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    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same
    1.
    发明授权
    Thin film field effect transistor with gate dielectric made of organic material and method for fabricating the same 有权
    具有由有机材料制成的栅极电介质的薄膜场效应晶体管及其制造方法

    公开(公告)号：US07326957B2

    公开(公告)日：2008-02-05

    申请号：US11134512

    申请日：2005-05-23

    申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Günter Schmid

    发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Günter Schmid

    IPC分类号： H01L29/08

    CPC分类号： H01L29/4908 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0545

    摘要： The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

    摘要翻译： 薄膜场效应晶体管的栅介质层形成为具有至少一个自组装分子单层（SAM）和由绝缘聚合物制成的电介质聚合物层的多层系统。 具有10至50纳米的相对较小的层厚度，多层栅极介质层确保低泄漏电流，并且能够在低于5伏特的低电源电压下实现薄膜场效应晶体管的故障安全操作。 栅极电介质层对于高达约20伏特的电压是鲁棒的，并且允许使用多种不同的材料来实现底层电极。

    Semiconductor component having at least one organic semiconductor layer and method for fabricating the same
    2.
    发明授权
    Semiconductor component having at least one organic semiconductor layer and method for fabricating the same 有权
    具有至少一个有机半导体层的半导体部件及其制造方法

    公开(公告)号：US07303940B2

    公开(公告)日：2007-12-04

    申请号：US11066732

    申请日：2005-02-25

    申请人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang

    发明人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang

    IPC分类号： H01L51/40 ,  H01L21/4763 ,  H01L51/00 ,  H01L23/58

    CPC分类号： H01L51/107 ,  H01L51/0545

    摘要： A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.

    摘要翻译： 半导体部件具有至少一个有机半导体层。 该组件还包括至少一个保护层，用于至少部分地覆盖至少一个有机半导体层以防止环境影响。 至少一个保护层含有一定比例的具有C n H 2n + 1 N的烷烃，n大于或等于15，或完全由这种烷烃组成 ，或这种类型的烷烃的混合物。 在一个实例中，保护层是石蜡。 这产生了很高的耐湿性。

    Surface-functionalized inorganic semiconductor particles as electrical semiconductors for microelectronics applications
    4.
    发明授权
    Surface-functionalized inorganic semiconductor particles as electrical semiconductors for microelectronics applications 失效
    表面官能化的无机半导体颗粒作为用于微电子应用的电子半导体

    公开(公告)号：US06867442B2

    公开(公告)日：2005-03-15

    申请号：US10425460

    申请日：2003-04-29

    申请人： Marcus Halik ,  Günter Schmid ,  Katja Steffen ,  Hagen Klauk

    发明人： Marcus Halik ,  Günter Schmid ,  Katja Steffen ,  Hagen Klauk

    IPC分类号： H01L29/12 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L23/58

    CPC分类号： H01L29/12 ,  H01L51/0004 ,  H01L51/0094

    摘要： A semiconductor device has a first contact, by which charge carriers are injected into a semiconductor path, and a second contact, by which the charge carriers are extracted from the semiconductor path. The semiconductor path is formed by surface-modified semiconductor particles that bear alkyl or aryl ligands at their surface. The modification with ligands enables the semiconductor particles to form a stable dispersion that can easily be applied to a substrate with a printing technique. Consequently, the semiconductor device according to the invention can be produced very easily and inexpensively.

    摘要翻译： 半导体器件具有将电荷载流子注入到半导体路径中的第一接触和通过其从半导体路径中提取电荷载流子的第二接触。 半导体路径由在其表面上具有烷基或芳基配体的表面改性的半导体颗粒形成。 用配体的改性使得半导体颗粒能够形成稳定的分散体，其可以通过印刷技术容易地施加到基材上。 因此，根据本发明的半导体器件可以非常容易且廉价地制造。

    Silicon particles as additives for improving charge carrier mobility in organic semiconductors
    8.
    发明授权
    Silicon particles as additives for improving charge carrier mobility in organic semiconductors 失效
    硅颗粒作为添加剂，用于改善有机半导体中的载流子迁移率

    公开(公告)号：US07057206B2

    公开(公告)日：2006-06-06

    申请号：US10974774

    申请日：2004-10-28

    申请人： Marcus Halik ,  Günter Schmid ,  Hagen Klauk

    发明人： Marcus Halik ,  Günter Schmid ,  Hagen Klauk

    IPC分类号： H01L29/08

    CPC分类号： H01L51/0036 ,  H01L51/005 ,  H01L51/0094 ,  H01L51/0545 ,  H01L51/0566

    摘要： The invention relates to a semiconductor device having a semiconductor path made from an organic semiconductor material. Semiconductor particles or semiconductor clusters are distributed randomly in the organic semiconductor material. The semiconductor particles and/or semiconductor clusters can also be linked by linker molecules. The addition of semiconductor particles to the organic semiconductor material makes it possible to improve the electrical properties, for example, of a field-effect transistor has a semiconductor path of this nature.

    摘要翻译： 本发明涉及具有由有机半导体材料制成的半导体路径的半导体器件。 半导体颗粒或半导体簇随机分布在有机半导体材料中。 半导体颗粒和/或半导体簇也可以通过连接分子连接。 将半导体颗粒添加到有机半导体材料中可以提高电性能，例如场效应晶体管具有这种性质的半导体路径。

    Semiconductor memory cell and semiconductor memory device
    9.
    发明授权
    Semiconductor memory cell and semiconductor memory device 失效
    半导体存储单元和半导体存储器件

    公开(公告)号：US06787832B2

    公开(公告)日：2004-09-07

    申请号：US10395457

    申请日：2003-03-24

    申请人： Günter Schmid ,  Marcus Halik ,  Hagen Klauk ,  Christine Dehm ,  Thomas Haneder ,  Thomas Mikolajick

    发明人： Günter Schmid ,  Marcus Halik ,  Hagen Klauk ,  Christine Dehm ,  Thomas Haneder ,  Thomas Mikolajick

    IPC分类号： H01L2976

    CPC分类号： B82Y10/00 ,  H01L21/28291 ,  H01L27/1159 ,  H01L29/6684

    摘要： A semiconductor memory cell has a field-effect transistor device and a ferroelectric storage capacitor. The field-effect transistor device has a channel region that includes or is made of an organic semiconductor material. Besides a first gate electrode of the gate electrode configuration of the field-effect transistor device, an additional selection gate electrode is provided, by way of which the field-effect transistor device can be switched off without influencing the storage dielectric and independently of the first gate electrode.

    摘要翻译： 半导体存储单元具有场效晶体管器件和铁电存储电容器。 场效应晶体管器件具有包含或由有机半导体材料制成的沟道区。 除了场效应晶体管器件的栅电极结构的第一栅电极之外，还提供附加的选择栅电极，通过该栅电极可以切断场效晶体管器件而不影响存储电介质，并且独立于第一栅电极 栅电极。