公开(公告)号：US07749326B2

公开(公告)日：2010-07-06

申请号：US12177037

申请日：2008-07-21

申请人： Chang Sung Sean Kim ,  Jong Pa Hong ,  Joong El Ghim

发明人： Chang Sung Sean Kim ,  Jong Pa Hong ,  Joong El Ghim

IPC分类号： C23C16/455 ,  C23C16/458 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45508 ,  C23C16/45512 ,  C23C16/45589

摘要： Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.

摘要翻译： 提供了一种包括反应室的化学气相沉积设备; 设置在所述反应室中并具有安装在其上的多个晶片的感受体; 旋转所述基座的旋转驱动单元; 设置在反应室中的气体入口，并将反应气体从反应室的外部引入到反应室中; 设置在反应室中的气体出口，其从反应室内部沿着基座的旋转轴方向排出反应结束的反应气体; 以及可变气体流量调节单元，其设置在气体入口和气体出口之间，并且通过叠加多个具有多个孔的气体喷射板而形成。

公开(公告)号：US20090288604A1

公开(公告)日：2009-11-26

申请号：US12177037

申请日：2008-07-21

申请人： Changsung Sean Kim ,  Jong Pa Hong ,  Joong El Ghim

发明人： Changsung Sean Kim ,  Jong Pa Hong ,  Joong El Ghim

IPC分类号： C23C16/455 ,  C23C16/00 ,  C23C16/458

CPC分类号： C23C16/45508 ,  C23C16/45512 ,  C23C16/45589

摘要： Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.

摘要翻译： 提供了一种包括反应室的化学气相沉积设备; 设置在所述反应室中并具有安装在其上的多个晶片的感受体; 旋转所述基座的旋转驱动单元; 设置在反应室中的气体入口，并将反应气体从反应室的外部引入到反应室中; 设置在反应室中的气体出口，其从反应室内部沿着基座的旋转轴方向排出反应结束的反应气体; 以及可变气体流量调节单元，其设置在气体入口和气体出口之间，并且通过叠加多个具有多个孔的气体喷射板而形成。

公开(公告)号：US20090178615A1

公开(公告)日：2009-07-16

申请号：US12196453

申请日：2008-08-22

申请人： Changsung Sean KIM ,  Chang Hwan Choi ,  Jong Pa Hong

发明人： Changsung Sean KIM ,  Chang Hwan Choi ,  Jong Pa Hong

IPC分类号： C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45565 ,  C23C16/45576

摘要： There is provided a showerhead including: a first head having at least one gas conduit provided therein to allow a first reaction gas to be supplied into a reaction chamber; a second head having a hole of a predetermined size formed to have the gas conduit extending therethrough; and a gas flow path formed between the gas conduit extending through the hole and the hole to allow a second reaction gas to be supplied into the reaction chamber.

摘要翻译： 提供了一种淋浴头，其包括：第一头部，其具有设置在其中的至少一个气体导管，以允许将第一反应气体供应到反应室中; 具有预定尺寸的孔的第二头部形成为使气体导管延伸穿过其中; 以及形成在延伸穿过孔的气体管道和孔之间的气体流路，以允许将第二反应气体供应到反应室中。

公开(公告)号：US20100024727A1

公开(公告)日：2010-02-04

申请号：US12407347

申请日：2009-03-19

申请人： Changsung Sean Kim ,  Young Sun Won ,  Jong Pa Hong ,  Yong Il Kwon ,  Ji Hye Shim

发明人： Changsung Sean Kim ,  Young Sun Won ,  Jong Pa Hong ,  Yong Il Kwon ,  Ji Hye Shim

IPC分类号： C23C16/44

CPC分类号： C23C16/45502 ,  C23C16/45565

摘要： Provided is a showerhead that can inject a reaction gas into a reaction chamber in a manner such that the injected reaction gas form a spiral vortex flow field. Therefore, the injected reaction gas can be mixed within a shorter distance, and thus the effective deposition radius of a wafer can be increased so that uniform-density deposition can be performed on the entire surface of the wafer using the mixed reaction gas.

摘要翻译： 提供一种喷射器，其能够以使得注入的反应气体形成螺旋涡流场的方式将反应气体注入反应室。 因此，注入的反应气体可以在更短的距离内混合，从而可以提高晶片的有效沉积半径，从而可以使用混合反应气体在晶片的整个表面上进行均匀的浓度沉积。

公开(公告)号：US20090260569A1

公开(公告)日：2009-10-22

申请号：US12257131

申请日：2008-10-23

申请人： Changsung Sean KIM ,  Chang Hwan Choi ,  Jong Pa Hong ,  Joong El Kim

发明人： Changsung Sean KIM ,  Chang Hwan Choi ,  Jong Pa Hong ,  Joong El Kim

IPC分类号： C23C16/455

CPC分类号： C23C16/45591 ,  C23C16/45508 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/45585

摘要： There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas.

摘要翻译： 提供一种结构改进的化学气相沉积装置，使得引入到进行沉积的反应器中的反应气体以大致均匀的速率流动，以确保薄膜基本上均匀地生长在沉积物体上。 化学气相沉积装置包括：室; 设置在所述室中以使沉积物体沉积在其中的反应器; 以及储存器，储存从外部供给的反应气体，以将反应气体引入反应器，所述储存器具有根据引入的反应气体的流动路径而变化的横截面积。

公开(公告)号：US08809901B2

公开(公告)日：2014-08-19

申请号：US12750195

申请日：2010-03-30

申请人： Won Ha Moon ,  Dong Woohn Kim ,  Jong Pa Hong

发明人： Won Ha Moon ,  Dong Woohn Kim ,  Jong Pa Hong

IPC分类号： H01L33/32

CPC分类号： H05B33/145 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/18 ,  Y10S977/764 ,  Y10S977/816 ,  Y10S977/90 ,  Y10S977/95

摘要： The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.

摘要翻译： 本发明提供一种纳米线发光器件及其制造方法。 在发光器件中，形成第一和第二导电型覆盖层，并且其间插入有源层。 第一和第二导电型覆盖层和有源层中的至少一个是通过制备由半导体纳米线和有机粘合剂构成的混合物层并从其中除去有机粘合剂而获得的半导体纳米线层。

公开(公告)号：US20090260572A1

公开(公告)日：2009-10-22

申请号：US12263781

申请日：2008-11-03

申请人： Changsung Sean Kim ,  Sang Duk Yoo ,  Jong Pa Hong ,  Won Shin Lee

发明人： Changsung Sean Kim ,  Sang Duk Yoo ,  Jong Pa Hong ,  Won Shin Lee

IPC分类号： C23C16/455 ,  C23C16/458

CPC分类号： C23C16/45508 ,  C23C16/45574

摘要： There is provided a chemical vapor deposition apparatus including: a chamber including a reactor where a deposition object is deposited; a first supplier including a plurality of gas pipes allowing a first gas to be jetted into the reactor in a substantially horizontal direction; a second supplier including a plurality of holes of a predetermined size having the gas pipes inserted therein, respectively; a supply flow path formed between each of the gas pipes and each of the holes, the supply flow path allowing a second gas to be supplied into the reactor in a substantially horizontal direction.

摘要翻译： 提供了一种化学气相沉积设备，其包括：包括沉积物体的反应器的室; 第一供应商包括允许第一气体在大致水平方向上喷射到反应器中的多个气体管道; 第二供应商包括分别插入有气体管的预定尺寸的多个孔; 在每个气体管道和每个孔之间形成的供应流动路径，供应流动路径允许第二气体沿大致水平的方向供应到反应器中。

公开(公告)号：US08308865B2

公开(公告)日：2012-11-13

申请号：US12248367

申请日：2008-10-09

申请人： Changsung Sean Kim ,  Jong Pa Hong ,  Kyung Ho Lee

发明人： Changsung Sean Kim ,  Jong Pa Hong ,  Kyung Ho Lee

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45514 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574

摘要： A showerhead for chemical vapor deposition (CVD) includes a head storing reaction gas flowing thereinto and feeding the stored reaction gas to a reaction chamber, and at least one support member passing through and coupled with the head and the reaction chamber so as to support the head.

摘要翻译： 用于化学气相沉积（CVD）的喷头包括头部，其存储反应气体，并将储存的反应气体输送到反应室;以及至少一个支撑构件，其通过并与头部和反应室结合，以支撑 头。

公开(公告)号：US08298338B2

公开(公告)日：2012-10-30

申请号：US12259709

申请日：2008-10-28

申请人： Changsung Sean Kim ,  Sang Duk Yoo ,  Jong Pa Hong ,  Ji Hye Shim ,  Won Shin Lee

发明人： Changsung Sean Kim ,  Sang Duk Yoo ,  Jong Pa Hong ,  Ji Hye Shim ,  Won Shin Lee

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45508 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/45582 ,  C23C16/45591 ,  C23C16/4584

摘要： Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.

摘要翻译： 提供了一种化学气相沉积设备。 该装置包括反应室，气体引入单元和排气单元。 反应室包括其上装载有晶片的基座和通过化学气相沉积处理晶片的反应炉。 气体引入单元设置在反应室的外壁处，以将反应气体从反应炉的外部供应到反应炉的中心部分。 在反应气体用于反应炉中的反应之后，排气单元设置在反应室的中心部分，以将反应气体排出到反应室的上部或下部。 因此，即使当生长高温沉积层的工艺压力增加时，室内的气体密度也可以保持在基本均匀的状态。

公开(公告)号：US08277561B2

公开(公告)日：2012-10-02

申请号：US12257131

申请日：2008-10-23

申请人： Changsung Sean Kim ,  Chang Hwan Choi ,  Jong Pa Hong ,  Joong El Kim

发明人： Changsung Sean Kim ,  Chang Hwan Choi ,  Jong Pa Hong ,  Joong El Kim

IPC分类号： C23C16/455 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45591 ,  C23C16/45508 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/45585

摘要： There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas.

摘要翻译： 提供一种结构改进的化学气相沉积装置，使得引入到进行沉积的反应器中的反应气体以大致均匀的速率流动，以确保薄膜基本上均匀地生长在沉积物体上。 化学气相沉积装置包括：室; 设置在所述室中以使沉积物体沉积在其中的反应器; 以及储存器，储存从外部供给的反应气体，以将反应气体引入反应器，所述储存器具有根据引入的反应气体的流动路径而变化的横截面积。