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27 条记录 (耗时 0.036 秒)

    Semiconductor package for selecting semiconductor chip from a chip stack
    2.
    发明授权
    Semiconductor package for selecting semiconductor chip from a chip stack 有权
    用于从芯片堆栈中选择半导体芯片的半导体封装

    公开(公告)号：US08624375B2

    公开(公告)日：2014-01-07

    申请号：US12981463

    申请日：2010-12-29

    申请人： Bok Gyu Min ,  Joon Ki Hong ,  Tae Hoon Kim ,  Da Un Nah ,  Jae Joon Ahn ,  Ki Bum Kim

    发明人： Bok Gyu Min ,  Joon Ki Hong ,  Tae Hoon Kim ,  Da Un Nah ,  Jae Joon Ahn ,  Ki Bum Kim

    IPC分类号： H01L23/52

    CPC分类号： H01L25/0657 ,  H01L2224/16 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/15311

    摘要： A semiconductor package includes: first, second, third and fourth semiconductor chips stacked while having the arrangement of chip selection vias; and a connection unit provided between a second semiconductor chip and a third semiconductor chip, and configured to mutually connect some of the chip selection vias of the second and third semiconductor chips and disconnect the others of the chip selection vias of the second and third semiconductor chips, wherein the first and second semiconductor chips and the third and fourth semiconductor chips are stacked in a flip chip type.

    摘要翻译： 半导体封装包括：第一，第二，第三和第四半导体芯片，同时具有芯片选择通孔的布置; 以及连接单元，设置在第二半导体芯片和第三半导体芯片之间，并且被配置为相互连接第二和第三半导体芯片的一些芯片选择通孔，并且断开第二和第三半导体芯片的芯片选择通孔中的其它芯片 ，其中第一和第二半导体芯片以及第三和第四半导体芯片以倒装芯片类型堆叠。

    Memory of multilevel quantum dot structure and method for fabricating the same
    5.
    发明授权
    Memory of multilevel quantum dot structure and method for fabricating the same 失效
    多层量子点结构的记忆及其制造方法

    公开(公告)号：US06333214B1

    公开(公告)日：2001-12-25

    申请号：US09334895

    申请日：1999-06-17

    申请人： Ki Bum Kim ,  Tae Sik Yoon ,  Jang Yeon Kwon

    发明人： Ki Bum Kim ,  Tae Sik Yoon ,  Jang Yeon Kwon

    IPC分类号： H01L21335

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  G11C11/56 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/7887 ,  H01L29/7888

    摘要： A semiconductor memory having a multilevel quantum dot structure is formed by alternatively disposing conductive layers and insulation layers, and processing these layers so that quantum dots are formed in the conductive layers. The writing and reading of data into the semiconductor memory are achieved by using the principle of Coulomb blockade and quantized voltage drops. The size and distribution of the quantum dots are controlled by agglomeration, selective oxidation, etc. in order to achieve the desired quantum dot layer structure so that the immigration of charges between a semiconductor channel and each quantum dot layer is different.

    摘要翻译： 通过交替地设置导电层和绝缘层来形成具有多层量子点结构的半导体存储器，并且处理这些层，使得在导电层中形成量子点。 通过使用库仑阻塞和量子化电压降的原理，实现对半导体存储器的数据写入和读取。 通过聚集，选择性氧化等来控制量子点的尺寸和分布，以实现期望的量子点层结构，使得半导体沟道和每个量子点层之间的电荷迁移不同。

    LIGHT EMITTING MODULE AND BACKLIGHT UNIT HAVING THE SAME
    7.
    发明申请
    LIGHT EMITTING MODULE AND BACKLIGHT UNIT HAVING THE SAME 有权
    发光模块和背光单元

    公开(公告)号：US20130051062A1

    公开(公告)日：2013-02-28

    申请号：US13372857

    申请日：2012-02-14

    申请人： Song Eun Lee ,  Bong Kul Min ,  Kyung Ho Shin ,  Ki Bum Kim

    发明人： Song Eun Lee ,  Bong Kul Min ,  Kyung Ho Shin ,  Ki Bum Kim

    IPC分类号： F21V8/00

    CPC分类号： H05K1/0209 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/1301 ,  H05K2201/066 ,  H05K2201/10106 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Provided are a light emitting module and a backlight unit. The light emitting module comprises a module board comprising a plurality of first and second pads and a plurality of protrusion holes, a heatsink plate corresponding to a second surface opposite to a first surface of the module board, the heatsink plate comprising a plurality of protrusions respectively inserted into the protrusion holes of the module board, and a plurality of light emitting devices, each comprising a heatsink frame connected to the protrusions of the heatsink plate which comprises a first frame part on which the plurality of protrusions are disposed and a second frame part folded from the first frame part and disposed under the module board.

    摘要翻译： 提供了发光模块和背光单元。 发光模块包括：模块板，包括多个第一和第二焊盘和多个突出孔，散热板对应于与模块板的第一表面相对的第二表面，散热板分别包括多个突起 插入到模块板的突出孔中的多个发光装置和多个发光装置，每个发光装置包括连接到散热板的突起的散热器框架，该散热器框架包括设置有多个突起的第一框架部分和第二框架部分 从第一框架部分折叠并设置在模块板下。

    Control method of an air conditioner indoor unit
    8.
    发明授权
    Control method of an air conditioner indoor unit 有权
    空调室内机的控制方法

    公开(公告)号：US07730730B2

    公开(公告)日：2010-06-08

    申请号：US11274337

    申请日：2005-11-16

    申请人： Do Yong Ha ,  Ho Jong Jeong ,  Ki Bum Kim ,  Jin Ha Choi ,  Jae Sik Kang

    发明人： Do Yong Ha ,  Ho Jong Jeong ,  Ki Bum Kim ,  Jin Ha Choi ,  Jae Sik Kang

    IPC分类号： F25B7/00 ,  F25D29/00 ,  F25D17/00

    CPC分类号： F25B13/00 ,  F25B2313/02331 ,  F25B2313/02334 ,  F25B2600/2513

    摘要： A control method of a multi-air conditioner in which a plurality of indoor units is connected to one outdoor unit and refrigerant flow amount is adjusted by electronic expansion valves comprises a share step in which a plurality of indoor units exchanges their operation information, a comparison and judgment step in which each above indoor unit compares and judges its operation status based on the exchanged operation information, and an adjustment step in which each above indoor unit adjusts refrigerant flow amount supplied to each indoor unit based on the compared and judged operation status.

    摘要翻译： 通过电子膨胀阀调节多个室内机连接到一个室外机和制冷剂流量的多空调机的控制方法包括：多个室内机组交换其运转信息，比较 以及判断步骤，其中每个上述室内单元基于所交换的操作信息来比较和判断其操作状态，以及调节步骤，其中每个上述室内单元基于所比较和判断的运行状态来调节提供给每个室内单元的制冷剂流量。

    Poly-silicon thin film transistor having back bias effects and fabrication method thereof
    9.
    发明授权
    Poly-silicon thin film transistor having back bias effects and fabrication method thereof 失效
    具有背偏置效应的多晶硅薄膜晶体管及其制造方法

    公开(公告)号：US06936504B2

    公开(公告)日：2005-08-30

    申请号：US10355009

    申请日：2003-01-31

    申请人： Seung Ki Joo ,  Ki Bum Kim ,  Yeo Geon Yoon

    发明人： Seung Ki Joo ,  Ki Bum Kim ,  Yeo Geon Yoon

    IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/84

    CPC分类号： H01L29/6675 ,  H01L29/78648

    摘要： A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried electrode pad formed of an conductive material on one side of the glass substrate where the back bias voltage is applied, a buffer layer formed of an insulation material on the whole surface of the glass substrate, and a poly-Si TFT formed on the upper portion of the buffer layer. A method of fabricating the TFT is also provided.

    摘要翻译： 提供具有背偏置效应的多晶硅（poly-Si）薄膜晶体管（TFT），以增强泄漏电流，亚阈值斜率和导通电流的特性。 多晶硅TFT包括玻璃基板，由玻璃基板一侧的导电材料形成的背面偏置电压的岛状掩埋电极焊盘，在绝缘材料的整个表面上形成的缓冲层 玻璃基板和形成在缓冲层的上部的多晶硅TFT。 还提供了制造TFT的方法。