Photonic crystal device and methods
    1.
    发明申请
    Photonic crystal device and methods 失效
    光子晶体器件及方法

    公开(公告)号:US20060078268A1

    公开(公告)日:2006-04-13

    申请号:US10962825

    申请日:2004-10-08

    IPC分类号: G02B6/00

    CPC分类号: G02B6/1225 B82Y20/00

    摘要: A photonic crystal device is fabricated by a method comprising steps of providing a substrate, providing a photonic crystal on the substrate, and etching a cavity under at least the photonic crystal, the cavity having an inner wall adapted to reflect light.

    摘要翻译: 通过包括以下步骤的方法制造光子晶体器件,所述方法包括提供衬底,在衬底上提供光子晶体,以及在至少所述光子晶体之下蚀刻空腔,所述腔具有适于反射光的内壁。

    Method for forming a cantilever and tip
    3.
    发明授权
    Method for forming a cantilever and tip 失效
    形成悬臂和尖端的方法

    公开(公告)号:US07494593B1

    公开(公告)日:2009-02-24

    申请号:US10879971

    申请日:2004-06-28

    IPC分类号: C25F3/12

    CPC分类号: B81C1/0015 B81B2201/07

    摘要: A method is disclosed for forming a single crystal cantilever and tip on a substrate. The method can include the operation of defining an implant area on the substrate with a layer of photoresist. A further operation can be implanting oxygen into the substrate in the implant area to a predetermined depth to form a buried oxide layer. The buried oxide layer can define a bottom of the single crystal cantilever and tip. Another operation can involve shaping the single crystal cantilever and tip from the substrate above the buried oxide layer.

    摘要翻译: 公开了一种用于在基板上形成单晶悬臂和尖端的方法。 该方法可以包括在衬底上用光致抗蚀剂层限定植入区域的操作。 进一步的操作可以是将植入区域中的氧注入到预定深度的衬底中以形成掩埋氧化物层。 掩埋氧化物层可以限定单晶悬臂和尖端的底部。 另外的操作可以包括从掩埋氧化物层上方的衬底上形成单晶悬臂和尖端。

    Micro electrical mechanical system
    9.
    发明授权
    Micro electrical mechanical system 有权
    微机电系统

    公开(公告)号:US08497577B2

    公开(公告)日:2013-07-30

    申请号:US11870306

    申请日:2007-10-10

    IPC分类号: H01L23/12

    CPC分类号: B81B7/007 H01L2924/16235

    摘要: An apparatus includes a Micro Electrical Mechanical System (MEMS) having electrical contacts and a MEMS device in electrical communication with the electrical contacts. A lid is oriented over the MEMS device and not the electrical contacts. The lid has a base region and a top region, the base region being wider in dimension than the top region and oriented in closer proximity to the MEMS device than the top region.

    摘要翻译: 一种装置包括具有电触头的微机电系统(MEMS)和与电触头电连通的MEMS装置。 盖子定位在MEMS器件上,而不是电触头。 盖子具有基部区域和顶部区域,基底区域的尺寸比顶部区域宽,并且被定向成比顶部区域更靠近MEMS装置。

    Semiconductor package and method for making the same
    10.
    发明授权
    Semiconductor package and method for making the same 有权
    半导体封装及其制造方法

    公开(公告)号:US08368173B2

    公开(公告)日:2013-02-05

    申请号:US12795357

    申请日:2010-06-07

    IPC分类号: H01L27/08

    摘要: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a base material, a first metal layer, a first dielectric layer, a first upper electrode and a first protective layer. The first metal layer is disposed on a first surface of the base material, and includes a first inductor and a first lower electrode. The first dielectric layer is disposed on the first lower electrode. The first upper electrode is disposed on the first dielectric layer, and the first upper electrode, the first dielectric layer and the first lower electrode form a first capacitor. The first protective layer encapsulates the first inductor and the first capacitor. Whereby, the first inductor and the first lower electrode of the first capacitor are disposed on the same layer, so that the thickness of the product is reduced.

    摘要翻译: 半导体封装及其制造方法技术领域本发明涉及半导体封装及其制造方法。 半导体封装包括基底材料,第一金属层,第一介电层,第一上电极和第一保护层。 第一金属层设置在基材的第一表面上,并且包括第一电感器和第一下电极。 第一介电层设置在第一下电极上。 第一上电极设置在第一电介质层上,第一上电极,第一电介质层和第一下电极形成第一电容器。 第一保护层封装第一电感器和第一电容器。 由此,第一电容器的第一电感器和第一下电极设置在同一层上,从而减小了产品的厚度。