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    Method for lowering the phase transformation temperature of a metal silicide
    1.
    发明授权
    Method for lowering the phase transformation temperature of a metal silicide 失效
    降低金属硅化物的相变温度的方法

    公开(公告)号：US5510295A

    公开(公告)日：1996-04-23

    申请号：US145921

    申请日：1993-10-29

    申请人： Cyril Cabral, Jr. ,  Lawrence A. Clevenger ,  Francois M. d'Heurle ,  James M. E. Harper ,  Randy W. Mann ,  Glen L. Miles ,  Donald W. D. Rakowski

    发明人： Cyril Cabral, Jr. ,  Lawrence A. Clevenger ,  Francois M. d'Heurle ,  James M. E. Harper ,  Randy W. Mann ,  Glen L. Miles ,  Donald W. D. Rakowski

    IPC分类号： C23C20/02 ,  C30B1/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/44

    CPC分类号： C30B1/02 ,  C30B29/10 ,  H01L21/28518 ,  H01L29/665 ,  Y10S148/04 ,  Y10S148/147

    摘要： The phase transformation temperature of a metal silicide layer formed overlying a silicon layer on a semiconductor wafer is lowered. First, a refractory metal is disposed proximate to the surface of the silicon layer, a precursory metal is deposited in a layer overlying the refractory metal, and the wafer is heated to a temperature sufficient to form the metal silicide from the precursory metal. The precursory metal may be a refractory metal, and is preferably titanium, tungsten, or cobalt. The concentration of the refractory metal at the surface of the silicon layer is preferably less than about 10.sup.17 atoms/cm.sup.3. The refractory metal may be Mo, Co, W, Ta, Nb, Ru, or Cr, and more preferably is Mo or Co. The heating step used to form the silicide is performed at a temperature less than about 700.degree. C., and more preferably between about 600.degree.-700.degree. C. Optionally, the wafer is annealed following the step of disposing the refractory metal and prior to the step of depositing the precursory metal layer. Preferably, this annealing step is performed at a wafer temperature of at least about 900.degree. C.

    摘要翻译： 形成在半导体晶片上的硅层上形成的金属硅化物层的相变温度降低。 首先，将难熔金属设置在硅层的表面附近，在覆盖难熔金属的层中沉积前体金属，并将晶片加热到足以从前体金属形成金属硅化物的温度。 前体金属可以是难熔金属，优选为钛，钨或钴。 硅层表面的难熔金属的浓度优选小于约1017原子/ cm3。 难熔金属可以是Mo，Co，W，Ta，Nb，Ru或Cr，更优选为Mo或Co。用于形成硅化物的加热步骤在低于约700℃的温度下进行， 更优选在约600℃至700℃之间。任选地，在沉积难熔金属的步骤之后，并且在沉积前体金属层的步骤之前，将晶片退火。 优选地，该退火步骤在至少约900℃的晶片温度下进行。

    Thin film for a multilayer semiconductor device for improving thermal stability and a method thereof
    2.
    发明授权
    Thin film for a multilayer semiconductor device for improving thermal stability and a method thereof 失效
    用于提高热稳定性的多层半导体器件的薄膜及其方法

    公开(公告)号：US5608266A

    公开(公告)日：1997-03-04

    申请号：US458977

    申请日：1995-06-02

    申请人： Paul D. Agnello ,  Cyril Cabral, Jr. ,  Lawrence A. Clevenger ,  Matthew W. Copel ,  Francois M. d'Heurle ,  Qi-Zong Hong

    发明人： Paul D. Agnello ,  Cyril Cabral, Jr. ,  Lawrence A. Clevenger ,  Matthew W. Copel ,  Francois M. d'Heurle ,  Qi-Zong Hong

    IPC分类号： H01L21/28 ,  H01L21/265 ,  H01L21/285 ,  H01L21/336 ,  H01L29/78 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/28518 ,  Y10S438/934

    摘要： A method and a device directed to the same, for stabilizing cobalt silicide/single crystal silicon, amorphous silicon, polycrystalline silicon, germanide/crystalline germanium, polycrystalline germanium structures or other semiconductor material structures so that high temperature processing steps (above 750.degree. C.) do not degrade the structural quality of the cobalt silicide/silicon structure. The steps of the method include forming a silicide or germanide by either reacting cobalt with the substrate material and/or the codeposition of the silicide or germanide on a substrate, adding a selective element, either platinum or nitrogen, into the cobalt and forming the silicide germanide by a standard annealing treatment. Alternatively, the cobalt silicide or cobalt germanide can be formed after the formation of the silicide or germanide respectively. As a result, the upper limit of the annealing temperature at which the silicide or germanide will structurally degrade is increased.

    摘要翻译： 涉及其的方法和装置，用于稳定硅化钴/单晶硅，非晶硅，多晶硅，锗化锗/结晶锗，多晶锗结构或其他半导体材料结构，使得高温处理步骤（高于750℃） ）不会降低硅化钴/硅结构的结构质量。 该方法的步骤包括通过使钴与衬底材料反应和/或在衬底上共沉积硅化物或锗化物形成硅化物或锗化物，向钴中加入选择性元素，铂或氮，并形成硅化物 通过标准退火处理的锗化物。 或者，可以在分别形成硅化物或锗化物之后形成硅化钴或锗锗。 结果，硅化物或锗化物在结构上降解的退火温度的上限增加。

    Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen
    3.
    发明授权
    Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen 失效
    用于提高使用铂或氮的硅化钴的热稳定性的多层半导体器件的膜的形成方法

    公开(公告)号：US5624869A

    公开(公告)日：1997-04-29

    申请号：US226923

    申请日：1994-04-13

    申请人： Paul D. Agnello ,  Cyril Cabral, Jr. ,  Lawrence A. Clevenger ,  Matthew W. Copel ,  Francois M. d'Heurle ,  Qi-Zhong Hong

    发明人： Paul D. Agnello ,  Cyril Cabral, Jr. ,  Lawrence A. Clevenger ,  Matthew W. Copel ,  Francois M. d'Heurle ,  Qi-Zhong Hong

    IPC分类号： H01L21/28 ,  H01L21/265 ,  H01L21/285 ,  H01L21/336 ,  H01L29/78

    CPC分类号： H01L21/28518 ,  Y10S438/934

    摘要： A method and a device directed to the same, for stabilizing cobalt di-silicide/single crystal silicon, amorphous silicon, polycrystalline silicon, germanide/crystalline germanium, polycrystalline germanium structures or other semiconductor material structures so that high temperature processing steps (above 750.degree. C.) do not degrade the structural quality of the cobalt di-silicide/silicon structure. The steps of the method include forming a di-silicide or germanide by either reacting cobalt with the substrate material and/or the codeposition of the di-silicide or germanide on a substrate, adding a selective element, either platinum or nitrogen, into the cobalt and forming the di-silicide or germanide by a standard annealing treatment. Alternatively, the cobalt di-silicide or cobalt germanide can be formed after the formation of the di-silicide or germanide respectively. As a result, the upper limit of the annealing temperature at which the di-silicide or germanide will structurally degrade is increased.

    摘要翻译： 涉及其的方法和装置，用于稳定二硅化硅/单晶硅，非晶硅，多晶硅，锗化锗/结晶锗，多晶锗结构或其他半导体材料结构，使得高温处理步骤（高于750° C.）不会降低二硅化钴/硅结构的结构质量。 该方法的步骤包括通过使钴与基底材料反应和/或二硅化物或锗化物在基底上共沉积形成二硅化物或锗化物，向铂中添加铂或氮的选择性元素 并通过标准退火处理形成二硅化物或锗化物。 另外也可以分别在二硅化物或锗化物形成之后形成二硅化钴或锗化钴。 结果，二硅化物或锗化锗在结构上降解的退火温度的上限增加。

    Retarding agglomeration of Ni monosilicide using Ni alloys
    4.
    发明授权
    Retarding agglomeration of Ni monosilicide using Ni alloys 有权
    使用Ni合金抑制Ni一硅化物的团聚

    公开(公告)号：US07271486B2

    公开(公告)日：2007-09-18

    申请号：US11075289

    申请日：2005-03-08

    申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  James M. E. Harper ,  Christian Lavoie

    发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  James M. E. Harper ,  Christian Lavoie

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： C04B35/58 ,  C04B35/58085 ,  C04B2235/40 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/408 ,  C23C26/00 ,  C23C30/00 ,  H01L21/28518 ,  H01L21/76889

    摘要： A method for providing a low resistance non-agglomerated Ni monosilicide contact that is useful in semiconductor devices. Where the inventive method of fabricating a substantially non-agglomerated Ni alloy monosilicide comprises the steps of: forming a metal alloy layer over a portion of a Si-containing substrate, wherein said metal alloy layer comprises of Ni and one or multiple alloying additive(s), where said alloying additive is Ti, V, Ge, Cr, Zr, Nb, Mo, Hf, Ta, W, Re, Rh, Pd or Pt or mixtures thereof; annealing the metal alloy layer at a temperature to convert a portion of said metal alloy layer into a Ni alloy monosilicide layer; and removing remaining metal alloy layer not converted into Ni alloy monosilicide. The alloying additives are selected for phase stability and to retard agglomeration. The alloying additives most efficient in retarding agglomeration are most efficient in producing silicides with low sheet resistance.

    摘要翻译： 一种用于提供半导体器件中有用的低电阻非聚集Ni单硅化物接触的方法。 在制造基本上非团聚的Ni合金一硅化硅的本发明方法中，包括以下步骤：在含Si衬底的一部分上形成金属合金层，其中所述金属合金层包括Ni和一种或多种合金添加剂 ），其中所述合金添加剂为Ti，V，Ge，Cr，Zr，Nb，Mo，Hf，Ta，W，Re，Rh，Pd或Pt或其混合物; 在将所述金属合金层的一部分转化为Ni合金一硅化物层的温度下退火金属合金层; 并且除去未转化为Ni合金一硅化物的剩余金属合金层。 选择合金添加剂用于相稳定性并阻止团聚。 延迟聚集中最有效的合金添加剂在生产低薄层电阻的硅化物中是最有效的。

    Method for low temperature selective growth of silicon or silicon alloys
    6.
    发明授权
    Method for low temperature selective growth of silicon or silicon alloys 失效
    硅或硅合金的低温选择性生长方法

    公开(公告)号：US5565031A

    公开(公告)日：1996-10-15

    申请号：US390132

    申请日：1995-02-17

    申请人： Cyril Cabral, Jr. ,  Kevin K. Chan ,  Jack O. Chu ,  James M. E. Harper

    发明人： Cyril Cabral, Jr. ,  Kevin K. Chan ,  Jack O. Chu ,  James M. E. Harper

    IPC分类号： C30B29/06 ,  C23C14/08 ,  C23C16/04 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205

    CPC分类号： H01L21/02642 ,  H01L21/02373 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02631 ,  Y10S148/106 ,  Y10S438/945

    摘要： Epitaxial and polycrystalline layers of silicon and silicon-germanium alloys are selectively grown on a semiconductor substrate or wafer by forming over the wafer a thin film masking layer of an oxide of an element selected from scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium; and then growing the epitaxial layer over the wafer at temperatures below 650.degree. C. The epitaxial and polycrystalline layers do not grow on the masking layer. The invention overcomes the problem of forming epitaxial layers at temperatures above 650.degree. C. by providing a lower temperature process.

    摘要翻译： 通过在晶片上形成选自钪，钇，镧，铈，镨，钕，钕，钕等的元素的氧化物的薄膜掩蔽层，选择性地在半导体衬底或晶片上生长硅和硅 - 锗合金的外延和多晶层， 钐，铕，钆，铽，镝，钬，铒，ium，镱和镥; 然后在低于650℃的温度下在晶片上生长外延层。外延层和多晶层不会在掩模层上生长。 本发明克服了通过提供较低温度的工艺在高于650℃的温度下形成外延层的问题。

    Low temperature selective growth of silicon or silicon alloys
    7.
    发明授权
    Low temperature selective growth of silicon or silicon alloys 失效
    硅或硅合金的低温选择性生长

    公开(公告)号：US5634973A

    公开(公告)日：1997-06-03

    申请号：US587029

    申请日：1996-01-16

    申请人： Cyril Cabral, Jr. ,  Kevin K. Chan ,  Jack O. Chu ,  James M. E. Harper

    发明人： Cyril Cabral, Jr. ,  Kevin K. Chan ,  Jack O. Chu ,  James M. E. Harper

    IPC分类号： C30B29/06 ,  C23C14/08 ,  C23C16/04 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  C30B33/06

    CPC分类号： H01L21/02642 ,  H01L21/02373 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02631 ,  Y10S148/106 ,  Y10S438/945

    摘要： Epitaxial and polycrystalline layers of silicon and silicon-germanium alloys are selectively grown on a semiconductor substrate or wafer by forming over the wafer a thin film masking layer of an oxide of an element selected from scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium; and then growing the epitaxial layer over the wafer at temperatures below 650.degree. C. The epitaxial and polycrystalline layers do not grow on the masking layer. The invention overcomes the problem of forming epitaxial layers at temperatures above 650.degree. C. by providing a lower temperature process.

    摘要翻译： 通过在晶片上形成选自钪，钇，镧，铈，镨，钕，钕，钕等的元素的氧化物的薄膜掩蔽层，选择性地在半导体衬底或晶片上生长硅和硅 - 锗合金的外延和多晶层， 钐，铕，钆，铽，镝，钬，铒，ium，镱和镥; 然后在低于650℃的温度下在晶片上生长外延层。外延层和多晶层不会在掩模层上生长。 本发明克服了通过提供较低温度的工艺在高于650℃的温度下形成外延层的问题。