Method and device for increasing fin device density for unaligned fins
    3.
    发明授权
    Method and device for increasing fin device density for unaligned fins 有权
    用于增加未对准翅片翅片装置密度的方法和装置

    公开(公告)号:US08769446B2

    公开(公告)日:2014-07-01

    申请号:US13227809

    申请日:2011-09-08

    IPC分类号: G06F17/50

    摘要: A method for generating a layout for a device having FinFETs from a first layout for a device having planar transistors is disclosed. A plurality of elongate mandrels is defined in a plurality of active regions. Where adjacent active regions are partially-parallel and within a specified minimum spacing, connective elements are added to a portion of the space between the adjacent active regions to connect the mandrel ends from one active region to another active region.

    摘要翻译: 公开了一种用于从具有平面晶体管的器件的第一布局生成具有FinFET的器件的布局的方法。 多个细长心轴被限定在多个有源区域中。 在相邻有源区域部分平行并且在规定的最小间隔内,连接元件被添加到相邻有源区域之间的空间的一部分,以将心轴端部从一个有源区域连接到另一个有源区域。

    Device and method for forming Fins in integrated circuitry
    6.
    发明授权
    Device and method for forming Fins in integrated circuitry 有权
    用于在集成电路中形成Fins的装置和方法

    公开(公告)号:US08525267B2

    公开(公告)日:2013-09-03

    申请号:US12953148

    申请日:2010-11-23

    IPC分类号: H01L29/66

    摘要: A semiconductor FinFET device includes a plurality of gate lines formed in a first direction, and two types of fin structures. A first type of fin structures is formed in a second direction, and a second type of fin structures formed perpendicular to the first type of fin structures. A contact hole couples to one or more of the second type of fin structures.

    摘要翻译: 半导体FinFET器件包括沿第一方向形成的多个栅极线和两种类型的鳍结构。 在第二方向上形成第一类型的翅片结构,以及垂直于第一类型翅片结构形成的第二类型的翅片结构。 接触孔耦合到第二类型的翅片结构中的一个或多个。

    MANDREL MODIFICATION FOR ACHIEVING SINGLE FIN FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE
    8.
    发明申请
    MANDREL MODIFICATION FOR ACHIEVING SINGLE FIN FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE 有权
    用于实现单FIN FIN效果场效应晶体管(FINFET)器件的MANDREL修改

    公开(公告)号:US20130174103A1

    公开(公告)日:2013-07-04

    申请号:US13339646

    申请日:2011-12-29

    IPC分类号: G06F17/50

    摘要: Methods for forming a single fin fin-like field effect transistor (FinFET) device are disclosed. An exemplary method includes providing a main mask layout and a trim mask layout to form fins of a fin-like field effect transistor (FinFET) device, wherein the main mask layout includes a first masking feature and the trim mask layout includes a second masking feature that defines at least two fins, the first masking feature and the second masking feature having a spatial relationship; and modifying the main mask layout based on the spatial relationship between the first masking feature and the second masking feature, wherein the modifying the main mask layout includes modifying the first masking feature such that a single fin FinFET device is formed using the modified main mask layout and the trim mask layout.

    摘要翻译: 公开了形成单个翅片状场效应晶体管(FinFET)器件的方法。 一种示例性方法包括提供主掩模布局和修剪掩模布局以形成鳍状场效应晶体管(FinFET)器件的鳍,其中主掩模布局包括第一掩蔽特征,并且修剪蒙版布局包括第二掩蔽特征 其限定至少两个鳍,所述第一掩蔽特征和所述第二掩蔽特征具有空间关系; 以及基于所述第一掩蔽特征和所述第二掩蔽特征之间的空间关系来修改所述主掩模布局,其中所述修改所述主掩模布局包括修改所述第一掩蔽特征,使得使用所述修改的主掩模布局形成单鳍FinFET器件 和修剪蒙版布局。

    Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) device
    9.
    发明授权
    Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) device 有权
    用于实现单鳍鳍状场效应晶体管(FinFET)器件的芯棒修改

    公开(公告)号:US08881066B2

    公开(公告)日:2014-11-04

    申请号:US13339646

    申请日:2011-12-29

    IPC分类号: G06F17/50

    摘要: Methods for forming a single fin fin-like field effect transistor (FinFET) device are disclosed. An exemplary method includes providing a main mask layout and a trim mask layout to form fins of a fin-like field effect transistor (FinFET) device, wherein the main mask layout includes a first masking feature and the trim mask layout includes a second masking feature that defines at least two fins, the first masking feature and the second masking feature having a spatial relationship; and modifying the main mask layout based on the spatial relationship between the first masking feature and the second masking feature, wherein the modifying the main mask layout includes modifying the first masking feature such that a single fin FinFET device is formed using the modified main mask layout and the trim mask layout.

    摘要翻译: 公开了形成单个翅片状场效应晶体管(FinFET)器件的方法。 一种示例性方法包括提供主掩模布局和修剪掩模布局以形成鳍状场效应晶体管(FinFET)器件的鳍,其中主掩模布局包括第一掩蔽特征,并且修剪蒙版布局包括第二掩蔽特征 其限定至少两个鳍,所述第一掩蔽特征和所述第二掩蔽特征具有空间关系; 以及基于所述第一掩蔽特征和所述第二掩蔽特征之间的空间关系来修改所述主掩模布局,其中所述修改所述主掩模布局包括修改所述第一掩蔽特征,使得使用所述修改的主掩模布局形成单鳍FinFET器件 和修剪蒙版布局。