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1.发明授权Quantum-well radiation-interactive device, and methods of radiation detection and modulation 失效量子阱辐射交互装置，以及辐射检测和调制方法
公开(公告)号：US5023685A
公开(公告)日：1991-06-11
申请号：US361879
申请日：1989-06-06
IPC分类号： H01L25/04 , H01L27/148
CPC分类号： B82Y20/00 , H01L25/043 , H01L27/14812 , H01L27/14868 , H01L27/14875 , H01L2924/0002
摘要： Electromagnetic radiation such as, in particular, infrared radiation is detected opto-electronically by means of a superlattice structure forming quantum wells having a single bound state; in the interest of minimizing dark-current, relatively wide barriers are used between quantum wells. Resulting highly sensitive, high-speed detectors can be used in optical communications, for terrain mapping, and for infrared viewing. Furthermore, upon application of a variable electrical potential across the superlattice structure, radiation traversing such structure can be modulated.
摘要翻译： 通过形成具有单一结合状态的量子阱的超晶格结构以光电子方式检测电磁辐射，特别是红外辐射; 为了最小化暗电流，在量子阱之间使用相对较宽的屏障。 因此，高灵敏度的高速探测器可用于光通信，地形测绘和红外观测。 此外，当在超晶格结构上施加可变电位时，可以调制穿过这种结构的辐射。
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公开(公告)号：US4894526A
公开(公告)日：1990-01-16
申请号：US97567
申请日：1987-09-15
IPC分类号： G01J1/02 , H01L31/0264 , H01L31/0352 , H01L31/09 , H01L31/10 , H01L31/101
CPC分类号： B82Y20/00 , H01L31/035236 , H01L31/101
摘要： A narrow-bandwidth, high-speed infrared radiation detector is based on tunneling of photo-excited electrons out of quantum wells. Infrared radiation incident on a superlattice of doped quantum wells gives rise to intersubband resonance radiation which excites electrons from the ground state into an excited state. A photocurrent results from excited electrons tunneling out of quantum wells. Conveniently, Group III-V materials can be used in device manufacture. Preferably, quantum well potential barriers are shaped so as to facilitate resonant tunneling of photocurrents as compared with dark current. Preferred device operation is at elevated bias voltage, giving rise to enhancement of photocurrent by a quantum-well-avalanche effect.
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公开(公告)号：US4199698A
公开(公告)日：1980-04-22
申请号：US967688
申请日：1978-12-08
CPC分类号： G02F1/3611
摘要： Nonlinear devices using 2-methyl-4-nitroaniline are described. Devices using 2-methyl-4-nitroaniline as the active element include second harmonic generators, optical mixers and parametric oscillators which can be operated under phasematched conditions.
摘要翻译： 描述了使用2-甲基-4-硝基苯胺的非线性装置。 使用2-甲基-4-硝基苯胺作为有源元件的器件包括二次谐波发生器，光学混合器和可在相位条件下操作的参数振荡器。
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4.发明授权Devices using avalanche photodiode and capable of detecting a small number of photons 失效使用雪崩光电二极管并能够检测少量光子的器件
公开(公告)号：US4754131A
公开(公告)日：1988-06-28
申请号：US814962
申请日：1985-12-31
申请人： Clyde G. Bethea , Barry F. Levine
发明人： Clyde G. Bethea , Barry F. Levine
CPC分类号： H01L31/02027
摘要： An avalanche photodetector having separate absorption and multiplication regions comprising Group III-V compound semiconductors is useful as a detector of small numbers of photons when it is operated with an above threshold bias voltage at ambient temperature.
摘要翻译： 具有包含III-V族化合物半导体的分离的吸收和倍增区的雪崩光电探测器在环境温度下以上述阈值偏置电压操作时可用作少量光子的检测器。
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公开(公告)号：US4942442A
公开(公告)日：1990-07-17
申请号：US346384
申请日：1989-04-27
IPC分类号： G01T1/24 , G01T1/29 , H01L31/02 , H01L31/101 , H01L31/115
CPC分类号： H01L31/101 , G01T1/24 , G01T1/2928 , H01L31/02024 , H01L31/115
摘要： Radiation-induced effects discovered in layered structures of conductor and semiconductor materials are utilized in radiation-sensitive devices such as, e.g., highly linear as well as highly nonlinear position sensors. Such devices includes a structure of alternating layers of conductor and semiconductor materials, and electrical contacts are provided between which a radiation-induced voltage appears. Among suitable layer materials are silicon and titanium, and resulting devices are sensitive to electromagnetic as well as to particle radiation.
摘要翻译： 导体和半导体材料的分层结构中发现的辐射诱发效应被用于辐射敏感的装置，例如高度线性的以及高度非线性的位置传感器。 这样的器件包括交替的导体和半导体材料层的结构，并且在其之间提供电触点，其中出现辐射感应电压。 在合适的层材料中有硅和钛，所得到的器件对电磁和粒子辐射敏感。
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公开(公告)号：US4599632A
公开(公告)日：1986-07-08
申请号：US412786
申请日：1982-08-30
IPC分类号： H01L31/04 , H01L31/065 , H01L31/10 , H01L31/109 , H01L27/14
CPC分类号： H01L31/065 , H01L31/109 , Y02E10/50
摘要： A photodetector having a graded bandgap region is an ultrahigh speed photodetector when operated at zero bias.
摘要翻译： 具有渐变带隙区域的光电检测器是以零偏压运行时的超高速光电检测器。
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公开(公告)号：US5589704A
公开(公告)日：1996-12-31
申请号：US379422
申请日：1995-01-27
申请人： Barry F. Levine
发明人： Barry F. Levine
IPC分类号： H01L31/10 , H01L31/0236 , H01L31/0232
CPC分类号： H01L31/0236 , Y02E10/50
摘要： Si-based photodetectors according to the invention can have high speed (e.g.,.gtoreq.1 Gb/s) and high efficiency (e.g.,>20%). The detectors include a relatively thin (e.g.,
摘要翻译： 根据本发明的基于Si的光电检测器可以具有高速度（例如，> / = 1Gb / s）和高效率（例如> 20％）。 检测器包括较薄的（例如，<0.5α-1，其中α-1是相关辐射的Si中的吸收长度）在电介质（通常为SiO 2）层上，在Si层上具有合适的接触。 显着地，Si层的表面被纹理化，使得入射到表面上并且传输到Si层中的辐射具有基本上随机的方向。 传播方向的随机化导致Si层中的辐射的实质捕获，伴随着Si中有效传播长度的增加。 根据本发明的检测器有利地与Si芯片上的相关电路集成，通常形成检测器阵列。
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公开(公告)号：US5506419A
公开(公告)日：1996-04-09
申请号：US336946
申请日：1994-11-10
申请人： Barry F. Levine , Gabby Sarusi
发明人： Barry F. Levine , Gabby Sarusi
IPC分类号： H01L31/0232 , H01L31/0236 , H01L31/0352 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： H01L31/0236 , H01L31/0232 , H01L31/0352 , Y02E10/50
摘要： Quantum well infrared photodetectors (QWIPs) according to the invention have a surface that provides pseudo-random reflection of the radiation that is incident thereon, resulting in an increase in the effective number of passes of the radiation through the quantum well region, and hence in increased responsivity of the QWIPs, as compared to corresponding prior art grating QWIPs. A convenient approach to forming the pseudo-random reflecting surface is disclosed.
摘要翻译： 根据本发明的量子阱红外光电检测器（QWIP）具有提供入射到其上的辐射的伪随机反射的表面，导致辐射通过量子阱区域的有效通过次数增加，因此在 与相应的现有技术的光栅QWIP相比，QWIP的响应度提高。 公开了形成伪随机反射表面的方便方法。
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