公开(公告)号：US06296714B1

公开(公告)日：2001-10-02

申请号：US09004199

申请日：1998-01-08

申请人： Chizuko Matsuo ,  Mikio Kishimoto ,  Kazushige Takaishi

发明人： Chizuko Matsuo ,  Mikio Kishimoto ,  Kazushige Takaishi

IPC分类号： B08B704

CPC分类号： H01L21/02052

摘要： Disclosed is a washing solution of a semiconductor substrate which comprises 0.0001 to 0.1% by weight of an organic acid and 0.005 to 0.25 % by weight of hydrofluoric acid and has pH of 2 to 4. When a contaminated substrate is immersed in a washing solution, a naturally oxidized film on the surface of the substrate is removed by hydrofluoric acid, and fine particles on the film, metal impurities and metal impurities in the film transfer to the liquid. Since the washing solution is an acidic solution containing an organic acid and having pH of 2 to 4, fine particles are charged to minus as those of the fine particles, and the metal impurities ions in the liquid becomes minus complex ions due to complexing effect of the organic acid. As the results, surface potentials of the respective fine particles and metal impurities are each minus which is the same as that of surface potential of the substrate so that adhesion or re-adhesion to the substrate can be prevented.

摘要翻译： 公开了一种半导体基板的洗涤液，其包含0.0001〜0.1重量％的有机酸和0.005〜0.25重量％的氢氟酸，pH为2〜4。当将污染的基材浸渍在洗涤溶液中时， 通过氢氟酸去除衬底表面上的自然氧化膜，膜上的细颗粒，金属杂质和金属杂质转移到液体中。 由于洗涤液是含有有机酸的pH为2〜4的酸性溶液，所以将微粒加入到微细粒子的负极上，由于络合作用使液体中的金属杂质离子变成负的复数离子 有机酸。 结果，各微细颗粒和金属杂质的表面电位各自为负，与基板的表面电位相同，从而可以防止对基板的粘合或再附着。

公开(公告)号：US07998867B2

公开(公告)日：2011-08-16

申请号：US12740441

申请日：2008-11-06

申请人： Kazushige Takaishi ,  Tomonori Miura

发明人： Kazushige Takaishi ,  Tomonori Miura

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/4401 ,  C30B25/12 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/68757

摘要： An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased.

摘要翻译： 提供了能够消除器件工艺中的颗粒的外延晶片，颗粒是从晶片的后表面和倒角表面之间的边界区域中的划痕产生的。 在刮除过程中，在后表面和倒角表面之间的边界区域中的划痕被去除。 因此，在器件工艺中浸渍在蚀刻溶液中时，由划痕引起的颗粒不存在，从而提高了器件的产率。

公开(公告)号：US20100261341A1

公开(公告)日：2010-10-14

申请号：US12740441

申请日：2008-11-06

申请人： Kazushige Takaishi ,  Tomonori Miura

发明人： Kazushige Takaishi ,  Tomonori Miura

IPC分类号： H01L21/20

CPC分类号： C23C16/4401 ,  C30B25/12 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/68757

摘要： An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased.

摘要翻译： 提供了能够消除器件工艺中的颗粒的外延晶片，颗粒是从晶片的后表面和倒角表面之间的边界区域中的划痕产生的。 在刮除过程中，在后表面和倒角表面之间的边界区域中的划痕被去除。 因此，在器件工艺中浸渍在蚀刻溶液中时，由划痕引起的颗粒不存在，从而提高了器件的产率。

公开(公告)号：US20090304490A1

公开(公告)日：2009-12-10

申请号：US12135805

申请日：2008-06-09

申请人： Takayuki Kihara ,  Masataka Hourai ,  Yuki Murata ,  Kazushige Takaishi ,  Seiji Sugimoto ,  Tadashi Kanda

发明人： Takayuki Kihara ,  Masataka Hourai ,  Yuki Murata ,  Kazushige Takaishi ,  Seiji Sugimoto ,  Tadashi Kanda

IPC分类号： H01L21/67

CPC分类号： H01L21/6732

摘要： The present invention is directed to provide a method for holding a silicon wafer, which can reduce contact scratches in contact with support members when holding a back surface of the silicon wafer, as well as prevent the wafer from bending when holding the back surface of the silicon wafer. The back surface of a silicon wafer of 300 millimeters or more in diameter and 700 micrometers to 1000 micrometers in thickness is held in contact with a support member or a suction member, specifically held within a region where a radius of the silicon wafer×0.50 to 0.80 from a center thereof. The silicon wafer is held in a state where the maximum amount of displacement within a wafer plane is 300 micrometers or less. The silicon wafer back surface is held in contact within the holding region in all the processes of holding the back surface of the silicon wafer in contact with the support member or the suction member.

摘要翻译： 本发明的目的在于提供一种保持硅晶片的方法，当保持硅晶片的背面时，可以减少与支撑部件接触的接触划痕，并且当保持硅晶片的背面时，防止晶片弯曲 硅晶片。 直径为300毫米，厚度为700微米至1000微米的硅晶片的背面保持与支撑构件或抽吸构件接触，特别是保持在硅晶片的半径为0.50至 0.80从其中心。 硅晶片保持在晶片平面内的最大位移量为300微米以下的状态。 在保持硅晶片的背面与支撑构件或抽吸构件接触的所有过程中，硅晶片背面保持在保持区域内。

公开(公告)号：US20090042390A1

公开(公告)日：2009-02-12

申请号：US11836493

申请日：2007-08-09

申请人： Sakae Koyata ,  Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi

发明人： Sakae Koyata ,  Takeo Katoh ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi

IPC分类号： H01L21/302 ,  C09K13/08

CPC分类号： H01L21/30608 ,  C09K13/02 ,  C09K13/08 ,  H01L21/02019

摘要： It is possible to reduce workloads of a both-side simultaneous polishing process or a single-side polishing process, and to achieve both of the maintenance of the wafer flatness and the reduction in wafer front side roughness upon completing a flattening process. A method for manufacturing silicon wafers according to the present invention includes a flattening process 13 of grinding or lapping front and back sides of a thin disc-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process of immersing the silicon wafer in an etchant for controlling a silicon wafer surface shape in which a fluorochemical surfactant is uniformly mixed in an alkaline aqueous solution to etch the front and back sides of the silicon wafer, and a both-side simultaneous polishing process 16 of simultaneously polishing the front and back sides of the etched silicon wafer or a single-side polishing process of polishing the front and back sides of the etched wafer for every side, in this order.

摘要翻译： 可以减少双面同时抛光工艺或单面抛光工艺的工作量，并且在完成平坦化处理时实现晶片平整度的维持和晶片正面粗糙度的降低。 根据本发明的硅晶片的制造方法包括：通过对硅单晶锭进行切片而得到的薄片状硅晶片的正面和背面进行研磨或研磨的平坦化工艺13，将硅晶片浸入的蚀刻工艺 用于控制硅晶片表面形状的蚀刻剂，其中含氟表面活性剂在碱性水溶液中均匀混合以蚀刻硅晶片的正面和背面;以及双面同时抛光工艺16，同时抛光前后 蚀刻的硅晶片的侧面或者对于每一侧抛光蚀刻后的晶片的正面和背面的单面抛光工艺。

公开(公告)号：US20070298614A1

公开(公告)日：2007-12-27

申请号：US11893538

申请日：2007-08-15

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/306

CPC分类号： H01L21/6708 ,  H01L21/67075 ,  Y10S134/902

摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

摘要翻译： 用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。 晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。 提供在晶片上的蚀刻流体通过晶片的旋转而扩展。 蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸， 吸气装置

公开(公告)号：US20070119817A1

公开(公告)日：2007-05-31

申请号：US10562236

申请日：2004-10-28

申请人： Sakae Koyata ,  Kazushige Takaishi

发明人： Sakae Koyata ,  Kazushige Takaishi

IPC分类号： C03C15/00 ,  H01L21/302 ,  C23F1/00 ,  B44C1/22

CPC分类号： H01L21/30604 ,  H01L21/02019

摘要： The manufacturing method of a silicon wafer of the present invention includes an etching process (14) storing acid etching solution and alkali etching solution in plural etching tanks, respectively, and immersing a silicon wafer gone through a lapping process and having degraded superficial layers in the acid etching solution and the alkali etching solution in order so as to remove the degraded superficial layers; and a double surface polishing process (16) to simultaneously polish the front and rear surfaces of the wafer after the etching process; wherein sodium hydroxide aqueous solution of 40 to 60 percent by weight is used in the alkali etching solution of the etching process, and the polishing removal depth A in the wafer front surface is made 5 to 10 μm in the double surface simultaneous polishing process, and the polishing removal depth B in the rear surface is made 2 to 6 μm, and a difference (A-B) between the polishing removal depth A and the polishing removal depth B is made 3 to 4 μm. The manufacturing method of the present invention provides a silicon wafer, in which both sides of the wafer have a highly accurate flatness and small surface roughness, and moreover, which is a single surface mirror-polished wafer with the front and rear surfaces of the wafer identifiable by visual observation, and excellent in flatness when held by a stepper chuck and the like.

摘要翻译： 本发明的硅晶片的制造方法包括在多个蚀刻槽中分别存储酸蚀刻溶液和碱蚀刻液的蚀刻工序（14），将通过研磨工序的硅晶片浸渍在上述 酸蚀溶液和碱蚀刻溶液，以便除去降解的表面层; 和双面抛光工艺（16），以在蚀刻工艺之后同时抛光晶片的前表面和后表面; 其中在蚀刻工艺的碱蚀刻溶液中使用40〜60重量％的氢氧化钠水溶液，在双面同时研磨工序中，晶片正面的研磨去除深度A为5〜10μm， 后表面的抛光去除深度B为2〜6μm，抛光去除深度A和抛光去除深度B之间的差（AB）为3〜4μm。 本发明的制造方法提供了一种硅晶片，其中晶片的两侧具有高精度的平坦度和较小的表面粗糙度，此外，其是具有晶片的前表面和后表面的单面镜面抛光晶片 通过目视观察可以识别，并且当由步进卡盘等保持时具有优异的平坦度。

公开(公告)号：US20050148181A1

公开(公告)日：2005-07-07

申请号：US10957026

申请日：2004-10-01

申请人： Sakae Koyata ,  Kazushige Takaishi ,  Tohru Taniguchi ,  Kazuo Fujimaki

发明人： Sakae Koyata ,  Kazushige Takaishi ,  Tohru Taniguchi ,  Kazuo Fujimaki

IPC分类号： H01L21/304 ,  B24B37/04 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC分类号： C30B29/06 ,  B24B37/042 ,  C30B33/10 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/30608

摘要： Provided is a method for producing a silicon wafer those surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear surfaces, the method comprising a slicing step of slicing a single-crystal ingot into thin disc-like wafers, a chamfering step of chamfering the wafer, a lapping step for flattening the chamfered wafer, a mild lapping step for abrading away part of processing distortions on the rear surface of the wafer left after chamfering and lapping, a rear-surface mild polishing step for abrading away part of roughness on the rear surface of the wafer, an etching step for alkali-etching the remains of processing distortions on the front and rear surfaces of the wafer, a mirror-polishing step for mirror-polishing the surface of the etched wafer, and a cleaning step for cleaning the mirror-polished wafer.

摘要翻译： 提供一种硅晶片的制造方法，其表面具有精确的平坦度和微小的表面粗糙度，并且能够在前后表面之间进行目视辨别，该方法包括将单晶锭切割成薄盘状的切片工序， 用于倒角晶片的倒角步骤，用于使倒角晶片平坦化的研磨步骤，用于在倒角和研磨后留下的晶片背面上的部分加工变形的研磨，温和研磨步骤，后表面温和抛光 用于研磨晶片后表面上的粗糙部分的步骤，用于碱蚀刻晶片的前表面和后表面上的加工变形残余物的蚀刻步骤，用于镜面抛光晶片表面的镜面抛光步骤 蚀刻晶片，以及用于清洁镜面抛光晶片的清洁步骤。

公开(公告)号：US20050112893A1

公开(公告)日：2005-05-26

申请号：US10957030

申请日：2004-10-01

申请人： Sakae Koyata ,  Kazushige Takaishi ,  Tohru Taniguchi ,  Kazuo Fujimaki ,  Akihiro Kudo ,  Masashi Norimoto

发明人： Sakae Koyata ,  Kazushige Takaishi ,  Tohru Taniguchi ,  Kazuo Fujimaki ,  Akihiro Kudo ,  Masashi Norimoto

IPC分类号： H01L21/304 ,  B24B37/04 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC分类号： C30B29/06 ,  B24B37/042 ,  C30B33/10 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/30608

摘要： Provided is an improved method for producing a silicon wafer whose surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear surfaces, the method comprising a slicing step of slicing a single-crystal ingot into thin disc-like wafers, a chamfering step of chamfering the wafer, a lapping step for flattening the wafer, an etching step for removing processing distortions on the wafer surfaces, a mirror-polishing step for mirror-polishing the surface of the wafer, and a cleaning step for cleaning the wafer. The etching step further comprises a first acid-etching phase and a second alkali-etching phase, and a rear surface mild polishing step is introduced between the first and second etching phases in order to abrade part of roughness formed on the rear surface of the wafer as a result of the first etching phase.

摘要翻译： 提供了一种用于制造表面精确平坦度和微小表面粗糙度的硅晶片的改进方法，并且其允许在视觉上区分前表面和后表面，该方法包括将单晶锭切割成薄盘的切片步骤 用于使晶片倒角的研磨步骤，用于使晶片平坦化的研磨步骤，用于去除晶片表面上的加工变形的蚀刻步骤，用于镜面抛光晶片表面的镜面抛光步骤以及清洁 清洁晶圆的步骤。 蚀刻步骤还包括第一酸腐蚀相和第二碱蚀刻相，并且在第一和第二蚀刻相之间引入后表面温和的抛光步骤，以便研磨形成在晶片的后表面上的部分粗糙度 作为第一蚀刻阶段的结果。

公开(公告)号：US08900033B2

公开(公告)日：2014-12-02

申请号：US13261294

申请日：2010-11-30

申请人： Kazushige Takaishi ,  Keiichi Takanashi ,  Tetsurou Taniguchi ,  Shinichi Ogata ,  Shunsuke Mikuriya

发明人： Kazushige Takaishi ,  Keiichi Takanashi ,  Tetsurou Taniguchi ,  Shinichi Ogata ,  Shunsuke Mikuriya

IPC分类号： B24B1/00

CPC分类号： H01L21/02024 ,  B24B37/013 ,  B24B37/042 ,  B24B37/08

摘要： An object of the present invention is to provide a method of polishing silicon wafers, capable of suppressing generation of undesired sounds from carriers and reducing the thickness variation of the wafers after polished.The method is a wafer polishing method in which wafers 20 are polished by supplying a polishing solution to surfaces 30a of a pair of polishing pads 30 positioned above and below carriers 10 each having a circular hole 11 for retaining the wafers 20, the carriers 10 being thinner than the wafers 20; and sliding the polishing pads 30 relatively to the carriers 10, thereby simultaneously polishing both surfaces of the wafers 20 retained in the carriers 10. The method is characterized in that information sourced from the carriers 10 when a difference between the thickness of the carriers 10 and the thickness of the wafers 20 reaches a predetermined value is detected to calculate the thickness of the wafers 20, thereby terminating polishing.

摘要翻译： 本发明的目的是提供一种抛光硅晶片的方法，其能够抑制来自载体的不期望的声音的产生并且减少抛光后晶片的厚度变化。 该方法是晶片抛光方法，其中通过将抛光溶液提供给位于载体10上方和下方的一对抛光垫30的表面30a进行研磨，每个抛光垫具有用于保持晶片20的圆形孔11，载体10为 比晶片20薄; 并且相对于载体10滑动抛光垫30，从而同时抛光保留在载体10中的晶片20的两个表面。该方法的特征在于，当载体10的厚度和载体10的厚度之间的差异 检测晶片20的厚度达到预定值，以计算晶片20的厚度，从而终止抛光。