公开(公告)号：US09982340B2

公开(公告)日：2018-05-29

申请号：US13439127

申请日：2012-04-04

申请人： Chih-Tsung Lee ,  Hung Jui Chang ,  You-Hua Chou ,  Shiu-Ko Jangjian ,  Chung-En Kao ,  Ming-Chin Tsai ,  Huan-Wen Lai

发明人： Chih-Tsung Lee ,  Hung Jui Chang ,  You-Hua Chou ,  Shiu-Ko Jangjian ,  Chung-En Kao ,  Ming-Chin Tsai ,  Huan-Wen Lai

IPC分类号： C23C16/44 ,  C23C16/30 ,  C23C16/509 ,  H01J37/32

CPC分类号： C23C16/4412 ,  C23C16/308 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244

摘要： An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.

公开(公告)号：US09708706B2

公开(公告)日：2017-07-18

申请号：US13307242

申请日：2011-11-30

申请人： Chung-En Kao ,  Ming-Chin Tsai ,  You-Hua Chou ,  Chen-Chia Chiang ,  Chih-Tsung Lee ,  Ming-Shiou Kuo

发明人： Chung-En Kao ,  Ming-Chin Tsai ,  You-Hua Chou ,  Chen-Chia Chiang ,  Chih-Tsung Lee ,  Ming-Shiou Kuo

IPC分类号： C23C14/35 ,  H01J37/34

CPC分类号： C23C14/352 ,  H01J37/3405 ,  H01J37/3417

摘要： A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.

公开(公告)号：US20140054653A1

公开(公告)日：2014-02-27

申请号：US13594254

申请日：2012-08-24

申请人： Min Hao Hong ,  You-Hua Chou ,  Chih-Tsung Lee ,  Shiu-Ko JangJian ,  Miao-Cheng Liao ,  Hsiang-Hsiang Ko ,  Chen-Ming Huang

发明人： Min Hao Hong ,  You-Hua Chou ,  Chih-Tsung Lee ,  Shiu-Ko JangJian ,  Miao-Cheng Liao ,  Hsiang-Hsiang Ko ,  Chen-Ming Huang

IPC分类号： H01L29/04 ,  H01L21/762

CPC分类号： H01L21/76224 ,  H01L21/02538 ,  H01L21/02609 ,  H01L21/0334 ,  H01L21/31053 ,  H01L21/762 ,  H01L21/76232 ,  H01L21/823412 ,  H01L21/823481 ,  H01L29/0653 ,  H01L29/66477 ,  H01L29/66651 ,  H01L29/78

摘要： An integrated circuit device and a process for making the integrated circuit device. The integrated circuit device including a substrate having a trench formed therein, a first layer of isolation material occupying the trench, a second layer of isolation material formed over the first layer of isolation material, an epitaxially-grown silicon layer on the substrate and horizontally adjacent the second layer of isolation material, and a gate structure formed on the epitaxially-grown silicon, the gate structure defining a channel.

摘要翻译： 集成电路器件和用于制造集成电路器件的工艺。 集成电路器件包括其中形成有沟槽的衬底，占据沟槽的隔离材料的第一层，在第一隔离材料层上形成的隔离材料的第二层，衬底上的外延生长的硅层，并且水平相邻 第二层隔离材料，以及形成在外延生长的硅上的栅极结构，栅极结构限定沟道。

公开(公告)号：US08692299B2

公开(公告)日：2014-04-08

申请号：US13594254

申请日：2012-08-24

申请人： Min Hao Hong ,  You-Hua Chou ,  Chih-Tsung Lee ,  Shiu-Ko JangJian ,  Miao-Cheng Liao ,  Hsiang Hsiang Ko ,  Chen-Ming Huang

发明人： Min Hao Hong ,  You-Hua Chou ,  Chih-Tsung Lee ,  Shiu-Ko JangJian ,  Miao-Cheng Liao ,  Hsiang Hsiang Ko ,  Chen-Ming Huang

IPC分类号： H01L27/085

CPC分类号： H01L21/76224 ,  H01L21/02538 ,  H01L21/02609 ,  H01L21/0334 ,  H01L21/31053 ,  H01L21/762 ,  H01L21/76232 ,  H01L21/823412 ,  H01L21/823481 ,  H01L29/0653 ,  H01L29/66477 ,  H01L29/66651 ,  H01L29/78

摘要： An integrated circuit device and a process for making the integrated circuit device. The integrated circuit device including a substrate having a trench formed therein, a first layer of isolation material occupying the trench, a second layer of isolation material formed over the first layer of isolation material, an epitaxially-grown silicon layer on the substrate and horizontally adjacent the second layer of isolation material, and a gate structure formed on the epitaxially-grown silicon, the gate structure defining a channel.

摘要翻译： 集成电路器件和用于制造集成电路器件的工艺。 集成电路器件包括其中形成有沟槽的衬底，占据沟槽的隔离材料的第一层，在第一隔离材料层上形成的隔离材料的第二层，衬底上的外延生长的硅层，并且水平相邻 第二层隔离材料，以及形成在外延生长的硅上的栅极结构，栅极结构限定沟道。

公开(公告)号：US08953298B2

公开(公告)日：2015-02-10

申请号：US13307089

申请日：2011-11-30

申请人： Chung-En Kao ,  You-Hua Chou ,  Chih-Tsung Lee ,  Ming-Shiou Kuo

发明人： Chung-En Kao ,  You-Hua Chou ,  Chih-Tsung Lee ,  Ming-Shiou Kuo

IPC分类号： H01L21/683 ,  H01T23/00

CPC分类号： H01L21/6831 ,  H01L21/67742

摘要： A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment.

摘要翻译： 工件传送系统具有多个具有轴承和初级和次级变压器线圈的接头，其中提供给每个接头的初级变压器线圈和次级变压器线圈的功率在相应接头的主变压器线圈和次级变压器线圈之间产生互感。 第一对臂通过第一对接头可旋转地联接到叶片，其中第一对接头中的每一个的主变压器线圈可操作地耦合到第一对臂，并且每个臂的次级变压器线圈 第一对接头可操作地联接到叶片和位于叶片的介电工件保持表面下方的电极。 电极通过接头的变压器线圈非接触地通电，并且刀片可以通过反向电流方向和电压调节来夹紧和去夹紧工件。

公开(公告)号：US20130135784A1

公开(公告)日：2013-05-30

申请号：US13307089

申请日：2011-11-30

申请人： Chung-En Kao ,  You-Hua Chou ,  Chih-Tsung Lee ,  Ming-Shiou Kuo

发明人： Chung-En Kao ,  You-Hua Chou ,  Chih-Tsung Lee ,  Ming-Shiou Kuo

IPC分类号： B25J11/00 ,  H01L21/687 ,  B25J15/00 ,  B25J17/00 ,  B25J18/00

CPC分类号： H01L21/6831 ,  H01L21/67742

摘要： A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment.

摘要翻译： 工件传送系统具有多个具有轴承和初级和次级变压器线圈的接头，其中提供给每个接头的初级变压器线圈和次级变压器线圈的功率在相应接头的主变压器线圈和次级变压器线圈之间产生互感。 第一对臂通过第一对接头可旋转地联接到叶片，其中第一对接头中的每一个的主变压器线圈可操作地耦合到第一对臂，并且每个臂的次级变压器线圈 第一对接头可操作地联接到叶片和位于叶片的介电工件保持表面下方的电极。 电极通过接头的变压器线圈非接触地通电，并且刀片可以通过反向电流方向和电压调节来夹紧和去夹紧工件。

公开(公告)号：US20130147046A1

公开(公告)日：2013-06-13

申请号：US13313542

申请日：2011-12-07

申请人： Hung Jui Chang ,  Chih-Tsung Lee ,  You-Hua Chou ,  Shiu-Ko Jang Jian ,  Ming-Shiou Kuo

发明人： Hung Jui Chang ,  Chih-Tsung Lee ,  You-Hua Chou ,  Shiu-Ko Jang Jian ,  Ming-Shiou Kuo

IPC分类号： H01L23/48 ,  H01L23/538

CPC分类号： H01L21/764 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor body and a low K dielectric layer overlying the semiconductor body. A first portion of the low K dielectric layer comprises a dielectric material, and a second portion of the low K dielectric layer comprise an air gap, wherein the first portion and the second portion are laterally disposed with respect to one another. A method for forming a low K dielectric layer is also disclosed and includes forming a dielectric layer over a semiconductor body, forming a plurality of air gaps laterally disposed from one another in the dielectric layer, and forming a capping layer over the dielectric layer and air gaps.

摘要翻译： 半导体器件包括半导体本体和覆盖半导体本体的低K电介质层。 低K电介质层的第一部分包括电介质材料，低K电介质层的第二部分包括气隙，其中第一部分和第二部分相对于彼此横向设置。 还公开了一种用于形成低K电介质层的方法，包括在半导体本体上形成电介质层，在电介质层中形成彼此横向设置的多个气隙，并在电介质层和空气上形成覆盖层 差距

公开(公告)号：US08624394B2

公开(公告)日：2014-01-07

申请号：US13313542

申请日：2011-12-07

申请人： Hung Jui Chang ,  Chih-Tsung Lee ,  You-Hua Chou ,  Shiu-Ko Jang Jian ,  Ming-Shiou Kuo

发明人： Hung Jui Chang ,  Chih-Tsung Lee ,  You-Hua Chou ,  Shiu-Ko Jang Jian ,  Ming-Shiou Kuo

IPC分类号： H01L23/48

CPC分类号： H01L21/764 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor body and a low K dielectric layer overlying the semiconductor body. A first portion of the low K dielectric layer comprises a dielectric material, and a second portion of the low K dielectric layer comprise an air gap, wherein the first portion and the second portion are laterally disposed with respect to one another. A method for forming a low K dielectric layer is also disclosed and includes forming a dielectric layer over a semiconductor body, forming a plurality of air gaps laterally disposed from one another in the dielectric layer, and forming a capping layer over the dielectric layer and air gaps.

摘要翻译： 半导体器件包括半导体本体和覆盖半导体本体的低K电介质层。 低K电介质层的第一部分包括电介质材料，低K电介质层的第二部分包括气隙，其中第一部分和第二部分相对于彼此横向设置。 还公开了一种用于形成低K电介质层的方法，包括在半导体本体上形成电介质层，在电介质层中形成彼此横向设置的多个气隙，并在电介质层和空气上形成覆盖层 差距

公开(公告)号：US08916480B2

公开(公告)日：2014-12-23

申请号：US13313106

申请日：2011-12-07

申请人： Ming-Shiou Kuo ,  Chih-Tsung Lee ,  You-Hua Chou ,  Ming-Chin Tsai ,  Chia-Ho Chen ,  Chin-Hsiang Lin

发明人： Ming-Shiou Kuo ,  Chih-Tsung Lee ,  You-Hua Chou ,  Ming-Chin Tsai ,  Chia-Ho Chen ,  Chin-Hsiang Lin

IPC分类号： H01L21/31

CPC分类号： C23C16/44 ,  C23C16/45565

摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.

摘要翻译： 本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。 一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓 。 组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。

公开(公告)号：US20130149871A1

公开(公告)日：2013-06-13

申请号：US13313106

申请日：2011-12-07

申请人： Ming-Shiou Kuo ,  Chih-Tsung Lee ,  You-Hua Chou ,  Ming-Chin Tsai ,  Chia-Ho Chen ,  Chin-Hsiang Lin

发明人： Ming-Shiou Kuo ,  Chih-Tsung Lee ,  You-Hua Chou ,  Ming-Chin Tsai ,  Chia-Ho Chen ,  Chin-Hsiang Lin

IPC分类号： H01L21/02 ,  C23C16/455

CPC分类号： C23C16/44 ,  C23C16/45565

摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.

摘要翻译： 本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。 一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓 。 组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。