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1.发明授权
公开(公告)号：US6060954A
公开(公告)日：2000-05-09
申请号：US89269
申请日：1998-06-02
申请人： Chia-Wei Liu , Yu-Yuan Tsai
发明人： Chia-Wei Liu , Yu-Yuan Tsai
CPC分类号： H05K1/16 , H03B5/1203 , H03B5/1231 , H03B5/1243
摘要： An oscillator device including at least an inductor, a resistor, a transistor and a capacitor is disclosed. The oscillator device further includes a first transmission layer for electrically connecting the capacitor, the resistor and the transistor; a second transmission layer for forming the inductor; two ground layers electrically connected to the first and the second transmission layers and interconnected for providing a standard potential level; and three isolation layers located between the transmission layers and the ground layers for isolating the transmission layers from the ground layers.
摘要翻译： 公开了至少包括电感器，电阻器，晶体管和电容器的振荡器装置。 振荡器装置还包括用于电连接电容器，电阻器和晶体管的第一透射层; 用于形成电感器的第二透射层; 两个接地层电连接到第一和第二传输层并互连以提供标准电位电平; 以及位于传输层和接地层之间的三个隔离层，用于将透射层与接地层隔离。
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公开(公告)号：US20090179487A1
公开(公告)日：2009-07-16
申请号：US12132691
申请日：2008-06-04
申请人： Chia-Wei Liu
发明人： Chia-Wei Liu
IPC分类号： H02J1/00
CPC分类号： H02J1/08 , H02M2001/008 , Y10T307/406
摘要： The configurations of a distributed power architecture are provided. The proposed distributed power architecture includes a first converter having a first power stage, a plurality of second converter, each of which has a second power stage and is coupled to the first converter, and a centralized control unit controlling the first converter and the plurality of second converters.
摘要翻译： 提供了分布式电源架构的配置。 所提出的分布式电源架构包括具有第一功率级，多个第二转换器的第一转换器，每个转换器具有第二功率级并耦合到第一转换器，以及控制第一转换器和多个第二转换器的集中控制单元 第二转换器。
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3.发明申请High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage 有权具有用于防止泄漏并改善击穿电压的层间电介质蚀刻停止层的高压晶体管器件公开(公告)号：US20060113627A1
公开(公告)日：2006-06-01
申请号：US10999508
申请日：2004-11-29
申请人： Chung-I Chen , Hsin Kuan , Zhi-Cheng Chen , Rann-Shyan Yeh , Chi-Hsuen Chang , Jun Liu , Tzu-Chiang Sung , Chia-Wei Liu , Jieh-Ting Chang
发明人： Chung-I Chen , Hsin Kuan , Zhi-Cheng Chen , Rann-Shyan Yeh , Chi-Hsuen Chang , Jun Liu , Tzu-Chiang Sung , Chia-Wei Liu , Jieh-Ting Chang
IPC分类号： H01L29/00
CPC分类号： H01L29/7835 , H01L21/76829 , H01L21/76832 , H01L29/0653 , H01L29/665 , H01L29/66659 , H01L29/66689 , H01L29/7816 , H01L29/7833 , H01L29/7836
摘要： A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having a resistivity greater than 10 ohm-cm, thus leakage is prevented and breakdown voltage is improved when driving a high voltage greater than 5V at the gate site. A method for fabricating the high-voltage device is compatible with current low-voltage device processes and middle-voltage device processes.
摘要翻译： 提供了一种用于后续接触孔工艺的具有层间电介质（ILD）蚀刻停止层的高压晶体管器件。 蚀刻停止层是具有大于10欧姆 - 厘米电阻率的高电阻率薄膜，因此在栅极处驱动大于5V的高电压时，可以防止泄漏并提高击穿电压。 制造高压器件的方法与当前的低压器件工艺和中压器件工艺兼容。
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公开(公告)号：US08152143B2
公开(公告)日：2012-04-10
申请号：US12146198
申请日：2008-06-25
申请人： Yew-Khoy Chuah , Chia-Wei Liu , Nien-Hung Yao , Min-Hsiang Hung
发明人： Yew-Khoy Chuah , Chia-Wei Liu , Nien-Hung Yao , Min-Hsiang Hung
IPC分类号： B01F3/04
CPC分类号： F28F25/10 , Y10S261/11
摘要： An improved structure of cooling tower includes a fan housing with a fan disposed therein, induction openings distributed on the fan housing and located below the fan, and a diffuser stack disposed at one end surface of the fan housing. In operation, cold air is drawn into the cooling tower by the fan through inlet openings of the cooling tower so as to exchange heat with the condensing water within a water chiller. When warm and wet air is drawn out of the cooling tower and the warm and wet air outside the cooling tower is induced in through the induction openings and then is drawn out, circulation reflux of warm and wet air, which tends to occur in conventional cooling towers, can be avoided and therefore increase the efficiency of the water chiller.
摘要翻译： 改进的冷却塔结构包括风扇壳体，风扇设置在其中，感应开口分布在风扇壳体上并位于风扇下方，散热器堆叠设置在风扇壳体的一个端面处。 在运行中，通过风扇通过冷却塔的入口将冷空气吸入冷却塔，以便与冷水机内的冷凝水进行热交换。 当暖湿空气从冷却塔中抽出时，冷却塔外部的暖湿空气通过感应孔引入，然后被抽出，在常规冷却中倾向于发生温湿空气循环回流 塔，可以避免，从而提高冷水机的效率。
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5.发明授权Semiconductor structure for isolating integrated circuits of various operating voltages 有权用于隔离各种工作电压的集成电路的半导体结构公开(公告)号：US07498653B2
公开(公告)日：2009-03-03
申请号：US11273228
申请日：2005-11-12
申请人： Chia-Wei Liu , Jun Xiu Liu , Chi-Hsuen Chang , Tzu-Chiang Sung , Chung-I Chen , Rann-Shyan Yeh
发明人： Chia-Wei Liu , Jun Xiu Liu , Chi-Hsuen Chang , Tzu-Chiang Sung , Chung-I Chen , Rann-Shyan Yeh
IPC分类号： H01L29/00
CPC分类号： H01L21/761 , H01L21/823481 , H01L27/088
摘要： A semiconductor structure for isolating a first circuit and a second circuit of various operating voltages includes a first isolation ring surrounding the first and second circuits on a semiconductor substrate. A buried layer continuously extending underneath the first and second circuits is formed on the semiconductor substrate, wherein the buried layer interfaces with the first isolation ring for isolating the first and second circuits from a backside bias of the semiconductor substrate. An ion enhanced isolation layer is interposed between the buried layer and well regions on which devices of the first and second circuits are formed, wherein the ion enhanced isolation layer is doped with impurities of a polarity type different from that of the buried layer.
摘要翻译： 用于隔离各种工作电压的第一电路和第二电路的半导体结构包括围绕半导体衬底上的第一和第二电路的第一隔离环。 在第一和第二电路下连续延伸的掩埋层形成在半导体衬底上，其中掩埋层与第一隔离环接合，用于将第一和第二电路与半导体衬底的背面偏置隔离。 离子增强隔离层介于掩埋层和形成有第一和第二电路的器件的阱区之间，其中离子增强隔离层掺杂了与掩埋层不同的极性类型的杂质。
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6.发明申请Semiconductor structure for isolating integrated circuits of various operating voltages 有权用于隔离各种工作电压的集成电路的半导体结构公开(公告)号：US20070235831A1
公开(公告)日：2007-10-11
申请号：US11273228
申请日：2005-11-12
申请人： Chia-Wei Liu , Jun Liu , Chi-Hsuen Chang , Tzu-Chiang Sung , Chung-I Chen , Rann-Shyan Yeh
发明人： Chia-Wei Liu , Jun Liu , Chi-Hsuen Chang , Tzu-Chiang Sung , Chung-I Chen , Rann-Shyan Yeh
CPC分类号： H01L21/761 , H01L21/823481 , H01L27/088
摘要： A semiconductor structure for isolating a first circuit and a second circuit of various operating voltages includes a first isolation ring surrounding the first and second circuits on a semiconductor substrate. A buried layer continuously extending underneath the first and second circuits is formed on the semiconductor substrate, wherein the buried layer interfaces with the first isolation ring for isolating the first and second circuits from a backside bias of the semiconductor substrate. An ion enhanced isolation layer is interposed between the buried layer and well regions on which devices of the first and second circuits are formed, wherein the ion enhanced isolation layer is doped with impurities of a polarity type different from that of the buried layer.
摘要翻译： 用于隔离各种工作电压的第一电路和第二电路的半导体结构包括围绕半导体衬底上的第一和第二电路的第一隔离环。 在第一和第二电路下连续延伸的掩埋层形成在半导体衬底上，其中掩埋层与第一隔离环接合，用于将第一和第二电路与半导体衬底的背面偏置隔离。 离子增强隔离层介于掩埋层和形成有第一和第二电路的器件的阱区之间，其中离子增强隔离层掺杂了与掩埋层不同的极性类型的杂质。
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公开(公告)号：US09190729B2
公开(公告)日：2015-11-17
申请号：US13480132
申请日：2012-05-24
摘要： Antenna designs are disclosed that exhibit both high bandwidth and efficiency. A first aspect of the invention concerns the form factor of the antenna; a second aspect of the invention concerns the ease with which the antenna is manufactured; and a third aspect concerns the superior performance exhibits by the antenna across a large bandwidth.
摘要翻译： 公开了具有高带宽和高效率的天线设计。 本发明的第一方面涉及天线的形状因子; 本发明的第二方面涉及制造天线的容易性; 并且第三方面涉及天线跨越大带宽的优越性能。
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公开(公告)号：US20090321968A1
公开(公告)日：2009-12-31
申请号：US12146198
申请日：2008-06-25
申请人： Yew-Khoy Chuah , Chia-Wei Liu , Nien-Hung Yao , Min-Hsiang Hung
发明人： Yew-Khoy Chuah , Chia-Wei Liu , Nien-Hung Yao , Min-Hsiang Hung
IPC分类号： B01F3/04
CPC分类号： F28F25/10 , Y10S261/11
摘要： An improved structure of cooling tower includes a fan housing with a fan disposed therein, induction openings distributed on the fan housing and located below the fan, and a diffuser stack disposed at one end surface of the fan housing. In operation, cold air is drawn into the cooling tower by the fan through inlet openings of the cooling tower so as to exchange heat with the condensing water within a water chiller. When warm and wet air is drawn out of the cooling tower and the warm and wet air outside the cooling tower is induced in through the induction openings and then is drawn out, circulation reflux of warm and wet air, which tends to occur in conventional cooling towers, can be avoided and therefore increase the efficiency of the water chiller.
摘要翻译： 改进的冷却塔结构包括风扇壳体，风扇设置在其中，感应开口分布在风扇壳体上并位于风扇下方，散热器堆叠设置在风扇壳体的一个端面处。 在运行中，通过风扇通过冷却塔的入口将冷空气吸入冷却塔，以便与冷水机内的冷凝水进行热交换。 当暖湿空气从冷却塔中抽出时，冷却塔外部的暖湿空气通过感应孔引入，然后被抽出，在常规冷却中倾向于发生温湿空气循环回流 塔，可以避免，从而提高冷水机的效率。
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公开(公告)号：US20080175705A1
公开(公告)日：2008-07-24
申请号：US11624810
申请日：2007-01-19
申请人： Chia-Wei Liu
发明人： Chia-Wei Liu
IPC分类号： F01D25/04
CPC分类号： F04D29/668 , F04D29/601
摘要： An anti-vibration fan includes a frame, a bottom chassis and an elastic frame. The elastic frame includes a plurality of curved plate-like suspending arms, each having a first suspending arm section. An end of the suspending arm section has a bent section with a curved shape at its middle section, and an end of the bent section has a second suspending arm section. The bottom chassis includes a disc body and a plurality of protruding ribs extended upward from the disc body and connected to the first suspending arm section. The second suspending arm section is connected to a frame body of the frame, and the plurality of suspending arms form the elastic frame. After vanes are pivotally connected to the bottom chassis, the elastic frame cancels out the vibration force produced by the rotating vanes, so as to reduce noises and enhance the life expectancy of vanes effectively.
摘要翻译： 防振风扇包括框架，底架和弹性框架。 弹性框架包括多个弯曲板状悬挂臂，每个具有第一悬臂部分。 悬挂臂部的端部在其中间部分具有弯曲形状的弯曲部分，并且弯曲部分的端部具有第二悬挂臂部分。 底部底盘包括盘体和从盘体向上延伸并连接到第一悬臂部分的多个突出肋。 第二悬挂臂部分连接到框架的框架体，并且多个悬挂臂形成弹性框架。 叶片枢转连接到底盘后，弹性框架消除了旋转叶片产生的振动力，有效降低了叶片的噪音，提高了叶片的使用寿命。
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10.发明授权High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage 有权具有用于防止泄漏并改善击穿电压的层间电介质蚀刻停止层的高压晶体管器件公开(公告)号：US07301185B2
公开(公告)日：2007-11-27
申请号：US10999508
申请日：2004-11-29
申请人： Chung-I Chen , Hsin Kuan , Zhi-Cheng Chen , Rann-Shyan Yeh , Chi-Hsuen Chang , Jun Xiu Liu , Tzu-Chiang Sung , Chia-Wei Liu , Jieh-Ting Cheng
发明人： Chung-I Chen , Hsin Kuan , Zhi-Cheng Chen , Rann-Shyan Yeh , Chi-Hsuen Chang , Jun Xiu Liu , Tzu-Chiang Sung , Chia-Wei Liu , Jieh-Ting Cheng
IPC分类号： H01L27/148 , H01L29/80 , H01L21/824
CPC分类号： H01L29/7835 , H01L21/76829 , H01L21/76832 , H01L29/0653 , H01L29/665 , H01L29/66659 , H01L29/66689 , H01L29/7816 , H01L29/7833 , H01L29/7836
摘要： A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having a resistivity greater than 10 ohm-cm, thus leakage is prevented and breakdown voltage is improved when driving a high voltage greater than 5V at the gate site. A method for fabricating the high-voltage device is compatible with current low-voltage device processes and middle-voltage device processes.
摘要翻译： 提供了一种用于后续接触孔工艺的具有层间电介质（ILD）蚀刻停止层的高压晶体管器件。 蚀刻停止层是具有大于10欧姆 - 厘米电阻率的高电阻率薄膜，因此在栅极处驱动大于5V的高电压时，可以防止泄漏并提高击穿电压。 制造高压器件的方法与当前的低压器件工艺和中压器件工艺兼容。
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