公开(公告)号：US10910511B2

公开(公告)日：2021-02-02

申请号：US16135679

申请日：2018-09-19

申请人： DISCO CORPORATION ,  OSAKA UNIVERSITY

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masayuki Imanishi ,  Hiroshi Morikazu ,  Shin Tabata ,  Takumi Shotokuji

IPC分类号： H01L33/18 ,  H01L33/00 ,  C30B25/02 ,  C30B19/02 ,  C30B33/06 ,  C30B29/40 ,  H01L33/32 ,  H01L33/02

摘要： There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.

公开(公告)号：US20190088816A1

公开(公告)日：2019-03-21

申请号：US16135679

申请日：2018-09-19

申请人： DISCO CORPORATION ,  OSAKA UNIVERSITY

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masayuki Imanishi ,  Hiroshi Morikazu ,  Shin Tabata ,  Takumi Shotokuji

IPC分类号： H01L33/00 ,  C30B29/40 ,  H01L33/32 ,  H01L33/18

摘要： There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.

公开(公告)号：US11654511B2

公开(公告)日：2023-05-23

申请号：US16906252

申请日：2020-06-19

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu

IPC分类号： B23K26/0622 ,  H01L33/00

CPC分类号： B23K26/0622 ,  H01L33/0093

摘要： A laser processing apparatus includes a chuck table for holding a workpiece, a laser beam applying unit for applying a pulsed laser beam to the workpiece held by the chuck table while positioning spots of the pulsed laser beam on the workpiece, thereby processing the workpiece with the pulsed laser beam, and a control unit for controlling operation of the laser beam applying unit. The laser beam applying unit includes a laser oscillator for oscillating pulsed laser to emit a pulsed laser beam, a decimator for decimating pulses of the pulsed laser beam to adjust a repetitive frequency thereof, a scanner for scanning the spots of the pulsed laser beam over the workpiece at predetermined intervals, and an fθ lens for focusing the pulsed laser beam.

公开(公告)号：US11597040B2

公开(公告)日：2023-03-07

申请号：US15919977

申请日：2018-03-13

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu ,  Noboru Takeda

IPC分类号： H01L21/683 ,  H01L21/268 ,  B23K26/53 ,  B23K26/0622 ,  B23K26/06 ,  B23K26/08 ,  H01L21/67 ,  H01L21/68 ,  B23K101/40 ,  H01L21/78

摘要： A laser beam irradiation unit of a laser processing apparatus includes: a laser oscillator in which a repetition frequency is set so as to oscillate a pulsed laser having a pulse width shorter than a time of electronic excitation caused by irradiating the workpiece with a laser beam and oscillate at least two pulsed lasers within the electronic excitation time; a condenser that irradiates the workpiece held on the chuck table with the pulsed laser beams oscillated by the laser oscillator; and a thinning-out unit that is disposed between the laser oscillator and the condenser and guides the pulsed laser beams necessary for processing to the condenser by thinning out and discarding pulsed laser beams in a predetermined cycle.

公开(公告)号：US11211296B2

公开(公告)日：2021-12-28

申请号：US16928450

申请日：2020-07-14

申请人： DISCO CORPORATION

发明人： Fumiya Kawano ,  Tasuku Koyanagi ,  Hiroshi Morikazu

IPC分类号： H01L21/268 ,  H01L21/66 ,  H01L21/67

摘要： A comparing method includes a processing trace forming step of positioning a condenser at a reference height and a plurality of heights by moving the condenser, and forming a plurality of processing traces in one surface of a workpiece by irradiating different positions of the one surface with a laser beam according to each of the heights, a calculating step of calculating at least one of an average of widths in a plurality of predetermined directions of each of the plurality of processing traces and an area ratio of each of the plurality of processing traces to a circle of a predetermined diameter by analyzing an image of the plurality of processing traces by an image analyzing section, and a comparing step of quantitatively comparing deviations of the plurality of processing traces from a predetermined shape on the basis of at least one of the average and the area ratio.

公开(公告)号：US10319593B2

公开(公告)日：2019-06-11

申请号：US15209292

申请日：2016-07-13

申请人： DISCO CORPORATION

发明人： Kazuya Hirata ,  Yoko Nishino ,  Hiroshi Morikazu ,  Karl Priewasser

IPC分类号： H01L21/04 ,  H01L29/16 ,  B23K26/53 ,  B28D5/00 ,  H01L21/268 ,  H01L21/304 ,  H01L21/683 ,  B23K26/00 ,  B23K26/03 ,  B23K26/08 ,  B23K26/70 ,  B23K26/0622 ,  B23K26/60 ,  H01L21/67 ,  B23K101/40 ,  B23K103/00

摘要： Disclosed herein is a wafer thinning method for thinning a wafer formed from an SiC substrate having a first surface and a second surface opposite to the first surface. The wafer thinning method includes an annular groove forming step of forming an annular groove on the second surface of the SiC substrate in an annular area corresponding to the boundary between a device area and a peripheral marginal area in the condition where a thickness corresponding to the finished thickness of the wafer after thinning is left, and a separation start point forming step of applying the laser beam to the second surface as relatively moving a focal point and the SiC substrate to thereby form a modified layer and cracks inside the SiC substrate at the predetermined depth.

公开(公告)号：US10207369B2

公开(公告)日：2019-02-19

申请号：US15080958

申请日：2016-03-25

申请人： DISCO CORPORATION

发明人： Keiji Nomaru ,  Hiroshi Morikazu

IPC分类号： B23K26/03 ,  B23K26/38 ,  B23K26/384 ,  B23K26/0622 ,  H01L21/768 ,  G01N21/71 ,  B23K26/40 ,  B23K26/382 ,  B23K103/16

摘要： A method for forming a laser processed hole in a workpiece configured by bonding a transparent first member formed of a first material and a second member formed of a second material. The method includes holding the workpiece by a chuck table with a side of the first member directed upward; applying a pulsed laser beam to the workpiece from the upward side of the first member; detecting a wavelength of plasma light generated by applying the pulsed laser beam to the workpiece; and controlling the laser beam according to a detection signal from the plasma light. The plasma is detected by: passing only the wavelength of plasma light generated from the first material, and detecting the plasma light generated from the first material and outputting a light intensity signal based on the detection. The processed hole extends entirely through the first member without melting the second member.

公开(公告)号：US10103061B2

公开(公告)日：2018-10-16

申请号：US15057428

申请日：2016-03-01

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu ,  Noboru Takeda ,  Takumi Shotokuji

IPC分类号： H01L21/78 ,  H01L21/67 ,  H01L21/268 ,  H01L21/683 ,  B23K26/00 ,  B23K26/40 ,  H01S5/02 ,  H01S5/323

摘要： Disclosed herein is a processing method of a single-crystal substrate having a film formed on a front side or a back side thereof to divide the single-crystal substrate along a plurality of preset division lines. The method includes a film removing step of removing the film along the division lines, a shield tunnel forming step of applying a pulsed laser beam having a wavelength which permeates through the single-crystal substrate along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, in the single-crystal substrate along the division lines, and dividing step of exerting an external force on the single-crystal substrate to which the shield tunnel forming step is performed to divide the single-crystal substrate along the division lines.

公开(公告)号：US09831128B2

公开(公告)日：2017-11-28

申请号：US15250017

申请日：2016-08-29

申请人： DISCO Corporation

发明人： Hiroshi Morikazu ,  Karl Heinz Priewasser ,  Nao Hattori

IPC分类号： H01L21/18 ,  H01L21/304 ,  H01L21/78 ,  H01L21/428 ,  H01L23/544 ,  H01L33/00 ,  H01S5/02

CPC分类号： H01L21/78 ,  H01L21/304 ,  H01L21/428 ,  H01L23/544 ,  H01L33/0054 ,  H01L33/0075 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/021

摘要： The invention relates to a method of processing a substrate, having a first surface with at least one division line formed thereon and a second surface opposite the first surface. The method comprises applying a pulsed laser beam to the substrate from the side of the first surface, at least in a plurality of positions along the at least one division line, so as to form a plurality of hole regions in the substrate, each hole region extending from the first surface towards the second surface. Each hole region is composed of a modified region and a space in the modified region open to the first surface. The method further comprises removing substrate material along the at least one division line where the plurality of hole regions has been formed.

公开(公告)号：US20170162420A1

公开(公告)日：2017-06-08

申请号：US15367558

申请日：2016-12-02

申请人： DISCO CORPORATION

发明人： Hiroshi Morikazu

IPC分类号： H01L21/683 ,  H01L21/304 ,  H01L21/78 ,  H01L23/544

CPC分类号： H01L21/6836 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386 ,  H01L2223/5446

摘要： A method of processing a wafer includes placing a supporting substrate in confronting relation to a face side of the wafer and integrally bonding the supporting substrate to the face side of the wafer with a bonding material, grinding a reverse side of the wafer to thin the wafer, cutting the wafer along division lines from the reverse side of the wafer into chips that carry individual devices thereon, placing a protective member on the reverse side of the wafer, applying a laser beam having a wavelength which is able to transmit the supporting substrate in the condition where a focused spot of the laser beam is set in the bonding material, thereby breaking the bonding material, and peeling the supporting substrate off from the devices to separate the chips that carry the individual devices thereon.