公开(公告)号：US10032791B2

公开(公告)日：2018-07-24

申请号：US15403779

申请日：2017-01-11

申请人： Chang-Sup Lee ,  Sung-Hun Lee ,  Joonhee Lee ,  Seong Soon Cho

发明人： Chang-Sup Lee ,  Sung-Hun Lee ,  Joonhee Lee ,  Seong Soon Cho

IPC分类号： H01L23/522 ,  H01L23/528 ,  H01L27/11582 ,  H01L23/535 ,  H01L27/11556 ,  H01L29/423

CPC分类号： H01L27/11582 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L29/42328 ,  H01L29/42344

摘要： A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region and an electrode structure including first and second electrodes alternatingly and vertically stacked on the substrate and having a stair-step structure on the connection region. Each of the first and second electrodes may include electrode portions provided on the cell array region to extend in a first direction and to be spaced apart from each other in a second direction perpendicular to the first direction, an electrode connecting portion provided on the connection region to extend in the second direction and to horizontally connect the electrode portions to each other, and protrusions provided on the connection region to extend from the electrode connecting portion in the first direction and to be spaced apart from each other in the second direction.

公开(公告)号：US20170207238A1

公开(公告)日：2017-07-20

申请号：US15403779

申请日：2017-01-11

申请人： Chang-Sup Lee ,  Sung-Hun Lee ,  Joonhee Lee ,  Seong Soon Cho

发明人： Chang-Sup Lee ,  Sung-Hun Lee ,  Joonhee Lee ,  Seong Soon Cho

IPC分类号： H01L27/11582 ,  H01L23/535 ,  H01L23/528 ,  H01L29/423 ,  H01L27/11556 ,  H01L23/522

CPC分类号： H01L27/11582 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L29/42328 ,  H01L29/42344

摘要： A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region and an electrode structure including first and second electrodes alternatingly and vertically stacked on the substrate and having a stair-step structure on the connection region. Each of the first and second electrodes may include electrode portions provided on the cell array region to extend in a first direction and to be spaced apart from each other in a second direction perpendicular to the first direction, an electrode connecting portion provided on the connection region to extend in the second direction and to horizontally connect the electrode portions to each other, and protrusions provided on the connection region to extend from the electrode connecting portion in the first direction and to be spaced apart from each other in the second direction.

公开(公告)号：US20190148295A1

公开(公告)日：2019-05-16

申请号：US16247712

申请日：2019-01-15

申请人： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

发明人： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC分类号： H01L23/528 ,  H01L27/11575 ,  H01L27/11582 ,  H01L27/1157 ,  H01L23/522 ,  H01L27/11578 ,  H01L21/768 ,  H01L27/11565 ,  H01L27/11551 ,  H01L27/11556

摘要： A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US20170179028A1

公开(公告)日：2017-06-22

申请号：US15350305

申请日：2016-11-14

申请人： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

发明人： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC分类号： H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L27/115

CPC分类号： H01L23/5283 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/5226 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582

摘要： A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US20160343434A1

公开(公告)日：2016-11-24

申请号：US14969843

申请日：2015-12-15

申请人： Joonhee Lee ,  Jiyoung Kim ,  Jintaek Park ,  Seong Soon Cho

发明人： Joonhee Lee ,  Jiyoung Kim ,  Jintaek Park ,  Seong Soon Cho

IPC分类号： G11C13/00

CPC分类号： G11C13/0026 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/53 ,  G11C2213/71 ,  G11C2213/75 ,  H01L27/24 ,  H01L27/2454 ,  H01L27/2481

摘要： Semiconductor devices are provided. A semiconductor device includes a stack of alternating gates and insulating layers. The semiconductor device includes a dummy cell region. The semiconductor device includes a plurality of bit lines and a plurality of auxiliary bit lines. Some of the plurality of auxiliary bit lines have different respective lengths. Related methods of forming semiconductor devices are also provided.

摘要翻译： 提供半导体器件。 半导体器件包括交替栅极和绝缘层的堆叠。 半导体器件包括虚拟单元区域。 半导体器件包括多个位线和多个辅助位线。 多个辅助位线中的一些具有不同的相应长度。 还提供了形成半导体器件的相关方法。

公开(公告)号：US20170345494A1

公开(公告)日：2017-11-30

申请号：US15681910

申请日：2017-08-21

申请人： Joonhee Lee ,  Jiyoung Kim ,  Jintaek Park ,  Seong Soon Cho

发明人： Joonhee Lee ,  Jiyoung Kim ,  Jintaek Park ,  Seong Soon Cho

IPC分类号： G11C13/00 ,  H01L27/24

CPC分类号： G11C13/0026 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/53 ,  G11C2213/71 ,  G11C2213/75 ,  H01L27/24 ,  H01L27/2454 ,  H01L27/2481

摘要： Semiconductor devices are provided. A semiconductor device includes a stack of alternating gates and insulating layers. The semiconductor device includes a dummy cell region. The semiconductor device includes a plurality of bit lines and a plurality of auxiliary bit lines. Some of the plurality of auxiliary bit lines have different respective lengths. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US09773546B2

公开(公告)日：2017-09-26

申请号：US14969843

申请日：2015-12-15

申请人： Joonhee Lee ,  Jiyoung Kim ,  Jintaek Park ,  Seong Soon Cho

发明人： Joonhee Lee ,  Jiyoung Kim ,  Jintaek Park ,  Seong Soon Cho

IPC分类号： G11C13/00 ,  H01L27/24

CPC分类号： G11C13/0026 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/53 ,  G11C2213/71 ,  G11C2213/75 ,  H01L27/24 ,  H01L27/2454 ,  H01L27/2481

摘要： Semiconductor devices are provided. A semiconductor device includes a stack of alternating gates and insulating layers. The semiconductor device includes a dummy cell region. The semiconductor device includes a plurality of bit lines and a plurality of auxiliary bit lines. Some of the plurality of auxiliary bit lines have different respective lengths. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US10276237B2

公开(公告)日：2019-04-30

申请号：US15681910

申请日：2017-08-21

申请人： Joonhee Lee ,  Jiyoung Kim ,  Jintaek Park ,  Seong Soon Cho

发明人： Joonhee Lee ,  Jiyoung Kim ,  Jintaek Park ,  Seong Soon Cho

IPC分类号： H01L27/24 ,  G11C13/00

摘要： Semiconductor devices are provided. A semiconductor device includes a stack of alternating gates and insulating layers. The semiconductor device includes a dummy cell region. The semiconductor device includes a plurality of bit lines and a plurality of auxiliary bit lines. Some of the plurality of auxiliary bit lines have different respective lengths. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US09478560B2

公开(公告)日：2016-10-25

申请号：US14940137

申请日：2015-11-12

申请人： Kwang Soo Seol ,  JinTae Kang ,  Seong Soon Cho

发明人： Kwang Soo Seol ,  JinTae Kang ,  Seong Soon Cho

IPC分类号： G11C11/34 ,  G11C16/04 ,  H01L27/115 ,  H01L29/792 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788 ,  H01L29/06 ,  H01L29/41

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573 ,  H01L29/0676 ,  H01L29/413 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7889 ,  H01L29/7926

摘要： Provided is a memory device including first to third selection lines extending in a first direction and sequentially arranged in a second direction crossing the first direction, multiple sets of first to third vertical pillars, each set coupled with a corresponding one of the first to third selection lines and sequentially arranged in the second direction, a first sub-interconnection connecting the third vertical pillar coupled with the first selection line to the first vertical pillar coupled with the second selection line, a second sub-interconnection connecting the third vertical pillar coupled with the second selection line to the first vertical pillar coupled with the third selection line, and bit lines extending in the second direction and connected to corresponding ones of the first and second sub-interconnections.

公开(公告)号：US08154104B2

公开(公告)日：2012-04-10

申请号：US12077379

申请日：2008-03-19

申请人： Jinhyun Shin ,  Minchul Kim ,  Seong Soon Cho ,  Seungwook Choi

发明人： Jinhyun Shin ,  Minchul Kim ,  Seong Soon Cho ,  Seungwook Choi

IPC分类号： H01L27/06

CPC分类号： H01L27/1052 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11531 ,  H01L28/20

摘要： In a semiconductor device and a method of making the same, the semiconductor device comprises a substrate including a first region and a second region. At least one first gate structure is on the substrate in the first region, the at least one first gate structure including a first gate insulating layer and a first gate electrode layer on the first gate insulating layer. At least one isolating structure is in the substrate in the second region, a top surface of the isolating structure being lower in height than a top surface of the substrate. At least one resistor pattern is on the at least one isolating structure.

摘要翻译： 在半导体器件及其制造方法中，半导体器件包括包括第一区域和第二区域的衬底。 至少一个第一栅极结构在第一区域中的衬底上，所述至少一个第一栅极结构包括第一栅极绝缘层和第一栅极绝缘层上的第一栅极电极层。 至少一个隔离结构位于第二区域中的衬底中，隔离结构的顶表面的高度低于衬底的顶表面。 至少一个隔离结构上至少有一个电阻器图案。