公开(公告)号：US06284650B1

公开(公告)日：2001-09-04

申请号：US08969627

申请日：1997-11-13

申请人： Cory M. Czarnik ,  Vedapuram S. Achutharaman ,  Mahalingam Venkatesan ,  Klaus-Dieter Rinnen

发明人： Cory M. Czarnik ,  Vedapuram S. Achutharaman ,  Mahalingam Venkatesan ,  Klaus-Dieter Rinnen

IPC分类号： H01L214763

CPC分类号： H01L21/76889 ,  H01L21/28061

摘要： A method of forming a silicide on a silicon layer. First, a monosilane based tungsten-silicide layer is formed on the silicon layer. Next, a dichlorosilane based tungsten-silicide layer is formed on the monosilane based tungsten-silicide layer.

摘要翻译： 一种在硅层上形成硅化物的方法。 首先，在硅层上形成硅烷硅化钨层。 接着，在硅烷硅化钨层上形成二氯硅烷系硅化钨层。

公开(公告)号：US5863598A

公开(公告)日：1999-01-26

申请号：US631922

申请日：1996-04-12

申请人： Mahalingam Venkatesan ,  Shulin Wang ,  Vedapuram S. Achutharaman

发明人： Mahalingam Venkatesan ,  Shulin Wang ,  Vedapuram S. Achutharaman

IPC分类号： C30B25/10 ,  C23C16/04 ,  C23C16/24 ,  C30B25/14 ,  H01L21/205 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76877 ,  C23C16/045 ,  C23C16/24 ,  Y10S148/122

摘要： A method of forming a doped silicon film on a substrate. According to the present invention, a substrate is placed in a reaction chamber and heated. Next, a silicon containing gas is fed into the reaction chamber to produce a silicon containing gas partial pressure of between 4 and 20 torr.

摘要翻译： 在衬底上形成掺杂硅膜的方法。 根据本发明，将基板放置在反应室中并加热。 接下来，将含硅气体进料到反应室中以产生4至20托的含硅气体分压。

公开(公告)号：US6019839A

公开(公告)日：2000-02-01

申请号：US62292

申请日：1998-04-17

申请人： Vedapuram S. Achutharaman ,  Johanes Swenberg

发明人： Vedapuram S. Achutharaman ,  Johanes Swenberg

IPC分类号： C30B25/02 ,  H01L21/285 ,  C03B23/00

CPC分类号： H01L21/28518 ,  C30B25/02 ,  C30B29/10

摘要： A method and apparatus for forming an epitaxial titanium silicide film is described. According to the present invention, a monocrystalline silicon substrate is placed in a deposition chamber and heated to a temperature between 710-770.degree. C. A silicon source gas and titanium tetrachloride are then provided into the deposition chamber. The deposition pressure is maintained between 5-10 torr. An epitaxial titanium silicide film is then formed on the substrate from the silicon source gas and the titanium tetrachloride.

摘要翻译： 描述了用于形成外延硅化钛膜的方法和装置。 根据本发明，将单晶硅衬底放置在沉积室中并加热至710-770℃之间的温度。然后将硅源气体和四氯化钛提供到沉积室中。 沉积压力保持在5-10托之间。 然后从硅源气体和四氯化钛在衬底上形成外延硅化钛膜。

公开(公告)号：US07964418B2

公开(公告)日：2011-06-21

申请号：US11893416

申请日：2007-08-16

申请人： Vedapuram S. Achutharaman ,  Wen Chang ,  Tarpan Dixit ,  Philip Kraus

发明人： Vedapuram S. Achutharaman ,  Wen Chang ,  Tarpan Dixit ,  Philip Kraus

IPC分类号： H01L21/66

CPC分类号： H01L31/0322 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/048 ,  H01L31/055 ,  H01L31/0749 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

摘要： A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB2VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.

摘要翻译： 提供一种制造半导体层的方法。 在第一时间段内的第一沉积中，至少一个IIIA族元素和至少一个第VIA族元素沉积在衬底上或可选择地设置在诸如背面电极的衬底上的层上。 在第二时间段期间的第二沉积期间，至少一个IB族元件和至少一个VIA元件沉积在基底或可选层上。 一组IB元素与VIA元素组合形成IB2VIA组合物。 通过进行第一沉积状态的第一多个测量，在第二沉积期间监测第一沉积状态。 基于第一沉积状态的标记的第一多个测量的函数，第二沉积被终止或衰减。

公开(公告)号：US20090152247A1

公开(公告)日：2009-06-18

申请号：US12291002

申请日：2008-11-04

申请人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P.S. Thakur

发明人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P.S. Thakur

IPC分类号： B23K26/00

CPC分类号： B23K26/0738 ,  B23K26/0613 ,  B23K26/0676 ,  H01L21/268 ,  H01L29/7833 ,  Y10T117/1016

摘要： A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

摘要翻译： 用于退火半导体工件的动态表面退火装置具有用于支撑工件的工件支撑件，用于沿着快轴相对于彼此扫描光源和工件支撑件的光源和扫描装置。 光源包括大致以发射器的连续行布置的激光发射器的阵列，该列横向于快轴。 多个准直的小透镜叠加在发射器排中的相应行上，并沿着快轴提供准直。 所选择的小透镜具有对应于沿着快轴的光束偏转的相应行发射器的一个或一系列光学偏转角。 将来自激光发射器阵列的光聚焦到工件的表面上，以根据偏转角的顺序形成一系列沿着快轴间隔开的快轴的线束。

公开(公告)号：US20080210671A1

公开(公告)日：2008-09-04

申请号：US11508781

申请日：2006-08-23

申请人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

发明人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

IPC分类号： B23K26/00

CPC分类号： B23K26/0738 ,  B23K26/0613 ,  B23K26/0676 ,  H01L21/268 ,  H01L29/7833 ,  Y10T117/1016

摘要： A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

摘要翻译： 用于退火半导体工件的动态表面退火装置具有用于支撑工件的工件支撑件，用于沿着快轴相对于彼此扫描光源和工件支撑件的光源和扫描装置。 光源包括大致以发射器的连续行布置的激光发射器的阵列，这些行横向于快轴。 多个准直的小透镜叠加在发射器排中的相应行上，并沿着快轴提供准直。 所选择的小透镜具有对应于沿着快轴的光束偏转的相应行发射器的一个或一系列光学偏转角。 将来自激光发射器阵列的光聚焦到工件的表面上，以根据偏转角的顺序形成一系列沿着快轴间隔开的快轴的线束。

公开(公告)号：US6022587A

公开(公告)日：2000-02-08

申请号：US855247

申请日：1997-05-13

申请人： H. Peter W. Hey ,  Vedapuram S. Achutharaman ,  Johanes F. N. Swenberg

发明人： H. Peter W. Hey ,  Vedapuram S. Achutharaman ,  Johanes F. N. Swenberg

IPC分类号： C23C16/44 ,  H01L21/205 ,  H01L21/285 ,  C23C16/42

CPC分类号： C23C16/44 ,  C23C16/4404

摘要： A method and apparatus for depositing a film on a substrate. According to the present invention a prewafer reaction layer is deposited onto a susceptor placed in the reaction chamber to form a prewafer reaction layer coated susceptor prior to film deposition. A deposition gas is then fed into the reaction chamber so that it flows over the prewafer reaction layer coated susceptor and the substrate to form a film on the prewafer reaction layer coated susceptor and the substrate.

摘要翻译： 一种用于在基板上沉积膜的方法和装置。 根据本发明，预沉积反应层沉积在放置在反应室中的基座上，以便在膜沉积之前形成预先覆盖的反应层涂覆的基座。 然后将沉积气体进料到反应室中，使其流过预先预处理的反应层涂覆的基座和基底，以在预先涂覆的反应层涂覆的基座和基底上形成膜。

公开(公告)号：US08110828B2

公开(公告)日：2012-02-07

申请号：US13157058

申请日：2011-06-09

申请人： Vedapuram S. Achutharaman ,  Wen Chang ,  Tarpan Dixit ,  Philip Kraus

发明人： Vedapuram S. Achutharaman ,  Wen Chang ,  Tarpan Dixit ,  Philip Kraus

IPC分类号： H01L29/08

CPC分类号： H01L31/0322 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/048 ,  H01L31/055 ,  H01L31/0749 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

摘要： A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on a substrate or on a layer optional disposed on the substrate such as a back-electrode. During a second deposition during a second period of time, at least one Group IB element and the at least one group VIA element are deposited on the substrate or the optional layer. The one Group IB element combines with the Group VIA element to form a IB2VIA composition. A first deposition state is monitored, during the second deposition by making a first plurality of measurements of a first deposition state. The second deposition is terminated or attenuated based on a function of the first plurality of measurements of the indicia of the first deposition state.

摘要翻译： 提供一种制造半导体层的方法。 在第一时间段内的第一沉积中，至少一个IIIA族元素和至少一个第VIA族元素沉积在衬底上或可选择地设置在诸如背面电极的衬底上的层上。 在第二时间段期间的第二沉积期间，至少一个IB族元件和至少一个VIA元件沉积在基底或可选层上。 一组IB元素与VIA元素组合形成IB2VIA组合物。 通过进行第一沉积状态的第一多个测量，在第二沉积期间监测第一沉积状态。 基于第一沉积状态的标记的第一多个测量的函数，第二沉积被终止或衰减。

公开(公告)号：US07674999B2

公开(公告)日：2010-03-09

申请号：US11508781

申请日：2006-08-23

申请人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

发明人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

IPC分类号： H01L21/324 ,  H01L21/477

CPC分类号： B23K26/0738 ,  B23K26/0613 ,  B23K26/0676 ,  H01L21/268 ,  H01L29/7833 ,  Y10T117/1016

摘要： A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

摘要翻译： 用于退火半导体工件的动态表面退火装置具有用于支撑工件的工件支撑件，用于沿着快轴相对于彼此扫描光源和工件支撑件的光源和扫描装置。 光源包括大致以发射器的连续行布置的激光发射器的阵列，该列横向于快轴。 多个准直的小透镜叠加在发射器排中的相应行上，并沿着快轴提供准直。 所选择的小透镜具有对应于沿着快轴的光束偏转的相应行发射器的一个或一系列光学偏转角。 将来自激光发射器阵列的光聚焦到工件的表面上，以根据偏转角的顺序形成一系列沿着快轴间隔开的快轴的线束。

公开(公告)号：US06888104B1

公开(公告)日：2005-05-03

申请号：US10773650

申请日：2004-02-05

申请人： Joseph M. Ranish ,  Aaron Muir Hunter ,  Balasubramanian Ramachandran ,  Jallepally Ravi ,  Sundar Ramamurthy ,  Vedapuram S. Achutharaman ,  Khurshed Sorabji

发明人： Joseph M. Ranish ,  Aaron Muir Hunter ,  Balasubramanian Ramachandran ,  Jallepally Ravi ,  Sundar Ramamurthy ,  Vedapuram S. Achutharaman ,  Khurshed Sorabji

IPC分类号： F27B5/14 ,  F27B17/00 ,  F27D5/00 ,  F27D19/00 ,  F27D21/00 ,  H01L21/687

CPC分类号： H01L21/68735 ,  F27B17/0025 ,  F27D5/0037 ,  F27D19/00 ,  F27D21/00 ,  H01L21/68757

摘要： A substrate support ring has a band having an inner perimeter that at least partially surrounds a periphery of the substrate. The band has a radiation absorption surface. A lip extends radially inwardly from the inner perimeter of the band to support the substrate. The band and lip can be formed from silicon carbide, and the radiation absorption surface can be an oxidized layer of silicon carbide. In one version, the band and lip have a combined thermal mass Tm, and the radiation absorption surface has an absorptivity A and a surface area Sa, such that the ratio (A×Sa)/Tm is from about 4×10−5 m2K/J to about 9×10−4 m2K/J.

摘要翻译： 衬底支撑环具有带子，该带具有至少部分地围绕衬底周边的内周边。 带具有辐射吸收表面。 唇缘从带的内周向径向向内延伸以支撑基底。 带和唇缘可以由碳化硅形成，并且辐射吸收表面可以是碳化硅的氧化层。 在一个版本中，带和唇具有组合的热质量T m，并且辐射吸收表面具有吸收率A和表面积S SUB，使得比率 （AxS a）/ T m是约4×10 -5 / 2K / J至约9×10 9 / SUP> -4 / 2K / J。