823828 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Various methods for protecting a gate structure during contact formation are disclosed. An exemplary method includes: forming a gate structure over a substrate, wherein the gate structure includes a gate and the gate structure interposes a source region and a drain region disposed in the substrate; patterning a first etch stop layer such that the first etch stop layer is disposed on the source region and the drain region; patterning a second etch stop layer such that the second etch stop layer is disposed on the gate structure; and forming a source contact, a drain contact, and a gate contact, wherein the source contact and the drain contact extend through the first etch stop layer and the gate contact extends through the second etch stop layer, wherein the forming the source contact, the drain contact, and the gate contact includes simultaneously removing the first etch stop layer and the second etch stop layer to expose the gate, source region, and drain region.

    摘要翻译： 公开了在接触形成期间保护栅极结构的各种方法。 一种示例性方法包括：在衬底上形成栅极结构，其中栅极结构包括栅极，栅极结构插入设置在衬底中的源极区域和漏极区域; 图案化第一蚀刻停止层，使得第一蚀刻停止层设置在源极区域和漏极区域上; 图案化第二蚀刻停止层，使得第二蚀刻停止层设置在栅极结构上; 以及形成源极接触，漏极接触和栅极接触，其中所述源极接触和所述漏极接触延伸穿过所述第一蚀刻停止层，并且所述栅极接触延伸穿过所述第二蚀刻停止层，其中形成所述源极接触， 漏极接触，并且栅极接触包括同时移除第一蚀刻停止层和第二蚀刻停止层以暴露栅极，源极区域和漏极区域。