Semiconductor lasers
    1.
    发明授权
    Semiconductor lasers 有权
    半导体激光器

    公开(公告)号:US07310358B2

    公开(公告)日:2007-12-18

    申请号:US11015990

    申请日:2004-12-17

    IPC分类号: H01S3/10 H01S5/00 H01S3/14

    摘要: Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures. Exemplary differences include that one laser's semiconductor structure can have an isolated area that does not receive electrical current from a covering conductive layer; conductive layers of two layers can have different thicknesses or lengths; one laser can have a patterned layer with high electrical resistance between its semiconductor structure and a conductive layer; or one laser's semiconductor structure can include regions of high electrical resistance adjacent its contact structure.

    摘要翻译: 诸如激光结构的激光器可以包括两个或更多个半导体结构,其基本相同或包括相同的半导体材料并具有基本上相同的几何形状,例如紧密间隔的双点双光束或四点四光束, 光束激光器。 激光器还可以包括不同结构的电流或接触结构或不同的波长控制结构。 例如,电流或接触结构可以被不同地构造以防止或以其他方式影响锁相,例如通过引起不同的阈值电流和不同的工作温度。 示例性差异包括一个激光器的半导体结构可以具有不从覆盖导电层接收电流的隔离区域; 两层的导电层可以具有不同的厚度或长度; 一个激光器可以具有在其半导体结构和导电层之间具有高电阻的图案层; 或者一个激光器的半导体结构可以包括邻近其接触结构的高电阻的区域。

    Fabrication of quantum confinement semiconductor light-emitting devices
    9.
    发明授权
    Fabrication of quantum confinement semiconductor light-emitting devices 失效
    量子限制半导体发光器件的制造

    公开(公告)号:US5607876A

    公开(公告)日:1997-03-04

    申请号:US581287

    申请日:1995-12-29

    摘要: The present invention consists of an electroluminescent structure and method of fabrication of that structure in materials which have an indirect bandgap in their bulk form. The processing steps can all be standard VLSI methods. Quantum columns, quantum wires or quantum dots may be formed, for example in an array, by masking, reactive ion etching and oxidation. When the semiconductor core is sufficiently thin, quantum mechanical confinement effects raise the energy and the radiative recombination efficiency of injected carriers. Tuning the core diameters allows selection of individual or multiple wavelength emission bands.

    摘要翻译: 本发明包括一种电致发光结构和在其体积形式具有间接带隙的材料中制造该结构的方法。 处理步骤都可以是标准的VLSI方法。 量子列,量子线或量子点可以例如通过掩模,反应离子蚀刻和氧化形成阵列。 当半导体芯足够薄时,量子力学限制效应提高了注入载体的能量和辐射复合效率。 调整核心直径允许选择单个或多个波长发射波段。

    Imaging system for patterning of an image definition material by electro-wetting and methods therefor
    10.
    发明授权
    Imaging system for patterning of an image definition material by electro-wetting and methods therefor 有权
    通过电润湿对图像定义材料进行图案化的成像系统及其方法

    公开(公告)号:US09529307B2

    公开(公告)日:2016-12-27

    申请号:US13548155

    申请日:2012-07-12

    IPC分类号: G03G15/10 G03G15/22 G03G13/28

    摘要: A system comprises an electro-wetting subsystem, a transfer subsystem, an imaging member, and an inking subsystem. The electro-wetting subsystem comprises a photo-responsive photoreceptor, a charging mechanism, an image definition material reservoir, a charge erase mechanism, and an exposure subsystem, such as a light source and rotating polygon forming a raster output scanner (ROS) disposed for exposure of the photoreceptor through the image definition material reservoir. The imaging member comprises a reimageable surface having certain properties, such as having a low surface energy to promote ink release onto a substrate. In operation, the photoreceptor is charged areawise. An exposure pattern is formed by the exposure subsystem on the surface of the charged photoreceptor, which is developed with image definition material. The image definition material pattern is transferred to the reimageable surface. The pattern is developed with ink. The inked image may be transferred to a substrate.

    摘要翻译: 系统包括电润湿子系统,传输子系统,成像构件和着墨子系统。 电润湿子系统包括光响应感光体,充电机构,图像定义材料储存器,电荷擦除机构和曝光子系统,例如形成光栅输出扫描器(ROS)的光源和旋转多边形,其设置用于 通过图像定义材料储存器曝光感光体。 成像构件包括具有某些特性的可再成像表面,例如具有低表面能以促进油墨释放到基底上。 在操作中,感光体面积充电。 通过曝光子系统在带图像定义材料显影的带电感光体的表面上形成曝光图案。 图像定义材料图案被转移到可再成像的表面。 该图案是用墨水开发的。 着墨的图像可以被转印到基底上。