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公开(公告)号：US08329500B2
公开(公告)日：2012-12-11
申请号：US12642527
申请日：2009-12-18
申请人： Byoung-Kyu Lee , Se-Jin Chung , Byoung-June Kim , Czang-Ho Lee , Myung-Hun Shin , Min-Seok Oh , Ku-Hyun Kang , Yuk-Hyun Nam , Seung-Jae Jung , Min Park , Mi-Hwa Lim , Joon-Young Seo
发明人： Byoung-Kyu Lee , Se-Jin Chung , Byoung-June Kim , Czang-Ho Lee , Myung-Hun Shin , Min-Seok Oh , Ku-Hyun Kang , Yuk-Hyun Nam , Seung-Jae Jung , Min Park , Mi-Hwa Lim , Joon-Young Seo
IPC分类号： H01L21/00
CPC分类号： H01L21/324 , H01L21/02667 , H01L31/03921 , H01L31/046 , H01L31/075 , H01L31/1872 , Y02E10/548 , Y02P70/521
摘要： Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.
摘要翻译： 提供了使用焦耳加热诱导结晶法制造光伏器件的方法。 该方法包括：在衬底上形成第一导电图案; 在具有第一导电图案的基板上形成光电转换层; 以及通过向所述光电转换层施加电场而使所述光电转换层的至少一部分结晶，其中所述光电转换层包括含有第一杂质的第一非晶半导体层，第二本征非晶半导体层和第三非晶半导体层 含有第二杂质。
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公开(公告)号：US08294021B2
公开(公告)日：2012-10-23
申请号：US12486654
申请日：2009-06-17
申请人： Min Park , Min-Seok Oh , Jung-Tae Kim , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Ku-Hyun Kang , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo
发明人： Min Park , Min-Seok Oh , Jung-Tae Kim , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Ku-Hyun Kang , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo
IPC分类号： H02N6/00 , H01L31/042 , H01L21/00
CPC分类号： H01L31/075 , H01L31/022441 , H01L31/046 , Y02E10/548
摘要： A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.
摘要翻译： 提供了一种光电器件及其制造方法。 光电器件包括：基板; 形成在所述基板上的第一导电层; 在第一导电层上沿着第一方向交替形成P层和N层; I层覆盖第一导电层上的P层和N层，其中P层和N层彼此分开第一间隔，I层形成在P层与N层之间 分离第一间隔，并且沿着第一方向形成的P层，I层和N层形成单位电池。
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公开(公告)号：US20100101633A1
公开(公告)日：2010-04-29
申请号：US12486654
申请日：2009-06-17
申请人： Min PARK , Min-Seok Oh , Jung-Tae Kim , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Ku-Hyun Kang , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo
发明人： Min PARK , Min-Seok Oh , Jung-Tae Kim , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Ku-Hyun Kang , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo
IPC分类号： H01L31/042 , H01L31/04 , H01L31/05 , H01L31/20 , H01L31/18 , H01L21/283
CPC分类号： H01L31/075 , H01L31/022441 , H01L31/046 , Y02E10/548
摘要： A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.
摘要翻译： 提供了一种光电器件及其制造方法。 光电器件包括：基板; 形成在所述基板上的第一导电层; 在第一导电层上沿着第一方向交替形成P层和N层; I层覆盖第一导电层上的P层和N层，其中P层和N层彼此分开第一间隔，I层形成在P层与N层之间 分离第一间隔，并且沿着第一方向形成的P层，I层和N层形成单位电池。
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公开(公告)号：US20100071745A1
公开(公告)日：2010-03-25
申请号：US12421548
申请日：2009-04-09
申请人： Czang-Ho LEE , Byoung-Kyu Lee , Mi-Hwa Lim , Joon-Young Seo , Myung-Hun Shin , Min-Seok Oh , Ku-Hyun Kang , Yuk-Hyun Nam , Seung-Jae Jung , Min Park
发明人： Czang-Ho LEE , Byoung-Kyu Lee , Mi-Hwa Lim , Joon-Young Seo , Myung-Hun Shin , Min-Seok Oh , Ku-Hyun Kang , Yuk-Hyun Nam , Seung-Jae Jung , Min Park
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/075 , H01L31/076 , Y02E10/542 , Y02E10/548
摘要： In one or more embodiments of a photovoltaic device and a method of manufacturing the photovoltaic device, a first conductive layer, a first light-absorbing layer and a second conductive layer may be formed on a substrate, in sequence. A temperature for forming the second conductive layer may be lower than a temperature for forming the first conductive layer and a temperature for forming the first light-absorbing layer.
摘要翻译： 在光伏器件的一个或多个实施例和制造光伏器件的方法中，可以依次在衬底上形成第一导电层，第一光吸收层和第二导电层。 用于形成第二导电层的温度可以低于用于形成第一导电层的温度和用于形成第一光吸收层的温度。
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公开(公告)号：US20090314337A1
公开(公告)日：2009-12-24
申请号：US12484916
申请日：2009-06-15
申请人： Czang-Ho Lee , Myung-Hun Shin , Seung-Jae Jung , Joon-Young Seo , Min-Seok Oh , Byoung-Kyu Lee , Ku-Hyun Kang , Mi-Hwa Lim
发明人： Czang-Ho Lee , Myung-Hun Shin , Seung-Jae Jung , Joon-Young Seo , Min-Seok Oh , Byoung-Kyu Lee , Ku-Hyun Kang , Mi-Hwa Lim
IPC分类号： H01L31/105 , H01L31/18
CPC分类号： H01L31/075 , Y02E10/548
摘要： Photovoltaic devices and methods of manufacturing the same are provided. In one example, a photovoltaic device includes: a substrate; a transparent conductive layer deposited on the substrate; a semiconductor layer provided with a P layer, an I layer, and a N layer sequentially deposited on the transparent conductive layer; and a rear electrode deposited on the N layer of the semiconductor layer, wherein the P layer is a P-type oxide semiconductor.
摘要翻译： 提供了光伏器件及其制造方法。 在一个示例中，光伏器件包括：衬底; 沉积在基底上的透明导电层; 设置有依次沉积在透明导电层上的P层，I层和N层的半导体层; 以及沉积在半导体层的N层上的后电极，其中P层是P型氧化物半导体。
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公开(公告)号：US07932576B2
公开(公告)日：2011-04-26
申请号：US12413979
申请日：2009-03-30
申请人： Seung-Jae Jung , Yuk-Hyun Nam , Czang-Ho Lee , Myung-Hun Shin , Min-Seok Oh , Byoung-Kyu Lee , Mi-Hwa Lim , Joon-Young Seo
发明人： Seung-Jae Jung , Yuk-Hyun Nam , Czang-Ho Lee , Myung-Hun Shin , Min-Seok Oh , Byoung-Kyu Lee , Mi-Hwa Lim , Joon-Young Seo
IPC分类号： H01L31/075
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/1884 , Y02E10/50
摘要： A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.
摘要翻译： 透明导电层包括衬底，设置在衬底上的第一导电层和设置在第一导电层上的第二导电层，其中第二导电层包括纹理表面和暴露第一导电层的开口，其中， 开口包括约1微米至约3微米的直径。 还公开了制造透明导电层和光电器件的方法。
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公开(公告)号：US08969713B2
公开(公告)日：2015-03-03
申请号：US13359606
申请日：2012-01-27
申请人： Min-Seok Oh , Jung-Tae Kim , Nam-Kyu Song , Min Park , Yun-Seok Lee , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo , Dong-Uk Choi , Dong-Seop Kim , Byoung-June Kim
发明人： Min-Seok Oh , Jung-Tae Kim , Nam-Kyu Song , Min Park , Yun-Seok Lee , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo , Dong-Uk Choi , Dong-Seop Kim , Byoung-June Kim
IPC分类号： H01L31/0224 , H01L31/0376 , H01L31/068 , H01L31/078 , H01L31/0236 , H01L31/18 , H01L31/072 , H01L31/0368
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/022466 , H01L31/02363 , H01L31/03682 , H01L31/03762 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/078 , H01L31/182 , Y02E10/52 , Y02E10/547 , Y02E10/548
摘要： Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.
摘要翻译： 这里公开了一种光电转换装置，其具有包括正面和背面的半导体衬底，形成在半导体衬底的正面上的保护层，形成在半导体衬底背面的第一非单晶半导体层， 第一导电层，包括形成在第一非单晶半导体层的背面的第一部分上的第一杂质，以及第二导电层，其包含第一杂质和第二杂质，所述第二杂质形成在第一非杂质半导体层的背面的第二部分上 第一非单晶半导体层。
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公开(公告)号：US20100154869A1
公开(公告)日：2010-06-24
申请号：US12476645
申请日：2009-06-02
申请人： Min-Seok Oh , Jung-Tae Kim , Nam-Kyu Song , Min Park , Yun-Seok Lee , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo , Dong-Uk Choi , Dong-Seop Kim , Byoung-June Kim
发明人： Min-Seok Oh , Jung-Tae Kim , Nam-Kyu Song , Min Park , Yun-Seok Lee , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo , Dong-Uk Choi , Dong-Seop Kim , Byoung-June Kim
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/00
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/022466 , H01L31/02363 , H01L31/03682 , H01L31/03762 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/078 , H01L31/182 , Y02E10/52 , Y02E10/547 , Y02E10/548
摘要： Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.
摘要翻译： 这里公开了一种光电转换装置，其具有包括正面和背面的半导体衬底，形成在半导体衬底的正面上的保护层，形成在半导体衬底背面的第一非单晶半导体层， 第一导电层，包括形成在第一非单晶半导体层的背面的第一部分上的第一杂质，以及第二导电层，其包含第一杂质和第二杂质，所述第二杂质形成在第一非杂质半导体层的背面的第二部分上 第一非单晶半导体层。
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公开(公告)号：US20100037940A1
公开(公告)日：2010-02-18
申请号：US12468444
申请日：2009-05-19
申请人： Mi-Hwa Lim , Czang-Ho Lee , Joon-Young Seo , Myung-Hun Shin , Min-Seok Oh , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung
发明人： Mi-Hwa Lim , Czang-Ho Lee , Joon-Young Seo , Myung-Hun Shin , Min-Seok Oh , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung
IPC分类号： H01L31/00
CPC分类号： H01L31/075 , H01L31/03685 , H01L31/03762 , H01L31/03765 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , H01L31/204 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A solar cell including a first semiconductor layer formed by sequentially stacking a positive (P) layer, an intrinsic (I) layer and a negative (N) layer, wherein the P layer comprises amorphous silicon carbide and at least one of the I and N layers comprises micro-crystalline silicon.
摘要翻译： 一种太阳能电池，其包括通过顺序堆叠正（P）层，本征（I）层和负（N）层而形成的第一半导体层，其中所述P层包括非晶碳化硅和所述I和N中的至少一个 层包括微晶硅。
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公开(公告)号：US20100013037A1
公开(公告)日：2010-01-21
申请号：US12397129
申请日：2009-03-03
申请人： Min Park , Min-Seok Oh , Myung-Hun Shin , Czang-Ho Lee , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo
发明人： Min Park , Min-Seok Oh , Myung-Hun Shin , Czang-Ho Lee , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/046 , H01L31/0465 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： A method for manufacturing a solar cell is provided. The manufacturing method includes: depositing a transparent conductive layer on a substrate; patterning the transparent conductive layer; forming a semiconductor layer including deposited on the patterned transparent conductive layer; patterning the semiconductor layer; coating a metal powder on the patterned semiconductor layer; forming a rear electrode layer on the semiconductor layer coated with the metal powder; and patterning the rear electrode layer and the semiconductor layer. This method is useful for producing a solar cell with improved light absorption efficiency.
摘要翻译： 提供一种太阳能电池的制造方法。 制造方法包括：在基板上沉积透明导电层; 图案化透明导电层; 形成包括沉积在图案化的透明导电层上的半导体层; 图案化半导体层; 在图案化的半导体层上涂覆金属粉末; 在涂有金属粉末的半导体层上形成后电极层; 以及对后电极层和半导体层进行构图。 该方法对于制造具有改善的光吸收效率的太阳能电池是有用的。
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