公开(公告)号：US20170062301A1

公开(公告)日：2017-03-02

申请号：US15347861

申请日：2016-11-10

申请人： ROHM CO., LTD.

发明人： Hiroshi OKUMURA

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L23/3128 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0346 ,  H01L2224/0384 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05541 ,  H01L2224/05555 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/11849 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/1411 ,  H01L2224/1412 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48866 ,  H01L2224/48884 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/384 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device suitable for preventing malfunction is provided.The semiconductor device includes a semiconductor chip 1, a first electrode pad 21 laminated on the semiconductor chip 1, an intermediate layer 4 having a rectangular shape defined by first edges 49a and second edges, and a plurality of bumps 5 arranged to sandwich the intermediate layer 4 by cooperating with the semiconductor chip 1. The first edges 49a extend in the direction x, whereas the second edges extend in the direction y. The plurality of bumps 5 include a first bump 51 electrically connected to the first electrode pad 21 and a second bump 52 electrically connected to the first electrode pad 21. The first bump 51 is arranged at one end in the direction x and one end in the direction y.

摘要翻译： 半导体器件包括半导体芯片1，层叠在半导体芯片1上的第一电极焊盘21，具有由第一边缘49a和第二边缘限定的矩形形状的中间层4，以及多个凸块5， 第一边缘49a沿着x方向延伸，而第二边缘沿y方向延伸。 多个凸块5包括电连接到第一电极焊盘21的第一凸块51和与第一电极焊盘21电连接的第二凸起52.第一凸块51沿x方向的一端和 方向y

公开(公告)号：US09368468B2

公开(公告)日：2016-06-14

申请号：US14586668

申请日：2014-12-30

申请人： QUALCOMM SWITCH CORP.

发明人： Michael A. Stuber ,  Stuart B. Molin ,  Mark Drucker ,  Peter Fowler

IPC分类号： H01L27/01 ,  H01L23/00

CPC分类号： H01L21/76251 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/76256 ,  H01L21/78 ,  H01L21/84 ,  H01L23/3677 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/78603 ,  H01L29/78606 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/11 ,  H01L2224/11003 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/131 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48666 ,  H01L2224/48684 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48766 ,  H01L2224/48784 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48866 ,  H01L2224/48884 ,  H01L2224/73257 ,  H01L2224/80006 ,  H01L2224/80048 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/831 ,  H01L2224/8382 ,  H01L2224/8385 ,  H01L2224/85205 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/9222 ,  H01L2224/92242 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/2064 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/80 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2224/1144 ,  H01L2924/00012 ,  H01L2224/83205 ,  H01L2224/45015 ,  H01L2924/207

摘要： An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface, where the first surface of the insulating layer is less than 10 microns below an upper plane of the integrated circuit assembly. An active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the active layer and formed on the second surface of the insulating layer, and is also electrically connected to a printed circuit board.

摘要翻译： 集成电路组件包括具有第一表面和第二表面的绝缘层，其中绝缘层的第一表面低于集成电路组件的上平面以下10微米。 有源层接触绝缘层的第一表面。 金属接合焊盘与有源层电连接并形成在绝缘层的第二表面上，并且还与印刷电路板电连接。

公开(公告)号：US20150279807A1

公开(公告)日：2015-10-01

申请号：US14722895

申请日：2015-05-27

申请人： ROHM CO., LTD.

发明人： Hiroshi OKUMURA

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L23/31

CPC分类号： H01L23/3128 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0346 ,  H01L2224/0384 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05541 ,  H01L2224/05555 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/11849 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/1411 ,  H01L2224/1412 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48866 ,  H01L2224/48884 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/384 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device suitable for preventing malfunction is provided.The semiconductor device includes a semiconductor chip 1, a first electrode pad 21 laminated on the semiconductor chip 1, an intermediate layer 4 having a rectangular shape defined by first edges 49a and second edges, and a plurality of bumps 5 arranged to sandwich the intermediate layer 4 by cooperating with the semiconductor chip 1. The first edges 49a extend in the direction x, whereas the second edges extend in the direction y. The plurality of bumps 5 include a first bump 51 electrically connected to the first electrode pad 21 and a second bump 52 electrically connected to the first electrode pad 21. The first bump 51 is arranged at one end in the direction x and one end in the direction y.

摘要翻译： 提供了适合于防止故障的半导体器件。 半导体器件包括：半导体芯片1，层叠在半导体芯片1上的第一电极焊盘21，具有由第一边缘49a和第二边缘限定的矩形形状的中间层4，以及多个凸块5， 第一边缘49a沿着x方向延伸，而第二边缘沿y方向延伸。 多个凸块5包括电连接到第一电极焊盘21的第一凸块51和与第一电极焊盘21电连接的第二凸起52.第一凸块51沿x方向的一端和 方向y

公开(公告)号：US08912646B2

公开(公告)日：2014-12-16

申请号：US13725306

申请日：2012-12-21

申请人： IO Semiconductor, Inc.

发明人： Michael A. Stuber ,  Stuart B. Molin ,  Mark Drucker ,  Peter Fowler

IPC分类号： H01L23/49 ,  H01L27/06 ,  H01L23/498 ,  H01L29/786 ,  H01L25/00 ,  H01L21/84 ,  H01L21/78 ,  H01L25/065 ,  H01L27/12 ,  H01L21/762 ,  H01L23/00 ,  H01L27/092

CPC分类号： H01L21/76251 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/76256 ,  H01L21/78 ,  H01L21/84 ,  H01L23/3677 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/78603 ,  H01L29/78606 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/11 ,  H01L2224/11003 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/131 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48666 ,  H01L2224/48684 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48766 ,  H01L2224/48784 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48866 ,  H01L2224/48884 ,  H01L2224/73257 ,  H01L2224/80006 ,  H01L2224/80048 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/831 ,  H01L2224/8382 ,  H01L2224/8385 ,  H01L2224/85205 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/9222 ,  H01L2224/92242 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/2064 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/80 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2224/1144 ,  H01L2924/00012 ,  H01L2224/83205 ,  H01L2224/45015 ,  H01L2924/207

摘要： An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface. A first active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the first active layer and formed on the second surface of the insulating layer. A substrate having a first surface and a second surface, with a second active layer formed in the first surface, is provided such that the first active layer is coupled to the second surface of the substrate.

摘要翻译： 集成电路组件包括具有第一表面和第二表面的绝缘层。 第一有源层接触绝缘层的第一表面。 金属接合焊盘与第一有源层电连接并形成在绝缘层的第二表面上。 提供具有第一表面和第二表面的衬底，其中形成在第一表面中的第二有源层使得第一有源层耦合到衬底的第二表面。

公开(公告)号：US07538434B2

公开(公告)日：2009-05-26

申请号：US11075072

申请日：2005-03-08

申请人： Chien-Hsueh Shih ,  Minghsing Tsai ,  Hung-Wen Su ,  Shau-Lin Shue

发明人： Chien-Hsueh Shih ,  Minghsing Tsai ,  Hung-Wen Su ,  Shau-Lin Shue

IPC分类号： H01L23/48

CPC分类号： H01L23/53238 ,  H01L24/05 ,  H01L2224/05083 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05676 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48757 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48781 ,  H01L2224/48784 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48857 ,  H01L2224/48864 ,  H01L2224/48869 ,  H01L2224/48881 ,  H01L2224/48884 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/00011

摘要： A conductive polymer between two metallic layers acts a glue layer, a barrier layer or an activation seed layer. The conductive polymer layer is employed to encapsulate a copper interconnection structure to prevent copper diffusion into any overlying layers and improve adhesive characteristics between the copper and any overlying layers.

摘要翻译： 两个金属层之间的导电聚合物起胶层，阻挡层或活化种子层的作用。 导电聚合物层用于封装铜互连结构以防止铜扩散到任何上覆层中并改善铜和任何上覆层之间的粘合特性。

公开(公告)号：US10079219B2

公开(公告)日：2018-09-18

申请号：US15523998

申请日：2015-10-12

申请人： DANFOSS SILICON POWER GMBH

发明人： Martin Becker ,  Ronald Eisele ,  Frank Osterwald ,  Jacek Rudzki

IPC分类号： H01L23/34 ,  H01L23/00

CPC分类号： H01L24/45 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/03334 ,  H01L2224/03505 ,  H01L2224/04042 ,  H01L2224/05017 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/0518 ,  H01L2224/05184 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/48491 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/4888 ,  H01L2224/48884 ,  H01L2224/8384 ,  H01L2224/85238 ,  H01L2224/85365 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00015 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/206 ,  H01L2224/43848

摘要： A power semiconductor contact structure for power semiconductor modules, which has at least one substrate 1 and a metal molded body 2 as an electrode, which are sintered one on top of the other by means of a substantially uninterrupted sintering layer 3a with regions of varying thickness. The metal molded body 2 takes the form here of a flexible contacting film 5 of such a thickness that this contacting film is sintered with its side 4 facing the sintering layer 3a onto the regions of varying thickness of the sintering layer substantially over the full surface area. A description is also given of a method for forming a power semiconductor contact structure in a power semiconductor module that has a substrate and a metal molded body. The forming of the power semiconductor contact structure is performed firstly by applying a layer of sintering material of locally varying thickness to either the metal molded body 2 or the substrate, followed by sintering together the contacting film 5 with the substrate 1 by using the properties of the layer of sintering material that are conducive to connection, the contacting film 5 being made to develop its distinct form to correspond to the varying thickness of the layer of sintering material 3a.

公开(公告)号：US09412644B2

公开(公告)日：2016-08-09

申请号：US14572580

申请日：2014-12-16

申请人： QUALCOMM SWITCH CORP.

发明人： Michael A. Stuber ,  Stuart B. Molin ,  Mark Drucker ,  Peter Fowler

IPC分类号： H01L21/30 ,  H01L21/762 ,  H01L21/84

CPC分类号： H01L21/76251 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/76256 ,  H01L21/78 ,  H01L21/84 ,  H01L23/3677 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/78603 ,  H01L29/78606 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/11 ,  H01L2224/11003 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/131 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48666 ,  H01L2224/48684 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48766 ,  H01L2224/48784 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48866 ,  H01L2224/48884 ,  H01L2224/73257 ,  H01L2224/80006 ,  H01L2224/80048 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/831 ,  H01L2224/8382 ,  H01L2224/8385 ,  H01L2224/85205 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/9222 ,  H01L2224/92242 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/2064 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/80 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2224/1144 ,  H01L2924/00012 ,  H01L2224/83205 ,  H01L2224/45015 ,  H01L2924/207

摘要： A first wafer is provided that includes an insulating layer, a first active layer, and a handle layer. The insulating layer has a first surface and a second surface. The first active layer contacts the first surface of the insulating layer. The handle layer contacts the second surface of the insulating layer. A second wafer is provided that includes a substrate and a second active layer. The substrate has a first surface and a second surface. The second active layer contacts the first surface of the substrate. The second wafer is bonded to the first wafer by physically connecting the first active layer to the second surface of the substrate. The handle layer is removed. A metal bond pad is formed on the second surface of the insulating layer. The metal bond pad is electrically connected to the first active layer.

摘要翻译： 提供了第一晶片，其包括绝缘层，第一有源层和手柄层。 绝缘层具有第一表面和第二表面。 第一有源层接触绝缘层的第一表面。 手柄层接触绝缘层的第二表面。 提供了第二晶片，其包括基板和第二有源层。 基板具有第一表面和第二表面。 第二有源层接触衬底的第一表面。 通过将第一有源层物理连接到衬底的第二表面，将第二晶片结合到第一晶片。 手柄层被去除。 在绝缘层的第二表面上形成金属焊盘。 金属接合焊盘电连接到第一有源层。

公开(公告)号：US09171819B2

公开(公告)日：2015-10-27

申请号：US14511158

申请日：2014-10-09

申请人： Samsung Electronics Co., Ltd.

发明人： Cheol-woo Lee ,  Ji-han Ko

IPC分类号： H01L23/52 ,  H01L23/00

CPC分类号： H01L24/32 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49575 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/06135 ,  H01L2224/27003 ,  H01L2224/27436 ,  H01L2224/29082 ,  H01L2224/29084 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/3201 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32053 ,  H01L2224/32056 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/32105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/45184 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4886 ,  H01L2224/48866 ,  H01L2224/48881 ,  H01L2224/48884 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/83856 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/92147 ,  H01L2224/92165 ,  H01L2224/92242 ,  H01L2224/92247 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/06 ,  H01L2924/10161 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10333 ,  H01L2924/10335 ,  H01L2924/13091 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/14511 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/35 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/066 ,  H01L2924/05442 ,  H01L2224/83

摘要： Provided is a semiconductor package that may prevent deformation of stacked semiconductor chips and minimize a semiconductor package size. The semiconductor package includes a package base substrate, a lower chip stacked on the package base substrate, an upper chip stacked on the lower chip, and a first die attach film (DAF) attached to a bottom surface of the upper chip to cover at least a portion of the lower chip. The first DAF may be a multi-layer film including a first attaching layer contacting the bottom surface of the upper chip and a second attaching layer attached to a bottom of the first attaching layer to cover at least a portion of a side surface of the lower chip.

摘要翻译： 提供了可以防止堆叠的半导体芯片的变形并使半导体封装尺寸最小化的半导体封装。 半导体封装包括封装基底基板，堆叠在封装基底基板上的下部芯片，堆叠在下部芯片上的上部芯片，以及附接到上部芯片的底表面上的至少覆盖的第一芯片附着膜（DAF） 下部芯片的一部分。 第一DAF可以是多层膜，其包括接触上芯片的底表面的第一附着层和附接到第一附着层的底部的第二附着层，以覆盖下层的侧表面的至少一部分 芯片。

公开(公告)号：US20140110838A1

公开(公告)日：2014-04-24

申请号：US13656777

申请日：2012-10-22

申请人： INFINEON TECHNOLOGIES AG

发明人： Michael Rogalli ,  Wolfgang Lehnert

IPC分类号： H01L23/48 ,  H01L23/498 ,  H01L21/768

CPC分类号： H01L24/85 ,  H01L21/76834 ,  H01L21/76885 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/02206 ,  H01L2224/0221 ,  H01L2224/02215 ,  H01L2224/0382 ,  H01L2224/0391 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05164 ,  H01L2224/05184 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05684 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/48884 ,  H01L2224/73265 ,  H01L2224/85007 ,  H01L2224/8501 ,  H01L2224/85238 ,  H01L2224/85375 ,  H01L2224/8591 ,  H01L2924/05042 ,  H01L2924/05432 ,  H01L2924/05442 ,  H01L2924/059 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.

摘要翻译： 各种实施例提供一种半导体器件，包括具有顶侧和至少一个侧壁的最终金属层; 以及钝化层，设置在所述最终金属层的顶侧和至少一个侧壁中的至少一个的至少一部分上; 其中所述钝化层具有基本均匀的厚度。

公开(公告)号：US20130043598A1

公开(公告)日：2013-02-21

申请号：US13212536

申请日：2011-08-18

申请人： Ying-Ju CHEN ,  Hsien-Wei CHEN ,  Tsung-Yuan YU ,  Shih-Wei LIANG

发明人： Ying-Ju CHEN ,  Hsien-Wei CHEN ,  Tsung-Yuan YU ,  Shih-Wei LIANG

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/291 ,  H01L23/3192 ,  H01L23/5226 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05008 ,  H01L2224/05096 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48666 ,  H01L2224/48681 ,  H01L2224/48684 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/48866 ,  H01L2224/48881 ,  H01L2224/48884 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

摘要： Mechanisms of forming a bond pad structure are provided. The bond pad has a recess region, which is formed by an opening in the passivation layer underneath the bond pad. An upper passivation layer covers at least the recess region of the bond pad to reduce trapping of patterning and/or etching residues in the recess region. As a result, the likelihood of bond pad corrosion is reduced.

摘要翻译： 提供了形成接合焊盘结构的机理。 接合焊盘具有凹陷区域，该凹陷区域由接合焊盘下方的钝化层中的开口形成。 上钝化层至少覆盖接合焊盘的凹陷区域，以减少凹陷区域中图案化和/或蚀刻残留物的捕获。 结果，焊盘腐蚀的可能性降低。