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    Ingredients and manufacturing method of water dispersible pesticide granules
    1.
    发明申请
    Ingredients and manufacturing method of water dispersible pesticide granules 审中-公开
    水分散农药颗粒的成分和制备方法

    公开(公告)号：US20050159316A1

    公开(公告)日：2005-07-21

    申请号：US10758190

    申请日：2004-01-16

    申请人： Chia-Chung Chen ,  Che-Cheng Lin

    发明人： Chia-Chung Chen ,  Che-Cheng Lin

    IPC分类号： A01N25/04 ,  A01N25/12

    CPC分类号： A01N25/04

    摘要： A water dispersible granule includes the ingredients of wetting agent, dispersing agent, binder, disintegratant, acid, base, carrier and pesticide, wherein the above ingredients are combined to be 100%. All the above components of insecticide are mixed with water and extruded. The extruded material is baked in an oven that has operation temperature set from 40° C. to 50° C. and the baked material ground into small granules by machine or manpower.

    摘要翻译： 水分散性颗粒包括润湿剂，分散剂，粘合剂，崩解剂，酸，碱，载体和农药的成分，其中上述成分组合为100％。 所有上述杀虫剂成分与水混合并挤出。 挤出的材料在烘箱中烘烤，操作温度设定为40℃至50℃，烘烤的材料通过机器或人力研磨成小颗粒。

    Noise Decoupling Structure with Through-Substrate Vias
    3.
    发明申请
    Noise Decoupling Structure with Through-Substrate Vias 有权
    噪声去耦结构与通孔通孔

    公开(公告)号：US20120074515A1

    公开(公告)日：2012-03-29

    申请号：US12889650

    申请日：2010-09-24

    申请人： Chia-Chung Chen ,  Chewn-Pu Jou ,  Sally Liu

    发明人： Chia-Chung Chen ,  Chewn-Pu Jou ,  Sally Liu

    IPC分类号： H01L29/08

    CPC分类号： H01L23/66 ,  H01L21/76224 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/585 ,  H01L29/0619 ,  H01L2223/6616 ,  H01L2223/6666 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate.

    摘要翻译： 一种装置包括具有前表面和后表面的基板; 在基板的前表面上的集成电路器件; 以及在所述基板的背面上的金属板，其中所述金属板与所述集成电路器件的整体重叠。 保护环延伸到基板中并且环绕集成电路装置。 保护环由导电材料形成。 贯穿基板通孔（TSV）穿透基板并与金属板电耦合。

    Linear-Cap Varactor Structures for High-Linearity Applications
    4.
    发明申请
    Linear-Cap Varactor Structures for High-Linearity Applications 有权
    用于高线性度应用的线性容限变阻器结构

    公开(公告)号：US20120043590A1

    公开(公告)日：2012-02-23

    申请号：US12858291

    申请日：2010-08-17

    申请人： Chia-Chung Chen ,  Chewn-Pu Jou

    发明人： Chia-Chung Chen ,  Chewn-Pu Jou

    IPC分类号： H01L29/772

    CPC分类号： H01L29/93 ,  H01L27/0629 ,  H01L27/0808

    摘要： A device includes a well region over a substrate, and a heavily doped well region over the well region, wherein the well region and the heavily doped well region are of a same conductivity type. A gate dielectric is formed on a top surface of the heavily doped well region. A gate electrode is formed over the gate dielectric. A source region and a drain region are formed on opposite sides of the heavily doped well region. The source region and the drain region have bottom surfaces contacting the well region, and wherein the source region and the drain region are of opposite conductivity types.

    摘要翻译： 器件包括衬底上的阱区域以及阱区上的重掺杂阱区，其中阱区和重掺杂阱区具有相同的导电类型。 栅极电介质形成在重掺杂阱区的顶表面上。 在栅极电介质上形成栅电极。 源极区和漏极区形成在重掺杂阱区的相对侧上。 源极区域和漏极区域具有与阱区域接触的底表面，并且其中源极区域和漏极区域具有相反的导电类型。

    Four-terminal gate-controlled LVBJTs
    7.
    发明授权
    Four-terminal gate-controlled LVBJTs 有权
    四端门控LVBJT

    公开(公告)号：US08115280B2

    公开(公告)日：2012-02-14

    申请号：US12715071

    申请日：2010-03-01

    申请人： Chia-Chung Chen ,  Shuo-Mao Chen ,  Chin-Wei Kuo ,  Sally Liu

    发明人： Chia-Chung Chen ,  Shuo-Mao Chen ,  Chin-Wei Kuo ,  Sally Liu

    IPC分类号： H01L29/735 ,  H01L29/732

    CPC分类号： H01L21/8224 ,  H01L27/0207 ,  H01L27/0821 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/0692 ,  H01L29/735

    摘要： An integrated circuit structure includes a well region of a first conductivity type, an emitter of a second conductivity type opposite the first conductivity type over the well region, a collector of the second conductivity type over the well region and substantially encircling the emitter, and a base contact of the first conductivity type over the well region. The base contact is horizontally spaced apart from the emitter by the collector. At least one conductive strip horizontally spaces the emitter, the collector, and the base contact apart from each other. A dielectric layer is directly under, and contacting, the at least one conductive strip.

    摘要翻译： 集成电路结构包括第一导电类型的阱区域，在阱区域上与第一导电类型相反的第二导电类型的发射极，在阱区域上的基本上环绕发射极的第二导电类型的集电极，以及 第一导电类型在阱区上的基极接触。 基座接触件通过收集器与发射器水平间隔开。 至少一个导电条水平地将发射器，集电器和基座接触件彼此分开间隔开。 电介质层直接位于至少一个导电带的下面并与其接触。

    Method and recording device capable of selecting a write strategy applied to an optical disc
    8.
    发明授权
    Method and recording device capable of selecting a write strategy applied to an optical disc 失效
    能够选择应用于光盘的写入策略的方法和记录装置

    公开(公告)号：US07397740B2

    公开(公告)日：2008-07-08

    申请号：US10904759

    申请日：2004-11-26

    申请人： Chia-Chung Chen ,  Chih-Ching Yu

    发明人： Chia-Chung Chen ,  Chih-Ching Yu

    IPC分类号： G11B7/00

    CPC分类号： G11B7/1267 ,  G11B7/00456 ,  G11B2007/0006

    摘要： A method and a recording device capable of selecting a preferred write strategy from a plurality of write strategies for an optical disc. The optical disc contains a characteristic value. The method includes: reading the characteristic value from the optical disc; selecting a first write strategy from the write strategies to be an active test write strategy according to the characteristic value of the optical disc; writing a test pattern onto the optical disc according to the active test write strategy; and reading the written test pattern from the optical disc, checking if the written test pattern satisfies a corresponding criterion, and utilizing the active test write strategy to be the preferred write strategy if the written test pattern satisfies the corresponding criterion.

    摘要翻译： 一种能够从光盘的多个写入策略中选择优选的写入策略的方法和记录装置。 光盘包含特征值。 该方法包括：从光盘读取特征值; 根据光盘的特征值，从写入策略中选择第一写策略作为主动测试写策略; 根据主动测试写入策略将测试图案写入光盘; 并从光盘读取写入的测试图形，检查写入的测试图案是否满足相应的标准，如果写入的测试图案满足相应的标准，则使用主动测试写入策略作为首选写入策略。

    Quaternary ammonium salts of a sulfonylurea
    9.
    发明授权
    Quaternary ammonium salts of a sulfonylurea 失效
    磺酰脲的季铵盐

    公开(公告)号：US06225260B1

    公开(公告)日：2001-05-01

    申请号：US09315391

    申请日：1999-05-20

    申请人： Robert D. Wysong ,  Chia-Chung Chen ,  Chuen-Ing Tseng ,  Arturo A. Tirol

    发明人： Robert D. Wysong ,  Chia-Chung Chen ,  Chuen-Ing Tseng ,  Arturo A. Tirol

    IPC分类号： A01N2530

    CPC分类号： C07D521/00

    摘要： The present invention provides a compound comprising a quaternary ammonium salt of a sulfonylurea having the formula wherein R1 is a substituted or unsubstituted phenyl, heterocyclic ring, or phenoxy, or —N(CH3)(SO2CH3); R2 is H or CH3; R3 is a substituted or unsubstituted pyrimidine or a substituted or unsubstituted triazine; R4 and R5 are independently unsubstituted or hydroxy substituted linear or branched C1-C4 alkyls, —(CH2CH2O)mCH2CH2OH, or —(CH2CHCH3O)mCH2CHCH3OH where m is 1 to 10; R6 is a substituted or unsubstituted benzyl, ethylbenzyl, naphthylmethyl, or linear or branched C1-C22 alkyl; R7 is a substituted or unsubstituted, linear or branched C8-C22 alkyl or —R13(O)n(C6H5)R14 where n is 0 or 1; R13 is a substituted or unsubstituted C1-C8 alkyl or C1-C8 alkoxyalkyl; and R14 is a substituted or unsubstituted, linear or branched C1-C12 alkyl. Also, a method of preparing a quaternary ammonium salt of a sulfonylurea is provided. The method comprises contacting a quaternary ammonium hydroxide and a sulfonylurea to form the quaternary ammonium salt of the sulfonylurea. The quaternary ammonium salts of a sulfonylurea are useful as herbicides, fungicides, and plant growth regulating agents.

    摘要翻译： 本发明提供了包含磺酰脲的季铵盐的化合物，其具有取代或未取代的苯基，杂环或苯氧基或-N（CH 3）（SO 2 CH 3）; R2是H或CH3; R3是取代或未取代的嘧啶或取代或未取代的三嗪; R 4和R 5独立地是未取代的或羟基取代的直链或支链C 1 -C 4烷基， - （CH 2 CH 2 O）mCH 2 CH 2 OH或 - （CH 2 CH 3 OCH 3）mCH 2 CHCH 3 OH，其中m为1至10; R6是取代或未取代的苄基，乙基苄基，萘甲基或直链或支链C 1 -C 22烷基; R 7是取代或未取代的直链或支链C 8 -C 22烷基或-R 13（O）n（C 6 H 5）R 14，其中n是0或1; R 13是取代或未取代的C 1 -C 8烷基或C 1 -C 8烷氧基烷基; 并且R 14是取代或未取代的直链或支链C 1 -C 12烷基。 另外，提供了制备磺酰脲季铵盐的方法。 该方法包括使季铵氢氧化物和磺酰脲接触以形成磺酰脲的季铵盐。 磺酰脲的季铵盐可用作除草剂，杀真菌剂和植物生长调节剂。