摘要:
A locally-outcoupled optical resonator has whispering gallery modes existing in a nearly circular resonator. Light is outcoupled by providing a local perturbing feature on the perimeter of the locally-outcoupled cavity resonator. The perturbing feature provides an outcoupling or loss mechanism that asymmetrically interacts with circulating whispering gallery modes, thereby making the resonator capable of uni-directional output.
摘要:
A grating-outcoupled microcavity disk resonator has whispering gallery modes existing in a nearly circular resonator. Light is outcoupled by providing a grating region in the plane of the grating-outcoupled microcavity disk resonator. The grating region provides an outcoupling or loss mechanism that symmetrically interacts with the clockwise and counterclockwise whispering gallery modes, thereby making the resonator capable of surface emission.
摘要:
Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures. Exemplary differences include that one laser's semiconductor structure can have an isolated area that does not receive electrical current from a covering conductive layer; conductive layers of two layers can have different thicknesses or lengths; one laser can have a patterned layer with high electrical resistance between its semiconductor structure and a conductive layer; or one laser's semiconductor structure can include regions of high electrical resistance adjacent its contact structure.
摘要:
Method and structure for nitride-based laser diode arrays on a conducting substrate are disclosed. Air-bridge structures are used to make compact laser diode arrays suitable for printer applications. The use of a channel structure architecture allows the making of surface emitting laser diode arrays.
摘要:
Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substrate and a laser pulse directed through the transparent sapphire detaches the gallium nitride layers from the sapphire substrate. The gallium nitride layers are then detached from the support substrate forming freestanding gallium nitride substrates.
摘要:
A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.
摘要:
A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.
摘要:
A compact sensor for detecting the presence of biological or chemical species includes a microdisk laser and a wavelength shift detector. The microdisk laser is coated with a biological or chemical recognition element, which binds preferentially with a target analyte. Because the recognition element and the target analyte adhere to the sidewall surface of the microdisk laser, they increase the effective diameter of the laser, which shifts the output wavelength by a detectable amount. The presence of a wavelength shift indicates the presence of the target analyte, and the magnitude of the wavelength shift corresponds to the mass load of the target analyte on the sidewall surface of the microdisk laser.
摘要:
A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.
摘要:
A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater than the bandgap in the active region of the InGaAsN laser. The increased bandgap reduces absorption of light in the facet and the associated heating that results.