公开(公告)号：US08008745B2

公开(公告)日：2011-08-30

申请号：US11835583

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Jonathan W. Ward ,  Frank Guo ,  Steven L. Konsek ,  Mitchell Meinhold

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Jonathan W. Ward ,  Frank Guo ,  Steven L. Konsek ,  Mitchell Meinhold

IPC分类号： H01L23/52

CPC分类号： B82Y10/00 ,  G11C13/025 ,  G11C17/14 ,  G11C17/143 ,  G11C17/16 ,  G11C17/165 ,  G11C17/18 ,  G11C2213/19 ,  H01L23/5256 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/943 ,  H01L2924/00

摘要： A non-volatile latch circuit is provided. The non-volatile latch circuit includes a nanotube switching element capable of switching between resistance states and non-volatilely retaining the resistance state. The non-volatile latch circuit includes a volatile latch circuit is capable of receiving and volatilely storing a logic state. When the nanotube switching element is a resistance state, the volatile latch circuit retains a corresponding logic state and outputs that corresponding logic state at an output terminal. A non-volatile register file configuration circuit for use with a plurality of non-volatile register files is also provided. The non-volatile register file configuration circuit includes a selection circuitry and a plurality of nanotube fuse elements, each in electrical communication with one of a plurality of non-volatile register files. The selection circuitry is capable of applying electrical stimulus to each of the selected nanotube fuse elements to selectively bypass the corresponding register file.

摘要翻译： 提供非易失性锁存电路。 非易失性锁存电路包括能够在电阻状态之间切换并且非易失性地保持电阻状态的纳米管开关元件。 非易失性锁存电路包括易失性锁存电路，其能够接收和不稳定地存储逻辑状态。 当纳米管开关元件为电阻状态时，易失性锁存电路保持相应的逻辑状态，并在输出端输出相应的逻辑状态。 还提供了与多个非易失性寄存器文件一起使用的非易失性寄存器文件配置电路。 非易失性寄存器文件配置电路包括选择电路和多个纳米管熔丝元件，每个纳米管熔丝元件与多个非易失性寄存器文件中的一个电气通信。 选择电路能够对每个选定的纳米管熔丝元件施加电刺激以选择性地绕过相应的寄存器文件。

公开(公告)号：US08102018B2

公开(公告)日：2012-01-24

申请号：US11835612

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Jonathan W. Ward ,  Frank Guo ,  Steven L. Konsek ,  Mitchell Meinhold

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Jonathan W. Ward ,  Frank Guo ,  Steven L. Konsek ,  Mitchell Meinhold

IPC分类号： G11C11/56 ,  G11C5/00 ,  H01L29/00

CPC分类号： B82Y10/00 ,  G11C11/56 ,  G11C13/003 ,  G11C13/025 ,  G11C19/00 ,  G11C29/86 ,  G11C2213/19 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206

摘要： A non-volatile resistive memory is provided. The memory includes at least one non-volatile memory cell and selection circuitry. Each memory cell has a two-terminal nanotube switching device having and a nanotube fabric article disposed between and in electrical communication with two conductive terminals. Selection circuitry is operable to select the two-terminal nanotube switching device for read and write operations. Write control circuitry, responsive to a control signal, supplies write signals to a selected memory cell to induce a change in the resistance of the nanotube fabric article, the resistance corresponding to an informational state of the memory cell. Resistance sensing circuitry in communication with a selected nonvolatile memory cell, senses the resistance of the nanotube fabric article and provides the control signal to the write control circuitry. Read circuitry reads the corresponding informational state of the memory cell.

摘要翻译： 提供了非易失性电阻性存储器。 存储器包括至少一个非易失性存储单元和选择电路。 每个存储单元具有两端纳米管切换装置，其具有设置在两个导电端子之间并与两个导电端子电连通的纳米管织物制品。 选择电路可操作以选择用于读和写操作的两端纳米管切换装置。 响应于控制信号的写控制电路向所选存储单元提供写入信号，以引起纳米管织物物品的电阻变化，该电阻对应于存储单元的信息状态。 与所选择的非易失性存储器单元通信的电阻感测电路感测纳米管织物制品的电阻并将控制信号提供给写入控制电路。 读取电路读取存储单元的相应信息状态。

公开(公告)号：US08513768B2

公开(公告)日：2013-08-20

申请号：US11835651

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： H01L23/52

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  H01L21/8221 ,  H01L23/5256 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.

摘要翻译： 在一个方面，非挥发性纳米管二极管器件包括第一和第二端子; 包括阴极和阳极的半导体元件，并且能够响应于施加到第一导电端子的电刺激而在阴极和阳极之间形成导电路径; 以及纳米管开关元件，其包括与所述半导体元件电连通的纳米管织物制品，所述纳米管织物制品设置在所述半导体元件和所述第二端子之间，并且能够形成所述第一和第二端子之间的电刺激， 多个逻辑状态。

公开(公告)号：US08013363B2

公开(公告)日：2011-09-06

申请号：US11835759

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： H01L27/10

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  H01L21/8221 ,  H01L23/5256 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： Under one aspect, a nonvolatile nanotube diode includes: a substrate; a semiconductor element disposed over the substrate, the semiconductor element having an anode and a cathode and capable of forming an electrically conductive pathway between the anode and the cathode; a nanotube switching element disposed over the semiconductor element, the nanotube switching element including a conductive contact and a nanotube fabric element capable of a plurality of resistance states; and a conductive terminal disposed in spaced relation to the conductive contact, wherein the nanotube fabric element is interposed between and in electrical communication with the conductive contact and the conductive contact is in electrical communication with the cathode, and wherein in response to electrical stimuli applied to the anode and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the anode and the conductive terminal.

摘要翻译： 在一个方面，非易失性纳米管二极管包括：基板; 设置在所述衬底上的半导体元件，所述半导体元件具有阳极和阴极，并且能够在所述阳极和所述阴极之间形成导电通路; 设置在所述半导体元件上的纳米管开关元件，所述纳米管开关元件包括导电接触件和能够具有多个电阻状态的纳米管织物元件; 以及导电端子，其以导电接触件的间隔设置，其中所述纳米管织物元件置于所述导电接触件之间并与所述导电接触件电连通，并且所述导电接触件与所述阴极电连通，并且其中响应于施加到 阳极和导电端子，非易失性纳米管二极管能够在阳极和导电端子之间形成导电通路。

公开(公告)号：US07782650B2

公开(公告)日：2010-08-24

申请号：US11835845

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： G11C11/00

CPC分类号： H01L27/1021 ,  G11C2213/19 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  Y10S977/943

摘要： Under one aspect, a memory array includes word lines; bit lines; memory cells; and a memory operation circuit. Each memory cell responds to electrical stimulus on a word line and on a bit line and includes: a two-terminal non-volatile nanotube switching device having first and second terminals, a semiconductor diode element, and a nanotube fabric article capable of multiple resistance states. The semiconductor diode and nanotube article are between and in electrical communication with the first and second terminals, which are coupled to the word line bit line respectively. The operation circuit selects cells by activating bit and/or word lines, detects a resistance state of the nanotube fabric article of a selected memory cell, and adjusts electrical stimulus applied to the cell to controllably induce a selected resistance state in the nanotube fabric article. The selected resistance state corresponds to an informational state of the memory cell.

摘要翻译： 在一个方面，存储器阵列包括字线; 位线 记忆细胞; 和存储器操作电路。 每个存储器单元响应于字线和位线上的电刺激，并且包括：具有第一和第二端子的二端非易失性纳米管开关器件，半导体二极管元件和能够具有多个电阻状态的纳米管织物制品 。 半导体二极管和纳米管制品分别与第一和第二端子电连接，并且与第一和第二端子电连接，它们分别耦合到字线位线。 操作电路通过激活位和/或字线来选择单元，检测所选择的存储单元的纳米管织物的电阻状态，并调整施加到单元的电刺激以可控制地引起纳米管织物制品中选定的电阻状态。 选择的电阻状态对应于存储单元的信息状态。

公开(公告)号：US09911743B2

公开(公告)日：2018-03-06

申请号：US11835852

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： H01L27/102 ,  B82Y10/00 ,  G11C13/02 ,  H01L21/822 ,  H01L27/06 ,  H01L27/12

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  G11C2213/71 ,  G11C2213/72 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203

摘要： Under one aspect, a method of making a nanotube switch includes: providing a substrate having a first conductive terminal; depositing a multilayer nanotube fabric over the first conductive terminal; and depositing a second conductive terminal over the multilayer nanotube fabric, the nanotube fabric having a thickness, density, and composition selected to prevent direct physical and electrical contact between the first and second conductive terminals. In some embodiments, the first and second conductive terminals and the multilayer nanotube fabric are lithographically patterned so as to each have substantially the same lateral dimensions, e.g., to each have a substantially circular or rectangular lateral shape. In some embodiments, the multilayer nanotube fabric has a thickness from 10 nm to 200 nm, e.g., 10 nm to 50 nm. The structure may include an addressable diode provided under the first conductive terminal or deposited over the second terminal.

公开(公告)号：US08217490B2

公开(公告)日：2012-07-10

申请号：US11835856

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： G11C11/56 ,  G11C5/00 ,  H01L29/00

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  G11C2213/71 ,  G11C2213/72 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  Y10S977/943

摘要： Under one aspect, a non-volatile nanotube switch includes a first terminal; a nanotube block including a multilayer nanotube fabric, at least a portion of which is positioned over and in contact with at least a portion of the first terminal; a second terminal, at least a portion of which is positioned over and in contact with at least a portion of the nanotube block, wherein the nanotube block is constructed and arranged to prevent direct physical and electrical contact between the first and second terminals; and control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube block can switch between a plurality of electronic states in response to a plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube block provides an electrical pathway of different resistance between the first and second terminals.

摘要翻译： 在一个方面，非挥发性纳米管开关包括第一端子; 纳米管块，其包括多层纳米管织物，其至少一部分位于所述第一端子的至少一部分上方并与其接触; 第二端子，其至少一部分定位在所述纳米管块的至少一部分上方并与所述纳米管块的至少一部分接触，其中所述纳米管块被构造和布置成防止所述第一和第二端子之间的直接物理和电接触; 以及能够向第一和第二终端施加电刺激的控制电路。 响应于由控制电路施加到第一和第二端子的多个电刺激，纳米管块可以在多个电子状态之间切换。 对于每个不同的电子状态，纳米管块提供在第一和第二端子之间具有不同电阻的电路径。

公开(公告)号：US09601498B2

公开(公告)日：2017-03-21

申请号：US13113398

申请日：2011-05-23

申请人： Claude L. Bertin ,  Mitchell Meinhold ,  Steven L. Konsek ,  Thomas Rueckes ,  Max Strasburg ,  Frank Guo ,  X. M. Henry Huang ,  Ramesh Sivarajan

发明人： Claude L. Bertin ,  Mitchell Meinhold ,  Steven L. Konsek ,  Thomas Rueckes ,  Max Strasburg ,  Frank Guo ,  X. M. Henry Huang ,  Ramesh Sivarajan

IPC分类号： H01L23/52 ,  H01L27/112 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/02 ,  G11C17/16 ,  H01L27/105

CPC分类号： H01L27/112 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/025 ,  G11C17/16 ,  G11C17/165 ,  G11C2213/19 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/1052 ,  Y10S977/943

摘要： A two terminal memory device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes stimulus circuitry in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.

公开(公告)号：US07855403B2

公开(公告)日：2010-12-21

申请号：US12569460

申请日：2009-09-29

申请人： Claude L. Bertin ,  Mitchell Meinhold ,  Steven L. Konsek ,  Thomas Rueckes ,  Frank Guo

发明人： Claude L. Bertin ,  Mitchell Meinhold ,  Steven L. Konsek ,  Thomas Rueckes ,  Frank Guo

IPC分类号： H01L29/76

CPC分类号： G11C13/0033 ,  B82Y10/00 ,  G11C11/412 ,  G11C13/025 ,  G11C2213/17 ,  H01L27/0688 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/1108 ,  H01L27/283 ,  H01L51/0048 ,  H01L51/0516 ,  H01L51/0545 ,  Y10S257/903 ,  Y10S977/762 ,  Y10S977/938

摘要： Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.

摘要翻译： 混合碳纳米管FET（CNFET），静态RAM（SRAM）及其制造方法。 静态柱式存储单元具有两个交叉耦合半导体型场效应晶体管（FET）和两个纳米管FET（NTFET），每个具有由至少一个半导体纳米管制成的沟道区域，第一NTFET连接到漏极或源极 连接到第二半导体型FET的漏极或源极的第一半导体型FET和第二NTFET。

公开(公告)号：US07598544B2

公开(公告)日：2009-10-06

申请号：US11332080

申请日：2006-01-13

申请人： Claude L. Bertin ,  Mitchell Meinhold ,  Steven L. Konsek ,  Thomas Rueckes ,  Frank Guo

发明人： Claude L. Bertin ,  Mitchell Meinhold ,  Steven L. Konsek ,  Thomas Rueckes ,  Frank Guo

IPC分类号： H01L27/11 ,  H01L21/8244

CPC分类号： G11C13/0033 ,  B82Y10/00 ,  G11C11/412 ,  G11C13/025 ,  G11C2213/17 ,  H01L27/0688 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/1108 ,  H01L27/283 ,  H01L51/0048 ,  H01L51/0516 ,  H01L51/0545 ,  Y10S257/903 ,  Y10S977/762 ,  Y10S977/938

摘要： Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.

摘要翻译： 混合碳纳米管FET（CNFET），静态RAM（SRAM）及其制造方法。 静态柱式存储单元具有两个交叉耦合半导体型场效应晶体管（FET）和两个纳米管FET（NTFET），每个具有由至少一个半导体纳米管制成的沟道区域，第一NTFET连接到漏极或源极 连接到第二半导体型FET的漏极或源极的第一半导体型FET和第二NTFET。