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公开(公告)号：US5863598A
公开(公告)日：1999-01-26
申请号：US631922
申请日：1996-04-12
IPC分类号： C30B25/10 , C23C16/04 , C23C16/24 , C30B25/14 , H01L21/205 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76877 , C23C16/045 , C23C16/24 , Y10S148/122
摘要： A method of forming a doped silicon film on a substrate. According to the present invention, a substrate is placed in a reaction chamber and heated. Next, a silicon containing gas is fed into the reaction chamber to produce a silicon containing gas partial pressure of between 4 and 20 torr.
摘要翻译： 在衬底上形成掺杂硅膜的方法。 根据本发明，将基板放置在反应室中并加热。 接下来，将含硅气体进料到反应室中以产生4至20托的含硅气体分压。
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公开(公告)号：US06284650B1
公开(公告)日：2001-09-04
申请号：US08969627
申请日：1997-11-13
IPC分类号： H01L214763
CPC分类号： H01L21/76889 , H01L21/28061
摘要： A method of forming a silicide on a silicon layer. First, a monosilane based tungsten-silicide layer is formed on the silicon layer. Next, a dichlorosilane based tungsten-silicide layer is formed on the monosilane based tungsten-silicide layer.
摘要翻译： 一种在硅层上形成硅化物的方法。 首先，在硅层上形成硅烷硅化钨层。 接着，在硅烷硅化钨层上形成二氯硅烷系硅化钨层。
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公开(公告)号：US06500734B2
公开(公告)日：2002-12-31
申请号：US09325597
申请日：1999-06-02
IPC分类号： H01L2120
CPC分类号： C23C16/45574 , C23C16/45504 , C23C16/45512 , H01L21/67017 , H01L21/67023
摘要： A system for supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.
摘要翻译： 一种用于向具有壁的基板处理装置提供处理流体的系统，其内表面限定了处理室，其中基板支撑基座位于该处理室中。 该系统由许多流体储存器组成，每个流体存储器存储单独的处理流体，至少两个流体管道，处理流体从该流体流体流过流体储存器至处理装置;以及流体入口，其将流体导管连接到处理室。 入口具有与沿其形成的每个流体管道相对应的单独的流体通道。 每个流体通道在壁的内表面处或附近打开以限定流体混合区，从而防止沿着一个流体通道移动的流体与沿着任何其它通道移动的流体混合直至到达混合区。
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公开(公告)号：US5576059A
公开(公告)日：1996-11-19
申请号：US501343
申请日：1995-06-07
IPC分类号： C01B33/02 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/14 , C30B29/06 , H01L21/205
CPC分类号： C23C16/4585 , C23C16/45591 , C30B25/14
摘要： A barrier to prevent reactant gases from reaching the surfaces of a susceptor support for a substrate upon which polysilicon films are to be deposited provides improved uniformity of the depositing film across the substrate, and prevents substrate-to-substrate variations during sequential depositions. A suitable barrier includes a preheat ring extension that mates with an extension of the susceptor support.
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5.发明申请公开(公告)号：US20100096256A1
公开(公告)日：2010-04-22
申请号：US12255865
申请日：2008-10-22
IPC分类号： C23F1/02
摘要： A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
摘要翻译： 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 磁性薄膜的一部分经受热激发。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。
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公开(公告)号：US5932286A
公开(公告)日：1999-08-03
申请号：US33656
申请日：1993-03-16
IPC分类号： C23C16/34 , C23C16/50 , H01L21/205 , H01L21/31 , H01L21/318
CPC分类号： C23C16/345
摘要： Thin, uniform films of silicon nitride can be deposited onto a single substrate in a low pressure chemical vapor deposition process at a practicable rate from a gas mixture including a silane precursor gas and ammonia by maintaining the pressure at between about 5 and about 100 Torr. Deposition rates of up to about 185 angstroms per minute are readily achieved.
摘要翻译： 通过将压力保持在约5至约100托之间，可以以低压化学气相沉积工艺将薄均匀的氮化硅膜从包括硅烷前体气体和氨的气体混合物以可行的速率沉积到单个衬底上。 沉积速率高达约185埃每分钟容易实现。
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公开(公告)号：US5916369A
公开(公告)日：1999-06-29
申请号：US485058
申请日：1995-06-07
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , C30B25/14 , C23C16/00
CPC分类号： C23C16/45504 , C23C16/455 , C23C16/45514 , C23C16/45561 , C23C16/481 , C30B25/14
摘要： A system of supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to together define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.
摘要翻译： 向具有壁的基板处理装置供给处理流体的系统，其内表面限定了处理室，基板支撑基座位于该处理室中。 该系统由许多流体储存器组成，每个流体存储器存储单独的处理流体，至少两个流体管道，处理流体从该流体流体流过流体储存器至处理装置;以及流体入口，其将流体导管连接到处理室。 入口具有与沿其形成的每个流体管道相对应的单独的流体通道。 每个流体通道在壁的内表面处或附近开口以一起限定流体混合区域，从而防止沿着一个流体通道移动的流体与沿着任何其它通道移动的流体混合直到到达混合区域。
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8.发明授权Process of depositing a layer of material on a wafer with susceptor back coating 失效在具有基座背涂层的晶片上沉积材料层的工艺
公开(公告)号：US5834059A
公开(公告)日：1998-11-10
申请号：US624878
申请日：1996-03-27
IPC分类号： C30B25/08 , C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/4581 , C30B25/105 , C30B25/14
摘要： The present disclosure is directed to a process of depositing a layer of a material on a wafer, which comprises depositing a layer of the same material to be deposited on the wafer on the back surface of a susceptor.
摘要翻译： 本公开涉及在晶片上沉积材料层的方法，其包括在基座的背面上沉积待沉积在晶片上的相同材料的层。
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公开(公告)号：US20090199768A1
公开(公告)日：2009-08-13
申请号：US12029601
申请日：2008-02-12
摘要： A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides.
摘要翻译： 一种用于在基板上的磁性薄膜中定义磁畴的方法，包括：用抗蚀剂涂覆磁性薄膜; 图案化抗蚀剂，其中磁性薄膜的面积基本上未被覆盖; 并将该磁性薄膜暴露于等离子体，其中等离子体离子穿透该磁性薄膜的基本未覆盖的区域，使得基本上未覆盖的区域成为非磁性的。 用于该方法的工具包括：保持在地电位的真空室; 配置为将受控量的气体泄漏到所述室中的气体入口阀; 一种盘安装装置，其被配置为（1）装配在所述室内，（2）保持多个盘，将多个盘间隔开，其中，多个盘中的每一个的两侧暴露，以及（3） 的磁盘; 以及电耦合到盘安装装置和室的射频信号发生器，由此等离子体可以在腔室中点燃，并且盘在两侧均匀地暴露于等离子体离子。
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10.发明授权
公开(公告)号：US6113703A
公开(公告)日：2000-09-05
申请号：US200176
申请日：1998-11-25
IPC分类号： C23C16/455 , C23C16/46 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67115 , C23C16/455 , C23C16/46
摘要： A method and apparatus for processing opposing surfaces of a wafer. In one embodiment a semiconductor processing chamber is provided having an opening which allows for insertion of a wafer. A wafer holder is located within the semiconductor processing chamber for receiving the wafer. An inlet port allows flow of gas into the semiconductor processing chamber. An outlet port allows flow of gas from the semiconductor processing chamber. A first heat plate is mounted within the semiconductor processing chamber so that a first face of a wafer, when held by the wafer holder, faces towards the first heat plate. A first heat source is located to heat the first heat plate. A second heat plate is mounted in position within the semiconductor processing chamber so that a second face of the wafer, opposing the first face, faces towards the second heat plate. A second heat source is located to heat the second heat plate.
摘要翻译： 一种用于处理晶片相对表面的方法和装置。 在一个实施例中，提供了具有允许插入晶片的开口的半导体处理室。 晶片保持器位于半导体处理室内，用于接收晶片。 入口端口允许气体流入半导体处理室。 出口端口允许来自半导体处理室的气体流动。 第一加热板安装在半导体处理室内，使得当由晶片保持器保持时晶片的第一面朝向第一加热板。 位于第一热源以加热第一加热板。 第二加热板安装在半导体处理室内的适当位置，使得与第一面相对的晶片的第二面朝向第二加热板。 位于第二热源以加热第二加热板。
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