-
公开(公告)号：US20080070351A1
公开(公告)日：2008-03-20
申请号：US11857481
申请日：2007-09-19
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/1255 , H01L29/78645
摘要： In a display device manufacturing method including a step of forming a semiconductor film above a substrate and a step of implanting an impurity to each of a first semiconductor film in a first region of the substrate, a second semiconductor film in a second region outside the first region, and a third semiconductor film in a third region outside the first and second regions, the implanting step includes: a first step of forming a first resist above the substrate so as to be thicker in the first region than in the second region, the first resist covering the first and second regions and having an opening in the third region; a second step of implanting an impurity to only the third semiconductor in the third region using the first resist as a mask; a third step of thinning the first resist so as to form a second resist that covers the first region and has an opening in each of second and third regions; a fourth step of implanting an impurity to the second and third semiconductor films in the second and third regions simultaneously using the second resist as a mask; and a fifth step of implanting an impurity to the first to third semiconductor films in the first to third regions simultaneously.
摘要翻译： 在包括在衬底上形成半导体膜的步骤和在衬底的第一区域中向第一半导体膜中的每一个注入杂质的步骤的显示器件制造方法中，在第一区域之外的第二区域中的第二半导体膜 区域，以及在第一和第二区域外的第三区域中的第三半导体膜，所述注入步骤包括：第一步骤，在所述衬底上方形成第一抗蚀剂，使其在所述第一区域中比在所述第二区域中更厚， 第一抗蚀剂覆盖第一和第二区域并且在第三区域中具有开口; 使用第一抗蚀剂作为掩模将杂质注入第三区域中的第三半导体的第二步骤; 第三步骤，使第一抗蚀剂变薄以形成覆盖第一区域并在第二和第三区域中的每一个具有开口的第二抗蚀剂; 第四步骤，使用第二抗蚀剂作为掩模，将杂质注入第二和第三区域中的第二和第三半导体膜; 以及将第一至第三区域中的第一至第三半导体膜同时注入杂质的第五步骤。
-
公开(公告)号：US07704810B2
公开(公告)日：2010-04-27
申请号：US11857481
申请日：2007-09-19
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1255 , H01L29/78645
摘要： In a display device manufacturing method including a step of forming a semiconductor film above a substrate and a step of implanting an impurity to each of a first semiconductor film in a first region of the substrate, a second semiconductor film in a second region outside the first region, and a third semiconductor film in a third region outside the first and second regions, the implanting step includes implanting an impurity in the third region so as to form a capacitor.
摘要翻译： 在包括在衬底上形成半导体膜的步骤和在衬底的第一区域中向第一半导体膜中的每一个注入杂质的步骤的显示器件制造方法中，在第一区域之外的第二区域中的第二半导体膜 区域，以及在第一和第二区域外的第三区域中的第三半导体膜，所述注入步骤包括在第三区域中注入杂质以形成电容器。
-
公开(公告)号：US07535024B2
公开(公告)日：2009-05-19
申请号：US11600164
申请日：2006-11-16
IPC分类号： H01L29/04
CPC分类号： H01L29/78621 , H01L29/42384 , H01L29/4908 , H01L29/78696 , H01L2029/7863
摘要： The present invention provides a fabrication method of a display device which aims at the reduction of fabricating man-hours. In a fabrication method of a display device having a thin film transistor in which a gate electrode includes a first gate electrode and a second gate electrode which is overlapped to the first gate electrode and has a size thereof in the channel direction set smaller than the corresponding size of the first gate electrode, the semiconductor layer includes a channel region which is overlapped to the second gate electrode, a first impurity region which is overlapped to the first gate electrode and is formed outside the second gate electrode, a second impurity region which is formed outside the gate electrode, and a third conductive impurity region which is formed outside the gate electrode and the second impurity region, the first impurity region, the second impurity region and the third impurity region are respectively formed of the same conductive type, the impurity concentration of the first impurity region is lower than the impurity concentration of the third impurity region, and the impurity concentration of the second impurity region is lower than the impurity concentration of the first impurity region, impurities are collectively implanted into both of the first and second impurity regions such that the impurities are implanted into the first impurity region by way of the first gate electrode and the impurities are implanted into the second impurity region such that a peak position of the impurity concentration in the depth direction is positioned below the semiconductor layer thus lowering the impurity concentration of the second impurity region than the impurity concentration of the first impurity region.
摘要翻译： 本发明提供了一种旨在减少制造工时的显示装置的制造方法。 在具有薄膜晶体管的显示装置的制造方法中，其中栅电极包括第一栅极和与第一栅电极重叠并且具有小于相应的沟道方向的尺寸的第二栅电极 第一栅电极的尺寸，半导体层包括与第二栅电极重叠的沟道区，与第一栅电极重叠并形成在第二栅电极外的第一杂质区，第二杂质区， 形成在栅极电极外部的第三导电杂质区域和形成在栅电极和第二杂质区域外的第三导电杂质区域，第一杂质区域，第二杂质区域和第三杂质区域分别由相同的导电类型形成，杂质 第一杂质区域的浓度低于第三杂质区域的杂质浓度 第二杂质区域的杂质浓度低于第一杂质区域的杂质浓度，将杂质共同地注入到第一和第二杂质区域中，使得杂质通过第一栅电极注入第一杂质区域 并且将杂质注入到第二杂质区域中，使得深度方向上的杂质浓度的峰值位置位于半导体层的下方，从而降低第二杂质区域的杂质浓度比第一杂质区域的杂质浓度降低。
-
公开(公告)号：US20070108449A1
公开(公告)日：2007-05-17
申请号：US11600164
申请日：2006-11-16
CPC分类号： H01L29/78621 , H01L29/42384 , H01L29/4908 , H01L29/78696 , H01L2029/7863
摘要： The present invention provides a fabrication method of a display device which aims at the reduction of fabricating man-hours. In a fabrication method of a display device having a thin film transistor in which a gate electrode includes a first gate electrode and a second gate electrode which is overlapped to the first gate electrode and has a size thereof in the channel direction set smaller than the corresponding size of the first gate electrode, the semiconductor layer includes a channel region which is overlapped to the second gate electrode, a first impurity region which is overlapped to the first gate electrode and is formed outside the second gate electrode, a second impurity region which is formed outside the gate electrode, and a third conductive impurity region which is formed outside the gate electrode and the second impurity region, the first impurity region, the second impurity region and the third impurity region are respectively formed of the same conductive type, the impurity concentration of the first impurity region is lower than the impurity concentration of the third impurity region, and the impurity concentration of the second impurity region is lower than the impurity concentration of the first impurity region, impurities are collectively implanted into both of the first and second impurity regions such that the impurities are implanted into the first impurity region by way of the first gate electrode and the impurities are implanted into the second impurity region such that a peak position of the impurity concentration in the depth direction is positioned below the semiconductor layer thus lowering the impurity concentration of the second impurity region than the impurity concentration of the first impurity region.
摘要翻译： 本发明提供了一种旨在减少制造工时的显示装置的制造方法。 在具有薄膜晶体管的显示装置的制造方法中，其中栅电极包括第一栅极和与第一栅电极重叠并且具有小于相应的沟道方向的尺寸的第二栅电极 第一栅电极的尺寸，半导体层包括与第二栅电极重叠的沟道区，与第一栅电极重叠并形成在第二栅电极外的第一杂质区，第二杂质区， 形成在栅电极外部的第三导电杂质区域和形成在栅电极和第二杂质区域外的第三导电杂质区域，第一杂质区域，第二杂质区域和第三杂质区域分别由相同的导电型形成，杂质 第一杂质区域的浓度低于第三杂质区域的杂质浓度 第二杂质区域的杂质浓度低于第一杂质区域的杂质浓度，将杂质共同地注入到第一和第二杂质区域中，使得杂质通过第一栅电极注入第一杂质区域 并且将杂质注入到第二杂质区域中，使得深度方向上的杂质浓度的峰值位置位于半导体层的下方，从而降低第二杂质区域的杂质浓度比第一杂质区域的杂质浓度降低。
-
公开(公告)号：US20100096645A1
公开(公告)日：2010-04-22
申请号：US12579428
申请日：2009-10-15
申请人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
发明人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/1248
摘要： A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films.
摘要翻译： 提供了可以减少将绝缘基板放入CVD装置并从CVD装置中取出的次数的显示装置和显示装置的制造方法。 显示装置的制造方法包括在绝缘基板上形成包括第一电极膜和第二电极膜的导电层，第一绝缘层，半导体膜，第二绝缘层和保护层的步骤; 形成具有预定厚度的第一抗蚀剂膜，其布置在半导体膜上方的第一区域中，布置在第二电极膜上方的第二区域中的开口部分和布置在除了第一区域之外的区域中的具有大厚度的第二抗蚀剂膜 和保护层上的第二区域; 蚀刻第二区域下方的部分，通过灰化去除第一抗蚀剂膜; 形成在第一区域下方到达半导体膜的第一孔和在第二区域下方到达第二电极膜的第二孔; 去除第二抗蚀剂膜，以及形成连接到半导体膜的线和连接到第二电极膜的线。
-
公开(公告)号：US09164275B2
公开(公告)日：2015-10-20
申请号：US13486280
申请日：2012-06-01
IPC分类号： G02B26/00 , G09G5/00 , G09G5/10 , G02B26/02 , G02B26/04 , B81B7/02 , G09G3/34 , B32B3/00 , B81C1/00 , H02N1/00 , B81B3/00
CPC分类号： G02B26/02 , B32B3/00 , B81B3/0062 , B81B7/02 , B81B2201/047 , B81B2203/0307 , B81B2203/0376 , B81C1/00103 , G02B26/04 , G02F2203/12 , G09G3/34 , G09G5/10 , G09G2300/08 , H02N1/006
摘要： A display device includes: a plurality of pixels each having a shutter plate formed and an actuator portion, wherein the actuator portion has a beam portion connected to the shutter plate, a drive electrode causing the beam portion to bend to drive the shutter plate, a first supporting portion supporting the drive electrode and fixed on a substrate, and a second supporting portion supporting the beam portion and fixed on the substrate, at least one of the first supporting portion and the second supporting portion has a planar portion, and a recessed portion formed to be concaved from the planar portion and connected to the substrate, and the recessed portion has a vertically formed portion formed to be inclined substantially vertically from the planar portion, and a portion starting from the vertically formed portion and formed such that the inclination of the portion becomes gentle toward the substrate.
摘要翻译： 显示装置包括：多个像素，每个具有形成的快门板和致动器部分，其中致动器部分具有连接到快门板的光束部分，使光束部分弯曲以驱动快门板的驱动电极， 支撑驱动电极并固定在基板上的第一支撑部分和支撑梁部分并固定在基板上的第二支撑部分，第一支撑部分和第二支撑部分中的至少一个具有平坦部分，并且凹部 形成为从平面部分凹陷并连接到基板，并且凹部具有形成为从平面部分大致垂直地倾斜的垂直形成部分，以及从垂直形成部分开始的部分， 该部分对基板变得柔和。
-
公开(公告)号：US20120306830A1
公开(公告)日：2012-12-06
申请号：US13486280
申请日：2012-06-01
IPC分类号： G09G5/00
CPC分类号： G02B26/02 , B32B3/00 , B81B3/0062 , B81B7/02 , B81B2201/047 , B81B2203/0307 , B81B2203/0376 , B81C1/00103 , G02B26/04 , G02F2203/12 , G09G3/34 , G09G5/10 , G09G2300/08 , H02N1/006
摘要： A display device includes: a plurality of pixels each having a shutter plate formed and an actuator portion, wherein the actuator portion has a beam portion connected to the shutter plate, a drive electrode causing the beam portion to bend to drive the shutter plate, a first supporting portion supporting the drive electrode and fixed on a substrate, and a second supporting portion supporting the beam portion and fixed on the substrate, at least one of the first supporting portion and the second supporting portion has a planar portion, and a recessed portion formed to be concaved from the planar portion and connected to the substrate, and the recessed portion has a vertically formed portion formed to be inclined substantially vertically from the planar portion, and a portion starting from the vertically formed portion and formed such that the inclination of the portion becomes gentle toward the substrate.
摘要翻译： 显示装置包括：多个像素，每个具有形成的快门板和致动器部分，其中致动器部分具有连接到快门板的光束部分，使光束部分弯曲以驱动快门板的驱动电极; 支撑驱动电极并固定在基板上的第一支撑部分和支撑梁部分并固定在基板上的第二支撑部分，第一支撑部分和第二支撑部分中的至少一个具有平坦部分，并且凹部 形成为从平面部分凹陷并连接到基板，并且凹部具有形成为从平面部分大致垂直地倾斜的垂直形成部分，以及从垂直形成部分开始的部分， 该部分对基板变得柔和。
-
公开(公告)号：US20090218574A1
公开(公告)日：2009-09-03
申请号：US12379095
申请日：2009-02-12
IPC分类号： H01L33/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers.
摘要翻译： 显示装置包括在基板上方的薄膜晶体管，其中薄膜晶体管被配置为包括栅极电极，形成为覆盖栅电极的栅极绝缘膜，形成为跨越栅极上的栅极电极的半导体层 绝缘膜，形成为覆盖半导体层的层间绝缘膜，以及一对电极，其形成为通过穿过该层间绝缘膜形成的接触孔而将半导体层的每一侧连接在其间的栅电极， 在半导体层的电极的每个连接部分处形成高浓度杂质层，并且形成环状低浓度杂质层以包围至少一个高浓度杂质层。
-
公开(公告)号：US09128286B2
公开(公告)日：2015-09-08
申请号：US13429470
申请日：2012-03-26
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译： 金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。 因此，使孔板的前表面和后表面具有不同的反射率。 在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。
-
公开(公告)号：US20120287494A1
公开(公告)日：2012-11-15
申请号：US13429470
申请日：2012-03-26
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译： 金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。 因此，使孔板的前表面和后表面具有不同的反射率。 在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。
-
-
-
-
-
-
-
-
-
搜索结果
47 条记录 (耗时 0.024 秒)
