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    Semiconductor component having at least one organic semiconductor layer and method for fabricating the same
    1.
    发明授权
    Semiconductor component having at least one organic semiconductor layer and method for fabricating the same 有权
    具有至少一个有机半导体层的半导体部件及其制造方法

    公开(公告)号：US07303940B2

    公开(公告)日：2007-12-04

    申请号：US11066732

    申请日：2005-02-25

    申请人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang

    发明人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang

    IPC分类号： H01L51/40 ,  H01L21/4763 ,  H01L51/00 ,  H01L23/58

    CPC分类号： H01L51/107 ,  H01L51/0545

    摘要： A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.

    摘要翻译： 半导体部件具有至少一个有机半导体层。 该组件还包括至少一个保护层，用于至少部分地覆盖至少一个有机半导体层以防止环境影响。 至少一个保护层含有一定比例的具有C n H 2n + 1 N的烷烃，n大于或等于15，或完全由这种烷烃组成 ，或这种类型的烷烃的混合物。 在一个实例中，保护层是石蜡。 这产生了很高的耐湿性。

    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same
    3.
    发明授权
    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same 有权
    具有由有机材料制成的栅极电介质的薄膜场效应晶体管及其制造方法

    公开(公告)号：US07326957B2

    公开(公告)日：2008-02-05

    申请号：US11134512

    申请日：2005-05-23

    申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Günter Schmid

    发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Günter Schmid

    IPC分类号： H01L29/08

    CPC分类号： H01L29/4908 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0545

    摘要： The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

    摘要翻译： 薄膜场效应晶体管的栅介质层形成为具有至少一个自组装分子单层（SAM）和由绝缘聚合物制成的电介质聚合物层的多层系统。 具有10至50纳米的相对较小的层厚度，多层栅极介质层确保低泄漏电流，并且能够在低于5伏特的低电源电压下实现薄膜场效应晶体管的故障安全操作。 栅极电介质层对于高达约20伏特的电压是鲁棒的，并且允许使用多种不同的材料来实现底层电极。

    Semiconductor component having at least one organic semiconductor layer and method for fabricating the same
    4.
    发明申请
    Semiconductor component having at least one organic semiconductor layer and method for fabricating the same 有权
    具有至少一个有机半导体层的半导体部件及其制造方法

    公开(公告)号：US20050196972A1

    公开(公告)日：2005-09-08

    申请号：US11066732

    申请日：2005-02-25

    申请人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid ,  Ute Zschieschang

    发明人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid ,  Ute Zschieschang

    IPC分类号： C23C16/00 ,  H01L21/31 ,  H01L51/30

    CPC分类号： H01L51/107 ,  H01L51/0545

    摘要： A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.

    摘要翻译： 半导体部件具有至少一个有机半导体层。 该组件还包括至少一个保护层，用于至少部分地覆盖至少一个有机半导体层以防止环境影响。 至少一个保护层含有一定比例的具有C n H 2n + 1 N的烷烃，n大于或等于15，或完全由这种烷烃组成 ，或这种类型的烷烃的混合物。 在一个实例中，保护层是石蜡。 这产生了很高的耐湿性。

    SENSOR HAVING ORGANIC FIELD EFFECT TRANSISTORS
    6.
    发明申请
    SENSOR HAVING ORGANIC FIELD EFFECT TRANSISTORS 审中-公开
    传感器有机场效应晶体管

    公开(公告)号：US20090066345A1

    公开(公告)日：2009-03-12

    申请号：US10599470

    申请日：2005-03-30

    申请人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Grzegorz Darlinski ,  Rainer Waser ,  Ralf Brederlow

    发明人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Grzegorz Darlinski ,  Rainer Waser ,  Ralf Brederlow

    IPC分类号： G01R27/26 ,  H01L51/05

    CPC分类号： G06K9/00053

    摘要： A force sensor based on an organic field effect transistor applied on a substrate is disclosed. In one embodiment, a mechanical force acting on the transistor causes a change in its source-drain voltage or its source-drain current which corresponds to said force and which can in each case be detected as measurement quantity for the acting force, a diaphragm-based pressure sensor that uses a force sensor of this type, a one- or two-dimensional position sensor that uses a multiplicity of force sensors of this type, and a fingerprint sensor that uses a multiplicity of such force sensors.

    摘要翻译： 公开了一种基于施加在衬底上的有机场效应晶体管的力传感器。 在一个实施例中，作用在晶体管上的机械力引起其源极 - 漏极电压或其源极 - 漏极电流的变化，其对应于所述力，并且在每种情况下都可以被检测为作用力的测量量， 使用这种力传感器的基于压力的传感器，使用这种类型的多个力传感器的一维或二维位置传感器，以及使用多个这样的力传感器的指纹传感器。