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    Semiconductor memory device and method of fabricating the same
    8.
    发明授权
    Semiconductor memory device and method of fabricating the same 有权
    半导体存储器件及其制造方法

    公开(公告)号：US09530789B2

    公开(公告)日：2016-12-27

    申请号：US14701985

    申请日：2015-05-01

    申请人： Joonhee Lee ,  Jintaek Park

    发明人： Joonhee Lee ,  Jintaek Park

    IPC分类号： H01L27/115 ,  H01L29/792 ,  H01L29/423 ,  H01L29/66

    CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/7926

    摘要： Semiconductor memory devices and methods of fabricating the same are provided. A semiconductor memory device includes stack gate structures that are spaced apart from each other in a first direction horizontal to a substrate. Each of the stack gate structures includes insulating layers and gate electrodes alternately and repeatedly stacked on the substrate. Vertical channel structures penetrate the stack gate structures. A source plug line is provided between the stack gate structures. The source plug line is in contact with the substrate and extends in a second direction intersecting the first direction. The substrate being in contact with the source plug line includes a plurality of protruding regions formed along the second direction. Each of the protruding regions has a first width, and the protruding regions are spaced apart from each other by a first distance greater than the first width.

    摘要翻译： 提供半导体存储器件及其制造方法。 一种半导体存储器件包括在与衬底水平的第一方向上彼此间隔开的堆叠栅极结构。 堆叠栅极结构中的每一个包括绝缘层和栅极电极交替地且重复堆叠在基板上。 垂直通道结构穿透堆叠门结构。 在堆叠门结构之间提供源插头线。 源插头线与衬底接触并沿与第一方向相交的第二方向延伸。 与源插头线接触的衬底包括沿着第二方向形成的多个突起区域。 每个突出区域具有第一宽度，并且突出区域彼此间隔开大于第一宽度的第一距离。