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    TONER, DEVELOPING AGENT, TONER HOUSING UNIT, IMAGE FORMING APPARATUS, AND A METHOD OF FORMING IMAGES
    4.
    发明申请
    TONER, DEVELOPING AGENT, TONER HOUSING UNIT, IMAGE FORMING APPARATUS, AND A METHOD OF FORMING IMAGES 有权

    公开(公告)号：US20220326632A1

    公开(公告)日：2022-10-13

    申请号：US17657471

    申请日：2022-03-31

    申请人： Keiji MAKABE ,  Akira Tanaka ,  Hidekazu Kakinuma ,  Tsukiko Takahashi

    发明人： Keiji MAKABE ,  Akira Tanaka ,  Hidekazu Kakinuma ,  Tsukiko Takahashi

    IPC分类号： G03G9/097 ,  G03G15/08 ,  G03G9/08

    摘要： [Object] An object of the invention is to provide a toner that can both achieve a higher level of low temperature fixability and suppression of the toner scattering.
    [Means of Achieving the Object]
    The disclosure is to provide a toner, including base-particles, and an external-additive, wherein a glass-transition temperature obtained from a DSC-curve at a second-warming of a THF-insoluble component is −50° C. or higher and 10° C. or lower, wherein an average circularity of the toner is 0.975 or more and 0.985 or lower, wherein the toner satisfies the following formula: 1.5≤Bt−0.025−Ct≤3.0, wherein the Bt [m2/g] is a BET-specific-surface area of the toner-particles, and the Ct [%] is a coverage by the external-additive, and, at least a portion of a surface of the external-additive is coated with either an oxide of a metallic element, a hydroxide of the metallic element, or both.

    Semiconductor light emitting device
    6.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08686398B2

    公开(公告)日：2014-04-01

    申请号：US13599852

    申请日：2012-08-30

    申请人： Akira Tanaka ,  Yoko Motojima

    发明人： Akira Tanaka ,  Yoko Motojima

    IPC分类号： H01L29/06

    CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.

    摘要翻译： 半导体发光器件包括第一导电型第一半导体层，第二导电型第二半导体层，半导体发光层以及第一和第二电极。 半导体发光层设置在第一半导体层和第二半导体层之间，并且包括多量子阱结构。 量子阱结构包括交替层叠的阱层和势垒层，每个阱层不小于6nm且不大于10nm。 第一和第二电极电连接到第一和第二半导体层，使得电流在基本垂直于主表面的方向上流动。

    Communication sheet structure
    7.
    发明授权
    Communication sheet structure 有权
    通讯单结构

    公开(公告)号：US08570240B2

    公开(公告)日：2013-10-29

    申请号：US12996839

    申请日：2008-06-27

    申请人： Akira Tanaka ,  Machiko Oouchida ,  Hiroyuki Mori

    发明人： Akira Tanaka ,  Machiko Oouchida ,  Hiroyuki Mori

    IPC分类号： H01Q1/36

    CPC分类号： H04B13/00

    摘要： A communication sheet structure for transmitting electromagnetic waves, and thereby performing communication, is characterized in that the communication sheet structure includes a planar base material with a relative dielectric constant at a frequency of from 800 MHz to 10 GHz of from 1.0 to 15.0, and one side of the base material includes conductor A existing portion and non-existing portion, and the other side of the base material includes a conductor B existing over 90% or more thereof. The communication sheet structure enables communication in two dimensions, and the communication sheet structure is extremely excellent in communication performances.

    摘要翻译： 用于传送电磁波，从而进行通信的通信片结构的特征在于，通信片结构包括平面基底材料，其相对介电常数在800MHz至10GHz的频率范围为1.0至15.0，一个 基体材料的一侧包括导体A存在部分和不存在部分，并且基材的另一侧包括存在于其中90％以上的导体B. 通信片结构使得能够在二维方面进行通信，并且通信片结构在通信性能方面非常优异。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
    半导体发光器件

    公开(公告)号：US20130228742A1

    公开(公告)日：2013-09-05

    申请号：US13599852

    申请日：2012-08-30

    申请人： Akira Tanaka ,  Yoko Motojima

    发明人： Akira Tanaka ,  Yoko Motojima

    IPC分类号： H01L33/06

    CPC分类号： H01L33/06 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.

    摘要翻译： 半导体发光器件包括第一导电型第一半导体层，第二导电型第二半导体层，半导体发光层以及第一和第二电极。 半导体发光层设置在第一半导体层和第二半导体层之间，并且包括多量子阱结构。 量子阱结构包括交替层叠的阱层和势垒层，每个阱层不小于6nm且不大于10nm。 第一和第二电极电连接到第一和第二半导体层，使得电流在基本垂直于主表面的方向上流动。

    Light emitting device
    9.
    发明授权
    Light emitting device 失效
    发光装置

    公开(公告)号：US08410473B2

    公开(公告)日：2013-04-02

    申请号：US13291176

    申请日：2011-11-08

    申请人： Akira Tanaka

    发明人： Akira Tanaka

    IPC分类号： H01L29/06

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/32 ,  H01S5/309 ,  H01S5/34333

    摘要： A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer.

    摘要翻译： 发光器件包括：由第一导电类型的半导体制成的第一层; 由第二导电类型的半导体制成的第二层; 包括设置在第一层和第二层之间的多量子阱的有源层，多量子阱的每个势垒层中的第一导电类型的杂质浓度具有大致平坦的分布或朝着第二层增加，杂质的平均值 从多量子阱的各阱层观察的第二层侧的阻挡层的浓度等于或大于第一层侧的阻挡层中的杂质浓度的平均值，以及 最靠近第二层的阻挡层高于最靠近第一层的势垒层中的杂质浓度的平均值。