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    Method of manufacturing semiconductor device
    4.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08617991B2

    公开(公告)日：2013-12-31

    申请号：US13526960

    申请日：2012-06-19

    申请人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

    发明人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

    IPC分类号： H01L21/44

    CPC分类号： H01L29/4983 ,  H01L21/76895 ,  H01L21/82345 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/78

    摘要： A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.

    摘要翻译： 一种制造半导体器件的方法包括：在衬底的第一和第二区域上分别形成具有第一和第二沟槽的层间电介质膜，沿着第一沟槽的侧壁和底表面沿顶部形成第一金属层 在所述第一区域中的所述层间电介质膜的表面，沿着所述第二沟槽的侧壁和底表面沿着所述第二区域中的所述层间电介质膜的顶表面形成第二金属层，在所述第二区域中形成第一牺牲层图案 第一金属层，使得第一牺牲层填充第一沟槽的一部分，通过使用第一牺牲层图案蚀刻第一金属层和第二金属层形成第一电极层，以及去除第一牺牲层图案。

    Sub-word-line driving circuit, semiconductor memory device having the same, and method of controlling the same
    6.
    发明授权
    Sub-word-line driving circuit, semiconductor memory device having the same, and method of controlling the same 有权
    子字线驱动电路，具有其的半导体存储器件及其控制方法

    公开(公告)号：US08379477B2

    公开(公告)日：2013-02-19

    申请号：US13019858

    申请日：2011-02-02

    申请人： Cheol Kim ,  Sang-Kyun Park ,  Jung-Bae Lee ,  Jun-Phyo Lee

    发明人： Cheol Kim ,  Sang-Kyun Park ,  Jung-Bae Lee ,  Jun-Phyo Lee

    IPC分类号： G11C8/10

    CPC分类号： G11C8/14 ,  G11C8/08

    摘要： Provided is a semiconductor memory device including a sub-word-line driving circuit capable of reducing an amount of leakage current due to coupling. The semiconductor memory device includes a word-line enable signal generating circuit and a sub-word-line driving circuit. The sub-word-line driving circuit provides a pull-down current path between a selected word line and ground for a pulse type period of time in a precharge mode following an active mode for the selected word line, generates a word line driving signal on the basis of a main word line driving signal, a first sub-word-line control signal, and a second sub-word-line control signal, and provides the word line driving signal to a memory cell array. The semiconductor memory device may reduce an amount of leakage current flowing to a ground through the sub-word-line driving circuit.

    摘要翻译： 提供了一种半导体存储器件，其包括能够减少由耦合引起的漏电流量的子字线驱动电路。 半导体存储器件包括字线使能信号发生电路和子字线驱动电路。 子字线驱动电路在所选字线的有效模式之后的预充电模式中的脉冲类型时段期间，在所选字线和地之间提供下拉电流路径，生成字线驱动信号 主字线驱动信号的基础，第一子字线控制信号和第二子字线控制信号，并将字线驱动信号提供给存储单元阵列。 半导体存储器件可以减少通过子字线驱动电路流向地的漏电流量。

    SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED REFRESH CHARACTERISTICS
    7.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED REFRESH CHARACTERISTICS 有权
    具有改进的刷新特性的半导体存储器件

    公开(公告)号：US20130016574A1

    公开(公告)日：2013-01-17

    申请号：US13548484

    申请日：2012-07-13

    申请人： Jung-sik Kim ,  Cheol Kim ,  Sang-ho Shin ,  Jung-bae Lee ,  Chan-yong Lee ,  Sung-min Yim ,  Tae-seong Jang ,  Joo-sun Choi

    发明人： Jung-sik Kim ,  Cheol Kim ,  Sang-ho Shin ,  Jung-bae Lee ,  Chan-yong Lee ,  Sung-min Yim ,  Tae-seong Jang ,  Joo-sun Choi

    IPC分类号： G11C29/08 ,  G11C7/00

    CPC分类号： G11C29/50016 ,  G11C5/04 ,  G11C11/40 ,  G11C11/406 ,  G11C11/40615 ,  G11C11/40622 ,  G11C2211/4061 ,  G11C2211/4065

    摘要： A semiconductor memory device having improved refresh characteristics includes a memory array including a plurality of memory cells; a test unit configured to test refresh characteristics of the memory array and generate a first fail address signal; a storage unit configured to store the first fail address signal; and a refresh unit configured to perform a refresh operation on the memory array, wherein the refresh unit is configured to receive the first fail address signal from the storage unit, perform the refresh operation on a first memory cell that does not correspond to the first fail address signal according to a first period, and perform the refresh operation on a second memory cell that corresponds to the first fail address signal according to a second period that is shorter than the first period.

    摘要翻译： 具有改进的刷新特性的半导体存储器件包括包括多个存储器单元的存储器阵列; 测试单元，被配置为测试所述存储器阵列的刷新特性并产生第一故障地址信号; 存储单元，被配置为存储所述第一失败地址信号; 以及刷新单元，被配置为对所述存储器阵列执行刷新操作，其中所述刷新单元被配置为从所述存储单元接收所述第一故障地址信号，对与所述第一故障不对应的第一存储器单元执行刷新操作 根据第一期间的地址信号，根据比第一期间短的第二期间对与第一失败地址信号对应的第二存储单元进行刷新动作。

    Scroll compressor
    8.
    发明申请
    Scroll compressor 有权
    涡旋压缩机

    公开(公告)号：US20070140885A1

    公开(公告)日：2007-06-21

    申请号：US11641027

    申请日：2006-12-19

    申请人： Jeong Suh ,  Cheol Kim ,  Dong Shin

    发明人： Jeong Suh ,  Cheol Kim ,  Dong Shin

    IPC分类号： F01C1/02 ,  F01C1/063

    CPC分类号： F04C18/0215 ,  F04C23/008 ,  F04C29/0085 ,  F04C29/02 ,  F04C2240/60

    摘要： A scroll-type compressor includes a compression unit, a main frame supporting the compression unit, and a driving shaft having an oil supply path. The oil supply path is located eccentrically with the driving shaft and an upper part of the driving shaft is supported by the main frame. The compressor also has a motor for rotating the driving shaft, an oil cap located on an upper side of a rotor of the motor, and a balance member to compensate the driving shaft.

    摘要翻译： 涡旋式压缩机包括压缩单元，支撑压缩单元的主框架和具有供油路径的驱动轴。 供油路径与驱动轴偏心定位，驱动轴的上部由主框架支撑。 压缩机还具有用于使驱动轴旋转的电动机，位于电动机的转子的上侧的油帽和补偿驱动轴的平衡构件。

    Apparatus and method for processing an ultrasound spectrum image
    9.
    发明申请
    Apparatus and method for processing an ultrasound spectrum image 有权
    用于处理超声波光谱图像的装置和方法

    公开(公告)号：US20070016073A1

    公开(公告)日：2007-01-18

    申请号：US11413157

    申请日：2006-04-28

    申请人： Hye Kim ,  Ki Lee ,  Sung Kim ,  Eun Yang ,  Cheol Kim

    发明人： Hye Kim ,  Ki Lee ,  Sung Kim ,  Eun Yang ,  Cheol Kim

    IPC分类号： A61B6/00

    CPC分类号： G01S7/52077 ,  A61B8/06 ,  G01S7/52026 ,  G01S15/584 ,  G01S15/8979 ,  G06K9/0055

    摘要： There is provided a method of processing an ultrasound spectrum image. According to such method, a spectrum image is formed based on ultrasound data and then the noise is removed from the spectrum image. The noise-removed spectrum image is matched with one or more spectrum models representing specific spectrum types. Then, whether or not the noise-removed spectrum image contains an aliasing is checked. If the noise-removed spectrum image contains the aliasing, then the aliasing is removed from the noise-removed spectrum image to provide a noise-removed spectrum image without the aliasing. Thereafter, contour tracing is performed on the noise-removed spectrum image without the aliasing to detect contour points. Further, peak tracing is performed on the noise-removed spectrum image without the aliasing to detect peaks.

    摘要翻译： 提供了一种处理超声波频谱图像的方法。 根据这种方法，基于超声数据形成频谱图像，然后从频谱图像中去除噪声。 噪声消除的光谱图像与表示特定光谱类型的一个或多个光谱模型相匹配。 然后，检查噪声去除的频谱图像是否包含混叠。 如果噪声去除的频谱图像包含混叠，则从去除噪声的频谱图像中去除混叠，以提供没有混叠的噪声去除的频谱图像。 此后，对噪声去除的频谱图像执行轮廓跟踪，而不需要混叠来检测轮廓点。 此外，在没有混叠的噪声去除的频谱图像上执行峰值跟踪以检测峰值。