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    Light-emitting device
    7.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US09232586B2

    公开(公告)日：2016-01-05

    申请号：US13336735

    申请日：2011-12-23

    申请人： Schang-Jing Hon ,  Chao-Hsing Chen ,  Hsin-Mao Liu

    发明人： Schang-Jing Hon ,  Chao-Hsing Chen ,  Hsin-Mao Liu

    IPC分类号： H05B37/02 ,  H05B33/08

    CPC分类号： H05B33/0824 ,  H01L2924/0002 ,  H05B33/0815 ,  Y02B20/346 ,  H01L2924/00

    摘要： A light-emitting device is capable of receiving a first voltage signal, a second voltage signal, and a third voltage signal in sequence. The light-emitting device includes a first light-emitting unit, a second light-emitting unit, and a switching. The first voltage signal, the second voltage signal, and the third voltage signal is configured to introduce a first current signal, a second current signal, and a third current signal, respectively. The light-emitting device is configured to emit a first light when introducing the first current signal, the second current signal, and the third current signal. The light-emitting device is configured to emit a second light when introducing the second current signal and the third current signal. The light-emitting device is configured to emit a third light when introducing the second current signal.

    摘要翻译： 发光装置能够依次接收第一电压信号，第二电压信号和第三电压信号。 发光装置包括第一发光单元，第二发光单元和开关。 第一电压信号，第二电压信号和第三电压信号被配置为分别引入第一电流信号，第二电流信号和第三电流信号。 发光装置被配置为在引入第一电流信号，第二电流信号和第三电流信号时发射第一光。 发光装置被配置为在引入第二电流信号和第三电流信号时发射第二光。 发光装置被配置为在引入第二电流信号时发射第三光。

    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    光电装置及其制造方法

    公开(公告)号：US20130032848A1

    公开(公告)日：2013-02-07

    申请号：US13565993

    申请日：2012-08-03

    申请人： Chao-Hsing Chen ,  Chien-Fu Shen ,  Schang-Jing Hon ,  Tsun-Kai Ko ,  Wei-Yo Chen

    发明人： Chao-Hsing Chen ,  Chien-Fu Shen ,  Schang-Jing Hon ,  Tsun-Kai Ko ,  Wei-Yo Chen

    IPC分类号： H01L33/48

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

    摘要： An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.

    摘要翻译： 光电子器件包括半导体堆叠，其包括第一半导体层，有源层和第二半导体层，与第一半导体层电连接的第一电极，与第二半导体层电连接的第二电极，其中存在最小距离 D1在第一电极和第二电极之间形成，第三电极形成在第一电极的一部分上并与第一电极电连接，第四电极形成在第一电极的一部分上并在第二电极的一部分上，以及 与第二电极电连接，其中在第三电极和第四电极之间具有最小距离D2，并且最小距离D2小于最小距离D1。

    Optoelectronic device and method for manufacturing the same
    9.
    发明授权
    Optoelectronic device and method for manufacturing the same 有权
    光电子器件及其制造方法

    公开(公告)号：US08928026B2

    公开(公告)日：2015-01-06

    申请号：US13565993

    申请日：2012-08-03

    申请人： Chao-Hsing Chen ,  Chien-Fu Shen ,  Schang-Jing Hon ,  Tsun-Kai Ko ,  Wei-Yo Chen

    发明人： Chao-Hsing Chen ,  Chien-Fu Shen ,  Schang-Jing Hon ,  Tsun-Kai Ko ,  Wei-Yo Chen

    IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/20

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

    摘要： An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.

    摘要翻译： 光电子器件包括半导体堆叠，其包括第一半导体层，有源层和第二半导体层，与第一半导体层电连接的第一电极，与第二半导体层电连接的第二电极，其中存在最小距离 D1在第一电极和第二电极之间形成，第三电极形成在第一电极的一部分上并与第一电极电连接，第四电极形成在第一电极的一部分上并在第二电极的一部分上，以及 与第二电极电连接，其中在第三电极和第四电极之间具有最小距离D2，并且最小距离D2小于最小距离D1。

    Light-emitting device
    10.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08710515B2

    公开(公告)日：2014-04-29

    申请号：US12874666

    申请日：2010-09-02

    申请人： Chao-Hsing Chen ,  Schang-Jing Hon

    发明人： Chao-Hsing Chen ,  Schang-Jing Hon

    IPC分类号： H01L33/00

    CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

    摘要翻译： 本公开公开了一种发光装置。 发光装置包括：基板; 以及包括在所述基板上彼此电连接的多个发光二极管的第一发光单元。 第一发光单元中的第一发光二极管包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在第一和第二半导体层之间的发光叠层 。 第一发光单元中的第一发光二极管还包括在第一半导体层上的第一连接层，用于电连接到第一发光单元中的第二发光二极管; 与所述第一连接层分离的形成在所述第一半导体层上的第二连接层; 以及在第二半导体层上的第三连接层，用于电连接到第一发光单元中的第三发光二极管。