公开(公告)号：US06838293B2

公开(公告)日：2005-01-04

申请号：US10439774

申请日：2003-05-16

申请人： Cem Basceri ,  Dan Gealy ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Dan Gealy ,  Gurtej S. Sandhu

IPC分类号： C23C16/40 ,  C23C16/52 ,  H01L21/314 ,  H01L21/316 ,  H01L21/00

CPC分类号： H01L21/02271 ,  C23C16/409 ,  C23C16/52 ,  H01L21/02197 ,  H01L21/31691

摘要： A method for controlling stoichiometry of dielectric films, e.g., BST films, preferably formed at low deposition temperatures. A deposition process may use an adjustment in oxidizer flow and/or partial pressure, the provision of a hydrogen-containing component, an adjustment in hydrogen-containing component flow and/or partial pressure, an adjustment in deposition pressure, and/or a modification of system component parameters (e.g., heating a shower head or adjusting a distance between a shower head of the deposition system and a wafer upon which the film is to be deposited), to control the characteristics of the dielectric film, e.g., film stoichiometry.

摘要翻译： 用于控制电介质膜的化学计量的方法，例如BST膜，优选在低沉积温度下形成。 沉积过程可以使用氧化剂流和/或分压的调节，含氢组分的提供，含氢组分流和/或分压的调节，沉积压力的调节和/或修饰 的系统组件参数（例如，加热淋浴喷头或调整沉积系统的淋浴头与待沉积膜的晶片之间的距离），以控制电介质膜的特性，例如膜化学计量。

公开(公告)号：US06962824B2

公开(公告)日：2005-11-08

申请号：US10925560

申请日：2004-08-25

申请人： Cem Basceri ,  Dan Gealy ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Dan Gealy ,  Gurtej S. Sandhu

IPC分类号： C23C16/40 ,  C23C16/52 ,  H01L21/314 ,  H01L21/316 ,  H01L21/00

CPC分类号： H01L21/02271 ,  C23C16/409 ,  C23C16/52 ,  H01L21/02197 ,  H01L21/31691

摘要： A method for controlling stoichiometry of dielectric films, e.g., BST films, preferably formed at low deposition temperatures. A deposition process may use an adjustment in oxidizer flow and/or partial pressure, the provision of a hydrogen-containing component, an adjustment in hydrogen-containing component flow and/or partial pressure, an adjustment in deposition pressure, and/or a modification of system component parameters (e.g., heating a shower head or adjusting a distance between a shower head of the deposition system and a wafer upon which the film is to be deposited), to control the characteristics of the dielectric film, e.g., film stoichiometry.

公开(公告)号：US06566147B2

公开(公告)日：2003-05-20

申请号：US09776217

申请日：2001-02-02

申请人： Cem Basceri ,  Dan Gealy ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Dan Gealy ,  Gurtej S. Sandhu

IPC分类号： H01L2100

CPC分类号： H01L21/02271 ,  C23C16/409 ,  C23C16/52 ,  H01L21/02197 ,  H01L21/31691

摘要： A method for controlling stoichiometry of dielectric films, e.g., BST films, preferably formed at low deposition temperatures. A deposition process may use an adjustment in oxidizer flow and/or partial pressure, the provision of a hydrogen-containing component, an adjustment in hydrogen-containing component flow and/or partial pressure, an adjustment in deposition pressure, and/or a modification of system component parameters (e.g., heating a shower head or adjusting a distance between a shower head of the deposition system and a wafer upon which the film is to be deposited), to control the characteristics of the dielectric film, e.g., film stoichiometry.

公开(公告)号：US08786005B2

公开(公告)日：2014-07-22

申请号：US13554577

申请日：2012-07-20

申请人： Cem Basceri ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： H01L29/792

CPC分类号： G11C11/5671 ,  G11C8/12 ,  G11C16/0416 ,  G11C16/0466 ,  H01L29/513 ,  H01L29/792

摘要： One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control and variation of threshold voltages of the transistor. Various threshold voltages may be assigned a data value, providing the ability to store one or more bits of data in a single memory cell. To control the threshold voltage, the oxygen vacancies may be manipulated by trapping electrons within the vacancies, freeing trapped electrons from the vacancies, moving the vacancies within the trapping layer and annihilating the vacancies.

摘要翻译： 单晶体管存储器件通过操纵场效应晶体管（FET）的俘获层内的氧空位来促进非易失性数据存储，从而提供晶体管的阈值电压的控制和变化。 可以为各种阈值电压分配数据值，提供将一个或多个位数据存储在单个存储器单元中的能力。 为了控制阈值电压，可以通过在空位内捕获电子来操纵氧空位，从空位释放被俘获的电子，移动捕获层内的空位并湮灭空位。

公开(公告)号：US08409933B2

公开(公告)日：2013-04-02

申请号：US13302231

申请日：2011-11-22

申请人： Cem Basceri ,  Gurtej S. Sandhu ,  H. Montgomery Manning

发明人： Cem Basceri ,  Gurtej S. Sandhu ,  H. Montgomery Manning

IPC分类号： H01L21/82 ,  H01L21/338 ,  H01L21/326

CPC分类号： H01L21/76823 ,  H01L21/28512 ,  H01L21/76895 ,  Y10T428/12542

摘要： The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of forming a conductive contact to a source/drain region of a field effect transistor includes providing gate dielectric material intermediate a transistor gate and a channel region of a field effect transistor. At least some of the gate dielectric material extends to be received over at least one source/drain region of the field effect transistor. The gate dielectric material received over the one source/drain region is exposed to conditions effective to change it from being electrically insulative to being electrically conductive and in conductive contact with the one source/drain region. Other aspects and implementations are contemplated.

公开(公告)号：US20120280306A1

公开(公告)日：2012-11-08

申请号：US13554577

申请日：2012-07-20

申请人： Cem Basceri ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： H01L29/792

CPC分类号： G11C11/5671 ,  G11C8/12 ,  G11C16/0416 ,  G11C16/0466 ,  H01L29/513 ,  H01L29/792

摘要： One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control and variation of threshold voltages of the transistor. Various threshold voltages may be assigned a data value, providing the ability to store one or more bits of data in a single memory cell. To control the threshold voltage, the oxygen vacancies may be manipulated by trapping electrons within the vacancies, freeing trapped electrons from the vacancies, moving the vacancies within the trapping layer and annihilating the vacancies.

摘要翻译： 单晶体管存储器件通过操纵场效应晶体管（FET）的俘获层内的氧空位来促进非易失性数据存储，从而提供晶体管的阈值电压的控制和变化。 可以为各种阈值电压分配数据值，提供将一个或多个位数据存储在单个存储器单元中的能力。 为了控制阈值电压，可以通过在空位内捕获电子来操纵氧空位，从空位释放被俘获的电子，移动捕获层内的空位并湮灭空位。

公开(公告)号：US07767525B2

公开(公告)日：2010-08-03

申请号：US11486524

申请日：2006-07-13

申请人： H. Montgomery Manning ,  Kunal R. Parekh ,  Cem Basceri ,  Gurtej S. Sandhu

发明人： H. Montgomery Manning ,  Kunal R. Parekh ,  Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： H01L21/336

CPC分类号： H01L29/66787 ,  H01L27/10808 ,  H01L27/10876

摘要： The invention includes methods in which an angled implant is utilized to self-align a source/drain region implant with the top edge of a gateline of a vertical transistor structure. The invention also includes methods in which an angled implant is utilized to implant dopant beneath the gateline of a vertical transistor structure. Vertical transistor structures formed in accordance with methodology of the present invention can be incorporated into various types of integrated circuitry, including, for example, DRAM arrays.

公开(公告)号：US20100091574A1

公开(公告)日：2010-04-15

申请号：US12637989

申请日：2009-12-15

申请人： Cem Basceri ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： G11C16/04 ,  H01L29/792 ,  H01L21/326

CPC分类号： G11C11/5671 ,  G11C8/12 ,  G11C16/0416 ,  G11C16/0466 ,  H01L29/513 ,  H01L29/792

摘要： One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control and variation of threshold voltages of the transistor. Various threshold voltages may be assigned a data value, providing the ability to store one or more bits of data in a single memory cell. To control the threshold voltage, the oxygen vacancies may be manipulated by trapping electrons within the vacancies, freeing trapped electrons from the vacancies, moving the vacancies within the trapping layer and annihilating the vacancies.

摘要翻译： 单晶体管存储器件通过操纵场效应晶体管（FET）的俘获层内的氧空位来促进非易失性数据存储，从而提供晶体管的阈值电压的控制和变化。 可以为各种阈值电压分配数据值，提供将一个或多个位数据存储在单个存储器单元中的能力。 为了控制阈值电压，可以通过在空位内捕获电子来操纵氧空位，从空位释放被俘获的电子，移动捕获层内的空位并湮灭空位。

公开(公告)号：US07687358B2

公开(公告)日：2010-03-30

申请号：US11171873

申请日：2005-06-30

申请人： Cem Basceri ,  H. Montgomery Manning ,  Gurtej S. Sandhu ,  Kunal R. Parekh

发明人： Cem Basceri ,  H. Montgomery Manning ,  Gurtej S. Sandhu ,  Kunal R. Parekh

IPC分类号： H01L21/336

CPC分类号： H01L29/4983 ,  H01L21/28194 ,  H01L29/512 ,  H01L29/517

摘要： This invention includes gated field effect devices, and methods of forming gated field effect devices. In one implementation, a gated field effect device includes a pair of source/drain regions having a channel region therebetween. A gate is received proximate the channel region between the source/drain regions. The gate has a gate width between the source/drain regions. A gate dielectric is received intermediate the channel region and the gate. The gate dielectric has at least two different regions along the width of the gate. The different regions are characterized by different materials which are effective to define the two different regions to have different dielectric constants k. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括门控场效应器件，以及形成门控场效应器件的方法。 在一种实施方案中，门控场效应器件包括在其间具有沟道区的一对源/漏区。 在源极/漏极区域之间的沟道区域附近接收栅极。 栅极在源极/漏极区之间具有栅极宽度。 栅极电介质被接收在沟道区域和栅极之间。 栅极电介质沿着栅极的宽度具有至少两个不同的区域。 不同的区域由不同的材料表征，其有效地限定两个不同的区域以具有不同的介电常数k。 考虑了其他方面和实现。

公开(公告)号：US07531395B2

公开(公告)日：2009-05-12

申请号：US11035298

申请日：2005-01-12

申请人： Eric R. Blomiley ,  Gurtej S. Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

发明人： Eric R. Blomiley ,  Gurtej S. Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

IPC分类号： H01L21/84 ,  H01L21/8238 ,  H01L21/336

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02642

摘要： Methods of forming layers comprising epitaxial silicon, and methods of forming field effect transistors are disclosed. A method of forming a layer comprising epitaxial silicon includes etching an opening into a silicate glass-comprising material received over a monocrystalline material. The etching is conducted to the monocrystalline material effective to expose the monocrystalline material at a base of the opening. A silicon-comprising layer is epitaxially grown within the opening from the monocrystalline material exposed at the base of the opening. The silicate glass-comprising material is etched from the substrate effective to leave a free-standing projection of the epitaxially grown silicon-comprising layer projecting from the monocrystalline material which was at the base of the opening. Other implementations and aspects are contemplated.

摘要翻译： 公开了形成包含外延硅的层的方法和形成场效应晶体管的方法。 形成包含外延硅的层的方法包括将开口蚀刻成通过单晶材料接收的含硅玻璃的材料。 对单晶材料进行蚀刻，以有效地在开口的基部暴露单晶材料。 在开口内从暴露在开口底部的单晶材料外延生长含硅层。 从衬底上蚀刻含硅玻璃的材料有效地留下从开口底部的单晶材料突出的外延生长的含硅层的独立投影。 考虑其他实现和方面。