FABRIC ABLE TO FORM ELECTRONIC ELEMENT
    1.
    发明申请
    FABRIC ABLE TO FORM ELECTRONIC ELEMENT 审中-公开
    织物形成电子元件

    公开(公告)号:US20100170704A1

    公开(公告)日:2010-07-08

    申请号:US12676549

    申请日:2008-09-03

    IPC分类号: H05K1/00

    摘要: A cloth material that can form an electronic component includes a cloth material layer, which includes at least one crevice; and a conductive area included in the cloth material layer, wherein a shape of the crevice and a shape of the conductive area change with an outside force. A cloth material that can form an electronic component includes two cloth material layers stacked to form a crevice therebetween; and a conductive area located on the two cloth material layers spanning from one side of the crevice to the other side of the crevice, wherein a shape of the crevice and the conductive area changes with an outside force.

    摘要翻译: 可以形成电子部件的布料包括布料层,其包括至少一个缝隙; 以及包含在布料层中的导电区域,其中缝隙的形状和导电区域的形状随着外力而变化。 可以形成电子部件的布料包括层叠在其间形成缝隙的两层布料层; 以及导电区域,其位于从所述缝隙的一侧到所述缝隙的另一侧的所述两个织物层之间,其中所述缝隙和所述导电区域的形状随着外力而变化。

    Fabric able to form electronic element

    公开(公告)号:US10290444B2

    公开(公告)日:2019-05-14

    申请号:US12676549

    申请日:2008-09-03

    摘要: A cloth material that can form an electronic component includes a cloth material layer, which includes at least one crevice; and a conductive area included in the cloth material layer, wherein a shape of the crevice and a shape of the conductive area change with an outside force. A cloth material that can form an electronic component includes two cloth material layers stacked to form a crevice therebetween; and a conductive area located on the two cloth material layers spanning from one side of the crevice to the other side of the crevice, wherein a shape of the crevice and the conductive area changes with an outside force.

    Cloth comprising separable sensitive areas
    3.
    发明授权
    Cloth comprising separable sensitive areas 有权
    布料包括可分离的敏感区域

    公开(公告)号:US08331097B2

    公开(公告)日:2012-12-11

    申请号:US12676564

    申请日:2008-09-03

    IPC分类号: H05K1/00

    摘要: A cloth material with separate conductive areas includes at least one first layer comprising at least one first conductive area; and at least one extension part, which includes at least one accessory and at least one connecting part connected to the accessory, wherein the extension part comprises at least one second conductive area, which corresponds in location to the first conductive area on the first layer, wherein the first conductive area and the second conductive area are inductively coupled, a condition of inductive coupling is adapted to be changed by an outside force.

    摘要翻译: 具有分开导电区域的布料包括至少一个包含至少一个第一导电区域的第一层; 以及至少一个延伸部分,其包括连接到附件的至少一个附件和至少一个连接部分,其中所述延伸部分包括至少一个第二导电区域,其在位置上对应于第一层上的第一导电区域, 其中所述第一导电区域和所述第二导电区域感应耦合,所述电感耦合条件适于由外力改变。

    CLOTH COMPRISING SEPARABLE SENSITIVE AREAS
    4.
    发明申请
    CLOTH COMPRISING SEPARABLE SENSITIVE AREAS 有权
    包装分离敏感区域

    公开(公告)号:US20100296257A1

    公开(公告)日:2010-11-25

    申请号:US12676564

    申请日:2008-09-03

    IPC分类号: H05K1/00

    摘要: A cloth material with separate conductive areas includes at least one first layer comprising at least one first conductive area; and at least one extension part, which includes at least one accessory and at least one connecting part connected to the accessory, wherein the extension part comprises at least one second conductive area, which corresponds in location to the first conductive area on the first layer, wherein the first conductive area and the second conductive area are inductively coupled, a condition of inductive coupling is adapted to be changed by an outside force.

    摘要翻译: 具有分开导电区域的布料包括至少一个包含至少一个第一导电区域的第一层; 以及至少一个延伸部分,其包括连接到附件的至少一个附件和至少一个连接部分,其中所述延伸部分包括至少一个第二导电区域,其在位置上对应于第一层上的第一导电区域, 其中所述第一导电区域和所述第二导电区域感应耦合,所述电感耦合条件适于由外力改变。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US09202937B2

    公开(公告)日:2015-12-01

    申请号:US13321960

    申请日:2010-05-14

    IPC分类号: H01L29/861 H01L29/40

    摘要: A semiconductor device comprising: a p or p+ doped portion; an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion; an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and said at least one doped portion meet; and at least one additional portion which is arranged for significantly reducing the variation of the electric field strength in said region when a voltage difference is applied between the doped portions.

    摘要翻译: 一种半导体器件,包括:p或p +掺杂部分; 通过半导体漂移部分从p或p +掺杂部分分离的n或n +掺杂部分; 在所述漂移部分和所述至少一个掺杂部分相遇的区域中邻近所述漂移部分设置的绝缘部分和所述掺杂部分中的至少一个; 以及至少一个附加部分,其被设置为当在掺杂部分之间施加电压差时,显着地减小所述区域中的电场强度的变化。

    Synthesis process of dasatinib and intermediate thereof
    10.
    发明授权
    Synthesis process of dasatinib and intermediate thereof 有权
    达沙替尼及其中间体的合成方法

    公开(公告)号:US09108954B2

    公开(公告)日:2015-08-18

    申请号:US13576637

    申请日:2011-01-30

    IPC分类号: C07D417/12 C07D417/14

    CPC分类号: C07D417/12

    摘要: Synthesis process of dasatinib is disclosed, which includes the step of reacting the compound of formula I with that of formula II to obtain the compound of formula III. Also disclosed is the compound of formula III which is used as an intermediate for synthesizing dasatinib. The substituents of R1, R2, R3 or R4 in formulae I, II or III are defined as in the description.

    摘要翻译: 公开了达沙替尼的合成方法,其包括使式I化合物与式II化合物反应以获得式III化合物的步骤。 还公开了用作合成达沙替尼的中间体的式III化合物。 式I,II或III中的R 1,R 2,R 3或R 4的取代基如描述中所定义。