Abstract:
The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer.
Abstract:
A device of testing a vibrating device includes a housing, a connector, an indicator, and a vibrating sensing apparatus. The connector, the indicator, and the vibrating sensing apparatus are mounted with the housing, and electronically connected in series. When the test device is vibrated by a portable electronic device received in the housing, the vibrating sensing apparatus forms a closed circuit with the connector and the indicator to activate the indicator to indicate whether the vibrating performance of the portable electronic device is normal or not.
Abstract:
A conveying mechanism (20) includes a main rotating member (22), a subsidiary rotating member (23) and a transport belt (24). The subsidiary rotating member includes a first driven axle (231) and a second driven axle (232) both driven by the main rotating member, a diameter of the first driven axle is less than that of the second driven axle and the main rotating member. The transport belt is wrapped around the main rotating member and the subsidiary rotating member, and driven to move by the main rotating member.
Abstract:
A production line used to assemble and test some electronic elements includes a first assembly line used to assemble some electronic elements requiring a relatively high requirements of cleanliness factor, a second assembly line used to assemble some electronic elements requiring a relatively low requirements of cleanliness factor, a first testing line used to do some testing items with a relatively high requirements of lightness, a second testing line used to do some testing items with a relatively low requirements of lightness, and a third testing line do some testing items requiring a relatively high requirements of cleanliness factor, the first assembly line, the second assembly line, the first testing line, the second testing line, and the third testing line are located adjacent to each other and connected together in series.
Abstract:
The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer.
Abstract:
A motor vehicle is provided. The motor vehicle comprises a vehicle body, a front wheel, a rear wheel and a tilting mechanism. The front wheel, the rear wheel and the tilting mechanism are disposed on the vehicle body. The tilting mechanism comprises a first compensation unit, a first arm, a first wheel, a second compensation unit, a second arm, a second wheel, at least one pipe and a fluid. The first arm is connected to the first compensation unit, and the first wheel. The second arm is connected to the second compensation unit, and the second wheel. The pipe connects the first compensation unit to the second compensation unit. The fluid flows in the first compensation unit, the second compensation unit and the pipe, wherein when the motor vehicle tilts, an extension length of the first compensation unit equals to a compression length of the second compensation unit.
Abstract:
A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.
Abstract:
A semiconductor light emitting structure including a substrate, a second type electrode layer, a reflecting layer, an insulating layer, a first type electrode layer, a first type semiconductor layer, an active layer and a second type semiconductor layer is provided. The second type electrode layer formed on the substrate has a current spreading grating formed by several conductive pillars and conductive walls, which are staggered and connected to each other. The reflecting layer and the insulating layer are formed on the second type electrode layer in sequence, and cover each conductive pillar and each conductive wall. The first type electrode layer, the first type semiconductor layer and the active layer are formed on the insulating layer in sequence. The second type semiconductor layer is formed on the active layer, and covers each conductive pillar and each conductive wall.